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1. 发明授权

US09171938B2 Semiconductor element and method for manufacturing the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US09171938B2
公开(公告)日：2015-10-27
申请号：US12888835
申请日：2010-09-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
发明人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
IPC分类号： H01L21/02 , H01L29/66 , H01L27/12 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.
摘要翻译：目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

2. 发明授权

US09136141B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US09136141B2
公开(公告)日：2015-09-15
申请号：US13192498
申请日：2011-07-28
申请人： Junichi Koezuka
发明人： Junichi Koezuka
IPC分类号： H01L21/762 , H01L21/324 , H01L21/84
CPC分类号： H01L21/324 , H01L21/76254 , H01L21/84
摘要： A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate. In particular, the amount of hydrogen contained in the cap film formed over the semiconductor substrate is preferably greater than or equal to the irradiation amount of hydrogen ions.
摘要翻译：可以在半导体衬底上形成能够防止氢从脆化区域扩散并向脆化区域和半导体衬底表面之间的区域供给氢的盖膜，半导体层从半导体衬底转移到基底基质。特别地，形成在半导体衬底上的盖膜中所含的氢的量优选大于或等于氢离子的照射量。

3. 发明授权

US08927982B2 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device 有权
标题翻译：氧化物半导体膜，半导体器件以及半导体器件的制造方法
公开(公告)号：US08927982B2
公开(公告)日：2015-01-06
申请号：US13415080
申请日：2012-03-08
申请人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/78618 , G02F1/136204 , G02F1/136213 , G02F1/136286 , G02F1/1368 , H01L21/02565 , H01L21/0259 , H01L21/265 , H01L27/1052 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
摘要翻译：通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

4. 发明授权

US08916867B2 Oxide semiconductor element and semiconductor device 有权
标题翻译：氧化物半导体元件和半导体器件
公开(公告)号：US08916867B2
公开(公告)日：2014-12-23
申请号：US13353597
申请日：2012-01-19
申请人： Junichi Koezuka
发明人： Junichi Koezuka
IPC分类号： H01L29/10 , H01L29/12 , H01L29/66 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66742 , H01L29/66969 , H01L29/78693 , H01L29/78696
摘要： A semiconductor element having high mobility, which includes an oxide semiconductor layer having crystallinity, is provided. The oxide semiconductor layer includes a stacked-layer structure of a first oxide semiconductor film and a second oxide semiconductor film having a wider band gap than the first oxide semiconductor film, which is in contact with the first oxide semiconductor film. Thus, a channel region is formed in part of the first oxide semiconductor film (that is, in an oxide semiconductor film having a smaller band gap) which is in the vicinity of an interface with the second oxide semiconductor film. Further, dangling bonds in the first oxide semiconductor film and the second oxide semiconductor film are bonded to each other at the interface therebetween. Accordingly, a decrease in mobility resulting from an electron trap or the like due to dangling bonds can be reduced in the channel region.
摘要翻译：提供了具有高迁移率的半导体元件，其包括具有结晶性的氧化物半导体层。氧化物半导体层包括与第一氧化物半导体膜接触的具有比第一氧化物半导体膜更宽的带隙的第一氧化物半导体膜和第二氧化物半导体膜的层叠结构。因此，在与第二氧化物半导体膜的界面附近的第一氧化物半导体膜（即具有较小带隙的氧化物半导体膜）的一部分中形成沟道区。此外，第一氧化物半导体膜和第二氧化物半导体膜中的悬挂键在它们之间的界面处彼此结合。因此，在通道区域中可以减少由于悬挂键导致的电子阱等导致的迁移率的降低。

5. 发明授权

US08859330B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08859330B2
公开(公告)日：2014-10-14
申请号：US13419468
申请日：2012-03-14
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
IPC分类号： H01L21/00 , H01L21/425 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L21/425 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.
摘要翻译：提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

