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1. 发明授权

US09900995B2 Touch panel and method for manufacturing the same 有权
公开(公告)号：US09900995B2
公开(公告)日：2018-02-20
申请号：US13978178
申请日：2012-01-03
申请人： Dong Youl Lee , Young Sun You , Kyoung Hoon Chai , Young Jin Noh , Yong Jin Lee , Sun Young Lee
发明人： Dong Youl Lee , Young Sun You , Kyoung Hoon Chai , Young Jin Noh , Yong Jin Lee , Sun Young Lee
IPC分类号： H05K3/46 , H05K1/02 , G06F3/044
CPC分类号： H05K3/46 , G06F3/044 , G06F2203/04103 , G06F2203/04112 , H05K1/0298 , Y10T29/49126
摘要： Provided is a method for manufacturing a touch panel. In the method, a substrate is prepared, a transparent electrode is formed on the substrate, an interconnection electrode material is applied to the substrate by printing, an interconnection electrode is formed by drying the interconnection electrode material, and a circuit board is disposed on the interconnection electrode.

2. 发明授权

US09698233B2 Tunnel insulation layer structures, methods of manufacturing the same, and vertical memory devices including the same 有权
公开(公告)号：US09698233B2
公开(公告)日：2017-07-04
申请号：US14644408
申请日：2015-03-11
申请人： Eun-Yeoung Choi , Young-Jin Noh , Bi-O Kim , Kwang-Min Park , Jae-Young Ahn , Ju-Mi Yun , Jae-Ho Choi , Ki-Hyun Hwang
发明人： Eun-Yeoung Choi , Young-Jin Noh , Bi-O Kim , Kwang-Min Park , Jae-Young Ahn , Ju-Mi Yun , Jae-Ho Choi , Ki-Hyun Hwang
IPC分类号： H01L29/792 , H01L29/51 , H01L27/11582 , H01L21/28
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11582 , H01L29/518
摘要： Tunnel insulation layer structures and methods of manufacturing the same are disclosed. The tunnel insulation layer structures may include a first tunnel insulation layer, a second tunnel insulation layer, a third tunnel insulation layer, a fourth tunnel insulation layer and a fifth tunnel insulation layer. The first tunnel insulation layer on a substrate has a first band gap energy. The second tunnel insulation layer on the first tunnel insulation layer has a second band gap energy which is lower than the first band gap energy. The third tunnel insulation layer on the second tunnel insulation layer has a third band gap energy which is higher than the second band gap energy. The fourth tunnel insulation layer on the third tunnel insulation layer has a fourth band gap energy which is lower than the third band gap energy. The fifth tunnel insulation layer on the fourth tunnel insulation layer has a fifth band gap energy which is higher than the fourth band gap energy.

3. 发明申请

US20170051409A1 THIN FILM DEPOSITION APPARATUS 审中-公开
标题翻译：薄膜沉积装置
公开(公告)号：US20170051409A1
公开(公告)日：2017-02-23
申请号：US15164915
申请日：2016-05-26
申请人： Young Jin NOH , Dong Min SON , Jae Myung CHOE , Jae Young AHN , Cheol Kyu YANG
发明人： Young Jin NOH , Dong Min SON , Jae Myung CHOE , Jae Young AHN , Cheol Kyu YANG
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45574 , C23C16/045 , C23C16/45546 , C23C16/45578 , H01L28/00
摘要： A thin film deposition apparatus, including a processing chamber; a boat in the processing chamber, the boat to accommodate a plurality of substrates therein; and a nozzle to supply a source gas to the processing chamber to form a thin film on each of the substrates, the nozzle including a plurality of T-shaped nozzle pipes, each of the T-shaped nozzle pipes including a first pipe having closed ends and a second pipe coupled to a middle portion of the first pipe.
摘要翻译：一种薄膜沉积设备，包括处理室; 在处理室中的船，其中容纳多个基板的船; 以及喷嘴，用于将源气体供应到处理室以在每个基板上形成薄膜，喷嘴包括多个T形喷嘴管，每个T形喷嘴管包括具有封闭端的第一管以及联接到所述第一管的中间部分的第二管。

