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1. 发明授权

US08802221B2 Intermediate transfer member for transfer ink jet recording 有权
标题翻译：用于转印喷墨记录的中间转印部件
公开(公告)号：US08802221B2
公开(公告)日：2014-08-12
申请号：US13813091
申请日：2011-07-15
申请人： Mitsutoshi Noguchi , Midori Kushida , Yoshikazu Saito , Mamiko Kaji , Hikaru Ueda
发明人： Mitsutoshi Noguchi , Midori Kushida , Yoshikazu Saito , Mamiko Kaji , Hikaru Ueda
IPC分类号： B41M5/00 , B44C1/17 , G03G7/00 , B41M5/52 , C08G77/12 , C08L83/04 , C09D183/04
CPC分类号： C08G77/12 , B41J2/0057 , B41M5/0256 , B41M5/03 , B41M5/52 , B41M5/529 , C08L83/04 , C09D183/04 , Y10S428/914 , Y10T428/24802 , Y10T428/31663
摘要： There is provided an intermediate transfer member for transfer ink jet recording to which inks and coagulants can be satisfactorily applied and that can substantially maintain high water repellency through repetitive transfer.An intermediate transfer member for use in transfer ink jet recording, wherein an outer portion of the intermediate transfer member contains a component produced by condensing at least an organosilicon compound having the following general formula (1): X—Si(OR1)a(R2)b (1) wherein X denotes a substituent having a vinyl group or a cyclic ether group, R1 denotes a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R2 denotes an alkyl group having 1 to 20 carbon atoms, a is a natural number in the range of 1 to 3, b is an integer in the range of 0 to 2, and a+b=3.
摘要翻译：提供了用于转印喷墨记录的中间转印部件，油墨和凝结剂可以令人满意地施加到该中间转印部件上，并且可以通过重复转印基本上保持高的防水性。用于转印喷墨记录用的中间转印部件，其中中间转印部件的外部含有通过将至少具有以下通式（1）的有机硅化合物：X-Si（OR 1）a（R 2 ）b（1）其中，X表示具有乙烯基或环状醚基的取代基，R 1表示氢原子或碳原子数1〜4的烷基，R 2表示碳原子数1〜20的烷基，a表示在1〜3的范围内的自然数，b为0〜2的整数，a + b = 3。

2. 发明申请

US20130127965A1 INTERMEDIATE TRANSFER MEMBER FOR TRANSFER INK JET RECORDING 有权
标题翻译：用于转印墨水记录的中间转移构件
公开(公告)号：US20130127965A1
公开(公告)日：2013-05-23
申请号：US13813064
申请日：2011-07-23
申请人： Midori Kushida , Mitsutoshi Noguchi , Yoshikazu Saito , Mamiko Kaji , Hikaru Ueda
发明人： Midori Kushida , Mitsutoshi Noguchi , Yoshikazu Saito , Mamiko Kaji , Hikaru Ueda
IPC分类号： B41J2/005
CPC分类号： B41J2/0057 , B32B27/08 , B32B27/32 , B41M5/0256 , B41M5/03 , B41M5/42 , B41M5/44 , B41M5/502 , B41M5/52 , C08J5/124 , C08J5/125 , C08J5/18 , C08J2321/00 , Y10S428/914 , Y10T428/3171
摘要： There is provided an intermediate transfer member for transfer ink jet recording in which formation of cracks on its surface is suppressed and that has good transferability. The intermediate transfer member for transfer ink jet recording includes a surface layer, a buffer layer, and a compression layer, wherein the surface layer, the buffer layer, and the compression layer are formed in that order from the image-forming surface side, a compression modulus (E1) of the surface layer is 300 MPa or more and 10000 MPa or less, a compression modulus (E2) of the buffer layer is 0.5 MPa or more and 30.0 MPa or less, and E1, E2, and a compression modulus (E3) of the compression layer satisfy formula (1) below. (E1/10)>E2>E3 Formula (1)
摘要翻译：提供了用于转印喷墨记录的中间转印部件，其中表面上形成裂纹并具有良好的转印性。用于转印喷墨记录的中间转印部件包括表面层，缓冲层和压缩层，其中表面层，缓冲层和压缩层从成像表面侧依次形成，表面层的压缩弹性模量（E1）为300MPa以上且10000MPa以下，缓冲层的压缩弹性模量（E2）为0.5MPa以上且30.0MPa以下，E1，E2和压缩弹性模量（E3）满足下式（1）。（E1 / 10）> E2> E3Formula（1）

