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    • 3. 发明授权
    • Method of fabricating semiconductor device
    • 制造半导体器件的方法
    • US08530303B2
    • 2013-09-10
    • US13243147
    • 2011-09-23
    • Jin-Bum KimChul-Sung KimYu-Gyun ShinDae-Yong KimJoon-Gon LeeKwang-Young Lee
    • Jin-Bum KimChul-Sung KimYu-Gyun ShinDae-Yong KimJoon-Gon LeeKwang-Young Lee
    • H01L21/8249
    • H01L21/823807H01L21/823814
    • A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.
    • 制造半导体的方法包括提供具有限定在其中的第一区域和第二区域的衬底,在第一区域中形成第一栅极和第一源极和漏极区域,并在第一区域中形成第二栅极和第二源极和漏极区域 在所述第二源极和漏极区域中形成外延层,在所述第一源极和漏极区域中形成第一金属硅化物层,在所述第一区域和所述第二区域上形成层间电介质层,形成多个接触孔, 第一金属硅化物层和外延层,同时穿透层间电介质层,在暴露的外延层中形成第二金属硅化物层,并且通过填充多个接触孔形成与第一和第二金属硅化物层接触的多个触点。