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1. 发明授权

US07250134B2 Infiltrating a powder metal skeleton by a similar alloy with depressed melting point exploiting a persistent liquid phase at equilibrium, suitable for fabricating steel parts 有权
标题翻译：通过相似的合金渗透粉末金属骨架，熔点低于平衡时持续的液相，适用于制造钢件
公开(公告)号：US07250134B2
公开(公告)日：2007-07-31
申请号：US10723989
申请日：2003-11-26
申请人： Brian D. Kernan , Emanuel M. Sachs , Samuel M. Allen , Adam M. Lorenz
发明人： Brian D. Kernan , Emanuel M. Sachs , Samuel M. Allen , Adam M. Lorenz
IPC分类号： B22F3/26
CPC分类号： C22C38/18 , B33Y80/00 , C22C33/0242
摘要： A steel powder metal skeleton is infiltrated with an infiltrant composition similar to the skeleton, with an additional agent that depresses the melting point of the infiltrant relative to the skeleton. Infiltration is driven primarily by capillary pressure. The powder and infiltrant compositions differ primarily only in a higher concentration of a melting point depressant agent “MPD” in the infiltrant. Carbon (C) and silicon (Si) and several other elements can be elements in an MPD, either alone or in combination. Certain steel target compositions are such that a complementary infiltrant, and skeleton can be chosen such that a skeleton will remain solid at an infiltration temperature at which the infiltrant can be melted and fully infiltrated, and further where there is a persistent two phase field, with a liquid phase that is large enough (greater than 7% vol, and typically between 20 and 40 vol %) so that flow can be maintained without choke off from diffusional solidification. The solid and the liquid phases remaining after any diffusional solidification have different compositions, with a bulk composition of the target. Typically the difference is slight, and the full part is substantially homogeneous. Heat treating, such as austenitizing, quenching, or slow cooling and tempering, can improve homogeneity and mechanical properties. The MPD can have a relatively high diffusivity and solubility in the skeleton. Methods of designing systems of target, skeleton and infiltrant compositions and infiltration temperature are disclosed.
摘要翻译：钢粉末金属骨架用类似于骨架的渗透剂组合物渗透，另外一种可以降低渗透剂相对于骨架的熔点的试剂。渗透主要由毛细管压力驱动。粉末和渗透剂组合物主要仅在浸润剂中较高浓度的熔点降低剂“MPD”。碳（C）和硅（Si）等几种元素可以单独或组合使用在MPD中的元素。某些钢靶组合物使得可以选择互补的浸润剂和骨架，使得骨架将在浸润剂可以熔化和完全渗透的浸润温度下保持固体，并且进一步存在持续的两相场，其中足够大的液相（大于7体积％，通常在20和40体积％之间），从而可以保持流动而不会阻碍扩散凝固。在任何扩散固化后残留的固体和液相具有不同的组成，具有靶的体积组成。通常，差异很小，整个部分基本上是均匀的。诸如奥氏体化，淬火或缓慢冷却和回火的热处理可以改善均匀性和机械性能。 MPD可以在骨架中具有相对较高的扩散性和溶解性。公开了设计目标，骨架和浸润剂组合物系统的方法和浸润温度。

