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1. 发明授权

US06183971B2 Human betacellulin-specific antibodies and uses thereof 失效
标题翻译：人类细胞素特异性抗体及其用途
公开(公告)号：US06183971B2
公开(公告)日：2001-02-06
申请号：US08663191
申请日：1996-06-11
申请人： Reiko Sasada , Tatsuya Watanabe , Yukio Toyoda
发明人： Reiko Sasada , Tatsuya Watanabe , Yukio Toyoda
IPC分类号： G01N3353
CPC分类号： C07K14/475 , A61K38/00 , C07K16/22 , C07K2317/73 , Y10S435/81
摘要： Disclosed are an antibody which have a binding activity to human betacellulin protein or a mutein thereof with specificity; especially a monoclonal antibody which does not have cross reactitivity with human epidermal growth factor (EGF) and human transforming growth factor a (TGF-&agr;), belongs to the immunoglobulin class of IgG, and,specifically binds to human betacellulin protein to neutralize biological activity thereof; a hybridoma for producing the monoclonal antibody; and a method for producing the monoclonal antibody. Said monoclonal antibody neutralizes biological activity of a human BTC protein, and bind to the protein with high sensitivity and specificity, so that they can be used as a therapeutic agent for diseases such as arterial sclerosis and cancers, and also used as a reagent for assaying the human BTC protein or a mutein thereof and as a diagnostic agent for diabetes or complications thereof.
摘要翻译：公开了具有与特异性的人β细胞素蛋白或其突变蛋白结合活性的抗体; 特别是与人表皮生长因子（EGF）和人转化生长因子α（TGF-α）不具有交叉反应性的单克隆抗体属于IgG的免疫球蛋白类，并且特异性结合人β细胞素蛋白以中和生物活性的; 用于产生单克隆抗体的杂交瘤; 和单克隆抗体的制造方法。所述单克隆抗体中和人BTC蛋白的生物活性，并以高灵敏度和特异性结合蛋白质，使其可用作疾病如动脉硬化和癌症的治疗剂，并且还可用作测定试剂人BTC蛋白或其突变蛋白，并且作为糖尿病的诊断剂或其并发症。

2. 发明授权

US5506135A Hybrid monoclonal antibodies, their production and use 失效
标题翻译：混合单克隆抗体，其生产和使用
公开(公告)号：US5506135A
公开(公告)日：1996-04-09
申请号：US366366
申请日：1994-12-29
申请人： Susumu Iwasa , Tomofumi Kurokawa , Yukio Toyoda
发明人： Susumu Iwasa , Tomofumi Kurokawa , Yukio Toyoda
IPC分类号： A61K38/00 , A61K38/46 , A61K39/395 , A61K45/00 , A61K47/48 , C07K16/46 , C12N5/10 , C12N15/02 , C12P21/08 , C12R1/91 , C12N5/18 , C07K16/36 , C07K16/40
CPC分类号： C07K16/468 , A61K47/4843 , A61K47/48676 , A61K38/00
摘要： The present invention provides a hybrid monoclonal antibody having specificities against fibrin and thrombolytic substance, a polydoma which produces said antibody and thrombolytic agent comprising said antibody and thrombolytic substance which is immunologically coupled thereto, and methods of using said antibody in combination with thrombolytic substance for lysis or removal of thrombi.
摘要翻译：本发明提供了具有纤维蛋白和溶栓物质特异性的杂交单克隆抗体，产生所述抗体的多核苷酸和包含所述抗体的血栓溶解剂和与其免疫相结合的溶栓物质，以及将所述抗体与溶栓物质组合使用的方法或去除血栓。

