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1. 发明申请

US20080160204A1 Spontaneous copper seed deposition process for metal interconnects 审中-公开
标题翻译：金属互连的自发铜种子沉积工艺
公开(公告)号：US20080160204A1
公开(公告)日：2008-07-03
申请号：US11648006
申请日：2006-12-28
申请人： Adrien R. Lavoie , James M. Blackwell , Darryl J. Morrison , Manish Sharma
发明人： Adrien R. Lavoie , James M. Blackwell , Darryl J. Morrison , Manish Sharma
IPC分类号： B05D1/18 , B05C3/00
CPC分类号： H01L21/288 , C23C18/38 , C23C18/40 , C25D3/38 , H01L21/76873 , H01L21/76874
摘要： A method for depositing a copper seed layer onto a semiconductor substrate comprises applying a SCuD plating bath onto a surface of a substrate, rinsing the surface with an organic solvent, applying a co-reactant bath to the surface, and again rinsing the surface with an organic solvent. The SCuD plating bath is non-aqueous and comprises a copper precursor that is dissolved into an organic solvent. The co-reactant bath is also non-aqueous and comprises a co-reactant dissolved into an organic solvent. The SCuD plating bath may be heated before being applied to the substrate surface.
摘要翻译：一种将铜籽晶层沉积在半导体衬底上的方法包括将SCuD电镀浴施加到衬底的表面上，用有机溶剂冲洗表面，向表面施加共反应物浴，再次用有机溶剂。 SCUD电镀浴是非水性的并且包含溶解在有机溶剂中的铜前体。共反应物浴也是非水的并且包含溶解在有机溶剂中的共反应物。可以在施加到基板表面之前加热SCUD电镀浴。

2. 发明申请

US20080160176A1 Method of fabricating iridium layer with volatile precursor 审中-公开
标题翻译：用挥发性前体制备铱层的方法
公开(公告)号：US20080160176A1
公开(公告)日：2008-07-03
申请号：US11647984
申请日：2006-12-28
申请人： James M. Blackwell , Adrien R. Lavoie , Darryl J. Morrison , Bill Barrow
发明人： James M. Blackwell , Adrien R. Lavoie , Darryl J. Morrison , Bill Barrow
IPC分类号： B05D5/12
CPC分类号： C23C16/18 , C23C16/45525 , C23C16/45553
摘要： An iridium precursor, and an iridium layer from the precursor is described. The Ir(I) in the precursor becomes Ir(III) in a reduction pathway before forming an Ir(0) layer.
摘要翻译：描述了铱前体和来自前体的铱层。在形成Ir（0）层之前，前体中的Ir（I）在还原途径中变为Ir（III）。

3. 发明申请

US20090004385A1 Copper precursors for deposition processes 审中-公开
标题翻译：用于沉积工艺的铜前体
公开(公告)号：US20090004385A1
公开(公告)日：2009-01-01
申请号：US11824291
申请日：2007-06-29
申请人： James M. Blackwell , Darryl J. Morrison , Adrien R. Lavoie
发明人： James M. Blackwell , Darryl J. Morrison , Adrien R. Lavoie
IPC分类号： C23C16/00
CPC分类号： C23C16/18 , H01L21/28556 , H01L21/76843 , H01L21/76861 , H01L21/76864 , H01L21/76873
摘要： In one embodiment, a method comprises providing a chemical phase deposition copper precursor within a chemical phase deposition chamber; and depositing a metal film onto a substrate with the copper precursor by a chemical phase deposition process.
摘要翻译：在一个实施方案中，一种方法包括在化学相沉积室内提供化学相沉积铜前体; 以及通过化学相沉积工艺将金属膜沉积在具有铜前体的基底上。

4. 发明授权

US07763317B2 High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces 失效
标题翻译：金属三氟甲磺酸盐或三氟乙酸封端III-V半导体表面上的高K电介质生长
公开(公告)号：US07763317B2
公开(公告)日：2010-07-27
申请号：US11694781
申请日：2007-03-30
申请人： James M. Blackwell , Willy Rachmady , Gregory J. Kearns , Darryl J. Morrison
发明人： James M. Blackwell , Willy Rachmady , Gregory J. Kearns , Darryl J. Morrison
IPC分类号： C23C16/00
CPC分类号： H01L21/0228 , H01L21/02178 , H01L21/306 , H01L21/3141
摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.
摘要翻译：描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。在另一个实施方案中，通过使三氟甲磺酸酯或三氟乙酸酯保护基团与质子源如水（H 2 O）反应，钝化的化合物半导体表面在ALD室中活化。然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3）。

5. 发明申请

US20080241423A1 HIGH K DIELECTRIC GROWTH ON METAL TRIFLATE OR TRIFLUOROACETATE TERMINATED III-V SEMICONDUCTOR SURFACES 失效
标题翻译：金属三聚物或三氟化铵终止的III-V半导体表面的高K电介质生长
公开(公告)号：US20080241423A1
公开(公告)日：2008-10-02
申请号：US11694781
申请日：2007-03-30
申请人： James M. Blackwell , Willy Rachmady , Gregory J. Kearns , Darryl J. Morrison
发明人： James M. Blackwell , Willy Rachmady , Gregory J. Kearns , Darryl J. Morrison
IPC分类号： C23C22/00
CPC分类号： H01L21/0228 , H01L21/02178 , H01L21/306 , H01L21/3141
摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.
摘要翻译：描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。在另一个实施方案中，钝化的化合物半导体表面通过使三氟甲磺酸酯或三氟乙酸酯保护基与质子源（例如水（H 2 O 2））反应而在ALD室中活化。然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3 O 3）。

