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1. 发明申请

US20100200394A1 VACUUM THIN FILM FORMING APPARATUS 审中-公开
标题翻译：真空薄膜成型装置
公开(公告)号：US20100200394A1
公开(公告)日：2010-08-12
申请号：US12719920
申请日：2010-03-09
申请人： Yoshinori Nagamine , Kanto Nakamura , Koji Tsunekawa
发明人： Yoshinori Nagamine , Kanto Nakamura , Koji Tsunekawa
IPC分类号： C23C14/34
CPC分类号： C23C14/225 , C23C14/081 , C23C14/345 , H01J37/32091 , H01J37/32174 , H01J37/32706 , H01J37/34 , H01L43/12
摘要： In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected to the electrode for adjusting the potential of the substrate on the substrate holder.
摘要翻译：为了始终将基板上的自偏压自动调整为恒定值，并且形成具有优异的工艺再现性的高品质绝缘膜，根据本发明的真空薄膜形成装置包括：高频具有室的溅射装置，用于抽空室内的抽气装置，用于向室内供给气体的气体引入装置，设置在室内的基板保持架以及设置在基板保持架内的电极; 以及至少一个真空处理室，其可以选自包括物理气相沉积（PVD）室，化学气相沉积（CVD）室，物理蚀刻室，化学蚀刻室，基板加热室，基板冷却室，氧化处理室，还原处理室和灰化室，其中所述高频溅射装置还包括电连接到所述电极的可变阻抗机构，用于调节所述基板保持器上的所述基板的电位。

2. 发明授权

US4881019A Wiper control system for automotive vehicle facilitated front and rear wipers 失效
标题翻译：汽车刮水器控制系统方便前后雨刷
公开(公告)号：US4881019A
公开(公告)日：1989-11-14
申请号：US44053
申请日：1987-04-29
申请人： Yasuhiro Shiraishi , Yoshinori Nagamine
发明人： Yasuhiro Shiraishi , Yoshinori Nagamine
IPC分类号： B60S1/08 , B60S1/48 , B60S1/58
CPC分类号： B60S1/485 , B60S1/486 , B60S1/583 , Y10S318/02
摘要： A wiper control system includes a rear wiper control circuit associated with a front wiper control circuit. The wiper drive signals generated in the front wiper control circuit are fed to the rear wiper control circuit. The rear wiper control circuit derives a rear wiper drive timing on the basis of the occurrences of the front wiper drive signals. The rear wiper driving frequency is generally lower than that of the front wiper driving frequency. The lower rate of the rear wiper driving frequency relative to the front wiper driving frequency is preferably variable depending upon the vehicle driving condition.
摘要翻译：刮水器控制系统包括与前雨刮器控制电路相关联的后雨刮器控制电路。在前雨刮器控制电路中产生的刮水器驱动信号被馈送到后雨刮器控制电路。后雨刮器控制电路基于前雨刮器驱动信号的发生而导出后雨刮器驱动定时。后雨刮器的驱动频率通常低于前雨刷器的驱动频率。后雨刷驱动频率相对于前雨刷器驱动频率的较低速率优选地根据车辆驾驶状况而变化。

3. 发明授权

US09017535B2 High-frequency sputtering device 有权
标题翻译：高频溅射装置
公开(公告)号：US09017535B2
公开(公告)日：2015-04-28
申请号：US12727316
申请日：2010-03-19
申请人： Yoshinori Nagamine , Kanto Nakamura , Koji Tsunekawa
发明人： Yoshinori Nagamine , Kanto Nakamura , Koji Tsunekawa
IPC分类号： C23C14/00 , C25B9/00 , C25B11/00 , C25B13/00 , C23C16/00 , C23C14/50 , C23C16/458 , C23C14/35 , H01J37/34 , C23C14/08 , C23C14/22 , C23C14/34 , H01L43/12
CPC分类号： C23C14/50 , C23C14/081 , C23C14/225 , C23C14/345 , C23C14/3464 , C23C14/352 , C23C16/4586 , H01J37/3417 , H01J37/3438 , H01J37/3444 , H01L43/12
摘要： Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.
摘要翻译：通过使用控制高频溅射装置的自偏压的方法，提供了高质量的磁阻薄膜。为了通过调整衬底电位来控制衬底的自偏压，根据本发明的高频溅射器件包括：腔室; 用于抽空腔室内部的排气装置; 气体引入装置，用于将气体供应到所述腔室中; 衬底保持器，其设置有衬底安装台; 旋转驱动装置，能够使基板保持架旋转; 设置有目标安装台的溅射阴极，并且被配置为使得所述目标安装台的表面不平行于所述基板安装台的表面; 设置在所述衬底保持器内的电极; 以及电连接到电极的可变阻抗机构，用于调节衬底保持器上的衬底电位。

