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1. 发明申请

US20070034304A1 Precision gear, its gear mechanism, and production method of precision gear 审中-公开
标题翻译：精密齿轮，齿轮机构，精密齿轮的生产方法
公开(公告)号：US20070034304A1
公开(公告)日：2007-02-15
申请号：US10570118
申请日：2004-09-01
申请人： Akihisa Inoue , Yukiharu Shimizu , Kazuhiko Kita , Daichi Watanabe , Mamoru Ishida , Hideki Takeda , Yasunori Saotome
发明人： Akihisa Inoue , Yukiharu Shimizu , Kazuhiko Kita , Daichi Watanabe , Mamoru Ishida , Hideki Takeda , Yasunori Saotome
IPC分类号： C22C45/00
CPC分类号： C22C45/00 , B22D17/00 , F16H55/06 , G04B13/02
摘要： A metal-made high-precision gear and a gear mechanism are disclosed. The precision gear is made of a novel material which does not exist in conventional materials for precision gears, including resins and tool steels, has high hardness, strength and excellent surface smoothness, and is superior in workability. In the precision gear which is formed of an amorphous metal alloy having a ternary, quaternary or higher composition containing iron group elements, such as Fe, Co, Ni, and Cu, Ti, Zr, Hf, as the principal elements, the precision gear whose module is 0.2 or less is made of the amorphous metal alloy having a disordered structure which does not have a fixed regularity and whose XRD pattern is a halo pattern, namely exhibits a broad peak.
摘要翻译：公开了一种金属制高精度齿轮和齿轮机构。该精密齿轮由用于精密齿轮（包括树脂和工具钢）的常规材料中不存在的新型材料制成，具有高硬度，强度和优异的表面平滑度，并且加工性优异。精密齿轮由具有Fe，Co，Ni和Cu，Ti，Zr，Hf等铁族元素的三元，四元以上组成的非晶态金属合金作为主要元件形成，其模量为0.2以下的非晶态金属合金由具有固定规则性且XRD图案为晕形图案的无序结构即无规矩阵构成。

2. 发明申请

US20060254747A1 Injection molding apparatus 审中-公开
标题翻译：注塑设备
公开(公告)号：US20060254747A1
公开(公告)日：2006-11-16
申请号：US11487052
申请日：2006-07-14
申请人： Mamoru Ishida , Makoto Kawanishi
发明人： Mamoru Ishida , Makoto Kawanishi
IPC分类号： B22D17/12
CPC分类号： B22D17/30 , B22D17/04 , B22D17/14 , B22D17/203
摘要： An apparatus provided is capable of performing injection molding of a high-melting point metal. The injection molding apparatus comprises a mold, a sleeve disposed so as to be movable forward and backward toward a pouring gate of the mold, a plunger slidably disposed in the sleeve, a heating means for heating and melting a raw material lump supplied into a raw material accommodating part formed by an inside wall of the sleeve and the plunger mentioned above, and a raw material lump supplying means for supplying the raw material lump to the above-mentioned raw material accommodating part from above. For the purpose of ensuring that a melt of a metal which has been heated and melted hardly flows into a gap between the plunger and the sleeve, the above-mentioned plunger and/or sleeve is equipped with a cooling means.
摘要翻译：提供的装置能够进行高熔点金属的注射成型。注射成型装置包括：模具，套筒，其可以朝向模具的浇注口向前和向后移动，可滑动地设置在套筒中的柱塞，用于加热和熔化供给原料的原料块的加热装置由套筒的内壁和上述柱塞形成的材料容纳部分，以及用于从上方将原料块供给到上述原料容纳部的原料块供给装置。为了确保已经被加热和熔化的金属的熔体几乎不流入柱塞和套筒之间的间隙，上述柱塞和/或套筒配备有冷却装置。

3. 发明授权

US4883766A Method of producing thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US4883766A
公开(公告)日：1989-11-28
申请号：US269452
申请日：1988-11-10
申请人： Mamoru Ishida , Shunichi Inaki , Yoshikazu Akiyama , Mitsuhiro Kohata
发明人： Mamoru Ishida , Shunichi Inaki , Yoshikazu Akiyama , Mitsuhiro Kohata
IPC分类号： H01L27/12 , H01L21/30 , H01L21/324 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/3003 , Y10S438/909
摘要： A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiO.sub.x H.sub.y) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.
摘要翻译：制造薄膜晶体管的方法包括以下步骤：制备具有衬底，形成在衬底上的有源层和扩散层的结构以及形成在有源层上的栅电极，在该结构上形成层间绝缘体层的具有预定组成的氧化硅水合物（SiO x H y），在层间绝缘体层中形成接触孔，在层间绝缘体层上形成布线层，并进行热处理，从而使层间绝缘体层内的氢原子至少有源层和扩散层。

