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1. 发明申请

US20130140269A1 METHOD AND MECHANISM OF PHOTORESIST LAYER STRUCTURE USED IN MANUFACTURING NANO SCALE PATTERNS 审中-公开
标题翻译：用于制造纳米尺度图案的光刻胶层结构的方法与机理
公开(公告)号：US20130140269A1
公开(公告)日：2013-06-06
申请号：US13413229
申请日：2012-03-06
申请人： Donyau Chiang , Chun-Ming Chang , Yu-Hsin Lin , Chin-Tien Yang , Chung-Ta Cheng
发明人： Donyau Chiang , Chun-Ming Chang , Yu-Hsin Lin , Chin-Tien Yang , Chung-Ta Cheng
IPC分类号： B29C59/14 , C23F1/00 , B82Y40/00
CPC分类号： G03F7/095 , B82Y10/00 , B82Y40/00 , G03F7/0043 , G03F7/09 , H01L21/3081 , H01L2933/0091
摘要： A method and a mechanism for nano scale patterns with high aspect ratios etched on both photoresist layers and a carrier substrate and uses two complementary photoresist layers as an etch mask and the laser direct-write lithography technology to quickly fabricate large-size & nano scale patterns features (1) inorganic photoresist as material of a first layer of photoresist for nano scale patterns defined by laser beam direct-write lithography and (2) polymeric organic photoresist as material of a second layer of photoresist to thicken an etch mask because of effect of oxygen plasma, which has a higher etching rate on a polymeric organic photoresist layer but a lower one on an inorganic photoresist layer. For various materials of carrier substrates applied to the present invention, there are several types of Inductively Coupled Plasma-Reactive Ion Etching technologies available for nano scale patterns continuously transferred to a carrier substrate.
摘要翻译：在两个光致抗蚀剂层和载体衬底上蚀刻具有高纵横比的纳米尺度图案的方法和机构，并且使用两个互补光刻胶层作为蚀刻掩模和激光直写光刻技术来快速制造大尺寸＆纳米尺度图案特征（1）无机光致抗蚀剂作为用于由激光束直写光刻术限定的纳米尺度图案的第一层光致抗蚀剂的材料，以及（2）聚合物有机光致抗蚀剂作为第二层光致抗蚀剂的材料，以增加蚀刻掩模，由于氧等离子体，其在聚合有机光致抗蚀剂层上具有较高的蚀刻速率，但在无机光致抗蚀剂层上具有较低的蚀刻速率。对于应用于本发明的载体基板的各种材料，存在可用于连续转移到载体衬底的纳米尺度图案的几种类型的电感耦合等离子体 - 反应离子蚀刻技术。

2. 发明申请

US20120199849A1 METHOD OF FABRICATION OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：金属氧化物半导体场效应晶体管的制备方法
公开(公告)号：US20120199849A1
公开(公告)日：2012-08-09
申请号：US13446124
申请日：2012-04-13
申请人： Chen-Hua Tsai , Bang-Chiang Lan , Yu-Hsin Lin , Yi-Cheng Liu , Cheng-Tzung Tsai
发明人： Chen-Hua Tsai , Bang-Chiang Lan , Yu-Hsin Lin , Yi-Cheng Liu , Cheng-Tzung Tsai
IPC分类号： H01L29/161 , H01L29/772
CPC分类号： H01L29/7848 , H01L21/823807 , H01L29/6656 , H01L29/66636 , H01L29/7834 , Y10S438/931 , Y10S438/933 , Y10S438/938
摘要： A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.
摘要翻译：制造金属氧化物半导体场效应晶体管的方法包括首先提供其上形成有栅极结构的衬底。之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹槽。另外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。另外，源极/漏极层沉积在第二凹部中。由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。