4. 发明授权

US08932438B2 Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium 有权
标题翻译：制造磁阻元件的方法，溅射沉积室，用于制造具有溅射沉积室的磁阻元件的装置，程序和存储介质
公开(公告)号：US08932438B2
公开(公告)日：2015-01-13
申请号：US12972823
申请日：2010-12-20
申请人： Koji Tsunekawa , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
发明人： Koji Tsunekawa , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
IPC分类号： C23C14/34 , G11B5/39 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/22 , G01R33/09 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/12 , G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/225 , C23C14/3464 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/302 , H01L43/12
摘要： The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
摘要翻译：自旋阀隧道磁阻元件或巨磁阻元件中的磁性层的磁各向异性增强。通过使溅射粒子以一定的入射角从特定的入射方向倾斜入射到基板上来进行磁性层的沉积。

5. 发明授权

US08367156B2 Method of manufacturing magnetoresistive device and apparatus for manufacturing the same 有权
标题翻译：制造磁阻装置的方法及其制造装置
公开(公告)号：US08367156B2
公开(公告)日：2013-02-05
申请号：US13177237
申请日：2011-07-06
申请人： Yoshinori Nagamine , Koji Tsunekawa , David Djulianto Djayaprawira , Hiroki Maehara
发明人： Yoshinori Nagamine , Koji Tsunekawa , David Djulianto Djayaprawira , Hiroki Maehara
IPC分类号： B05D5/12
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.
摘要翻译：磁阻器件具有设置在第一铁磁层和第二铁磁层之间的MgO（氧化镁）层。该器件通过在成膜室中形成MgO层的膜来制造。对于氧化气体的吸气剂效果大的物质粘附到设置在用于形成MgO层的室中的部件的表面上。具有较大吸气效果的物质是其氧气吸附能值为145kcal / mol以上的物质。特别地，Ta（钽）作为构成磁阻器件的物质是优选的。

6. 发明申请

US20110143460A1 METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD 审中-公开
标题翻译：在制造方法中使用的磁阻元件和储存介质的制造方法
公开(公告)号：US20110143460A1
公开(公告)日：2011-06-16
申请号：US13059464
申请日：2009-08-31
申请人： Koji Tsunekawa , Yoshinori Nagamine , Shinji Yamagata
发明人： Koji Tsunekawa , Yoshinori Nagamine , Shinji Yamagata
IPC分类号： H01L21/02
CPC分类号： H01L43/08 , C23C14/081 , C23C14/225 , C23C14/3414 , C23C14/568 , H01L43/12
摘要： An embodiment of the invention provides a method of manufacturing a magnetoresistance element with an MR ratio higher than that of the related art.A method of manufacturing a magnetoresistance element includes a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer provided between the magnetization fixed layer and the magnetization free layer on a substrate. In the method, the tunnel barrier layer is formed by arranging a target that has a diameter smaller than that of the substrate, contains a magnesium oxide sintered body, and has a relative density 90% or more so as to be inclined with respect to a surface to be deposited of the substrate, and forming a magnesium oxide layer using a sputtering method while rotating the substrate.
摘要翻译：本发明的实施例提供一种制造MR比高于现有技术的磁阻元件的方法。制造磁阻元件的方法包括形成磁化固定层，磁化自由层和设置在基板上的磁化固定层和磁化自由层之间的隧道势垒层的步骤。在该方法中，隧道势垒层通过配置直径小于基板的靶，含有氧化镁烧结体而形成，相对密度为90％以上，以相对于表面沉积，并且在旋转衬底的同时使用溅射法形成氧化镁层。