3. 发明授权

US5376225A Method of forming fine structure on compound semiconductor with inclined ion beam etching 失效
标题翻译：用倾斜离子束蚀刻在化合物半导体上形成精细结构的方法
公开(公告)号：US5376225A
公开(公告)日：1994-12-27
申请号：US2973
申请日：1993-01-11
申请人： Shinichi Wakabayashi , Hitomaro Tougou , Yukio Toyoda
发明人： Shinichi Wakabayashi , Hitomaro Tougou , Yukio Toyoda
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/335 , H01S5/00 , H01L21/00
CPC分类号： B82Y10/00 , H01L21/3081 , H01L29/66469 , Y10S438/947 , Y10S438/962
摘要： A first method of forming a fine structure on a compound semiconductor for providing vertical side wall surfaces of a wire is as follows:One side wall surface of a wire is formed by applying an ion beam for etching with a predetermined incident angle on the side of this side wall surface to a surface of a compound semiconductor layer having a multiquantum well structure, covered with a first mask to from this side wall surface; and then, the other side wall surface is formed by applying the ion beam with the predetermined incident angle from the side of the other side wall surface to be formed after removal of the first mask and forming a second mask for forming the other side wall surface. In a second method, a third mask having a stripe pattern is formed on the surface of the compound semiconductor; one side of the wire is formed by first etching with the slantwise incident ion beam. The second etching is also formed similarly by the ion beam with the one side wall surface is protected. In the third method, a substantially circle mask is formed; and etched with the slantwise incident ion beam with the work being rotated.
摘要翻译：在用于提供线的垂直侧壁表面的化合物半导体上形成精细结构的第一种方法如下：线的一个侧壁表面通过以预定的入射角施加用于蚀刻的离子束该侧壁表面到具有多量子阱结构的化合物半导体层的表面，被覆有来自该侧壁表面的第一掩模; 然后，通过在去除第一掩模之后从另一侧壁表面侧施加预定入射角的离子束形成另一侧壁表面，并形成用于形成另一侧壁表面的第二掩模。在第二种方法中，在化合物半导体的表面上形成具有条纹图案的第三掩模; 线的一侧通过用倾斜入射离子束进行第一次蚀刻而形成。第二蚀刻也通过离子束类似地形成，其中一个侧壁表面被保护。在第三种方法中，形成大致圆形的掩模; 并在工作旋转的情况下用倾斜入射离子束进行蚀刻。

4. 发明授权

US5316640A Fabricating method of micro lens 失效
标题翻译：微晶镜的制作方法
公开(公告)号：US5316640A
公开(公告)日：1994-05-31
申请号：US896018
申请日：1992-06-09
申请人： Shinichi Wakabayashi , Hitomaro Tougou , Yukio Toyoda , Yoshimasa Ohki
发明人： Shinichi Wakabayashi , Hitomaro Tougou , Yukio Toyoda , Yoshimasa Ohki
IPC分类号： G02B6/124 , H01L21/00
CPC分类号： G02B6/1245
摘要： A testing sample is formed in a three-story structure consisting of a photo-resist 13, a silicon dioxide film 12, and a GaAs substrate 11. The pattern of the photo-resist 13 is transferred onto the silicon dioxide film 12 by effecting the photo-resist 13 as a mask. Thus obtained silicon dioxide film mask 14 and the GaAs substrate 11 are processed in compliance with a reactive ion beam etching method; that is, the silicon dioxide film mask 14 and the GaAs substrate 11 are irradiated by the chlorine ion beam 15. The silicon dioxide film and the GaAs substrate are gradually etched by the irradiation of the chlorine ion beam 15. In this case, the etching is differently developed in two regions. In one region which is not covered by the mask, the etching advances uniformly in a normal direction with respect to the GaAs substrate at a certain etching rate. On the other hand, in the other region which is covered by the mask, the silicon dioxide film is gradually etched first of all, and the tapered portion of the silicon dioxide film is completely etched earlier than other portion of the silicon dioxide film. Then, the GaAs surface is exposed to the chlorine ion beam at the portion the silicon dioxide film is removed and, in turn, the GaAs substrate is gradually etched by being directly irradiated by the chlorine beam. And, when the silicon dioxide film mask is completely removed, the micro lens is finally formed on the GaAs substrate.
摘要翻译：测试样品形成为由光致抗蚀剂13，二氧化硅膜12和GaAs衬底11组成的三层结构。光致抗蚀剂13的图案通过实施光阻13作为掩模。由此获得的二氧化硅膜掩模14和GaAs衬底11根据反应离子束蚀刻方法进行加工; 也就是说，二氧化硅膜掩模14和GaAs衬底11被氯离子束15照射。二氧化硅膜和GaAs衬底通过氯离子束15的照射逐渐蚀刻。在这种情况下，蚀刻在两个地区有不同的发展。在未被掩模覆盖的一个区域中，蚀刻以一定的蚀刻速率相对于GaAs衬底在法线方向均匀地前进。另一方面，在由掩模覆盖的其他区域中，首先逐渐蚀刻二氧化硅膜，并且二氧化硅膜的锥形部分比二氧化硅膜的其它部分更早地完全蚀刻。然后，在除去二氧化硅膜的部分，将GaAs表面暴露于氯离子束，并且继而通过直接用氯束照射GaAs衬底而逐渐蚀刻。并且，当完全除去二氧化硅膜掩模时，最终在GaAs衬底上形成微透镜。

