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    • 3. 发明授权
    • Image forming apparatus capable of changing the surface potential of a
photosensitive member
    • 能够改变感光部件的表面电位的图像形成装置
    • US5331379A
    • 1994-07-19
    • US985419
    • 1992-12-04
    • Shinsaku YonedaYoshiyuki IshizukaNaoki MotobayashiTakehiko Okada
    • Shinsaku YonedaYoshiyuki IshizukaNaoki MotobayashiTakehiko Okada
    • G03G21/00G03G15/02H01T19/00
    • G03G15/0266G03G15/0291
    • An image forming apparatus is provided with a photosensitive member; a charger including a corona ion generator and a grid electrode provided between the photosensitive member and the corona ion generator, and adapted for charging the surface of the photosensitive member while regulating the surface potential of the photosensitive member by the grid electrode; a current supply circuit connected to the charger and capable of supplying to the charger a first current not lower than a specified level for charging the surface of the photosensitive member at a first voltage at which an image of high contrast can be formed and a second current lower than the specified level for charging the surface of the photosensitive member at a second voltage at which an image having an intermediate gradation thereof emphasized is formed, the second voltage being lower than the first voltage; and a current switch circuit for switching the level of the current to be supplied to the charger means according to needs. Accordingly, a circuit construction of the charger can be simplified and the number of components thereof can be reduced, with the result that the price of the apparatus itself can be reduced.
    • 图像形成装置设置有感光构件; 充电器,其包括电晕离子发生器和设置在感光构件和电晕离子发生器之间的栅极,并且适于在通过栅电极调节感光构件的表面电位的同时对感光构件的表面充电; 连接到充电器的电流供应电路,其能够向充电器提供不低于指定电平的第一电流,以便以可形成高对比度的图像的第一电压和第二电流来对感光部件的表面充电 低于形成有中间灰度的图像的第二电压对感光构件的表面充电的指定电平,第二电压低于第一电压; 以及电流开关电路,用于根据需要切换要提供给充电器装置的电流的电平。 因此,可以简化充电器的电路结构,并且可以减少其组件的数量,结果可以降低设备本身的价格。
    • 5. 发明授权
    • Memory
    • 记忆
    • US07110279B2
    • 2006-09-19
    • US10935554
    • 2004-09-08
    • Hideaki MiyamotoYoshiyuki IshizukaNaofumi Sakai
    • Hideaki MiyamotoYoshiyuki IshizukaNaofumi Sakai
    • G11C11/22G11C11/24
    • G11C11/22
    • A memory capable of suppressing disturbance is provided. This memory activates each of a selected word line and a bit line corresponding to unrewritten storage means while keeping potential difference therebetween at a level not more than a prescribed value and differentiates the length of a period for applying a voltage for rewriting to each of the selected word line and a bit line corresponding to rewritten storage means from the length of a transition period of the potential of at least either the word line or the bit line corresponding to the unrewritten storage means when performing a rewrite operation on partial selected storage means or performing no rewrite operation on all selected storage means.
    • 提供了能够抑制干扰的存储器。 该存储器激活对应于未启动存储装置的选定字线和位线中的每一个,同时保持它们之间的电位差不超过规定值,并且将用于重写的电压的周期长度区分为所选择的每一个 字线和对应于重写存储装置的位线,当对部分选择的存储装置执行重写操作时,从对应于未刷新存储装置的字线或位线中的至少一个的电位的转变周期的长度的长度, 对所有选定的存储装置不进行重写操作。
    • 6. 发明授权
    • Memory
    • 记忆
    • US07420833B2
    • 2008-09-02
    • US10936593
    • 2004-09-09
    • Toru DanNaofumi SakaiShigeharu MatsushitaYoshiyuki Ishizuka
    • Toru DanNaofumi SakaiShigeharu MatsushitaYoshiyuki Ishizuka
    • G11C11/22
    • G11C11/22
    • A memory capable of suppressing disturbance causing disappearance of data in a nonselected memory cell is provided. This memory comprises a memory cell array including a bit line, a word line arranged to intersect with the bit line and memory cells connected between the bit line and the word line, for accessing a selected memory cell thereby deteriorating a remanent polarization in an arbitrary memory cell and thereafter performing recovery for recovering all memory cells to remanent polarizations immediately after a write operation or remanent polarizations subjected to single application of a voltage applied to a nonselected memory cell in the access.
    • 提供了能够抑制导致非选择存储单元中的数据消失的存储器。 该存储器包括存储单元阵列,其包括位线,与位线相交的字线和连接在位线和字线之间的存储单元,用于访问选定的存储单元,从而降低任意存储器中的剩余极化 然后在执行写入操作之后立即恢复所有存储器单元以恢复所有存储器单元以进行恢复,以在单次施加施加到访问中的非选择存储单元的电压之后执行剩余极化。