3. 发明申请

US20110122198A1 INK JET RECORDING HEAD, PRODUCING METHOD THEREFOR AND COMPOSITION FOR INK JET RECORDING HEAD 有权
标题翻译：喷墨记录头，喷墨记录头的制作方法及其组合
公开(公告)号：US20110122198A1
公开(公告)日：2011-05-26
申请号：US13017114
申请日：2011-01-31
申请人： Etsuko Hino , Norio Ohkuma , Yoshikazu Saito , Mitsutoshi Noguchi , Helmut Schmidt , Carsten Becker-Willinger , Pamela Kalmes
发明人： Etsuko Hino , Norio Ohkuma , Yoshikazu Saito , Mitsutoshi Noguchi , Helmut Schmidt , Carsten Becker-Willinger , Pamela Kalmes
IPC分类号： B41J2/14
CPC分类号： G03F7/0757 , B41J2/1603 , B41J2/1623 , B41J2/1626 , B41J2/1631 , B41J2/1639 , B41J2/1645 , G03F7/038
摘要： The invention provides a method for producing an ink jet recording head having a high durability and a high ink resistance and enabling a high-quality image recording by employing a material capable of reducing the internal stress and having satisfactory patterning characteristics. It also provides a method of producing such ink jet recording head with a high precision. A cationically photopolymerizable resin composition containing a condensate of a hydrolysable organosilane compound, employed as a material for forming a flow path forming member, enables a reduction of internal stress and a highly precise pattern in the flow path forming member thereby providing an ink jet recording head having a high durability and a high ink resistance and capable of high-quality printing over a prolonged time, and a producing method therefor.
摘要翻译：本发明提供了一种制造具有高耐久性和高油墨电阻的喷墨记录头的方法，并且能够通过采用能够降低内应力并具有令人满意的图案特征的材料进行高质量的图像记录。它还提供了一种以高精度制造这种喷墨记录头的方法。作为用于形成流路形成部件的材料的含有可水解的有机硅烷化合物的缩合物的阳离子光聚合性树脂组合物能够在流路形成部件中降低内部应力和高精度图案，从而提供喷墨记录头具有高耐久性和高耐油墨性并且能够在长时间内进行高质量印刷及其制造方法。

4. 发明申请

US20100309247A1 INK JET RECORDING HEAD, PRODUCING METHOD THEREFOR AND COMPOSITION FOR INK JET RECORDING HEAD 失效
标题翻译：喷墨记录头，喷墨记录头的制作方法及其组合
公开(公告)号：US20100309247A1
公开(公告)日：2010-12-09
申请号：US12857158
申请日：2010-08-16
申请人： Etsuko Hino , Norio Ohkuma , Yoshikazu Saito , Mitsutoshi Noguchi , Helmut Schmidt , Carsten Becker-Willinger , Pamela Kalmes
发明人： Etsuko Hino , Norio Ohkuma , Yoshikazu Saito , Mitsutoshi Noguchi , Helmut Schmidt , Carsten Becker-Willinger , Pamela Kalmes
IPC分类号： B41J2/015
CPC分类号： G03F7/0757 , B41J2/1603 , B41J2/1623 , B41J2/1626 , B41J2/1631 , B41J2/1639 , B41J2/1645 , G03F7/038
摘要： The invention provides a method for producing an ink jet recording head having a high durability and a high ink resistance and enabling a high-quality image recording by employing a material capable of reducing the internal stress and having satisfactory patterning characteristics. It also provide a method of producing such ink jet recording head with a high precision. A cationically photopolymerizable resin composition containing a condensate of a hydrolysable organosilane compound, employed as a material for forming a flow path forming member, enables a reduction of internal stress and a highly precise pattern in the flow path forming member thereby providing an ink jet recording head having a high durability and a high ink resistance and capable of high-quality printing over a prolonged time, and a producing method therefor.
摘要翻译：本发明提供了一种制造具有高耐久性和高油墨电阻的喷墨记录头的方法，并且能够通过采用能够降低内应力并具有令人满意的图案特征的材料进行高质量的图像记录。它还提供了一种以高精度制造这种喷墨记录头的方法。作为用于形成流路形成部件的材料的含有可水解的有机硅烷化合物的缩合物的阳离子光聚合性树脂组合物能够在流路形成部件中降低内部应力和高精度图案，从而提供喷墨记录头具有高耐久性和高耐油墨性并且能够在长时间内进行高质量印刷及其制造方法。