4. 发明申请

US20160172372A1 SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件
公开(公告)号：US20160172372A1
公开(公告)日：2016-06-16
申请号：US14963987
申请日：2015-12-09
申请人： JU-MI YUN , YOUNG-JIN NOH , KWANG-MIN PARK , JAE-YOUNG AHN , GUK-HYON YON , DONG-CHUL YOO , JOONG-YUN RA , YOUNG-SEON SON , JEON-IL LEE , HUN-HYEONG LIM
发明人： JU-MI YUN , YOUNG-JIN NOH , KWANG-MIN PARK , JAE-YOUNG AHN , GUK-HYON YON , DONG-CHUL YOO , JOONG-YUN RA , YOUNG-SEON SON , JEON-IL LEE , HUN-HYEONG LIM
IPC分类号： H01L27/115 , H01L29/51 , H01L29/49 , H01L29/788
CPC分类号： H01L27/11582 , H01L21/28273 , H01L21/28282 , H01L27/11556 , H01L29/513 , H01L29/518 , H01L29/7883
摘要： A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.
摘要翻译：如下提供半导体器件。隧道绝缘层设置在基板上。隧道绝缘层包括第一氧化硅层，第二氧化硅层和介于第一氧化硅层和第二氧化硅层之间的硅层。硅层的厚度小于第一氧化硅层和第二氧化硅层的厚度。栅极图案设置在隧道绝缘层上。

5. 发明申请

US20160168704A1 GAS INJECTORS 审中-公开
标题翻译：燃气喷射器
公开(公告)号：US20160168704A1
公开(公告)日：2016-06-16
申请号：US14963744
申请日：2015-12-09
申请人： Ji-Hoon CHOI , Young-Jin NOH , Joong-Yun RA , Jae-Young AHN , Hun-hyeong LIM
发明人： Ji-Hoon CHOI , Young-Jin NOH , Joong-Yun RA , Jae-Young AHN , Hun-hyeong LIM
IPC分类号： C23C16/455
CPC分类号： C23C16/45578 , C23C16/45546
摘要： A gas injector may comprise: a gas introduction tube configured to introduce reaction gas into a reaction tube from a gas supply source; and/or a gas distributor connected to the gas introduction tube, extending from the gas introduction tube in a direction within the reaction tube, including a plurality of ejection holes in an inner surface of the gas distributor, and having an arc shape extending in a circumferential direction of the reaction tube. The ejection holes may be spaced apart from each other in the extending direction of the gas distributor, and are configured to spray the reaction gas.
摘要翻译：气体注入器可以包括：气体引入管，其构造成将反应气体从气体供应源引入反应管中; 和/或气体分配器，其连接到气体导入管，从气体导入管沿着反应管内的方向延伸，包括在气体分配器的内表面中的多个喷射孔，并且具有在反应管的圆周方向。喷射孔可以在气体分配器的延伸方向上彼此间隔开，并且被配置为喷射反应气体。

6. 发明申请

US20150279955A1 TUNNEL INSULATION LAYER STRUCTURES, METHODS OF MANUFACTURING THE SAME, AND VERTICAL MEMORY DEVICES INCLUDING THE SAME 有权
标题翻译：隧道绝缘层结构及其制造方法以及包括其的垂直存储器件
公开(公告)号：US20150279955A1
公开(公告)日：2015-10-01
申请号：US14644408
申请日：2015-03-11
申请人： Eun-Yeoung CHOI , Young-Jin NOH , Bi-O KIM , Kwang-Min PARK , Jae-Young AHN , Ju-Mi YUN , Jae-Ho CHOI , Ki-Hyun HWANG
发明人： Eun-Yeoung CHOI , Young-Jin NOH , Bi-O KIM , Kwang-Min PARK , Jae-Young AHN , Ju-Mi YUN , Jae-Ho CHOI , Ki-Hyun HWANG
IPC分类号： H01L29/51 , H01L21/28 , H01L27/115
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11582 , H01L29/518
摘要： Tunnel insulation layer structures and methods of manufacturing the same are disclosed. The tunnel insulation layer structures may include a first tunnel insulation layer, a second tunnel insulation layer, a third tunnel insulation layer, a fourth tunnel insulation layer and a fifth tunnel insulation layer. The first tunnel insulation layer on a substrate has a first band gap energy. The second tunnel insulation layer on the first tunnel insulation layer has a second band gap energy which is lower than the first band gap energy. The third tunnel insulation layer on the second tunnel insulation layer has a third band gap energy which is higher than the second band gap energy. The fourth tunnel insulation layer on the third tunnel insulation layer has a fourth band gap energy which is lower than the third band gap energy. The fifth tunnel insulation layer on the fourth tunnel insulation layer has a fifth band gap energy which is higher than the fourth band gap energy.
摘要翻译：公开了隧道绝缘层结构及其制造方法。隧道绝缘层结构可以包括第一隧道绝缘层，第二隧道绝缘层，第三隧道绝缘层，第四隧道绝缘层和第五隧道绝缘层。衬底上的第一隧道绝缘层具有第一带隙能量。第一隧道绝缘层上的第二隧道绝缘层具有低于第一带隙能量的第二带隙能量。第二隧道绝缘层上的第三隧道绝缘层具有高于第二带隙能量的第三带隙能量。第三隧道绝缘层上的第四隧道绝缘层具有低于第三带隙能量的第四带隙能量。第四隧道绝缘层上的第五隧道绝缘层具有比第四带隙能量高的第五带隙能量。

