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1. 发明申请

US20090046757A1 Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device 审中-公开
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20090046757A1
公开(公告)日：2009-02-19
申请号：US12222258
申请日：2008-08-06
申请人： Hidekazu Miyairi , Junpei Momo , Fumito Isaka
发明人： Hidekazu Miyairi , Junpei Momo , Fumito Isaka
IPC分类号： H01S3/108 , G21G5/00
CPC分类号： G03F7/70383 , H01L21/02672 , H01L21/02678
摘要： An object is to provide a laser irradiation apparatus and a laser irradiation method with which positions of crystal grain boundaries generated at the time of laser crystallization can be controlled. Laser light emitted from a laser 101 is modulated into laser light having intensity distribution along a long-axis direction through a phase shift mask 103 and is transferred to an amorphous semiconductor film provided over an insulating substrate by a cylindrical lens 104 and a lens 105. The amorphous semiconductor film is crystallized by being scanned with the laser light.
摘要翻译：目的在于提供一种能够控制激光结晶时产生的晶界的位置的激光照射装置和激光照射方法。从激光器101发射的激光通过相移掩模103被调制成具有沿长轴方向的强度分布的激光，并且通过柱面透镜104和透镜105被转印到设置在绝缘基板上的非晶半导体膜。通过用激光扫描使非晶半导体膜结晶化。

2. 发明授权

US08481393B2 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：半导体基板及其制造方法以及半导体装置的制造方法
公开(公告)号：US08481393B2
公开(公告)日：2013-07-09
申请号：US12844224
申请日：2010-07-27
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

3. 发明授权

US08772128B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08772128B2
公开(公告)日：2014-07-08
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
发明人： Shunpei Yamazaki , Junpei Momo , Fumito Isaka , Eiji Higa , Masaki Koyama , Akihisa Shimomura
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

4. 发明授权

US08313975B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08313975B2
公开(公告)日：2012-11-20
申请号：US13222423
申请日：2011-08-31
申请人： Fumito Isaka , Sho Kato , Junpei Momo
发明人： Fumito Isaka , Sho Kato , Junpei Momo
IPC分类号： H01L21/30 , H01L21/301
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1892 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
摘要翻译：目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。以下列方式获得单晶硅层：在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

5. 发明授权

US07851318B2 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：半导体基板及其制造方法以及半导体装置的制造方法
公开(公告)号：US07851318B2
公开(公告)日：2010-12-14
申请号：US12285924
申请日：2008-10-16
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。之后的单晶半导体衬底和支撑衬底键合到彼此中，半导体衬底被加热，从而使单晶半导体衬底夹持在损伤区域分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。所述单晶半导体层是通过激光束的照射，由此，单晶半导体层被重结晶，回收其结晶度和平坦化，以使单晶半导体层的表面熔化。在激光束照射后，将单晶半导体层在在该单晶半导体层不熔融的温度下加热，从而使单晶半导体层的寿命得以提高。

6. 发明申请

US20090117692A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090117692A1
公开(公告)日：2009-05-07
申请号：US12261832
申请日：2008-10-30
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo , Shunpei Yamazaki
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/32115 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1274 , H01L29/66772 , H01L29/78603
摘要： A single crystal semiconductor substrate bonded over a supporting substrate with a buffer layer interposed therebetween and having a separation layer is heated to separate the single crystal semiconductor substrate using the separation layer or a region near the separation layer as a separation plane, thereby forming a single crystal semiconductor layer over the supporting substrate. The single crystal semiconductor layer is irradiated with a laser beam to re-single-crystallize the single crystal semiconductor layer through melting. An impurity element is selectively added into the single crystal semiconductor layer to form a pair of impurity regions and a channel formation region between the pair of impurity regions. The single crystal semiconductor layer is heated at temperature which is equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate and which does not cause melting of the single crystal semiconductor layer.
摘要翻译：加热粘合在支撑基板上的缓冲层之间并具有分离层的单晶半导体基板，使用分离层或分离层附近的区域作为分离平面分离单晶半导体基板，从而形成单个半导体基板晶体半导体层在支撑衬底上。用激光束照射单晶半导体层，通过熔融使单晶半导体层重新单晶化。在单晶半导体层中选择性地添加杂质元素，以在一对杂质区之间形成一对杂质区和沟道形成区。单晶半导体层在等于或高于400℃并等于或低于支撑衬底的应变点的温度下被加热，并且不会引起单晶半导体层的熔化。