4. 发明授权

US5395874A Flame retardant resin composition 失效
标题翻译：阻燃树脂组合物
公开(公告)号：US5395874A
公开(公告)日：1995-03-07
申请号：US052686
申请日：1993-04-27
申请人： Ikuhiro Mishima , Rika Munakata , Mamoru Ishida
发明人： Ikuhiro Mishima , Rika Munakata , Mamoru Ishida
IPC分类号： C08K3/22 , C08K5/02 , C08K5/06 , C08K5/13 , C08K5/1515 , C08L51/04 , C08J5/10 , C08K3/10 , C08L25/04
CPC分类号： C08K5/06 , C08K3/2279 , C08K5/1515 , C08L51/04
摘要： A flame retardant resin composition which includes 100 weight parts of a rubber-reinforced styrene-based resin, 2.about.35 weight parts of an epoxy-oligomer of tetrabromobisphenol-A (A1), 2.about.35 weight parts of bis-(tribromophenoxy)ethane (A2), 1.about.15 weight parts of antimony trioxide (B), and 0.1.about.10 weight parts of chlorinated polyethylene (C), wherein the total of the above (A1), (A2), (B) and (C) are 8.about.50 weight parts and the weight ratio of (A1)/(A2) is 10/90.about.75/25. The composition of the present invention has well-balanced flame retardance and impact resistance.
摘要翻译：一种阻燃树脂组合物，其包含100重量份的橡胶增强的苯乙烯基树脂，2重量份的三溴双酚A（A1）的环氧低聚物，2重量份的35重量份的双（三溴苯氧基）乙烷（A 2），（A2），（B）和（C）的总和（A），（A 2），（A2），1 DIFFERENCE 15重量份的三氧化锑（B）和0.1重量份的氯化聚乙烯是8重量50重量份，（A1）/（A2）的重量比为10/90差异75/25。本发明的组合物具有平衡的阻燃性和耐冲击性。

5. 发明授权

US5847466A Semiconductor device and manufacturing method for the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US5847466A
公开(公告)日：1998-12-08
申请号：US759441
申请日：1996-12-05
申请人： Kazunori Ito , Mitsugu Irinoda , Kaichi Ueno , Mamoru Ishida , Takahiko Kuroda
发明人： Kazunori Ito , Mitsugu Irinoda , Kaichi Ueno , Mamoru Ishida , Takahiko Kuroda
IPC分类号： H01L21/66 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/14
摘要： A semiconductor device having a multilayer interconnection structure, includes a substrate having a metal interconnect layer provided thereon and N number (N being an integer of 2 or greater) of layers of insulating film formed one on top of another on the substrate. Each layer of insulating film has a metal interconnect layer including at least one bonding pad section provided thereon. At least one via hole filled with an electrically conductive material is provided in each of the layers for interconnecting metal interconnect layers. At least one bonding pad connecting hole filled with an electrically conductive material is provided in each of the layers for interconnecting bonding pad sections. The at least one bonding pad connecting hole is no more than twice as large in diameter as a smallest via hole.
摘要翻译：具有多层互连结构的半导体器件包括其上设置有金属互连层的基板和在基板上一个在其上彼此形成的N个绝缘膜层的N个（N为2以上的整数）。每层绝缘膜具有包括设置在其上的至少一个接合焊盘部分的金属互连层。在每个层中设置至少一个填充有导电材料的通孔，用于互连金属互连层。在每个层中设置至少一个填充有导电材料的焊盘连接孔，用于互连焊盘区段。所述至少一个焊盘连接孔的直径不小于最小通孔的直径的两倍。

