专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09153746B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09153746B2
公开(公告)日：2015-10-06
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/52 , H01L33/00 , H01L33/38 , H01L21/50
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译：根据实施例，半导体发光器件包括具有发光层的半导体层。该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

2. 发明授权

US09099619B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09099619B2
公开(公告)日：2015-08-04
申请号：US13419684
申请日：2012-03-14
申请人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
发明人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L29/20 , H01L21/00 , H01L33/50 , H01L33/00
CPC分类号： H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.
摘要翻译：根据一个实施例，半导体发光器件包括发光部分和波长转换部分。发光部被配置为发光。波长转换部设置在发光部的一个主表面侧。波长转换部分包含磷光体。波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。

3. 发明授权

US08614455B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08614455B2
公开(公告)日：2013-12-24
申请号：US13424687
申请日：2012-03-20
申请人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
发明人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.
摘要翻译：根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。层叠体包括第一和第二半导体层和发光层。第一和第二电极分别连接到第一和第二半导体层。第一和第二互连分别连接到第一和第二电极。第一和第二支柱分别连接到第一和第二互连。第一绝缘层设置在互连和支柱上。第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

4. 发明授权

US08610163B2 Method for manufacturing semiconductor light emitting device 有权
公开(公告)号：US08610163B2
公开(公告)日：2013-12-17
申请号：US13406840
申请日：2012-02-28
申请人： Hiroshi Hamasaki , Akihiro Kojima , Yoshiaki Sugizaki
发明人： Hiroshi Hamasaki , Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/0008 , H01L33/0016 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/56 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , Y10S438/94
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.

5. 发明授权

US08445916B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08445916B2
公开(公告)日：2013-05-21
申请号：US12793943
申请日：2010-06-04
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/30 , H01L33/36 , H01L21/78
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a barrier metal layer, a first metal pillar, a second metal pillar, and a resin. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on the second major surface of the semiconductor layer and includes a silver layer. The insulating film is provided on the second major surface side of the semiconductor layer. The barrier metal layer is provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，阻挡金属层，第一金属柱，第二金属柱，和树脂。半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。第一电极设置在半导体层的第二主表面上。第二电极设置在半导体层的第二主表面上并且包括银层。绝缘膜设置在半导体层的第二主表面侧。阻挡金属层设置在第二电极和绝缘膜之间以及第二电极和第二互连之间以覆盖第二电极。

6. 发明授权

US08399275B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08399275B2
公开(公告)日：2013-03-19
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/00
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译：根据一个实施例，公开了一种制造半导体发光器件的方法。该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。透明材料透光。荧光体层形成在透明材料和多个半导体层的第一主表面上。

7. 发明授权

US08368089B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08368089B2
公开(公告)日：2013-02-05
申请号：US12885777
申请日：2010-09-20
申请人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
发明人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L29/18 , H01L33/00
CPC分类号： H01L33/50 , H01L33/46 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。透明层设置在半导体层的第一主表面上。透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。荧光材料层设置在沟槽和透明层上。荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。第一荧光体粒子的粒径小于沟槽的宽度。第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

8. 发明申请

US20120178192A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120178192A1
公开(公告)日：2012-07-12
申请号：US13423591
申请日：2012-03-19
申请人： Akihiro KOJIMA , Yoshiaki Sugizaki
发明人： Akihiro KOJIMA , Yoshiaki Sugizaki
IPC分类号： H01L33/50 , H01L33/48
CPC分类号： H01L33/486 , H01L33/44 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
摘要翻译：一种半导体发光器件，包括：包括第一主表面和第二主表面的基板，所述第一主表面包括凹部和突起，所述第二主表面形成在与所述第一主表面相对的一侧上; 设置在所述第一主表面上的第一电极; 半导体发光元件，设置在所述第一电极上并电连接到所述第一电极; 设置在所述第二主表面上的第二电极; 以及设置成在所述凹部处穿过所述基板并且电连接所述第一电极和所述第二电极的贯通电极。

9. 发明申请

US20110300644A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20110300644A1
公开(公告)日：2011-12-08
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/66
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译：根据一个实施例，公开了一种制造半导体发光器件的方法。该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。透明材料透光。荧光体层形成在透明材料和多个半导体层的第一主表面上。

10. 发明申请

US20110297969A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110297969A1
公开(公告)日：2011-12-08
申请号：US12885777
申请日：2010-09-20
申请人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
发明人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L33/08 , H01L33/26
CPC分类号： H01L33/50 , H01L33/46 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。透明层设置在半导体层的第一主表面上。透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。荧光材料层设置在沟槽和透明层上。荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。第一荧光体粒子的粒径小于沟槽的宽度。第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式