7. 发明申请

US20090117716A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：制造半导体器件的方法和半导体器件和电子器件
公开(公告)号：US20090117716A1
公开(公告)日：2009-05-07
申请号：US12259241
申请日：2008-10-27
申请人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
发明人： Akihisa SHIMOMURA , Junpei Momo , Fumito Isaka
IPC分类号： H01L21/62
CPC分类号： H01L21/76254
摘要： To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.
摘要翻译：为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底，以提供不执行机械抛光的高性能半导体器件，并且提供使用该半导体器件的电子器件通过激光束照射改善了半导体层的平坦度，减小了半导体层的缺陷。因此，可以提供高性能半导体器件而不进行机械抛光。此外，使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。具体地，代替在激光束的边缘部分照射的区域中的半导体层，将被照射到除了边缘部分之外的部分激光束的区域中的半导体层用作半导体元件。因此，可以大大提高半导体器件的性能。此外，可以提供优良的电子装置。

8. 发明授权

US08435871B2 Method for manufacturing semiconductor device, and semiconductor device and electronic device 有权
标题翻译：半导体装置的制造方法以及半导体装置及电子装置
公开(公告)号：US08435871B2
公开(公告)日：2013-05-07
申请号：US12259241
申请日：2008-10-27
申请人： Akihisa Shimomura , Junpei Momo , Fumito Isaka
发明人： Akihisa Shimomura , Junpei Momo , Fumito Isaka
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/76254
摘要： To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor device without performing mechanical polishing, and to provide an electronic device using the semiconductor device, planarity of a semiconductor layer is improved and defects in the semiconductor layer are reduced by laser beam irradiation. Accordingly, a high-performance semiconductor device can be provided without performing mechanical polishing. In addition, a semiconductor device is manufactured using a region having the most excellent characteristics in a region irradiated with the laser beam. Specifically, instead of the semiconductor layer in a region which is irradiated with the edge portion of the laser beam, the semiconductor layer in a region which is irradiated with portions of the laser beam except the edge portion is used as a semiconductor element. Accordingly, performance of the semiconductor device can be greatly improved. Moreover, an excellent electronic device can be provided.
摘要翻译：为了提供使用其中使用耐热性低的衬底的SOI衬底的高性能半导体器件用作基底衬底，以提供不执行机械抛光的高性能半导体器件，并且提供使用该半导体器件的电子器件通过激光束照射改善了半导体层的平坦度，减小了半导体层的缺陷。因此，可以提供高性能半导体器件而不进行机械抛光。此外，使用在激光束照射的区域中具有最优异特性的区域来制造半导体器件。具体地，代替在激光束的边缘部分照射的区域中的半导体层，将被照射到除边缘部分之外的激光束的部分的区域中的半导体层用作半导体元件。因此，可以大大提高半导体器件的性能。此外，可以提供优良的电子装置。

9. 发明授权

US08017429B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08017429B2
公开(公告)日：2011-09-13
申请号：US12369760
申请日：2009-02-12
申请人： Fumito Isaka , Sho Kato , Junpei Momo
发明人： Fumito Isaka , Sho Kato , Junpei Momo
IPC分类号： H01L21/30 , H01L21/301
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1892 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
摘要翻译：目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。以下列方式获得单晶硅层：在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

10. 发明申请

US20090115029A1 Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：半导体基板及其制造方法以及半导体装置的制造方法
公开(公告)号：US20090115029A1
公开(公告)日：2009-05-07
申请号：US12285924
申请日：2008-10-16
申请人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
发明人： Masaki Koyama , Fumito Isaka , Akihisa Shimomura , Junpei Momo
IPC分类号： H01L23/58 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。在激光束照射之后，单晶半导体层在单晶半导体层未熔融的温度下被加热，使得单晶半导体层的寿命得到改善

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