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1. 发明授权

US07250134B2 Infiltrating a powder metal skeleton by a similar alloy with depressed melting point exploiting a persistent liquid phase at equilibrium, suitable for fabricating steel parts 有权
标题翻译：通过相似的合金渗透粉末金属骨架，熔点低于平衡时持续的液相，适用于制造钢件
公开(公告)号：US07250134B2
公开(公告)日：2007-07-31
申请号：US10723989
申请日：2003-11-26
申请人： Brian D. Kernan , Emanuel M. Sachs , Samuel M. Allen , Adam M. Lorenz
发明人： Brian D. Kernan , Emanuel M. Sachs , Samuel M. Allen , Adam M. Lorenz
IPC分类号： B22F3/26
CPC分类号： C22C38/18 , B33Y80/00 , C22C33/0242
摘要： A steel powder metal skeleton is infiltrated with an infiltrant composition similar to the skeleton, with an additional agent that depresses the melting point of the infiltrant relative to the skeleton. Infiltration is driven primarily by capillary pressure. The powder and infiltrant compositions differ primarily only in a higher concentration of a melting point depressant agent “MPD” in the infiltrant. Carbon (C) and silicon (Si) and several other elements can be elements in an MPD, either alone or in combination. Certain steel target compositions are such that a complementary infiltrant, and skeleton can be chosen such that a skeleton will remain solid at an infiltration temperature at which the infiltrant can be melted and fully infiltrated, and further where there is a persistent two phase field, with a liquid phase that is large enough (greater than 7% vol, and typically between 20 and 40 vol %) so that flow can be maintained without choke off from diffusional solidification. The solid and the liquid phases remaining after any diffusional solidification have different compositions, with a bulk composition of the target. Typically the difference is slight, and the full part is substantially homogeneous. Heat treating, such as austenitizing, quenching, or slow cooling and tempering, can improve homogeneity and mechanical properties. The MPD can have a relatively high diffusivity and solubility in the skeleton. Methods of designing systems of target, skeleton and infiltrant compositions and infiltration temperature are disclosed.
摘要翻译：钢粉末金属骨架用类似于骨架的渗透剂组合物渗透，另外一种可以降低渗透剂相对于骨架的熔点的试剂。渗透主要由毛细管压力驱动。粉末和渗透剂组合物主要仅在浸润剂中较高浓度的熔点降低剂“MPD”。碳（C）和硅（Si）等几种元素可以单独或组合使用在MPD中的元素。某些钢靶组合物使得可以选择互补的浸润剂和骨架，使得骨架将在浸润剂可以熔化和完全渗透的浸润温度下保持固体，并且进一步存在持续的两相场，其中足够大的液相（大于7体积％，通常在20和40体积％之间），从而可以保持流动而不会阻碍扩散凝固。在任何扩散固化后残留的固体和液相具有不同的组成，具有靶的体积组成。通常，差异很小，整个部分基本上是均匀的。诸如奥氏体化，淬火或缓慢冷却和回火的热处理可以改善均匀性和机械性能。 MPD可以在骨架中具有相对较高的扩散性和溶解性。公开了设计目标，骨架和浸润剂组合物系统的方法和浸润温度。

2. 发明授权

US6033788A Process for joining powder metallurgy objects in the green (or brown) state 失效
标题翻译：将粉末冶金物体接合在绿色（或棕色）状态的方法
公开(公告)号：US6033788A
公开(公告)日：2000-03-07
申请号：US969872
申请日：1997-11-14
申请人： James D. Cawley , William H. Glime , Brian D. Kernan
发明人： James D. Cawley , William H. Glime , Brian D. Kernan
IPC分类号： B22F7/06 , C04B37/00 , B22F7/02
CPC分类号： B22F7/062 , B22F2998/00 , B22F2998/10 , Y10T428/12014 , Y10T428/12028
摘要： In a process for producing powder metallurgy objects containing two or more individually formed pieces, the individual formed pieces or powder compacts which are comprised of powder and a binder are joined together. A polymer compatible with the binder is sandwiched between two such powder compacts. A lamination joint is formed. The polymer is then softened, and a resultant aggregate body is thermally processed to remove the binder and polymer. The resulting object has no residual interface between the original individually formed pieces. There is no discernable boundary at the lamination joint. The final part is homogeneous and uniform with no foreign material or structural imperfections at the joint.
摘要翻译：在包含两个或多个单独形成的片的粉末冶金物品的制造方法中，将由粉末和粘合剂构成的各个成形片或粉末压块接合在一起。与粘合剂相容的聚合物夹在两个这样的粉末压块之间。形成层压接头。然后将聚合物软化，并将所得的聚集体进行热处理以除去粘合剂和聚合物。所得到的对象在原始单独形成的部件之间没有残留界面。在层压接头处没有可辨别的边界。最终部件均匀均匀，无异物或结构缺陷。

3. 发明申请

US20120125254A1 Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace 审中-公开
标题翻译：减少多通道炉中生长的半导体晶体片电阻率范围的方法
公开(公告)号：US20120125254A1
公开(公告)日：2012-05-24
申请号：US12952288
申请日：2010-11-23
申请人： Brian D. Kernan , Gary J. Tarnowski , Weidong Huang , Scott Reitsma , Christine Richardson
发明人： Brian D. Kernan , Gary J. Tarnowski , Weidong Huang , Scott Reitsma , Christine Richardson
IPC分类号： C30B11/02
CPC分类号： C30B29/06 , C30B15/007
摘要： A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.
摘要翻译：一种减少在多通道生长炉中生产的半导体晶体片的电阻率范围的方法。提供一种用于生长结晶片的炉子，其包括具有材料导入区域的坩埚和包括多个晶片生长通道的晶体生长区域。该坩埚被构造成从物料导入区域向离物料导入区域最远的晶体片生长通道产生大致一定方向的材料流。掺杂有大量微量的p型掺杂剂和n型掺杂剂的硅被引入到材料引入区域中。掺杂的硅在坩埚中形成熔融物质，称为熔体。在晶体生长区域中的每个生长通道处的熔体形成结晶片。共掺杂硅原料可以减少在每个通道中形成的结晶片之间的电阻率的变化。

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