3. 发明授权

US08149047B2 Bandgap reference circuit with low operating voltage 有权
标题翻译：带隙参考电路，工作电压低
公开(公告)号：US08149047B2
公开(公告)日：2012-04-03
申请号：US12051989
申请日：2008-03-20
申请人： Hung-Chieh Tsai , Yu-Hsin Lin
发明人： Hung-Chieh Tsai , Yu-Hsin Lin
IPC分类号： G05F3/02
CPC分类号： H03F3/45183 , G05F3/30 , H03F3/345 , H03F2200/456
摘要： A bandgap reference circuit comprising a current mirror, an operational amplifier, first and second BJT transistors is disclosed. The current mirror comprises a first input terminal, a second input terminal and at least one output terminal. The operational amplifier is coupled to the current mirror, wherein a first transistor and a second transistor respectively coupled to the first and the second input terminals have a zero or near zero threshold voltage. The first and second BJT transistors are coupled to two input terminals of the operational amplifier respectively, wherein at least one of the first and second BJT transistors is coupled to the output terminal of the current mirror through a conductive path.
摘要翻译：公开了一种带隙参考电路，其包括电流镜，运算放大器，第一和第二BJT晶体管。电流镜包括第一输入端，第二输入端和至少一个输出端。运算放大器耦合到电流镜，其中分别耦合到第一和第二输入端的第一晶体管和第二晶体管具有零或接近零的阈值电压。第一和第二BJT晶体管分别耦合到运算放大器的两个输入端，其中第一和第二BJT晶体管中的至少一个通过导电路径耦合到电流镜的输出端。

4. 发明授权

US08050681B2 System and method for controlling connections between a wireless router and unlicensed mobile access capable mobile phones 有权
标题翻译：用于控制无线路由器和未许可移动接入能力的移动电话之间的连接的系统和方法
公开(公告)号：US08050681B2
公开(公告)日：2011-11-01
申请号：US12417601
申请日：2009-04-02
申请人： Han-Tzung Lin , Yu-Hsin Lin
发明人： Han-Tzung Lin , Yu-Hsin Lin
IPC分类号： H04W36/00
CPC分类号： H04L29/12028 , H04L61/103 , H04W8/26 , H04W84/12
摘要： A system for controlling connections between a wireless router and unlicensed mobile access capable mobile phones is provided. The system acquires and stores a media access control address and an Internet protocol address of each mobile phone in an address list. The system periodically checks whether each Internet protocol address recorded in an address resolution protocol cache table of the wireless router matches a corresponding media access control address recorded in the cache table. If the Internet protocol address does not match the corresponding media access control address in the cache table, the system further looks up a media access control address corresponding to the Internet protocol address, and sends an address resolution protocol unicast request to a mobile phone having the media access control address.
摘要翻译：提供了一种用于控制无线路由器和未许可移动接入移动接入移动电话之间的连接的系统。系统在地址列表中获取并存储每个移动电话的媒体访问控制地址和互联网协议地址。系统定期检查记录在无线路由器的地址解析协议高速缓存表中的每个因特网协议地址是否与记录在高速缓存表中的对应的媒体访问控制地址相匹配。如果互联网协议地址与缓存表中的相应媒体访问控制地址不匹配，则系统进一步查找对应于因特网协议地址的媒体访问控制地址，并向具有该协议地址的移动电话发送地址解析协议单播请求媒体访问控制地址。

5. 发明授权

US07956680B2 Low-noise DC offset calibration circuit and related receiver stage 有权
标题翻译：低噪声直流偏移校准电路及相关接收器级
公开(公告)号：US07956680B2
公开(公告)日：2011-06-07
申请号：US12767812
申请日：2010-04-27
申请人： Chi-Lun Lo , Yu-Hsin Lin
发明人： Chi-Lun Lo , Yu-Hsin Lin
IPC分类号： H03F1/02
CPC分类号： H04B1/30
摘要： A DC offset calibration circuit has a first resistor, a first switch, a second resistor, and a second switch. The first resistor is coupled to a first supply voltage. The first switch is coupled to the first resistor, to a first input of an amplifier, and to a first input resistor. A second end of the first input resistor is not coupled to the first supply voltage. The second resistor is coupled to a second supply voltage. The second switch is coupled to the second resistor, to a second input of the amplifier, and to a first end of a second input resistor. A second end of the second input resistor is not coupled to the second supply voltage.
摘要翻译： DC偏移校准电路具有第一电阻器，第一开关，第二电阻器和第二开关。第一电阻器耦合到第一电源电压。第一开关耦合到第一电阻器，耦合到放大器的第一输入端和第一输入电阻器。第一输入电阻器的第二端不耦合到第一电源电压。第二电阻耦合到第二电源电压。第二开关耦合到第二电阻器，耦合到放大器的第二输入端和第二输入电阻器的第一端。第二输入电阻器的第二端不耦合到第二电源电压。

