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1. 发明申请

US20090322419A1 AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE 审中-公开
标题翻译：放大器使用磁电阻器件
公开(公告)号：US20090322419A1
公开(公告)日：2009-12-31
申请号：US12506201
申请日：2009-07-20
申请人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
发明人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
IPC分类号： H03F1/00
CPC分类号： H01L29/66984 , G11C11/161 , H01L29/82 , H01L43/08
摘要： An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal.
摘要翻译：放大装置包括具有无磁性层的磁阻装置，具有比无磁性层的磁矩大的磁矩的磁性固定层以及设置在磁性自由层和磁性固定层之间的中间层。放大装置具有设置在磁阻装置的磁性自由层侧的第一电极层和设置在磁阻装置的磁性固定层侧的第二电极层。放大装置还包括用于向磁阻装置施加直流偏压的直流偏置电源和负载电阻。放大装置持续地引起磁性自由层的磁化方向的变化，使得磁阻装置显示负电阻，从而放大输入信号。

2. 发明授权

US07220498B2 Tunnel magnetoresistance element 失效
标题翻译：隧道磁阻元件
公开(公告)号：US07220498B2
公开(公告)日：2007-05-22
申请号：US10478203
申请日：2002-05-24
申请人： Taro Nagahama , Shinji Yuasa , Yoshishige Suzuki
发明人： Taro Nagahama , Shinji Yuasa , Yoshishige Suzuki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/06 , G01R33/093 , G01R33/098 , G11B5/3909 , G11C11/16 , H01F10/3231 , H01F10/3254 , H01L27/222 , Y10T428/1114 , Y10T428/1143 , Y10T428/1157 , Y10T428/1193
摘要： By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.
摘要翻译：通过仅改变具有优异磁特性的已知材料的厚度以增加自旋极化而不改变化学组成，提供了能够产生更大磁阻效应的隧道磁阻元件。隧道磁阻元件包括底层（非磁性或反铁磁金属膜）; 设置在底层上的超薄铁磁层; 设置在所述超薄铁磁层上的绝缘层; 以及设置在绝缘层上的铁磁电极。

3. 发明授权

US07764136B2 Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element 有权
标题翻译：微波传输线集成微波发生元件和微波传输线集成微波检测元件
公开(公告)号：US07764136B2
公开(公告)日：2010-07-27
申请号：US11886083
申请日：2006-03-17
申请人： Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
发明人： Yoshishige Suzuki , Shinji Yuasa , Akio Fukushima , Ashwin Tulapurkar
IPC分类号： H03K3/313 , H01L29/82
CPC分类号： H01L43/08 , H01P11/003 , H01Q23/00 , H03B15/006
摘要： A strip line integrated microwave generating element and a microwave detecting element comprises a signal electrode and a ground electrode. The element has a magnetic tunnel junction structure which includes a magnetization fixed layer, a MgO tunnel barrier layer, and a magnetization free layer. The magnetization free layer is 200 nm square or smaller in a cross-sectional area. The magnetization fixed layer is in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the element being in contact with the other. The element is smaller than the electrodes and mounted on a part of the signal electrode or the ground electrode. A MR ratio of the element is of 100% or more. A resistance value of the element is from 50Ω to 300Ω. The resistance of the element is matched with an impedance of the microwave transmission line.
摘要翻译：带状集成微波发生元件和微波检测元件包括信号电极和接地电极。元件具有包括磁化固定层，MgO隧道势垒层和无磁化层的磁性隧道结结构。磁化自由层的横截面积为200nm以下。磁化固定层与信号电极和接地电极中的任一个接触，而元件的无磁化层与另一个接触。元件比电极小，并且安装在信号电极或接地电极的一部分上。元件的MR比率为100％以上。元素的电阻值为50＆OHgr; 至300＆OHgr; 元件的电阻与微波传输线的阻抗相匹配。

4. 发明授权

US08013408B2 Negative-resistance device with the use of magneto-resistive effect 有权
标题翻译：负电阻器件采用磁阻效应
公开(公告)号：US08013408B2
公开(公告)日：2011-09-06
申请号：US12468369
申请日：2009-05-19
申请人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
发明人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/14 , H01F10/3254 , H01F10/3272 , H01L29/885
摘要： A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.
摘要翻译：磁阻装置具有无磁性层（33），具有比无磁性层的磁矩大的磁矩的磁性固定层（31）和设置在磁性自由层和磁性层之间的中间层（32）固定层。负电阻器件的特征在于，负电阻器件通过使磁性自由层随着施加到磁阻器件的电压的增加而不断地改变磁化方向而显示出负的电阻，使得电子流入来自无磁层的负电阻器件。

