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    • 5. 发明申请
    • Methods of measuring critical dimensions and related devices
    • 测量关键尺寸和相关设备的方法
    • US20070292778A1
    • 2007-12-20
    • US11811979
    • 2007-06-13
    • Kyoung-Yoon BangHae-Young JeongYong-Hoon KimYo-Han ChoiHyung-Joo Lee
    • Kyoung-Yoon BangHae-Young JeongYong-Hoon KimYo-Han ChoiHyung-Joo Lee
    • G03C5/00G06K9/00G01B11/00
    • G01B11/24G03F7/70625G06T7/001G06T2207/30148
    • A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.
    • 测量临界尺寸的方法可以包括在衬底上形成对象图案并在衬底上形成多个参考图案,其中多个参考图案中的每一个具有不同的临界尺寸。 可以测量多个参考图案中的每一个的光学特性以为每个参考图案提供相应的测量光学特性,并且可以测量对象图案的光学特性以提供对象图案的测量光学特性。 可以将对象图案的测量光学性质与参考图案的测量光学性质进行比较,并且可以将对象图案的临界尺寸确定为与具有测量的光学性质的参考图案的临界尺寸相同, 最接近被测物体图案的光学特性。 还讨论了相关设备。