6. 发明授权

US06758602B2 Optical connector and optical connector ferrule to be used therein 失效
标题翻译：用于其中的光连接器和光连接器套圈
公开(公告)号：US06758602B2
公开(公告)日：2004-07-06
申请号：US10180315
申请日：2002-06-27
申请人： Tadashi Yamaguchi , Tetsuya Katsumi , Mamoru Ishida , Hitoshi Ofune
发明人： Tadashi Yamaguchi , Tetsuya Katsumi , Mamoru Ishida , Hitoshi Ofune
IPC分类号： G02B636
CPC分类号： G02B6/4237 , G02B6/381 , G02B6/4206
摘要： An optical connector comprises a mount having an accommodating portion and an optical connector ferrule. The mount and the outer surface of the optical connector ferrule to be brought into contact therewith are made of the same kind of material, thereby securing the good weldability therebetween. In one embodiment, both the mount and the ferrule are made of an amorphous alloy. In another embodiment, the mount is made of a metal, for example stainless steel, and the ferrule comprises a body made of an amorphous alloy and a surface part covering the outer surface of the body is made of the same kind of material as the mount, i.e. a metal such as stainless steel.
摘要翻译：光连接器包括具有容纳部分和光连接器套圈的安装件。要与其接触的光连接器套圈的安装座和外表面由相同种类的材料制成，从而确保其之间良好的可焊接性。在一个实施例中，安装座和套圈均由非晶态合金制成。在另一个实施例中，安装件由金属制成，例如不锈钢，并且套圈包括由非晶合金制成的主体，并且覆盖主体外表面的表面部分由与安装件相同的材料制成，即不锈钢等金属。

7. 发明授权

US06435731B1 Ferrule having optical fiber incorporated therein as an integral part thereof and method for production thereof 失效
标题翻译：作为其组成部分并入有光纤的套圈及其制造方法
公开(公告)号：US06435731B1
公开(公告)日：2002-08-20
申请号：US09675672
申请日：2000-09-29
申请人： Tadashi Yamaguchi , Tetsuya Katsumi , Mamoru Ishida
发明人： Tadashi Yamaguchi , Tetsuya Katsumi , Mamoru Ishida
IPC分类号： G02B636
CPC分类号： G02B6/3865 , G02B6/3854 , G02B6/3855
摘要： An optical connector ferrule has an optical fiber incorporated therein as an integral part thereof, wherein the optical fiber is integrally fixed in the ferrule directly or through the medium of the metal tube embedded in the ferrule. This ferrule of the optical fiber built-in type can be produced by inserting an optical fiber or a metal tube having an optical fiber fitted therein into a mold provided with a molding cavity which defines the outer shape of an optical connector ferrule, injecting a fluid material kept at an elevated temperature into the cavity of the mold, and solidifying the cast material by cooling. The optical fiber or both the optical fiber and the metal tube are strongly fixed in the ferrule integrally by the thermal shrinkage or coagulation shrinkage of the ferrule during the production thereof.
摘要翻译：光连接器套圈具有作为其一部分结合在其中的光纤，其中光纤直接地或通过嵌入在套圈中的金属管的介质一体地固定在套圈中。该光纤内置型的套圈可以通过将具有嵌入其中的光纤的光纤或金属管插入具有限定光学连接器套圈的外形的模制腔的模具中来制造，注入流体材料保持在高温进入模具的空腔，并通过冷却固化铸造材料。在其制造过程中，光纤或者光纤和金属管两者都通过套管的热收缩或凝固收缩而一体地固定在套圈中。

8. 发明授权

US5365109A MIS semiconductor device with polysilicon gate electrode 失效
标题翻译：具有多晶硅栅电极的MIS半导体器件
公开(公告)号：US5365109A
公开(公告)日：1994-11-15
申请号：US928878
申请日：1992-08-11
申请人： Mamoru Ishida
发明人： Mamoru Ishida
IPC分类号： H01L29/78 , H01L21/02 , H01L21/28 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/06
CPC分类号： H01L28/20 , H01L21/28035 , H01L29/4908
摘要： A MIS semiconductor device comprises, on a silicon wafer, a gate oxide layer, a polysilicon gate electrode comprising a gate layer of polysilicon of grain size of not less than 0.3 .mu.m doped with boron in a doping amount of not less than 3.times.10.sup.19 atoms/cm.sup.3, and a gate insulation layer, provided with metal electrodes.
摘要翻译： MIS半导体器件在硅晶片上包括栅极氧化物层，多晶硅栅极电极，其掺杂掺杂量不小于3×1019原子/分钟的硼的晶粒尺寸不小于0.3μm的多晶硅栅极层， cm3，栅极绝缘层设置有金属电极。

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