5. 发明申请

US20110049659A1 MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATION STORAGE ELEMENT, AND MAGNETIC FUNCTION ELEMENT 审中-公开
标题翻译：磁化控制方法，信息存储方法，信息存储元件和磁功能元件
公开(公告)号：US20110049659A1
公开(公告)日：2011-03-03
申请号：US12990524
申请日：2009-02-27
申请人： Yoshishige Suzuki , Takayuki Nozaki , Takuto Maruyama , Yoichi Shiota
发明人： Yoshishige Suzuki , Takayuki Nozaki , Takuto Maruyama , Yoichi Shiota
IPC分类号： H01L43/06 , H01F13/00
CPC分类号： H01F10/3286 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F41/302 , H01F41/307 , H01L43/08
摘要： The present invention provides a magnetization control method controlling, utilizing no current-induced magnetic field or spin transfer torque a magnetization direction with low power consumption, an information storage method, an information storage element, and a magnetic function element. The magnetization control method involves controlling a magnetization direction of a magnetic layer, and includes: forming a structure including (i) the magnetic layer which is an ultrathin film ferromagnetic layer having a film thickness of one or more atomic layers and of 2 nm or less, and (ii) an insulating layer provided on the ultrathin film ferromagnetic layer and working as a potential barrier; and controlling a magnetization direction of the ultrathin film ferromagnetic layer by applying either (i) a voltage to opposing electrodes sandwiching the structure and a base layer or (ii) an electric field to the structure to change magnetic anisotropy of the ultrathin film ferromagnetic layer. The magnetization control method further involves controlling a waveform of the applied voltage or the applied electric field to switch the magnetization direction.
摘要翻译：本发明提供一种控制利用低功耗的磁化方向的电流感应磁场或自旋转移转矩的磁化控制方法，信息存储方法，信息存储元件和磁功能元件。磁化控制方法包括控制磁性层的磁化方向，并且包括：形成包括（i）具有一个或多个原子层的膜厚度和2nm以下的膜的超薄膜铁磁性层的磁性层的结构，和（ii）设置在超薄膜铁磁层上并用作势垒的绝缘层; 并且通过对（i）将夹在该结构和基底层的相对电极施加电压，或（ii）向该结构施加电场以改变该超薄膜铁磁层的磁各向异性来控制该超薄膜铁磁层的磁化方向。磁化控制方法还包括控制所施加的电压或所施加的电场的波形以切换磁化方向。

6. 发明授权

US07514160B2 Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001) 失效
标题翻译：隧道磁阻元件具有双层无定形MgO底层和结晶MgO（001）
公开(公告)号：US07514160B2
公开(公告)日：2009-04-07
申请号：US11673919
申请日：2007-02-12
申请人： Taro Nagahama , Shinji Yuasa , Yoshishige Suzuki
发明人： Taro Nagahama , Shinji Yuasa , Yoshishige Suzuki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/06 , G01R33/093 , G01R33/098 , G11B5/3909 , G11C11/16 , H01F10/3231 , H01F10/3254 , H01L27/222 , Y10T428/1114 , Y10T428/1143 , Y10T428/1157 , Y10T428/1193
摘要： By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.
摘要翻译：通过仅改变具有优异磁特性的已知材料的厚度以增加自旋极化而不改变化学组成，提供了能够产生更大磁阻效应的隧道磁阻元件。隧道磁阻元件包括底层（非磁性或反铁磁金属膜）; 设置在底层上的超薄铁磁层; 设置在所述超薄铁磁层上的绝缘层; 以及设置在绝缘层上的铁磁电极。