6. 发明授权

US07803748B2 Nanoparticles for protein drug delivery 有权
标题翻译：用于蛋白质药物递送的纳米颗粒
公开(公告)号：US07803748B2
公开(公告)日：2010-09-28
申请号：US11881217
申请日：2007-07-26
申请人： Hsing-Wen Sung , Yu-Hsin Lin , Hsiang-Fa Liang , Hosheng Tu
发明人： Hsing-Wen Sung , Yu-Hsin Lin , Hsiang-Fa Liang , Hosheng Tu
IPC分类号： A61K38/00 , A61K31/722
CPC分类号： A61K9/5146 , A61K9/0019 , A61K9/5161 , A61K9/5192 , A61K31/13 , A61K31/473 , A61K31/55 , A61K31/7008 , A61K31/704 , A61K31/727 , A61K33/24 , A61K38/28 , A61K45/06 , A61K47/61 , Y10S977/773 , A61K2300/00
摘要： The invention discloses the nanoparticles composed of chitosan, poly-γ-glutamic acid, and at least one bioactive agent characterized with a positive surface charge and their enhanced permeability for paracellular drug delivery.
摘要翻译：本发明公开了由壳聚糖，聚-γ-谷氨酸和至少一种生物活性剂组成的纳米颗粒，其特征在于具有阳性表面电荷和增强细胞旁药物递送的渗透性。

7. 发明申请

US20100201423A1 Low-noise DC Offset Calibration Circuit and Related Receiver Stage 有权
标题翻译：低噪声直流偏移校准电路和相关接收器级
公开(公告)号：US20100201423A1
公开(公告)日：2010-08-12
申请号：US12767812
申请日：2010-04-27
申请人： Chi-Lun Lo , Yu-Hsin Lin
发明人： Chi-Lun Lo , Yu-Hsin Lin
IPC分类号： H03L5/00
CPC分类号： H04B1/30
摘要： A DC offset calibration circuit has a first resistor, a first switch, a second resistor, and a second switch. The first resistor is coupled to a first supply voltage. The first switch is coupled to the first resistor, to a first input of an amplifier, and to a first input resistor. A second end of the first input resistor is not coupled to the first supply voltage. The second resistor is coupled to a second supply voltage. The second switch is coupled to the second resistor, to a second input of the amplifier, and to a first end of a second input resistor. A second end of the second input resistor is not coupled to the second supply voltage.
摘要翻译： DC偏移校准电路具有第一电阻器，第一开关，第二电阻器和第二开关。第一电阻器耦合到第一电源电压。第一开关耦合到第一电阻器，耦合到放大器的第一输入端和第一输入电阻器。第一输入电阻器的第二端不耦合到第一电源电压。第二电阻耦合到第二电源电压。第二开关耦合到第二电阻器，耦合到放大器的第二输入端和第二输入电阻器的第一端。第二输入电阻器的第二端不耦合到第二电源电压。