2. 发明授权

US06719948B2 Techniques for infiltration of a powder metal skeleton by a similar alloy with melting point depressed 有权
标题翻译：通过熔点相似的合金浸入粉末金属骨架的技术
公开(公告)号：US06719948B2
公开(公告)日：2004-04-13
申请号：US09863073
申请日：2001-05-21
申请人： Adam M. Lorenz , Emanuel M. Sachs , Samuel M. Allen
发明人： Adam M. Lorenz , Emanuel M. Sachs , Samuel M. Allen
IPC分类号： B22F326
CPC分类号： B22F3/26 , B33Y80/00
摘要： In infiltrating a porous metal skeleton an infiltrant composition is used similar to that of the powder skeleton, but with the addition of a melting point depressant. The infiltrant quickly fills the skeleton. As the melting point depressant diffuses into the base powder, the liquid may undergo diffusional solidification and the material eventually homogenizes. Maintaining the infiltrant at a liquidus composition for the infiltration temperature typically ensures that the bulk composition or properties will remain uniform throughout the part, particularly in the direction of infiltration. Success of such an infiltration is enhanced by effective means of maintaining the molten infiltrant at a liquidus composition. It is also beneficial, in some cases, for the time scale of the infiltration to be much faster than the time scale of the diffusion of the melting point depressant and the subsequent solidification and homogenization. The relative rates of infiltration and diffusion/solidification rate are significantly impacted by the choice of materials system. Other factors also influence these rates. They include: selection of powder size (diameter), shape, surface roughness, and size distribution, feeding liquid from different locations, liquid feeder channels, smoothing of the part surface with fine powder and affecting infiltrant fluid properties. Various material systems are also disclosed, as are methods of designing a process of infiltrating a part, including binary and ternary and higher component systems. Homogeneous composition may be achieved using these techniques, particularly along the direction of infiltration.
摘要翻译：在渗透多孔金属骨架时，使用类似于粉末骨架的浸润剂组合物，但加入了降低熔点的组合物。渗透剂快速填满骨架。当熔点降低剂扩散到基础粉末中时，液体可能经历扩散凝固，并且材料最终均匀化。为了渗透温度将浸润剂维持在液相线组合物上通常确保整个组分或性质在整个部分，特别是在渗透方向上保持均匀。通过将熔融浸润剂保持在液相组成的有效手段来增强这种浸渗的成功。在某些情况下，渗透的时间尺度比熔点抑制剂的扩散时间尺度和随后的凝固和均化也快得多也是有益的。渗透和扩散/凝固速率的相对速率受材料体系选择的影响很大。其他因素也影响这些利率。它们包括：选择粉末尺寸（直径），形状，表面粗糙度和尺寸分布，从不同位置输送液体，液体进料通道，用细粉进行部分表面的平滑处理并影响浸润液的性质。还公开了各种材料系统，以及设计渗透部件的方法的方法，包括二元和三元和更高分量系统。使用这些技术可以实现均匀组合，特别是沿渗透方向。

3. 发明申请

US20120067273A1 METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL FOR SOLAR CELLS AND THE LIKE 有权
标题翻译：用于有效地制造用于太阳能电池的材料的半导体体的方法
公开(公告)号：US20120067273A1
公开(公告)日：2012-03-22
申请号：US13299031
申请日：2011-11-17
申请人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
发明人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
IPC分类号： C30B11/00 , C30B19/10
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

4. 发明授权

US07060222B2 Infiltration of a powder metal skeleton of similar materials using melting point depressant 有权
标题翻译：使用熔点降低剂渗透类似材料的粉末金属骨架
公开(公告)号：US07060222B2
公开(公告)日：2006-06-13
申请号：US10276457
申请日：2001-05-21
申请人： Emanuel M. Sachs , Adam M. Lorenz , Samuel Allen
发明人： Emanuel M. Sachs , Adam M. Lorenz , Samuel Allen
IPC分类号： B22F3/26
CPC分类号： C22C1/0475 , B22F3/26
摘要： An infiltrant is used to fill a metal powder skeleton. The infiltrant is similar in composition to the base powder, but contains a melting point depressant. The infiltrant will quickly fill the powder skeleton, then as the melting point depressant diffuses into the base powder, the liquid will undergo solidification and the material will eventually homogenize. This process allows more accurate control of dimensions in large parts with uniform or homogeneous microstructure or bulk properties.
摘要翻译：浸润剂用于填充金属粉末骨架。浸润剂的组成与基础粉末相似，但含有一种熔点降低剂。渗透剂将迅速填充粉末骨架，然后当熔点降低剂扩散到基础粉末中时，液体将经历凝固，材料将最终均匀化。该方法允许在大部分中具有均匀或均匀的微观结构或体积性质的更精确的尺寸控制。

5. 发明授权

US08293009B2 Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like 有权
标题翻译：用于从太阳能电池等的熔融材料有效地制造薄的半导体本体的方法
公开(公告)号：US08293009B2
公开(公告)日：2012-10-23
申请号：US13299031
申请日：2011-11-17
申请人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
发明人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
IPC分类号： C30B15/02
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

6. 发明申请

US20110247549A1 METHODS AND APPARATI FOR MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL 审中-公开
标题翻译：用于制备薄膜半导体体的方法和装置
公开(公告)号：US20110247549A1
公开(公告)日：2011-10-13
申请号：US12999206
申请日：2010-03-09
申请人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
发明人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
IPC分类号： C30B11/02 , C30B15/00
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，并在其上形成半导体（例如硅）晶片。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

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