专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08466041B2 Method for manufacturing lamination type semiconductor integrated device 有权
标题翻译：叠层型半导体集成器件的制造方法
公开(公告)号：US08466041B2
公开(公告)日：2013-06-18
申请号：US12950308
申请日：2010-11-19
申请人： Yasuyoshi Kuroda , Kazunori Kondo , Hideto Kato
发明人： Yasuyoshi Kuroda , Kazunori Kondo , Hideto Kato
IPC分类号： H01L21/762
CPC分类号： H01L21/76898 , H01L21/6835 , H01L21/6836 , H01L23/544 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2223/54433 , H01L2223/54473 , H01L2224/11003 , H01L2224/81001 , H01L2224/81801 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01067 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： Provided is a method for manufacturing a lamination type semiconductor integrated device that can simultaneously attain grinding force resistance during back side grinding of a semiconductor wafer, heat resistance during anisotropic dry etching and the like, chemical resistance during plating and etching, smooth debonding of a support substrate for processing at the end, and low adherend staining; the method comprises at least a step of back side grinding of a first semiconductor wafer having a device formed on its surface and a step of laminating by electrical bonding the first semiconductor wafer with a second semiconductor wafer having a device formed on its surface, wherein, at the time of back side grinding of the first semiconductor wafer, back of the first semiconductor wafer is ground after surface of formed device on the first semiconductor wafer is bonded to a support substrate for processing by using a pressure-sensitive silicone adhesive.
摘要翻译：本发明提供一种能够同时获得半导体晶片的后侧研磨期间的耐磨性，各向异性干法蚀刻等期间的耐热性，电镀和蚀刻时的耐化学性，支持体的平滑脱粘的层叠型半导体一体化装置的制造方法底物加工结束，低粘附染色; 所述方法至少包括在其表面上形成有器件的第一半导体晶片的后侧研磨和通过将第一半导体晶片与其表面上形成有器件的第二半导体晶片电接合的步骤，在第一半导体晶片的背面研磨时，第一半导体晶片的背面在第一半导体晶片上的成形器件的表面通过使用压敏硅胶粘合剂结合到用于处理的支撑衬底上之后被研磨。

2. 发明申请

US20110111217A1 SILICONE BASE PRESSURE-SENSITIVE ADHESIVE COMPOSITION AND FILM 审中-公开
标题翻译：硅胶基压敏粘合剂组合物和薄膜
公开(公告)号：US20110111217A1
公开(公告)日：2011-05-12
申请号：US12911262
申请日：2010-10-25
申请人： Yasuyoshi KURODA , Shunji AOKI
发明人： Yasuyoshi KURODA , Shunji AOKI
IPC分类号： C09J7/02 , B32B9/00 , C09J183/04
CPC分类号： C09J183/04 , C08G77/12 , C08G77/20 , C08L83/00 , C09J7/38 , C09J2201/606 , C09J2203/318 , C09J2203/326 , C09J2483/00 , G02F2202/28 , H01L2924/00013 , Y10T428/269 , Y10T428/2809 , Y10T428/2852 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A pressure-sensitive adhesive film comprising an adhesive layer on a substrate is provided. The layer is made of a silicone composition comprising (A) a diorganopolysiloxane having at least two alkenyl and phenyl groups, (B) an organopolysiloxane comprising R13SiO0.5 and SiO2 units, (C) an organohydrogenpolysiloxane containing at least three SiH groups, (D) a retarder, (E) an addition reaction catalyst, and (F) an organic solvent. The PSA film can be applied to a member without entrapping bubbles. After applied, the PSA film does not slide or peel on its own, but can be easily peeled by hand.
摘要翻译：提供了在基板上具有粘接层的压敏粘合膜。该层由含有（A）具有至少两个烯基和苯基的二有机聚硅氧烷，（B）包含R 13 SiO 0.5和SiO 2单元的有机聚硅氧烷，（C）含有至少三个SiH基团的有机氢聚硅氧烷（D））缓凝剂，（E）加成反应催化剂和（F）有机溶剂。可以将PSA膜施加到构件上而不夹带气泡。施用后，PSA膜本身不会滑动或剥离，但可以容易地用手剥离。