6. 发明授权

US08847233B2 Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film 有权
标题翻译：具有涂覆有氧化物半导体膜的沟槽绝缘层的半导体器件
公开(公告)号：US08847233B2
公开(公告)日：2014-09-30
申请号：US13463092
申请日：2012-05-03
申请人： Atsuo Isobe , Toshinari Sasaki , Junichi Koezuka , Shunpei Yamazaki
发明人： Atsuo Isobe , Toshinari Sasaki , Junichi Koezuka , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/01 , H01L27/12 , H01L31/0392 , H01L27/108 , H01L21/84 , H01L49/02 , H01L21/425 , H01L29/66 , H01L29/786 , H01L27/115
CPC分类号： H01L29/4238 , H01L21/02565 , H01L21/265 , H01L21/425 , H01L21/84 , H01L27/1085 , H01L27/10876 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L28/40 , H01L29/045 , H01L29/0847 , H01L29/66477 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78693
摘要： It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.
摘要翻译：本发明的目的是提供一种抑制短路效应并实现小型化的半导体器件及其制造方法。在绝缘层中形成沟槽，并且将杂质添加到与沟槽的上端角部接触的氧化物半导体膜，由此形成源极区域和漏极区域。利用上述结构，可以实现小型化。此外，利用沟槽，即使当源电极层和漏电极层之间的距离缩短时，也可以适当地抑制沟槽的深度适当地设定短沟道效应。

7. 发明申请

US20140139775A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20140139775A1
公开(公告)日：2014-05-22
申请号：US14077390
申请日：2013-11-12
申请人： Hiroyuki MIYAKE , Shunpei YAMAZAKI , Yoshifumi TANADA , Manabu SATO , Toshinari SASAKI , Kenichi OKAZAKI , Junichi KOEZUKA , Takuya MATSUO , Hiroshi MATSUKIZONO , Yosuke KANZAKI , Shigeyasu MORI
发明人： Hiroyuki MIYAKE , Shunpei YAMAZAKI , Yoshifumi TANADA , Manabu SATO , Toshinari SASAKI , Kenichi OKAZAKI , Junichi KOEZUKA , Takuya MATSUO , Hiroshi MATSUKIZONO , Yosuke KANZAKI , Shigeyasu MORI
IPC分类号： G02F1/1368 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/78648
摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.
摘要翻译：半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

8. 发明授权

US08716073B2 Method for processing oxide semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：氧化物半导体膜的制造方法及半导体装置的制造方法
公开(公告)号：US08716073B2
公开(公告)日：2014-05-06
申请号：US13547451
申请日：2012-07-12
申请人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
发明人： Shunpei Yamazaki , Shinji Ohno , Yuichi Sato , Junichi Koezuka , Sachiaki Tezuka
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L27/1225
摘要： To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.
摘要翻译：提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。提供可以高速执行的包括氧化物半导体膜的晶体管。提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。在氧化物半导体膜上形成具有还原性的膜。接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

9. 发明授权

US08629030B2 Method for manufacturing SOI substrate 有权
公开(公告)号：US08629030B2
公开(公告)日：2014-01-14
申请号：US13411864
申请日：2012-03-05
申请人： Takeshi Shichi , Junichi Koezuka , Hideto Ohnuma , Shunpei Yamazaki
发明人： Takeshi Shichi , Junichi Koezuka , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/33 , H01L21/8222
摘要： The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween.

10. 发明申请

US20130062600A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130062600A1
公开(公告)日：2013-03-14
申请号：US13604937
申请日：2012-09-06
申请人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Sachiaki TEZUKA , Tomokazu YOKOI , Yusuke SHINO
发明人： Junichi KOEZUKA , Shinji OHNO , Yuichi SATO , Sachiaki TEZUKA , Tomokazu YOKOI , Yusuke SHINO
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/242 , H01L21/02565 , H01L21/0262 , H01L21/02639 , H01L21/84 , H01L27/10873 , H01L27/1156 , H01L27/1203 , H01L29/04 , H01L29/66757 , H01L29/7869
摘要： The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.
摘要翻译：氧化物半导体膜与金属膜之间的接触电阻降低。提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。提供能够进行高速运转的半导体装置。在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。形成与氧氮化物区域接触的金属膜。氧氮化物区域的电阻比氧化物半导体膜的其他区域低。此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

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