5. 发明申请

US20100260978A9 Composite Composition for Micropatterned Layers 有权
标题翻译：微图层的复合组成
公开(公告)号：US20100260978A9
公开(公告)日：2010-10-14
申请号：US12373750
申请日：2007-07-11
申请人： Etsuko Hino , Mitsutoshi Noguchi , Norio Ohkuma , Yoshikazu Saito , Carsten Becker-Willinger , Pamela Kalmes , Michael Veith
发明人： Etsuko Hino , Mitsutoshi Noguchi , Norio Ohkuma , Yoshikazu Saito , Carsten Becker-Willinger , Pamela Kalmes , Michael Veith
IPC分类号： B32B3/10 , G03F7/038 , G03F7/20 , G03F7/075
CPC分类号： G03F7/038 , G03F7/0047 , G03F7/0757 , Y10T428/24802 , Y10T428/31663
摘要： The invention provides a composite composition comprising a cationically polymerizable organic resin, a cationic photoinitiator, a hydrolysate and/or condensate of at least one hydrolysable silane compound and inorganic nanoparticles. The composite composition is suitable for the preparation of patterned moulded articles or substrates having a patterned coating, in particular by photolithography. Micropatterns obtained show improved properties, such as a high shape stability and an excellent elastic modulus.
摘要翻译：本发明提供一种复合组合物，其包含阳离子可聚合有机树脂，阳离子光引发剂，至少一种可水解硅烷化合物的水解产物和/或缩合物和无机纳米颗粒。该复合组合物适用于制备具有图案化涂层的图案化模塑制品或基材，特别是通过光刻法。获得的微图案显示出改进的性能，例如高的形状稳定性和优异的弹性模量。

6. 发明授权

US07789490B2 Liquid discharge head and method of manufacturing the same 有权
标题翻译：液体排放头及其制造方法
公开(公告)号：US07789490B2
公开(公告)日：2010-09-07
申请号：US11775994
申请日：2007-07-11
申请人： Yoshikazu Saito , Norio Ohkuma , Etsuko Hino , Mitsutoshi Noguchi
发明人： Yoshikazu Saito , Norio Ohkuma , Etsuko Hino , Mitsutoshi Noguchi
IPC分类号： B41J2/05
CPC分类号： B41J2/1645 , B41J2/1603 , B41J2/1631 , B41J2/1639
摘要： An ink jet recording head can record an image having a high quality level for a long period of time by use of a material having a reduced linear expansion coefficient and a satisfactory patterning characteristic. The liquid discharge head includes an energy generating element which generates energy for discharging a liquid; a discharge port which discharges the liquid; and a flow path forming member to form a flow path which supplies the liquid to the discharge port, the flow path forming member being formed of a cured material of a resin composition including a cationic polymerizable resin, a cationic photopolymerization initiator, a condensation product of hydrolyzable organic silane compounds, and inorganic fine particles having an average particle diameter of 50 nm or less.
摘要翻译：喷墨记录头可以通过使用具有降低的线性膨胀系数和令人满意的图案特征的材料来长时间记录具有高质量水平的图像。液体排出头包括产生排出液体的能量的能量产生元件; 排出液体的排出口; 以及流路形成部件，其形成将液体供给到排出口的流路，所述流路形成部件由包含阳离子可聚合树脂，阳离子光聚合引发剂，阳离子光聚合引发剂的缩合产物的树脂组合物的固化物形成，水解性有机硅烷化合物，平均粒径为50nm以下的无机微粒。

7. 发明申请

US20100159405A1 METHOD OF MANUFACTURING STRUCTURE AND METHOD OF MANUFACTURING INK JET HEAD 审中-公开
标题翻译：制造结构的方法和制造喷墨头的方法
公开(公告)号：US20100159405A1
公开(公告)日：2010-06-24
申请号：US12634214
申请日：2009-12-09
申请人： Hiroe Ishikura , Takumi Suzuki , Tamaki Sato , Hirono Naito , Masafumi Morisue , Yoshikazu Saito , Ryoji Kanri
发明人： Hiroe Ishikura , Takumi Suzuki , Tamaki Sato , Hirono Naito , Masafumi Morisue , Yoshikazu Saito , Ryoji Kanri
IPC分类号： G03F7/20 , C08F2/46
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to the fine pattern manufacturing method of the invention, the residue of a pattern which is obtained by pressing a mold is prevented from occurring, so that the structure can be more easily manufactured.
摘要翻译：根据本发明的精细图案制造方法，可以防止发生通过按压模具得到的图案的残留物，从而可以更容易地制造结构。