7. 发明申请

US20150085569A1 ELECTRIC FIELD FERROMAGNETIC RESONANCE EXCITATION METHOD AND MAGNETIC FUNCTION ELEMENT EMPLOYING SAME 有权
标题翻译：电磁共振激发方法和使用其的磁功能元件
公开(公告)号：US20150085569A1
公开(公告)日：2015-03-26
申请号：US14240158
申请日：2012-06-18
申请人： Takayuki Nozaki , Yoshishige Suzuki
发明人： Takayuki Nozaki , Yoshishige Suzuki
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , B82Y40/00 , G11B5/147 , G11C11/2275 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/303 , H01L29/66984 , H01L43/08 , H03B15/006
摘要： To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.
摘要翻译：为了实现使用电场作为驱动功率的低功耗的电场驱动型铁磁共振激励方法，并且使用该方法提供自旋波信号生成元件和自旋电流信号生成元件，使用这些元件的逻辑元件，以及诸如高频检测元件的磁功能元件和使用该方法的磁记录装置。将具有特定磁场施加角和磁场强度的磁场施加到其中极薄铁磁层足够薄以致不会发生通过传导电子的电场屏蔽效应并且磁各向异性控制层直接堆叠的层叠结构并且绝缘阻挡层和电极层依次布置在超薄铁磁层一侧。然后，在磁各向异性控制层和电极层之间施加具有磁共振频率的高频分量的电场，从而有效地激励超薄铁磁层中的铁磁共振。

8. 发明申请

US20070128470A1 TUNNEL MAGNETORESISTANCE ELEMENT 失效
标题翻译：隧道磁阻元件
公开(公告)号：US20070128470A1
公开(公告)日：2007-06-07
申请号：US11673919
申请日：2007-02-12
申请人： Taro Nagahama , Shinji Yuasa , Yoshishige Suzuki
发明人： Taro Nagahama , Shinji Yuasa , Yoshishige Suzuki
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/06 , G01R33/093 , G01R33/098 , G11B5/3909 , G11C11/16 , H01F10/3231 , H01F10/3254 , H01L27/222 , Y10T428/1114 , Y10T428/1143 , Y10T428/1157 , Y10T428/1193
摘要： By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.
摘要翻译：通过仅改变具有优异磁特性的已知材料的厚度以增加自旋极化而不改变化学成分，提供了能够产生更大磁阻效应的隧道磁阻元件。隧道磁阻元件包括底层（非磁性或反铁磁金属膜）; 设置在底层上的超薄铁磁层; 设置在所述超薄铁磁层上的绝缘层; 以及设置在绝缘层上的铁磁电极。

9. 发明授权

US09460769B2 Electric field ferromagnetic resonance excitation method and magnetic function element employing same 有权
标题翻译：电场铁磁共振激励法和磁功能元件采用相同
公开(公告)号：US09460769B2
公开(公告)日：2016-10-04
申请号：US14240158
申请日：2012-06-18
申请人： Takayuki Nozaki , Yoshishige Suzuki
发明人： Takayuki Nozaki , Yoshishige Suzuki
IPC分类号： G11B5/147 , G11C11/16 , H01L29/66 , H01L43/08 , H03B15/00 , H01F41/30 , B82Y40/00 , H01F10/32
CPC分类号： G11C11/1675 , B82Y40/00 , G11B5/147 , G11C11/2275 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/303 , H01L29/66984 , H01L43/08 , H03B15/006
摘要： To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.
摘要翻译：为了实现使用电场作为驱动功率的低功耗的电场驱动型铁磁共振激励方法，并且使用该方法提供自旋波信号生成元件和自旋电流信号生成元件，使用这些元件的逻辑元件，以及诸如高频检测元件的磁功能元件和使用该方法的磁记录装置。将具有特定磁场施加角和磁场强度的磁场施加到其中极薄铁磁层足够薄以致不会发生通过传导电子的电场屏蔽效应并且磁各向异性控制层直接堆叠的层叠结构并且绝缘阻挡层和电极层依次布置在超薄铁磁层一侧。然后，在磁各向异性控制层和电极层之间施加具有磁共振频率的高频分量的电场，从而有效地激励超薄铁磁层中的铁磁共振。

10. 发明申请

US20090261436A1 NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT 有权
标题翻译：使用磁阻效应的负极电阻器件
公开(公告)号：US20090261436A1
公开(公告)日：2009-10-22
申请号：US12468369
申请日：2009-05-19
申请人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
发明人： Hiroki Maehara , Hitoshi Kubota , Akio Fukushima , Shinji Yuasa , Yoshishige Suzuki , Yoshinori Nagamine
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/14 , H01F10/3254 , H01F10/3272 , H01L29/885
摘要： A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.
摘要翻译：磁阻装置具有无磁性层（33），具有比无磁性层的磁矩大的磁矩的磁性固定层（31）和设置在磁性自由层和磁性层之间的中间层（32）固定层。负电阻器件的特征在于，负电阻器件通过使磁性自由层随着施加到磁阻器件的电压的增加而不断地改变磁化方向而显示出负的电阻，使得电子流入来自无磁层的负电阻器件。

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