3. 发明申请

US20090012218A1 SILICONE PRESSURE-SENSITIVE ADHESIVE COMPOSITION HAVING ANTISTATIC PERFORMANCE AND SILICONE PRESSURE-SENSITIVE ADHESIVE TAPE 审中-公开
标题翻译：具有防静电性能的硅胶压敏粘合剂组合物和硅氧烷压敏粘合胶带
公开(公告)号：US20090012218A1
公开(公告)日：2009-01-08
申请号：US12167608
申请日：2008-07-03
申请人： Yasuyoshi KURODA
发明人： Yasuyoshi KURODA
IPC分类号： C08G77/04 , C08K3/38 , C08K3/32 , C08K3/16 , C08K5/36
CPC分类号： C08K3/24 , C08G77/12 , C08G77/20 , C08K5/43 , C08L83/00 , C08L83/04 , C09J183/04
摘要： A transparent silicone pressure-sensitive adhesive composition that exhibits excellent antistatic performance, is able to maintain that excellent antistatic performance even when exposed to high temperatures for a long time, and suffers no deterioration in adhesive properties, as well as a silicone pressure-sensitive adhesive tape that uses the composition. The composition comprises: (A) a straight-chain diorganopolysiloxane, (B) a polyorganosiloxane comprising R13SiO0.5 units and SiO2 units, in which the molar ratio of R13SiO0.5 units/SiO2 units is within a range from 0.6 to 1.7 (wherein R1 represents a monovalent hydrocarbon group of 1 to 10 carbon atoms), and (C) an ion-conductive antistatic agent, wherein the quantity of the ion-conductive antistatic agent of the component (C) is within a range from 0.01 to 5 parts by mass per 100 parts by mass of a combination of the straight-chain diorganopolysiloxane of the component (A) and the polyorganosiloxane of the component (B).
摘要翻译：具有优异的抗静电性能的透明硅氧烷粘合剂组合物即使长时间暴露于高温下也能够保持优异的抗静电性能，并且不会劣化粘合剂性能以及硅氧烷压敏粘合剂使用组合的磁带。该组合物包含：（A）直链二有机聚硅氧烷，（B）包含R 13 SiO 0.5单元和SiO 2单元的聚有机硅氧烷，其中R 13 SiO 0.5单元/ SiO 2单元的摩尔比在0.6至1.7的范围内（其中 R1表示1〜10个碳原子的一价烃基）和（C）离子传导性抗静电剂，其中，（C）成分的离子传导性抗静电剂的量在0.01〜5份的范围内（A）的直链二有机聚硅氧烷与（B）成分的聚有机硅氧烷的组合相对于100质量份。

4. 发明授权

US06756127B2 Primer composition for silicone pressure-sensitive adhesives 失效
标题翻译：硅胶压敏粘合剂的底漆组合物
公开(公告)号：US06756127B2
公开(公告)日：2004-06-29
申请号：US10269001
申请日：2002-10-11
申请人： Yasuyoshi Kuroda , Shunji Aoki , Masahiko Ogawa
发明人： Yasuyoshi Kuroda , Shunji Aoki , Masahiko Ogawa
IPC分类号： B32B2520
CPC分类号： C08K5/541 , C08K5/1539 , C09D183/04 , C09J7/50 , C09J2423/006 , C09J2479/086 , C09J2481/006 , C09J2483/00 , C09J2483/003 , Y10T428/31663 , C08L83/04 , C08L83/00 , C08L2666/34 , C08L2666/28
摘要： A primer composition comprising (A) a diorganopolysiloxane having an average degree of polymerization of 500-2,000 and alkenyl groups at both ends of its molecular chain in an amount of 0.001-0.005 mol per 100 g of the diorganopolysiloxane, (B) an organohydrogenpolysiloxane having at least two SiH groups in a molecule, (C) a platinum base curing catalyst, and (D) a retarder is effective for improving the adhesion between various plastic films and silicone pressure-sensitive adhesives and thus forming satisfactory pressure-sensitive adhesive tapes.
摘要翻译：一种底漆组合物，其包含（A）平均聚合度为500-2,000的二有机聚硅氧烷和其分子链两端的烯基的量为每100克二有机聚硅氧烷为0.001-0.005摩尔，（B）有机氢聚硅氧烷，其具有分子中的至少两个SiH基团，（C）铂基固化催化剂和（D）延迟剂对于改善各种塑料膜和硅氧烷压敏粘合剂之间的粘附性是有效的，因此形成令人满意的压敏粘合带。