8. 发明授权

US07692943B2 Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells 失效
标题翻译：半导体存储器件布局包括用于向N个井和P井提供井电压的高杂质阱抽头区域
公开(公告)号：US07692943B2
公开(公告)日：2010-04-06
申请号：US12000135
申请日：2007-12-10
申请人： Kenichi Osada , Takayuki Kawahara , Ken Yamaguchi , Yoshikazu Saito , Naoki Kitai
发明人： Kenichi Osada , Takayuki Kawahara , Ken Yamaguchi , Yoshikazu Saito , Naoki Kitai
IPC分类号： G11C5/02
CPC分类号： G06F11/1008 , G06F11/108 , G11C5/025 , G11C7/22 , G11C7/24 , G11C8/20 , G11C11/412 , G11C2207/2218 , G11C2207/229 , H01L27/0207 , H01L27/1104
摘要： A semiconductor device includes a plurality of memory cells, and an error-correction circuit. Its write operation is performed by a late-write method, and ECC processing is executed in parallel with writing to shorten a cycle time. Moreover, when a memory cell is power-supplied through a well tap, the same address is not assigned while the memory cell is power-supplied through the well tap.
摘要翻译：半导体器件包括多个存储单元和纠错电路。其写入操作是通过后期写入方式进行的，并且与写入并行执行ECC处理以缩短周期时间。此外，当存储单元通过阱抽头供电时，在存储单元通过井口供电时，不分配相同的地址。

9. 发明申请

US20060028853A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060028853A1
公开(公告)日：2006-02-09
申请号：US11242054
申请日：2005-10-04
申请人： Kenichi Osada , Takayuki Kawahara , Ken Yamaguchi , Yoshikazu Saito , Naoki Kitai
发明人： Kenichi Osada , Takayuki Kawahara , Ken Yamaguchi , Yoshikazu Saito , Naoki Kitai
IPC分类号： G11C5/06 , G11C7/00
CPC分类号： G06F11/1008 , G06F11/108 , G11C5/025 , G11C7/22 , G11C7/24 , G11C8/20 , G11C11/412 , G11C2207/2218 , G11C2207/229 , H01L27/0207 , H01L27/1104
摘要： According to one aspect of the present invention, there is provided a semiconductor device comprising a plurality of memory cells, and an error-correction circuit, wherein write operation is performed by a late-write method, and ECC processing is executed in parallel with writing, and thereby cycle time is shortened. Moreover, it is better that when a memory cell is power supplied through a well tap, the same address is not assigned while the memory cell is power supplied through the well tap.
摘要翻译：根据本发明的一个方面，提供了一种包括多个存储单元的半导体器件和一个纠错电路，其中写操作是通过后期写入方式执行的，ECC处理与写入并行执行，从而缩短周期时间。此外，当存储单元通过阱抽头供电时，更好的是，当存储单元通过井口供电时，不分配相同的地址。

10. 发明授权

US06208010B1 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US06208010B1
公开(公告)日：2001-03-27
申请号：US08574110
申请日：1995-12-18
申请人： Shinji Nakazato , Hideaki Uchida , Yoshikazu Saito , Masahiro Yamamura , Yutaka Kobayashi , Takahide Ikeda , Ryoichi Hori , Goro Kitsukawa , Kiyoo Itoh , Nobuo Tanba , Takao Watanabe , Katsuhiro Shimohigashi , Noriyuki Homma
发明人： Shinji Nakazato , Hideaki Uchida , Yoshikazu Saito , Masahiro Yamamura , Yutaka Kobayashi , Takahide Ikeda , Ryoichi Hori , Goro Kitsukawa , Kiyoo Itoh , Nobuo Tanba , Takao Watanabe , Katsuhiro Shimohigashi , Noriyuki Homma
IPC分类号： H01L2900
CPC分类号： H01L27/10805 , H01L27/0214 , H01L27/0218 , H01L27/0623 , H01L27/0922 , H01L27/105 , Y10S257/901 , Y10S257/904
摘要： Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements. As a second aspect of the present invention, first carrier absorbing areas (to absorb minority carriers) are located between the memory array and the switching circuit of the peripheral circuit, and second carrier absorbing areas are provided to surround input protective elements of the device. As a third embodiment of the present invention, a plurality of isolation regions of the same conductivity type are provided, with unequal voltages applied to these isolation regions, or unequal voltages applied to the substrate, on the one hand, and to these isolation regions, on the other.
摘要翻译：公开了一种半导体器件，例如半导体存储器件，其结构可以避免少数载流子从半导体衬底侵入形成在衬底上的器件的部件。半导体存储器件例如可以是SRAM或DRAM，并且在衬底上包括存储器阵列和外围电路。在本发明的一个方面中，在外围电路和存储器阵列中的至少一个之下提供与衬底相同的导电类型但具有比衬底的杂质浓度更高的杂质浓度的掩埋层。另外的区域可以例如从掩埋层延伸到半导体衬底的表面，掩埋层和组合的另外的区域用作屏蔽以防止少数载流子穿透到器件元件。作为本发明的第二方面，第一载流子吸收区域（以吸收少数载流子）位于存储器阵列和外围电路的开关电路之间，并且第二载流子吸收区域被设置为环绕该器件的输入保护元件。作为本发明的第三实施例，提供了相同导电类型的多个隔离区域，一方面施加到这些隔离区域的不同电压或施加到基板的不同电压以及这些隔离区域，在另一。

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