5. 发明授权

US5141736A Bispecific monoclonal antibody, its production and use 失效
标题翻译：双特异性单克隆抗体，其生产和使用
公开(公告)号：US5141736A
公开(公告)日：1992-08-25
申请号：US457343
申请日：1989-12-27
申请人： Susumu Iwasa , Kaori Harada , Yukio Toyoda
发明人： Susumu Iwasa , Kaori Harada , Yukio Toyoda
IPC分类号： A61K31/535 , A61K38/00 , A61K47/48 , C07K16/14 , C07K16/30 , C07K16/44 , C07K16/46 , C12P21/08
CPC分类号： A61K47/48384 , A61K31/535 , A61K47/48607 , A61K47/48676 , C07K16/14 , C07K16/3038 , C07K16/44 , C07K16/468 , A61K38/00 , Y10S435/972
摘要： The present invention discloses, a bispecific monoclonal antibody to an ansamitocin derivative and a target antigen, particularly tumor-associated antigen, which can carry an anasamitocin derivative in a stable and inactive form at other sites than the target and release the active-form ansamitocin derivative at the target site, so that an anticancer agent having excellent durability and selectivity with little adverse action can be prepared using the bispecific monoclonal antibody and ansamitocin derivatives.
摘要翻译：本发明公开了一种针对安沙霉素衍生物的双特异性单克隆抗体和靶抗原，特别是肿瘤相关抗原，其可以在比目标的其他位置携带稳定和无活性形式的阿沙米星衍生物，并释放活性形式的安曲霉素衍生物在目标部位，可以使用双特异性单克隆抗体和安曲霉素衍生物制备具有优异的耐久性和选择性，几乎没有不利作用的抗癌剂。

6. 发明授权

US4476620A Method of making a gallium nitride light-emitting diode 失效
标题翻译：制造氮化镓发光二极管的方法
公开(公告)号：US4476620A
公开(公告)日：1984-10-16
申请号：US480794
申请日：1983-03-31
申请人： Yoshimasa Ohki , Yukio Toyoda , Hiroyuki Kobayashi , Isamu Akasaki
发明人： Yoshimasa Ohki , Yukio Toyoda , Hiroyuki Kobayashi , Isamu Akasaki
IPC分类号： H01L33/02 , H01L33/18 , H01L33/38 , H01L33/62 , H01L21/20 , H01L33/00
CPC分类号： H01L33/025 , H01L33/18 , H01L2224/48091 , H01L2924/12041 , H01L2933/0016 , H01L33/38 , H01L33/62 , Y10S438/964 , Y10S438/969
摘要： The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
摘要翻译：氮化镓发光二极管的基板在其表面上的给定位置处被制成粗糙的，或者在生长n型导电氮化镓层和半导体基板之前，在基板的表面上附着绝缘膜带状图案，绝缘氮化镓层。结果，在半绝缘层中在与粗糙表面或绝缘膜条带图案相对应的位置处形成高导电率区域，使得每个高导电率区域从n型导电层延伸到上部半绝缘层的表面，以作为与电极连接的导体。以相同的方式，在二极管晶片中沿着切口部分形成类似的高导电区域，从而防止每个二极管芯片在切割时受损。

7. 发明授权

US4473938A Method for making a GaN electroluminescent semiconductor device utilizing epitaxial deposition 失效
标题翻译：利用外延沉积制造GaN电致发光半导体器件的方法
公开(公告)号：US4473938A
公开(公告)日：1984-10-02
申请号：US484374
申请日：1983-04-12
申请人： Hiroyuki Kobayashi , Yoshimasa Ohki , Yukio Toyoda , Isamu Akasaki
发明人： Hiroyuki Kobayashi , Yoshimasa Ohki , Yukio Toyoda , Isamu Akasaki
IPC分类号： H01L21/205 , H01L21/86 , H01L33/32 , H01L33/40 , H01L21/20 , H01L21/285
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L33/0008 , H01L33/007 , Y10S117/913
摘要： An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.
摘要翻译：一种电致发光半导体器件，包括依次外延沉积在热处理蓝宝石衬底的表面上的导电和阻性结晶氮化镓（GaN）的主体，以及外延沉积在电阻体上的绝缘晶体氮化镓体。