6. 发明授权

US09406512B2 Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects 有权
公开(公告)号：US09406512B2
公开(公告)日：2016-08-02
申请号：US14720821
申请日：2015-05-24
申请人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
发明人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
IPC分类号： H01L21/033 , H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31144 , H01L21/76801 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.

7. 发明申请

US20150255284A1 SELF-ALIGNED VIA PATTERNING WITH MULTI-COLORED PHOTOBUCKETS FOR BACK END OF LINE (BEOL) INTERCONNECTS 审中-公开
标题翻译：自动对准通过多行彩色胶片的背面（BEOL）互连
公开(公告)号：US20150255284A1
公开(公告)日：2015-09-10
申请号：US14720821
申请日：2015-05-24
申请人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
发明人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
IPC分类号： H01L21/033 , H01L23/532 , H01L23/522 , H01L21/768 , H01L23/528
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31144 , H01L21/76801 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.
摘要翻译：描述了通过用于后端（BEOL）互连的多色photobuckets图案化的自对准。在一个示例中，用于集成电路的互连结构包括布置在衬底上方的互连结构的第一层，第一层包括在第一方向上交替的金属线和介质线的第一光栅。介质线具有高于金属线的最上表面的最上表面。所述互连结构的第二层设置在所述互连结构的所述第一层上方，所述第二层包括垂直于所述第一方向的第二方向的交替金属线和介质线的第二光栅。介质线具有比第二光栅的金属线的最下表面低的最低表面。第二光栅的介质线与第一光栅的介质线重叠并接触，但不同。第一和第二电介质区域设置在第一光栅的金属线和第二光栅的金属线之间，并且在与第一光栅的介电线的上部和第二栅的介电线的下部相同的平面中光栅。第一电介质区域由第一交联光可光化材料组成，第二电介质区域由第二不同的交联光可光化材料组成。

8. 发明申请

US20150176119A1 ADDITIVES TO IMPROVE THE PERFORMANCE OF A PRECURSOR SOURCE FOR COBALT DEPOSITION 有权
标题翻译：提高钴沉淀前驱源的性能的添加剂
公开(公告)号：US20150176119A1
公开(公告)日：2015-06-25
申请号：US14134087
申请日：2013-12-19
申请人： James M. Blackwell , Daniel B. Bergstrom , Scott B. Clendenning , Patricio E. Romero
发明人： James M. Blackwell , Daniel B. Bergstrom , Scott B. Clendenning , Patricio E. Romero
IPC分类号： C23C16/06
CPC分类号： C23C16/18
摘要： Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule.
摘要翻译：描述了使用包含添加剂的钴前体形成钴膜的方法。这些方法可以包括将添加剂添加到钴前体中，其中钴前体位于与沉积工具耦合的安瓿中，然后使用包含添加剂的钴前体形成钴膜。钴前体的非挥发性分解产物溶解在安瓿中。

9. 发明授权

US08441006B2 Cyclic carbosilane dielectric films 有权
公开(公告)号：US08441006B2
公开(公告)日：2013-05-14
申请号：US12978385
申请日：2010-12-23
申请人： David J. Michalak , James M. Blackwell , James S. Clarke
发明人： David J. Michalak , James M. Blackwell , James S. Clarke
IPC分类号： H01L51/00
CPC分类号： H01L21/02203 , C07F7/0816 , C07F7/1804 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L29/0649 , H01L51/0035 , H01L51/0094
摘要： Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores.

10. 发明申请

US20150171029A1 INVERSE NANOSTRUCTURE DIELECTRIC LAYERS 审中-公开
标题翻译：反相纳米结构电介质层
公开(公告)号：US20150171029A1
公开(公告)日：2015-06-18
申请号：US14108239
申请日：2013-12-16
申请人： David J. Michalak , James M. Blackwell , Arkaprabha Sengupta
发明人： David J. Michalak , James M. Blackwell , Arkaprabha Sengupta
IPC分类号： H01L23/00 , H01L23/50 , H01L21/02
CPC分类号： H01L21/02282 , H01L21/02203 , H01L21/31144 , H01L21/32 , H01L21/7682 , H01L21/76826 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/249975 , H01L2924/00
摘要： Embodiments of the present disclosure describe dielectric layers and methods for their fabrication and use. In some embodiments, a dielectric layer may include a dielectric material and a plurality of pores, wherein the dielectric material is arranged in an inverse nanostructure arrangement around the plurality of pores. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例描述了用于其制造和使用的电介质层及其方法。在一些实施例中，电介质层可以包括电介质材料和多个孔，其中电介质材料围绕多个孔布置成反向纳米结构布置。可以描述和/或要求保护其他实施例。

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