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1. 发明授权

US08828794B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08828794B2
公开(公告)日：2014-09-09
申请号：US13413684
申请日：2012-03-07
申请人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama , Junichi Koezuka
发明人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama , Junichi Koezuka
IPC分类号： H01L21/42 , H01L21/84 , H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： H01L21/40 , H01L21/02175 , H01L21/02252 , H01L21/02565 , H01L21/02636 , H01L21/02664 , H01L21/324 , H01L21/383 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
摘要翻译：在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

2. 发明申请

US20120252173A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120252173A1
公开(公告)日：2012-10-04
申请号：US13424681
申请日：2012-03-20
申请人： Yuki IMOTO , Yuhei SATO
发明人： Yuki IMOTO , Yuhei SATO
IPC分类号： H01L21/36 , H01L21/283
CPC分类号： H01L29/66969 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/02658 , H01L29/513 , H01L29/517 , H01L29/7869
摘要： The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.
摘要翻译：减少氧化物半导体膜中含有的水和氢的量，并且从底膜向氧化物半导体膜充分地供给氧以减少氧缺乏。形成堆叠的基膜，进行第一热处理，在层叠的基膜上形成氧化物半导体膜，并且与层叠的基膜接触，进行第二热处理。在层叠基膜中，依次层叠第一基膜和第二基膜。第一基膜是通过加热而释放氧的绝缘氧化膜。第二基膜是绝缘金属氧化物膜。第二基膜的氧扩散系数小于第一基膜的氧扩散系数。

3. 发明申请

US20120231581A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120231581A1
公开(公告)日：2012-09-13
申请号：US13413686
申请日：2012-03-07
申请人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
发明人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
IPC分类号： H01L21/36
CPC分类号： H01L29/78693
摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.
摘要翻译：在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于形成氧化物半导体层。

4. 发明申请

US20120153275A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120153275A1
公开(公告)日：2012-06-21
申请号：US13316604
申请日：2011-12-12
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
摘要翻译：制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。使用包含其组成被控制的氧化钨膜的栅电极。通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

5. 发明授权

US09960278B2 Manufacturing method of semiconductor device 有权
公开(公告)号：US09960278B2
公开(公告)日：2018-05-01
申请号：US13437271
申请日：2012-04-02
申请人： Yuhei Sato , Keiji Sato , Toshinari Sasaki , Tetsunori Maruyama , Atsuo Isobe , Tsutomu Murakawa , Sachiaki Tezuka
发明人： Yuhei Sato , Keiji Sato , Toshinari Sasaki , Tetsunori Maruyama , Atsuo Isobe , Tsutomu Murakawa , Sachiaki Tezuka
IPC分类号： H01L29/786 , H01L29/66 , H01L27/32 , H01L21/477
CPC分类号： H01L29/7869 , H01L21/477
摘要： To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

6. 发明授权

US08927329B2 Method for manufacturing oxide semiconductor device with improved electronic properties 有权
标题翻译：具有改进的电子性能的氧化物半导体器件的制造方法
公开(公告)号：US08927329B2
公开(公告)日：2015-01-06
申请号：US13424681
申请日：2012-03-20
申请人： Yuki Imoto , Yuhei Sato
发明人： Yuki Imoto , Yuhei Sato
IPC分类号： H01L21/00 , H01L21/02 , H01L29/786 , H01L29/51
CPC分类号： H01L29/66969 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/02658 , H01L29/513 , H01L29/517 , H01L29/7869
摘要： The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.
摘要翻译：减少氧化物半导体膜中含有的水和氢的量，并且从底膜向氧化物半导体膜充分地供给氧以减少氧缺乏。形成堆叠的基膜，进行第一热处理，在层叠的基膜上形成氧化物半导体膜，并且与层叠的基膜接触，进行第二热处理。在层叠基膜中，依次层叠第一基膜和第二基膜。第一基膜是通过加热而释放氧的绝缘氧化膜。第二基膜是绝缘金属氧化物膜。第二基膜的氧扩散系数小于第一基膜的氧扩散系数。

7. 发明授权

US08753928B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08753928B2
公开(公告)日：2014-06-17
申请号：US13413686
申请日：2012-03-07
申请人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78693
摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.
摘要翻译：在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于形成氧化物半导体层。

8. 发明授权

US08709922B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08709922B2
公开(公告)日：2014-04-29
申请号：US13448611
申请日：2012-04-17
申请人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
发明人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
摘要翻译：提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域和设置在所述非晶氧化物半导体层上的氧化铝膜。无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理在低于或等于450℃的温度下

9. 发明申请

US20120231580A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120231580A1
公开(公告)日：2012-09-13
申请号：US13413684
申请日：2012-03-07
申请人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA , Junichi KOEZUKA
发明人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA , Junichi KOEZUKA
IPC分类号： H01L21/42
CPC分类号： H01L21/40 , H01L21/02175 , H01L21/02252 , H01L21/02565 , H01L21/02636 , H01L21/02664 , H01L21/324 , H01L21/383 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
摘要翻译：在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

10. 发明授权

US09117920B2 Method for manufacturing semiconductor device using oxide semiconductor 有权
标题翻译：使用氧化物半导体的半导体器件的制造方法
公开(公告)号：US09117920B2
公开(公告)日：2015-08-25
申请号：US13467493
申请日：2012-05-09
申请人： Junichi Koezuka , Yuhei Sato , Shunpei Yamazaki
发明人： Junichi Koezuka , Yuhei Sato , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L29/786
CPC分类号： H01L29/78693
摘要： Stable electrical characteristics and high reliability are provided to a semiconductor device including an oxide semiconductor. In a process of manufacturing a transistor including an oxide semiconductor film, an amorphous oxide semiconductor film is formed, and oxygen is added to the amorphous oxide semiconductor film, so that an amorphous oxide semiconductor film containing excess oxygen is formed. Then, an aluminum oxide film is formed over the amorphous oxide semiconductor film, and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that a crystalline oxide semiconductor film is formed.
摘要翻译：将稳定的电特性和高可靠性提供给包括氧化物半导体的半导体器件。在制造包括氧化物半导体膜的晶体管的工艺中，形成非晶氧化物半导体膜，并且向非晶氧化物半导体膜添加氧，从而形成含有过量氧的非晶氧化物半导体膜。然后，在无定形氧化物半导体膜上形成氧化铝膜，并对其进行热处理，使非晶氧化物半导体膜的至少一部分结晶，形成结晶性氧化物半导体膜。

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