5. 发明申请

US20060172140A1 Silicone pressure sensitive adhesive composition and a pressure sensitive adhesive tape thereof 审中-公开
标题翻译：硅氧烷压敏粘合剂组合物及其压敏粘合带
公开(公告)号：US20060172140A1
公开(公告)日：2006-08-03
申请号：US11345327
申请日：2006-02-02
申请人： Yasuyoshi Kuroda , Shunji Aoki
发明人： Yasuyoshi Kuroda , Shunji Aoki
IPC分类号： B32B27/00 , C08L83/04 , B32B37/00
CPC分类号： C09J183/04 , C08L83/00 , C09J7/38 , C09J2483/00 , Y10T428/31663
摘要： A silicone composition for use as a pressure sensitive adhesive, comprising a mixture obtained by reacting (A) a polyorganosiloxane having at least two alkenyl groups per molecule with (B) a polyorganosiloxane having an R13SiO0.5 unit and a SiO2 unit, wherein R1 may be the same with or different from each other and is a monovalent hydrocarbon group having 1 to 10 carbon atoms, (C) a polyorganosiloxane having an SiH group, (D) a retarder and (E) a platinum group metal catalyst. A pressure sensitive adhesive tape made from the composition can be peeled off from an object without leaving adhesive residue even after aged at a temperature of 250° C. or higher.
摘要翻译：一种用作压敏粘合剂的硅氧烷组合物，其包含通过使（A）每分子具有至少两个烯基的聚有机硅氧烷与（B）具有R 1的聚有机硅氧烷反应获得的混合物， 3 0.5 单元和SiO 2单元，其中R 1彼此可以相同或不同，并且是具有1〜10个碳原子的一价烃基，（C）具有SiH基的聚有机硅氧烷，（D）延迟剂和（E）铂族金属催化剂。即使在250℃或更高的温度下老化之后，也可以将由该组合物制成的压敏粘合带从物体上剥离而不留下粘合残留物。

6. 发明授权

US5928066A Apparatus for polishing peripheral portion of wafer 失效
标题翻译：用于抛光晶片周边部分的装置
公开(公告)号：US5928066A
公开(公告)日：1999-07-27
申请号：US993989
申请日：1997-12-18
申请人： Fumihiko Hasegawa , Yasuyoshi Kuroda , Toshihiro Tsuchiya , Koichiro Ichikawa , Yasuo Inada
发明人： Fumihiko Hasegawa , Yasuyoshi Kuroda , Toshihiro Tsuchiya , Koichiro Ichikawa , Yasuo Inada
IPC分类号： B24B9/06 , B24D9/06 , B24B5/00
CPC分类号： B24D9/06 , B24B9/065
摘要： A polishing apparatus of a peripheral chamfered portion of a semiconductor wafer is disclosed. The polishing apparatus comprises: a rotary drum around the periphery of which a tape having an abrasive layer thereon is wound; a first motor for rotating the rotary drum; a wafer holding mechanism which comprises a wafer holding member for holding a wafer, a second motor for rotating the wafer holding member, a supporting member for supporting the wafer holding member and the second motor, and a wafer inclining member for changing the tilt angle of the wafer with respect to the rotary drum by reciprocally rotating the supporting member on a first axis which is substantially parallel with the main surface of the wafer; and a moving member for bringing the wafer held on the supporting member into contact with or separating it from the tape wound around the rotary drum.
摘要翻译：公开了半导体晶片的外围倒角部分的抛光装置。抛光装置包括：围绕其周边的旋转鼓，其上缠绕有其上的研磨层的带; 用于旋转所述旋转滚筒的第一马达; 晶片保持机构，其包括用于保持晶片的晶片保持部件，用于旋转晶片保持部件的第二电动机，用于支撑晶片保持部件和第二电动机的支撑部件，以及用于改变晶片保持部件的倾斜角度的晶片倾斜部件所述晶片相对于所述旋转鼓通过使所述支撑构件在基本上平行于所述晶片的主表面的第一轴线上往复旋转; 以及移动构件，用于使保持在支撑构件上的晶片与缠绕在旋转鼓上的带接触或分离。

