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1. 发明申请

US20120235184A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120235184A1
公开(公告)日：2012-09-20
申请号：US13419684
申请日：2012-03-14
申请人： Hiroshi KOIZUMI , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
发明人： Hiroshi KOIZUMI , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L33/08 , H01L33/50
CPC分类号： H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.
摘要翻译：根据一个实施例，半导体发光器件包括发光部分和波长转换部分。发光部被配置为发光。波长转换部设置在发光部的一个主表面侧。波长转换部分包含磷光体。波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。

2. 发明授权

US09099619B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09099619B2
公开(公告)日：2015-08-04
申请号：US13419684
申请日：2012-03-14
申请人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
发明人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L29/20 , H01L21/00 , H01L33/50 , H01L33/00
CPC分类号： H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.
摘要翻译：根据一个实施例，半导体发光器件包括发光部分和波长转换部分。发光部被配置为发光。波长转换部设置在发光部的一个主表面侧。波长转换部分包含磷光体。波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。

3. 发明授权

US08399275B2 Method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08399275B2
公开(公告)日：2013-03-19
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/00
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译：根据一个实施例，公开了一种制造半导体发光器件的方法。该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。透明材料透光。荧光体层形成在透明材料和多个半导体层的第一主表面上。

4. 发明申请

US20110300644A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20110300644A1
公开(公告)日：2011-12-08
申请号：US13153554
申请日：2011-06-06
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki , Hiroshi Koizumi , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L21/66
CPC分类号： H01L33/508 , H01L25/0753 , H01L33/0079 , H01L33/486 , H01L33/502 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.
摘要翻译：根据一个实施例，公开了一种制造半导体发光器件的方法。该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。透明材料透光。荧光体层形成在透明材料和多个半导体层的第一主表面上。

5. 发明授权

US08368089B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08368089B2
公开(公告)日：2013-02-05
申请号：US12885777
申请日：2010-09-20
申请人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
发明人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L29/18 , H01L33/00
CPC分类号： H01L33/50 , H01L33/46 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。透明层设置在半导体层的第一主表面上。透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。荧光材料层设置在沟槽和透明层上。荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。第一荧光体粒子的粒径小于沟槽的宽度。第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

6. 发明申请

US20110297969A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110297969A1
公开(公告)日：2011-12-08
申请号：US12885777
申请日：2010-09-20
申请人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
发明人： Akihiro Kojima , Hiroshi Koizumi , Yoshiaki Sugizaki , Tomomichi Naka , Yasuhide Okada
IPC分类号： H01L33/08 , H01L33/26
CPC分类号： H01L33/50 , H01L33/46 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。透明层设置在半导体层的第一主表面上。透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。荧光材料层设置在沟槽和透明层上。荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。第一荧光体粒子的粒径小于沟槽的宽度。第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

7. 发明授权

US08754429B2 Optical semiconductor device and method for manufacturing same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US08754429B2
公开(公告)日：2014-06-17
申请号：US13154999
申请日：2011-06-07
申请人： Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
发明人： Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/0095 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0058
摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.
摘要翻译：根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。发光层包括第一和第二主表面，第一和第二电极。第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。透明层设置在第一主表面上。第一金属柱设置在第一电极上。第二金属柱设置在第二电极上。密封层设置在第二主表面上。密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

8. 发明申请

US20110297987A1 OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：光学半导体器件及其制造方法
公开(公告)号：US20110297987A1
公开(公告)日：2011-12-08
申请号：US13154999
申请日：2011-06-07
申请人： Hiroshi KOIZUMI , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa
发明人： Hiroshi KOIZUMI , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa
IPC分类号： H01L33/50
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/0095 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0058
摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.
摘要翻译：根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。发光层包括第一和第二主表面，第一和第二电极。第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。透明层设置在第一主表面上。第一金属柱设置在第一电极上。第二金属柱设置在第二电极上。密封层设置在第二主表面上。密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

9. 发明申请

US20110204400A1 LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME AND APPARATUS FOR MANUFACTURING LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置，其制造方法和制造发光装置的装置
公开(公告)号：US20110204400A1
公开(公告)日：2011-08-25
申请号：US13026631
申请日：2011-02-14
申请人： Hiroshi Koizumi , Yasuhide Okada , Junsei Yamabe , Naoaki Sakurai
发明人： Hiroshi Koizumi , Yasuhide Okada , Junsei Yamabe , Naoaki Sakurai
IPC分类号： H01L33/58 , H01L21/66 , H01L21/00
CPC分类号： H05B33/145 , H01L33/504 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0041 , H05B33/10 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a package member, a light emitting element provided in the package member, a first phosphor layer and a second phosphor layer. A first phosphor layer is provided on the light emitting element and has a first phosphor. A second phosphor layer is provided on the first phosphor layer and has a second phosphor. A luminescent efficiency of the first phosphor is higher than a luminescent efficiency of the second phosphor.
摘要翻译：根据一个实施例，发光器件包括封装构件，设置在封装构件中的发光元件，第一荧光体层和第二荧光体层。第一荧光体层设置在发光元件上并具有第一荧光体。第二荧光体层设置在第一荧光体层上并具有第二荧光体。第一荧光体的发光效率高于第二荧光体的发光效率。

10. 发明申请

US20060261354A1 Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20060261354A1
公开(公告)日：2006-11-23
申请号：US11430966
申请日：2006-05-10
申请人： Yasuhide Okada , Takayoshi Fujii , Kazuo Horiuchi
发明人： Yasuhide Okada , Takayoshi Fujii , Kazuo Horiuchi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/08
摘要： A semiconductor light-emitting device includes a substrate having light transmission characteristics, a light emission layer on a surface side of the substrate, and which emits light when being energized, and a pair of electrodes to energize the light emission layer, wherein a surface of the substrate which is located opposite to the light emission layer is formed to include groove portion through which light generated from the light emission layer and then entering the substrate is emitted from the substrate.
摘要翻译：一种半导体发光器件包括具有光透射特性的衬底，在衬底的表面侧上的发光层，并且在被通电时发光;以及一对电极，用于激发发光层，其中，与发光层相对的基板形成为包括从发光层产生的光然后进入基板的光从基板射出的槽部。

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