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1. 发明授权

US07306002B2 System and method for wet cleaning a semiconductor wafer 失效
标题翻译：用于湿式清洗半导体晶片的系统和方法
公开(公告)号：US07306002B2
公开(公告)日：2007-12-11
申请号：US10336631
申请日：2003-01-04
申请人： Yong Bae Kim , Jungyup Kim , Yong Ho Lee , In Kwon Jeong
发明人： Yong Bae Kim , Jungyup Kim , Yong Ho Lee , In Kwon Jeong
IPC分类号： B08B3/12
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/12 , B08B11/02
摘要： A system and method for cleaning a substrate, such as a semiconductor wafer, utilizes a rotatable wafer supporting assembly with a cylindrical body to provide stability for the substrate being cleaned, even at high rotational speeds. The rotatable wafer supporting assembly may include wafer holding mechanisms with pivotable confining members that are configured to hold the substrate using centrifugal force when the wafer supporting assembly is rotated. In an embodiment, the cleaning system may include a positioning system operatively connected to an acoustic transducer to provide meaningful control of the acoustic energy applied to a surface of the substrate by selectively changing the distance between the acoustic transducer and the substrate surface so that the substrate can be cleaned more effectively.
摘要翻译：用于清洁诸如半导体晶片的衬底的系统和方法利用具有圆柱形主体的可旋转晶片支撑组件来提供即使在高转速下被清洁衬底的稳定性。可旋转晶片支撑组件可以包括具有可枢转的限制构件的晶片保持机构，其被配置为当晶片支撑组件旋转时使用离心力来保持衬底。在一个实施例中，清洁系统可以包括可操作地连接到声换能器的定位系统，以通过选择性地改变声换能器和衬底表面之间的距离来提供施加到衬底表面的声能的有意义的控制，使得衬底可以更有效地清洗。

2. 发明授权

US07258124B2 Apparatus and method for treating surfaces of semiconductor wafers using ozone 失效
标题翻译：使用臭氧处理半导体晶片表面的设备和方法
公开(公告)号：US07258124B2
公开(公告)日：2007-08-21
申请号：US11335948
申请日：2006-01-20
申请人： In Kwon Jeong , Yong Bae Kim , Jungyup Kim
发明人： In Kwon Jeong , Yong Bae Kim , Jungyup Kim
IPC分类号： B08B3/00
CPC分类号： H01L21/02046 , B08B3/02 , B08B3/08 , B08B2203/005 , H01L21/02238 , H01L21/31662 , H01L21/67051
摘要： An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.
摘要翻译：用诸如臭氧的反应性气体处理半导体晶片的表面的设备和方法利用从气体喷嘴结构喷出的气态物流，以在半导体晶片表面上形成的处理流体的边界层上形成凹坑，增加通过边界层到达晶片表面的反应气体的量。该设备和方法可用于通过氧化来清洁半导体晶片表面和/或在晶片表面上生长氧化物层。

3. 发明授权

US07051743B2 Apparatus and method for cleaning surfaces of semiconductor wafers using ozone 失效
标题翻译：使用臭氧清洗半导体晶片的表面的装置和方法
公开(公告)号：US07051743B2
公开(公告)日：2006-05-30
申请号：US10282562
申请日：2002-10-29
申请人： Yong Bae Kim , In Kwon Jeong , Jungyup Kim
发明人： Yong Bae Kim , In Kwon Jeong , Jungyup Kim
IPC分类号： B08B3/00
CPC分类号： B08B3/02 , B08B2203/005 , Y10S134/902
摘要： An apparatus and method for cleaning surfaces of semiconductor wafers utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of cleaning fluid formed on a semiconductor wafer surface to increase the amount of gaseous material that reaches the wafer surface through the boundary layer.
摘要翻译：用于清洁半导体晶片表面的装置和方法利用从气体喷嘴结构喷出的气态物流，以在半导体晶片表面上形成的清洁流体的边界层上形成凹陷或穿过孔，以增加到达晶片表面通过边界层。

4. 发明授权

US07022193B2 Apparatus and method for treating surfaces of semiconductor wafers using ozone 失效
标题翻译：使用臭氧处理半导体晶片表面的设备和方法
公开(公告)号：US07022193B2
公开(公告)日：2006-04-04
申请号：US10350739
申请日：2003-01-23
申请人： In Kwon Jeong , Yong Bae Kim , Jungyup Kim
发明人： In Kwon Jeong , Yong Bae Kim , Jungyup Kim
IPC分类号： B08B3/00
CPC分类号： H01L21/02046 , B08B3/02 , B08B3/08 , B08B2203/005 , H01L21/02238 , H01L21/31662 , H01L21/67051
摘要： An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.
摘要翻译：用诸如臭氧的反应性气体处理半导体晶片的表面的设备和方法利用从气体喷嘴结构喷出的气态物流，以在半导体晶片表面上形成的处理流体的边界层上形成凹坑，增加通过边界层到达晶片表面的反应气体的量。该设备和方法可用于通过氧化来清洁半导体晶片表面和/或在晶片表面上生长氧化物层。

5. 发明申请

US20130154303A1 SUNVISOR HAVING DAMPER DEVICE 有权
标题翻译：具有阻尼器装置的SUVVISOR
公开(公告)号：US20130154303A1
公开(公告)日：2013-06-20
申请号：US13612304
申请日：2012-09-12
申请人： Yong Bae Kim , Deok Rae Kim
发明人： Yong Bae Kim , Deok Rae Kim
IPC分类号： B60J3/02
CPC分类号： B60J3/0265
摘要： A sunvisor apparatus may include a pivot arm fixed to a headlining, a sunvisor portion rotatably installed at an end portion of the pivot arm, and a damper device installed between the pivot arm and the sunvisor portion to reduce a rotating speed of the sunvisor portion through increasing of a frictional force while the end portion of the pivot arm may be inserted into the damper device.
摘要翻译：遮阳装置可以包括固定到头架的枢转臂，可旋转地安装在枢转臂的端部处的防晒装置，以及安装在枢转臂和防晒部之间的阻尼装置，以减小防晒罩部分通过的旋转速度当枢转臂的端部可以插入阻尼器装置中时摩擦力的增加。

6. 发明授权

US08602480B2 Sunvisor having damper device 有权
标题翻译：遮阳器具有阻尼装置
公开(公告)号：US08602480B2
公开(公告)日：2013-12-10
申请号：US13612304
申请日：2012-09-12
申请人： Yong Bae Kim , Deok Rae Kim
发明人： Yong Bae Kim , Deok Rae Kim
IPC分类号： B60J1/02
CPC分类号： B60J3/0265
摘要： A sunvisor apparatus may include a pivot arm fixed to a headlining, a sunvisor portion rotatably installed at an end portion of the pivot arm, and a damper device installed between the pivot arm and the sunvisor portion to reduce a rotating speed of the sunvisor portion through increasing of a frictional force while the end portion of the pivot arm may be inserted into the damper device.
摘要翻译：遮阳装置可以包括固定到头架的枢转臂，可旋转地安装在枢转臂的端部处的防晒装置，以及安装在枢转臂和防晒部之间的阻尼装置，以减小防晒罩部分通过的旋转速度当枢转臂的端部可以插入阻尼器装置中时摩擦力的增加。

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