7. 发明申请

US20110139606A1 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT, SPUTTER DEPOSITION CHAMBER, APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING SPUTTER DEPOSITION CHAMBER, PROGRAM AND STORAGE MEDIUM 有权
标题翻译：制造磁性元件，溅射沉积室的方法，用于制造具有溅射沉积室的磁性元件的装置，程序和存储介质
公开(公告)号：US20110139606A1
公开(公告)日：2011-06-16
申请号：US12972823
申请日：2010-12-20
申请人： Koji TSUNEKAWA , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
发明人： Koji TSUNEKAWA , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
IPC分类号： C23C14/34 , C23C14/06
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/225 , C23C14/3464 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/302 , H01L43/12
摘要： The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
摘要翻译：自旋阀隧道磁阻元件或巨磁阻元件中的磁性层的磁各向异性增强。通过使溅射粒子以一定的入射角从特定的入射方向倾斜入射到基板上来进行磁性层的沉积。

8. 发明申请

US20100078310A1 FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM 审中-公开
标题翻译：磁性元件的制造方法和存储介质
公开(公告)号：US20100078310A1
公开(公告)日：2010-04-01
申请号：US12483704
申请日：2009-06-12
申请人： Koji Tsunekawa , Yoshinori Nagamine
发明人： Koji Tsunekawa , Yoshinori Nagamine
IPC分类号： C23C14/34
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/12
摘要： The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.
摘要翻译：本发明提供一种具有高于常规MR比的MR比的磁阻元件的制造方法。在本发明的一个实施例中，使用溅射法在基板上沉积磁化固定层，磁化自由层和隧道势垒层的步骤中，沉积无磁化层的步骤沉积含有Co原子的铁磁层通过使用包含Co原子，Fe原子和B原子的第一靶的共溅射法，和与第一靶相同的B原子含量的第二靶，通过共溅射法。

9. 发明申请

US20090261436A1 NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT 有权
标题翻译：使用磁阻效应的负极电阻器件
公开(公告)号：US20090261436A1
公开(公告)日：2009-10-22
申请号：US12468369
申请日：2009-05-19
申请人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
发明人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/14 , H01F10/3254 , H01F10/3272 , H01L29/885
摘要： A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.
摘要翻译：磁阻装置具有无磁性层（33），具有比无磁性层的磁矩大的磁矩的磁性固定层（31）和设置在磁性自由层和磁性层之间的中间层（32）固定层。负电阻器件的特征在于，负电阻器件通过使磁性自由层随着施加到磁阻器件的电压的增加而不断地改变磁化方向而显示出负的电阻，使得电子流入来自无磁层的负电阻器件。

10. 发明申请

US20090004884A1 OXIDIZING METHOD AND OXIDIZING APPARATUS 审中-公开
标题翻译：氧化方法和氧化装置
公开(公告)号：US20090004884A1
公开(公告)日：2009-01-01
申请号：US12201630
申请日：2008-08-29
申请人： Yoshinori Nagamine , Naoki Wtanabe
发明人： Yoshinori Nagamine , Naoki Wtanabe
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L43/12 , H01L43/08
摘要： An oxidizing method and oxidizing apparatus in which a plasma generating chamber having an oxidizing gas supply port and a substrate processing chamber having an exhaust port and internally having a substrate susceptor are connected via a partition having a number of through holes, a plasma of an oxidizing gas supplied into the plasma generating chamber is generated, and an oxide layer is formed on a substrate surface by supplying the generated active species onto a substrate are characterized in that the partition is connected to a power supply via a switching mechanism such that a positive, negative, or zero voltage is applied to the partition, and an oxidation process is performed by changing the ratio of radicals, positive ions, and negative ions in the active species supplied onto the substrate by switching the voltages at least once during the oxidation process.
摘要翻译：一种氧化方法和氧化装置，其中具有氧化气体供给口的等离子体发生室和具有排气口并且内部具有基板基座的基板处理室经由具有多个通孔的隔板连接，氧化等离子体产生供应到等离子体产生室中的气体，并且通过将所产生的活性物质提供到衬底上而在衬底表面上形成氧化物层，其特征在于，隔板经由开关机构连接到电源，将负电压或零电压施加到隔板，并且通过在氧化处理期间通过切换电压至少一次来改变提供给衬底上的活性物质中的自由基，正离子和负离子的比例来进行氧化过程。

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