8. 发明授权

US07737790B1 Cascode amplifier and method for controlling current of cascode amplifier 有权
标题翻译：串级放大器和共源共栅放大器电流控制方法
公开(公告)号：US07737790B1
公开(公告)日：2010-06-15
申请号：US12421615
申请日：2009-04-09
申请人： Yen-Horng Chen , Yu-Hsin Lin
发明人： Yen-Horng Chen , Yu-Hsin Lin
IPC分类号： H03F3/04
CPC分类号： H03F1/223
摘要： A cascode amplifier includes a first transistor, a second transistor, a third transistor, a fourth transistor and a bias circuit. Each of the transistors has a gate electrode, a first electrode and a second electrode, a first electrode of the first transistor is coupled to a second electrode of the second transistor, a first electrode of the third transistor is coupled to a second electrode of the fourth transistor, and gate electrodes of the third and the fourth transistors are coupled to gate electrodes of the first and the second transistors, respectively. The bias circuit is coupled to the first electrode of the fourth transistor, and is used for biasing a voltage level at the first electrode of the fourth transistor to make the second and the fourth transistors operate in a same region.
摘要翻译：级联放大器包括第一晶体管，第二晶体管，第三晶体管，第四晶体管和偏置电路。每个晶体管具有栅电极，第一电极和第二电极，第一晶体管的第一电极耦合到第二晶体管的第二电极，第三晶体管的第一电极耦合到第二晶体管的第二电极第四晶体管和第三和第四晶体管的栅电极分别耦合到第一和第二晶体管的栅电极。偏置电路耦合到第四晶体管的第一电极，并且用于偏置第四晶体管的第一电极处的电压电平，以使第二和第四晶体管在相同的区域中工作。

9. 发明申请

US20100112979A1 WIRELESS ACCESS DEVICE AND PAIRING METHOD 审中-公开
标题翻译：无线接入设备及配对方法
公开(公告)号：US20100112979A1
公开(公告)日：2010-05-06
申请号：US12429173
申请日：2009-04-23
申请人： Chien-Hua Chen , Yu-Hsin Lin
发明人： Chien-Hua Chen , Yu-Hsin Lin
IPC分类号： H04M3/16
CPC分类号： H04L63/0428 , H04W12/003 , H04W12/00504 , H04W12/02 , H04W84/02 , H04W92/10
摘要： A wireless access device for pairing with a wireless communication device by a plurality of signal lamps. The wireless access device stores a lamp-code mapping table including a plurality of lamp states and corresponding pairing codes to the plurality of the lamp states, turns off an encryption mechanism of the wireless access device, randomly selects one lamp state from the lamp-code mapping table, controls states of the plurality of signal lamps according the selected lamp state, receives a pairing request from the wireless communication device, obtains a pairing code from the pairing request, pairs with the wireless communication device when the obtained pairing code matches the pairing code corresponding to the selected lamp state, and rejects pairing with the wireless communication device if the obtained pairing code does not match the pairing code corresponding to the selected lamp state. A pairing method is also provided.
摘要翻译：一种用于通过多个信号灯与无线通信设备进行配对的无线接入设备。无线接入装置将包括多个灯状态的灯代码映射表和对应的配对码存储到多个灯状态，关闭无线接入装置的加密机制，从灯码随机选择一个灯状态映射表，根据所选择的灯状态控制多个信号灯的状态，从无线通信设备接收配对请求，从配对请求获得配对码，当获得的配对码与配对码匹配时，与无线通信设备配对如果所获得的配对码与对应于所选择的灯状态的配对码不匹配，则拒绝与无线通信设备的配对。还提供了配对方法。

10. 发明申请

US20100001792A1 Low-noise DC Offset Calibration Circuit and Related Receiver Stage 有权
标题翻译：低噪声直流偏移校准电路和相关接收器级
公开(公告)号：US20100001792A1
公开(公告)日：2010-01-07
申请号：US12168159
申请日：2008-07-07
申请人： Chi-Lun Lo , Yu-Hsin Lin
发明人： Chi-Lun Lo , Yu-Hsin Lin
IPC分类号： H03F1/02
CPC分类号： H04B1/30 , H04L25/0296
摘要： A receiver stage has an operational amplifier, a feedback resistor coupled between an output of the operational amplifier and an input of the operational amplifier, and a DC offset calibration circuit. The DC offset calibration circuit includes a plurality of resistors and a plurality of switches. Each resistor has a first end coupled to a supply voltage. First ends of each of the switches are coupled to second ends of each of the resistors, respectively, and second ends of the switches are coupled to the input of the operational amplifier.
摘要翻译：接收机级具有运算放大器，耦合在运算放大器的输出端和运算放大器的输入端之间的反馈电阻器以及DC偏置校准电路。 DC偏移校准电路包括多个电阻器和多个开关。每个电阻器具有耦合到电源电压的第一端。每个开关的第一端分别耦合到每个电阻器的第二端，并且开关的第二端耦合到运算放大器的输入端。

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