7. 发明申请

US20130293792A1 TOUCH PANEL, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE TOUCH PANEL 审中-公开
公开(公告)号：US20130293792A1
公开(公告)日：2013-11-07
申请号：US13979570
申请日：2012-01-10
申请人： Young Sun You , Yong Jin Lee , Kyoung Hoon Chai , Dong Youl Lee , Young Jin Noh , Sun Young Lee
发明人： Young Sun You , Yong Jin Lee , Kyoung Hoon Chai , Dong Youl Lee , Young Jin Noh , Sun Young Lee
IPC分类号： H01H1/06 , H01H11/00 , G02F1/1333
CPC分类号： H01L21/64 , G02F1/13338 , G06F3/044 , G06F3/045 , G06F2203/04103 , H01H1/06 , H01H11/00 , Y10T29/49105
摘要： A touch panel includes a substrate including at least one concave part, and a transparent electrode formed in the concave part to detect a position.

8. 发明申请

US20110275190A1 METHOD OF FORMING AN INSULATION STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：形成绝缘结构的方法及使用其制造半导体器件的方法
公开(公告)号：US20110275190A1
公开(公告)日：2011-11-10
申请号：US13188587
申请日：2011-07-22
申请人： Jung-Geun JEE , Young-Jin Noh , Bon-Young Koo , Chul-Sung Kim , Hun-Hyeoung Leam , Woong Lee
发明人： Jung-Geun JEE , Young-Jin Noh , Bon-Young Koo , Chul-Sung Kim , Hun-Hyeoung Leam , Woong Lee
IPC分类号： H01L21/762
CPC分类号： H01L21/3144 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662 , H01L27/115 , H01L27/11521
摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.
摘要翻译：在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。

9. 发明授权

US07608509B2 Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer 有权
标题翻译：制造具有形成在隧道氧化物层的边缘部分上的补偿部件的闪存装置的方法
公开(公告)号：US07608509B2
公开(公告)日：2009-10-27
申请号：US11494439
申请日：2006-07-27
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336
摘要： In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.
摘要翻译：在半导体器件和半导体器件的制造方法中，在衬底上形成具有突出的上部的预备隔离区以限定有源区。在有源区上形成绝缘层之后，在绝缘层上形成第一导电层。去除预分离区域的突出的上部，以在衬底上形成隔离区域并暴露第一导电层的侧壁，并且补偿构件形成在绝缘层的边缘部分上。补偿构件可以补充绝缘层的边缘部分，该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄，并且可以防止绝缘层的劣化。此外，具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。因此，半导体器件可以具有改善的电特性和可靠性。

10. 发明申请

US20090206383A1 Semiconductor Devices Having Tunnel and Gate Insulating Layers 失效
标题翻译：具有隧道和门绝缘层的半导体器件
公开(公告)号：US20090206383A1
公开(公告)日：2009-08-20
申请号：US12428078
申请日：2009-04-22
申请人： Chul-sung KIM , Young-jin NOH , Bon-young KOO , Sung-kweon BAEK
发明人： Chul-sung KIM , Young-jin NOH , Bon-young KOO , Sung-kweon BAEK
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L27/115
摘要： A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.
摘要翻译：半导体器件包括具有表面的半导体衬底，从半导体衬底的表面突出的掩埋隔离区域和在隔离区域之间的半导体衬底的表面上的第一绝缘层，并且包括氟，氮和/或重的氢杂质。浮置电极位于第一绝缘层上，第二绝缘层位于浮置电极和隔离区上，而控制栅极位于第二绝缘层上。还公开了形成半导体器件的相关方法。

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