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1. 发明授权

US08709922B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08709922B2
公开(公告)日：2014-04-29
申请号：US13448611
申请日：2012-04-17
申请人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
发明人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
摘要翻译：提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域和设置在所述非晶氧化物半导体层上的氧化铝膜。无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理在低于或等于450℃的温度下

2. 发明申请

US20120319100A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319100A1
公开(公告)日：2012-12-20
申请号：US13483078
申请日：2012-05-30
申请人： Kyoko YOSHIOKA , Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shinya SASAGAWA
发明人： Kyoko YOSHIOKA , Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Shinya SASAGAWA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L21/324 , H01L29/66969
摘要： A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.
摘要翻译：提供抑制功耗增加的小型化半导体装置及其制造方法。提供了一种具有稳定电特性的高度可靠的半导体器件及其半导体器件的制造方法。为了降低氧化物半导体膜的表面的平均表面粗糙度，用电场加速的离子照射氧化物半导体膜。因此，可以抑制晶体管的漏电流和功耗的增加。此外，通过进行热处理使得氧化物半导体膜包括具有与氧化物半导体膜的表面基本垂直的c轴的晶体，由于可见光或紫外线的照射而导致的氧化物半导体膜的电特性的变化可以抑制。

3. 发明授权

US09299852B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09299852B2
公开(公告)日：2016-03-29
申请号：US13483078
申请日：2012-05-30
申请人： Kyoko Yoshioka , Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shinya Sasagawa
发明人： Kyoko Yoshioka , Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shinya Sasagawa
IPC分类号： H01L21/00 , H01L29/786 , H01L21/324 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/324 , H01L29/66969
摘要： A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.
摘要翻译：提供抑制功耗增加的小型化半导体装置及其制造方法。提供了一种具有稳定电特性的高度可靠的半导体器件及其半导体器件的制造方法。为了降低氧化物半导体膜的表面的平均表面粗糙度，用电场加速的离子照射氧化物半导体膜。因此，可以抑制晶体管的漏电流和功耗的增加。此外，通过进行热处理使得氧化物半导体膜包括具有与氧化物半导体膜的表面基本垂直的c轴的晶体，由于可见光或紫外线的照射而导致的氧化物半导体膜的电特性的变化可以抑制。

4. 发明申请

US20120280234A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120280234A1
公开(公告)日：2012-11-08
申请号：US13448611
申请日：2012-04-17
申请人： Junichi KOEZUKA , Naoto YAMADE , Kyoko YOSHIOKA , Yuhei SATO , Mari TERASHIMA
发明人： Junichi KOEZUKA , Naoto YAMADE , Kyoko YOSHIOKA , Yuhei SATO , Mari TERASHIMA
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
摘要翻译：提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域，以及设置在所述非晶氧化物半导体层上的氧化铝膜。无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理在低于或等于450℃的温度下

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