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1. 发明申请

US20110014780A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110014780A1
公开(公告)日：2011-01-20
申请号：US12887597
申请日：2010-09-22
申请人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Yasuhiro JINBO
发明人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Yasuhiro JINBO
IPC分类号： H01L21/268
CPC分类号： H01L21/02678 , B23K26/0732 , B23K26/0738 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L27/1218 , H01L27/1285
摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μM, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.
摘要翻译：在玻璃基板上形成包含半导体膜的层，并加热。玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束具有小于或等于100μm的宽度，宽度与长度之比为1:500或更大，以及激光束轮廓的半宽度小于或等于50μM，使得结晶形成半导体膜。作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。

2. 发明申请

US20120007078A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120007078A1
公开(公告)日：2012-01-12
申请号：US13239853
申请日：2011-09-22
申请人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Fumito ISAKA , Yasuhiro JINBO , Junya MARUYAMA
发明人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Fumito ISAKA , Yasuhiro JINBO , Junya MARUYAMA
IPC分类号： H01L27/12
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1266 , H01L27/1285 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.
摘要翻译：本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。首先，在基板上形成包含半导体膜的层，并加热。基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来，用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

3. 发明申请

US20110312165A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110312165A1
公开(公告)日：2011-12-22
申请号：US13222076
申请日：2011-08-31
申请人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Yasuhiro JINBO
发明人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Yasuhiro JINBO
IPC分类号： H01L21/20
CPC分类号： H01L21/02678 , B23K26/0732 , B23K26/0738 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L27/1218 , H01L27/1285
摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.
摘要翻译：在玻璃基板上形成包含半导体膜的层，并加热。玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束具有小于或等于100μm的宽度，宽度与长度的比为1:500或更大，激光束轮廓的全宽度小于或等于50μm，使得结晶形成半导体膜。作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。

4. 发明申请

US20100029068A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20100029068A1
公开(公告)日：2010-02-04
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L21/311 , H01L21/20
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

5. 发明申请

US20110076837A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20110076837A1
公开(公告)日：2011-03-31
申请号：US12891271
申请日：2010-09-27
申请人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
发明人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
IPC分类号： H01L21/30
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

6. 发明申请

US20100267216A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100267216A1
公开(公告)日：2010-10-21
申请号：US12824775
申请日：2010-06-28
申请人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
发明人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

7. 发明申请

US20080217563A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体器件和半导体制造设备的制造方法
公开(公告)号：US20080217563A1
公开(公告)日：2008-09-11
申请号：US12040934
申请日：2008-03-03
申请人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
发明人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
IPC分类号： H01L21/20 , H01L21/67
CPC分类号： H01L27/1266 , B23K26/0884 , B23K2101/006 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/67017 , H01L21/67225 , H01L27/1255 , H01L27/1285
摘要： The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.
摘要翻译：本发明是一种半导体制造装置，通过该半导体制造装置可以以低和稳定的浓度将杂质引入有源层，以形成阈值电压变化小的半导体元件。在包括洗涤单元的半导体制造装置中，用于将杂质附着到半导体膜的表面的杂质引入单元; 用于使已经附着有杂质的半导体膜结晶的激光结晶单元; 并且传送机器人时，通过在杂质导入单元中的衬底的曝光时间长度来控制附着到半导体膜的杂质的量，并且半导体膜在含有低浓度杂质的结晶半导体膜时结晶通过激光结晶同时形成。

8. 发明申请

US20110318908A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体器件和半导体制造设备的制造方法
公开(公告)号：US20110318908A1
公开(公告)日：2011-12-29
申请号：US13227146
申请日：2011-09-07
申请人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
发明人： Sho KATO , Hidekazu MIYAIRI , Akihisa SHIMOMURA
IPC分类号： H01L21/268
CPC分类号： H01L27/1266 , B23K26/0884 , B23K2101/006 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/67017 , H01L21/67225 , H01L27/1255 , H01L27/1285
摘要： The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.
摘要翻译：本发明是一种半导体制造装置，通过该半导体制造装置可以以低和稳定的浓度将杂质引入有源层，以形成阈值电压变化小的半导体元件。在包括洗涤单元的半导体制造装置中，用于将杂质附着到半导体膜的表面的杂质引入单元; 用于使已经附着有杂质的半导体膜结晶的激光结晶单元; 并且传送机器人时，通过在杂质导入单元中的衬底的曝光时间长度来控制附着到半导体膜的杂质的量，并且半导体膜在含有低浓度杂质的结晶半导体膜时结晶通过激光结晶同时形成。

9. 发明申请

US20110300690A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110300690A1
公开(公告)日：2011-12-08
申请号：US13187754
申请日：2011-07-21
申请人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
发明人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

10. 发明申请

US20090004821A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20090004821A1
公开(公告)日：2009-01-01
申请号：US12141551
申请日：2008-06-18
申请人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Yurika SATO
发明人： Akihisa SHIMOMURA , Hidekazu MIYAIRI , Yurika SATO
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： An effect of metal contamination caused in manufacturing an SOI substrate can is suppressed. A damaged region is formed by irradiating a semiconductor substrate with hydrogen ions, and then, a base substrate and the semiconductor substrate are bonded to each other. Heat treatment is performed thereon to cleave the semiconductor substrate, so that an SOI substrate is manufactured. A gettering site layer is formed of a semiconductor containing a Group 18 element such as Ar, over a semiconductor layer of the SOI substrate. Heat treatment is performed thereon to perform gettering of a metal element in the semiconductor layer with the gettering site layer. By removing the gettering site layer by etching, thinning of the semiconductor layer can be performed.
摘要翻译：抑制了制造SOI衬底的金属污染的影响。通过用半导体衬底照射氢离子形成损伤区域，然后将基底衬底和半导体衬底相互结合。对其进行热处理以切割半导体衬底，从而制造SOI衬底。吸收位置层由在SOI衬底的半导体层上含有诸如Ar的第18族元素的半导体形成。在其上进行热处理以利用吸杂位点层进行半导体层中的金属元素的吸杂。通过蚀刻去除吸杂位点层，可以进行半导体层的薄化。

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