7. 发明授权

US5733181A Apparatus for polishing the notch of a wafer 失效
标题翻译：用于抛光晶片凹口的装置
公开(公告)号：US5733181A
公开(公告)日：1998-03-31
申请号：US329952
申请日：1994-10-27
申请人： Fumihiko Hasegawa , Tatsuo Ohtani , Yasuyoshi Kuroda , Koichiro Ichikawa , Yasuo Inada
发明人： Fumihiko Hasegawa , Tatsuo Ohtani , Yasuyoshi Kuroda , Koichiro Ichikawa , Yasuo Inada
IPC分类号： B24B1/04 , B24B9/00 , B24B9/06 , B24B21/00 , B24B21/22 , H01L21/304 , B24B7/00
CPC分类号： B24B21/002 , B24B9/065
摘要： An apparatus for polishing the notch of a wafer in an effective and efficient way, which comprises: a flexible tape carrying abrasive grains in the working face thereof; an infeed reel for feeding the tape stored thereon: a take-up reel for taking up the tape fed from the infeed reel; a motor for driving to rotate the take-up reel; a means for blowing a fluid to the backside surface to the edge portion of the notch to be in direct contact along the full periphery of the notch; and a means for oscillating the tape sideways.
摘要翻译：一种用于以有效和有效的方式抛光晶片的凹口的装置，其包括：在其工作面中承载磨料颗粒的柔性带; 用于馈送存储在其上的带的进给卷轴;卷取卷轴，用于卷取从进料卷轴进给的带; 用于驱动旋转卷取卷轴的马达; 用于将流体吹送到所述凹口的所述边缘部分的所述后侧表面沿着所述凹口的整个周边直接接触的装置; 以及用于横向摆动带的装置。

8. 发明授权

US5476413A Apparatus for polishing the periphery portion of a wafer 失效
标题翻译：用于抛光晶圆周边部分的装置
公开(公告)号：US5476413A
公开(公告)日：1995-12-19
申请号：US306439
申请日：1994-09-19
申请人： Fumihiko Hasegawa , Tatsuo Ohtani , Yasuyoshi Kuroda , Koichiro Ichikawa , Yasuo Inada
发明人： Fumihiko Hasegawa , Tatsuo Ohtani , Yasuyoshi Kuroda , Koichiro Ichikawa , Yasuo Inada
IPC分类号： B24B9/00 , B24B9/06 , B24B21/00 , B24D9/06 , H01L21/304
CPC分类号： B24B9/065 , B24B21/002 , B24B21/004 , B24D9/06
摘要： An apparatus for polishing the periphery portion of a wafer, by which improvement on the polishing velocity may be effected and besides a more efficient spatial usage of the working layer of an abrasive tape is capable, comprising a tape holding fixed abrasive grains thereon; a feed reel for feeding the tape stored by winding itself; a take-up reel for taking up the tape by winding itself; a rotary drum inside of which both of the reels are equipped in such a manner that they are mountable or demountable, where a portion of the tape in the way from the feed reel to the take-up reel is adaptive to wind the rotary drum around the outer cylindrical surface thereof in close contact in the shape of a helicoid and one of the main faces of the wafer is positioned to be in a plane intersecting the central axis of the rotary drum at an angle.
摘要翻译：抛光晶片周边部分的装置可以进行研磨速度的改善，并且除了可以更有效地利用砂带工作层的空间使用之外，还包括在其上保持固定磨粒的带; 用于馈送通过缠绕自身而存储的带的馈送卷轴; 用于卷绕磁带的卷取卷轴; 其中两个卷盘的两个卷轴被安装成可安装或拆卸的旋转滚筒，其中从进给卷轴到卷取卷轴的带的一部分适于卷绕旋转滚筒其圆柱形表面紧密接触螺旋形状并且晶片的主面之一被定位成与旋转鼓的中心轴线成一定角度的平面。

