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    • 7. 发明授权
    • Dopant delivery system for semiconductor manufacture
    • 用于半导体制造的掺杂剂输送系统
    • US4936877A
    • 1990-06-26
    • US381583
    • 1989-07-18
    • Steven J. HultquistGlenn M. Tom
    • Steven J. HultquistGlenn M. Tom
    • B01D53/22C30B25/14
    • C23C16/45561B01D53/22C30B25/14
    • A gas delivery system for supplying a vapor phase constituent at low concentration in a carrier gas, wherein the carrier gas is flowed through a contacting zone in which is disposed a permeable film through which the vapor phase constituent permeates into the contacing zone, to yield a product gas mixture comprising the vapor phase constituent and the carrier gas. In a particularly preferred embodiment, concentration of the vapor phase constituent in the product gas mixture is sensed, e.g., by a surface acoustical wave (SAW) concentration sensor device, and the concentration sensing is employed to controllably adjust the flow rate of the carrier gas flowed through the contacting zone, to maintain a selected delivery rate and concentration of the vapor phase constituent in the product gas mixture. The gas delivery system of the invention has particular utility for supplying gaseous dopant source compounds such as arsine, hydrogen selenide, and/or hydrogen telluride, for fabrication of semiconducting materials and semiconductor devices.
    • 一种用于在载气中提供低浓度的气相成分的气体输送系统,其中所述载气流过其中设置有透气膜的接触区,所述渗透膜通过所述渗透膜,所述气相组分渗透到所述引导区中,以产生 产物气体混合物,其包含气相成分和载气。 在特别优选的实施方案中,例如通过表面声波(SAW)浓度传感器装置感测产物气体混合物中气相成分的浓度,采用浓度检测来可控地调节载气的流速 流过接触区,以保持产物气体混合物中气相成分选择的输送速率和浓度。 本发明的气体输送系统特别适用于供应气态掺杂剂源化合物如胂,硒化氢和/或碲化氢,以制造半导体材料和半导体器件。