8. 发明授权

US4454021A Method for thermal cracking of hydrocarbons in an apparatus of an alloy having alkali or alkaline earth metals in the alloy to minimize coke deposition 失效
标题翻译：在合金中具有碱金属或碱土金属的合金的装置中烃的热裂解方法，用于使焦炭沉积最小化
公开(公告)号：US4454021A
公开(公告)日：1984-06-12
申请号：US331782
申请日：1981-12-17
申请人： Yoji Watanabe , Toshio Morimura , Yukio Toyoda
发明人： Yoji Watanabe , Toshio Morimura , Yukio Toyoda
IPC分类号： C10G9/12 , C10G9/16
CPC分类号： C10G9/12 , C10G9/16 , Y10S585/95
摘要： In the thermal cracking of or heating of hydrocarbons, for example naphtha, a carbonization reaction incidentally takes place due to the fact that Ni, Fe and Co contained in, for example, the conduits of the thermal cracking apparatus have a catalytically carbonizing action. The aim of the present invention is to effectively suppress carbon deposition promoted by these elements, to provide for the incorporation of an inhibitor element, e.g. Li, Na, Ba, Be, Ca, Mg or their oxides, into the heat-resistant alloy, and to form on the surface of this alloy a carbon deposition suppressing layer which comprises an inhibitor element.
摘要翻译：在碳氢化合物的热裂解或加热例如石脑油中，由于例如热裂解装置的管道中所含的Ni，Fe和Co具有催化碳化作用，偶然发生碳化反应。本发明的目的是有效地抑制由这些元素促进的碳沉积，以提供抑制剂元素的掺入，例如， Li，Na，Ba，Be，Ca，Mg或它们的氧化物加入到耐热合金中，并在该合金的表面上形成含有抑制剂元素的碳沉积抑制层。

9. 发明授权

US5397740A Method of making an optical semiconductor device 失效
标题翻译：制造光半导体器件的方法
公开(公告)号：US5397740A
公开(公告)日：1995-03-14
申请号：US213456
申请日：1994-03-14
申请人： Yukio Toyoda , Shinichi Wakabayashi , Hitomaro Tougou
发明人： Yukio Toyoda , Shinichi Wakabayashi , Hitomaro Tougou
IPC分类号： H01S5/00 , H01L33/30 , H01S5/062 , H01L21/20
CPC分类号： H01L33/30 , H01S5/06206 , Y10S148/095 , Y10S438/956
摘要： First and second junctions are set so as to control electric fields applied to an active layer, independent from each other, and the electric field applied by the first junction controls exciting conditions while the electric field applied by the second junction drives the active layer so as to simplify a drive circuit for an optical semiconductor device.
摘要翻译：设置第一和第二结以控制施加到有源层的彼此独立的电场，并且由第一结施加的电场控制激励条件，同时由第二结施加的电场驱动有源层，以便以简化光半导体器件的驱动电路。

10. 发明授权

US5217713A Cytotoxic bispecific monoclonal antibody, its production and use 失效
标题翻译：细胞毒性双特异性单克隆抗体，其生产和使用
公开(公告)号：US5217713A
公开(公告)日：1993-06-08
申请号：US842426
申请日：1992-02-27
申请人： Susumu Iwasa , Kaori Harada , Yukio Toyoda
发明人： Susumu Iwasa , Kaori Harada , Yukio Toyoda
IPC分类号： A61K31/535 , A61K38/00 , A61K47/48 , C07K16/14 , C07K16/30 , C07K16/44 , C07K16/46
CPC分类号： A61K47/48384 , A61K31/535 , A61K47/48607 , A61K47/48676 , C07K16/14 , C07K16/3038 , C07K16/44 , C07K16/468 , A61K38/00
摘要： The present invention discloses, a bispecific monoclonal antibody to an ansamitocin derivative and a target antigen, particularly tumor-associated antigen, which can carry an ansamitocin derivative in a stable and inactive form at other sites than the target and release the active-form ansamitocin derivative at the target site, so that an anticancer agent having excellent durability and selectivity with little adverse action can be prepared using the bispecific monoclonal antibody and ansamitocin derivatives.
摘要翻译：本发明公开了一种针对安沙霉素衍生物的双特异性单克隆抗体和靶抗原，特别是肿瘤相关抗原，其可以在比目标的其他位置携带稳定和无活性形式的安曲霉素衍生物，并释放活性形式的安曲霉素衍生物在目标部位，可以使用双特异性单克隆抗体和安曲霉素衍生物制备具有优异的耐久性和选择性，几乎没有不利作用的抗癌剂。

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