9. 发明授权

US5404678A Wafer chamfer polishing apparatus with rotary circular dividing table 失效
标题翻译：晶圆倒角抛光装置带旋转圆形分割台
公开(公告)号：US5404678A
公开(公告)日：1995-04-11
申请号：US72776
申请日：1993-06-07
申请人： Fumihiko Hasegawa , Tatsuo Ohtani , Yasuyoshi Kuroda
发明人： Fumihiko Hasegawa , Tatsuo Ohtani , Yasuyoshi Kuroda
IPC分类号： H01L21/304 , B24B9/00 , B24B9/06 , B24B27/00 , B24B41/00 , B24B41/06 , B25B5/00
CPC分类号： B24B9/065 , B24B27/0023 , B24B41/005
摘要： A wafer chamfer polishing apparatus with a rotary circular dividing table, wherein the vacuum pump for pneumatically activating the wafer suction cups is mounted on an integral part of the rotary circular dividing table and the drive motors for dynamically activating the wafer suction cups are installed on an independent stationary body.
摘要翻译：具有旋转圆形分割台的晶片倒角抛光装置，其中用于气动激活晶片吸盘的真空泵安装在旋转圆形分割台的一体部分上，用于动态启动晶片吸盘的驱动马达安装在独立静止体。

10. 发明申请

US20110136321A1 METHOD FOR MANUFACTURING LAMINATION TYPE SEMICONDUCTOR INTEGRATED DEVICE 有权
标题翻译：用于制造层压型半导体集成器件的方法
公开(公告)号：US20110136321A1
公开(公告)日：2011-06-09
申请号：US12950308
申请日：2010-11-19
申请人： Yasuyoshi KURODA , Kazunori KONDO , Hideto KATO
发明人： Yasuyoshi KURODA , Kazunori KONDO , Hideto KATO
IPC分类号： H01L21/762
CPC分类号： H01L21/76898 , H01L21/6835 , H01L21/6836 , H01L23/544 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2223/54433 , H01L2223/54473 , H01L2224/11003 , H01L2224/81001 , H01L2224/81801 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01067 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： Provided is a method for manufacturing a lamination type semiconductor integrated device that can simultaneously attain grinding force resistance during back side grinding of a semiconductor wafer, heat resistance during anisotropic dry etching and the like, chemical resistance during plating and etching, smooth debonding of a support substrate for processing at the end, and low adherend staining; the method comprises at least a step of back side grinding of a first semiconductor wafer having a device formed on its surface and a step of laminating by electrical bonding the first semiconductor wafer with a second semiconductor wafer having a device formed on its surface, wherein, at the time of back side grinding of the first semiconductor wafer, back of the first semiconductor wafer is ground after surface of formed device on the first semiconductor wafer is bonded to a support substrate for processing by using a pressure-sensitive silicone adhesive.
摘要翻译：本发明提供一种能够同时获得半导体晶片的后侧研磨期间的耐磨性，各向异性干法蚀刻等期间的耐热性，电镀和蚀刻时的耐化学性，支持体的平滑脱粘的层叠型半导体一体化装置的制造方法底物加工结束，低粘附染色; 所述方法至少包括在其表面上形成有器件的第一半导体晶片的后侧研磨和通过将第一半导体晶片与其表面上形成有器件的第二半导体晶片电接合的步骤，在第一半导体晶片的背面研磨时，第一半导体晶片的背面在第一半导体晶片上的成形器件的表面通过使用压敏硅胶粘合剂结合到用于处理的支撑衬底上之后被研磨。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式