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    • 1. 发明申请
    • Process for producing indole compoud
    • 生产吲哚化合物的方法
    • US20100197938A1
    • 2010-08-05
    • US12662172
    • 2010-04-02
    • Yasuhiro SakuraiTomohisa UtsunomiyaNorio Tanaka
    • Yasuhiro SakuraiTomohisa UtsunomiyaNorio Tanaka
    • C07D209/12C07D209/08C07D209/42
    • C07D209/04B01J31/24
    • There is provided a novel process for producing an indole derivative which comprises cyclizing 2-nitrobenzylcarbony compound in the presence of a catalyst comprising a Group VIII metal of the Periodic Table, characterized by conducting the cyclization in a gas atmosphere containing carbon monoxide. The process enables an indole compound to be selectively produced in a high yield from 2-nitrobenzylcarbonyl compound, and hardly yields an indoline compound as a reduction by-product that has been a problem in the catalytic hydrogenation method employing a noble metal catalyst. The indole derivative produced by the present process is useful for various fine chemical intermediates including compounds and physiologically active substances such as pharmaceuticals and agrochemicals.
    • 提供了一种制备吲哚衍生物的新方法,其包括在包含元素周期表第Ⅷ族金属的催化剂存在下环化2-硝基苄基羰基化合物,其特征在于在含有一氧化碳的气体气氛中进行环化。 该方法能够以2-硝基苄基羰基化合物高产率选择性地制备吲哚化合物,并且几乎不产生作为使用贵金属催化剂的催化氢化方法中的问题的还原副产物的二氢吲哚化合物。 通过本方法制备的吲哚衍生物可用于各种精细化学中间体,包括化合物和生理活性物质如药物和农用化学品。
    • 3. 发明申请
    • Process for producing indole compound
    • 吲哚化合物的制备方法
    • US20070083053A1
    • 2007-04-12
    • US10562115
    • 2004-06-25
    • Yasuhiro SakuraiTomohisa UtsunomiyaNorio Tanaka
    • Yasuhiro SakuraiTomohisa UtsunomiyaNorio Tanaka
    • C07D209/04
    • C07D209/04B01J31/24
    • There is provided a novel process for producing an indole derivative which comprises cyclizing 2-nitrobenzylcarbony compound in the presence of a catalyst comprising a Group VIII metal of the Periodic Table, characterized by conducting the cyclization in a gas atmosphere containing carbon monoxide. The process enables an indole compound to be selectively produced in a high yield from 2-nitrobenzylcarbonyl compound, and hardly yields an indoline compound as a reduction by-product that has been a problem in the catalytic hydrogenation method employing a noble metal catalyst. The indole derivative produced by the present process is useful for various fine chemical intermediates including compounds and physiologically active substances such as pharmaceuticals and agrochemicals.
    • 提供了一种制备吲哚衍生物的新方法,其包括在包含元素周期表第Ⅷ族金属的催化剂存在下环化2-硝基苄基羰基化合物,其特征在于在含有一氧化碳的气体气氛中进行环化。 该方法能够以2-硝基苄基羰基化合物高产率选择性地制备吲哚化合物,并且几乎不产生作为使用贵金属催化剂的催化氢化方法中的问题的还原副产物的二氢吲哚化合物。 通过本方法制备的吲哚衍生物可用于各种精细化学中间体,包括化合物和生理活性物质如药物和农用化学品。
    • 4. 发明授权
    • Temperature compensation type quartz oscillator
    • 温度补偿型石英振荡器
    • US5801596A
    • 1998-09-01
    • US765459
    • 1997-01-23
    • Yasuhiro Sakurai
    • Yasuhiro Sakurai
    • H03B5/32H03B5/36H03K3/011H03K3/03H03L1/02H03L7/00
    • H03B5/36H03K3/011H03K3/0307H03L1/026H03B5/32H03L1/028
    • A quartz oscillation unit is constituted of a parallel circuit of a quartz oscillator (1), an oscillation inverter (3) and a feedback resistor (5), and a fixed capacitor (15) for temperature compensation and a MOS resistor (17) for temperature compensation are connected in series between one of the terminals of the parallel circuit and a power supply. A fixed capacitor (19) for external frequency control and a MOS resistor (21) for external frequency control are connected in series between the other terminal of the parallel circuit and the power supply. Further, the gate of the temperature compensation MOS resistor (17) is connected to temperature compensation voltage generation unit (4) comprising a temperature information generation section (7), a D/A converter (9) and an integrator (11), and the gate of the external frequency control MOS resistor (21) is connected to an external voltage input terminal (13). In this way is formed a temperature compensation type quartz oscillator. Accordingly, almost all the components of this means can be easily incorporated in a semiconductor integrated circuit.
    • PCT No.PCT / JP95 / 01501 Sec。 371日期1997年1月23日 102(e)1997年1月23日PCT PCT 1995年7月27日PCT公布。 出版物WO96 / 03799 日期:1996年2月8日石英振荡单元由石英振荡器(1),振荡逆变器(3)和反馈电阻(5)的并联电路和用于温度补偿的固定电容器(15)和MOS 用于温度补偿的电阻器(17)串联在并联电路的一个端子和电源之间。 用于外部频率控制的固定电容器(19)和用于外部频率控制的MOS电阻器(21)串联连接在并联电路的另一个端子和电源之间。 此外,温度补偿MOS电阻器(17)的栅极连接到包括温度信息生成部(7),D / A转换器(9)和积分器(11)的温度补偿电压生成单元(4),以及 外部频率控制MOS电阻(21)的栅极连接到外部电压输入端子(13)。 这样形成了一种温度补偿型石英振荡器。 因此,这种装置的几乎所有部件都可以容易地并入到半导体集成电路中。
    • 5. 发明申请
    • Method of manufacturing a temperature compensated oscillator
    • 制造温度补偿振荡器的方法
    • US20070030084A1
    • 2007-02-08
    • US11544622
    • 2006-10-10
    • Yasuhiro Sakurai
    • Yasuhiro Sakurai
    • H03L1/00
    • H03L7/183H03L1/026H03L1/027H03L7/18
    • A method of manufacturing a temperature compensated oscillator including the steps of assembling an oscillator in which an IC chip constituting a temperature compensation circuit with an oscillation circuit and a compensation data storage circuit, and a resonator for the oscillation circuit are mounted in a package; adjusting the resonator with an oscillation frequency of the oscillation circuit to a desired oscillation frequency in condition that the oscillator is kept at a reference temperature, in condition that a temperature compensation function of the temperature compensation circuit is disabled; sealing the resonator hermetically; creating temperature compensation data and storing it into the compensation data storage circuit; and enabling the temperature compensation function of the temperature compensation circuit.
    • 一种制造温度补偿振荡器的方法,包括以下步骤:组装其中构成温度补偿电路的IC芯片与振荡电路和补偿数据存储电路的振荡器和用于振荡电路的谐振器的振荡器安装在封装中; 在振荡器保持在基准温度的条件下,在温度补偿电路的温度补偿功能被禁用的条件下,将振荡电路的振荡频率调谐到期望的振荡频率; 气密密封谐振器; 创建温度补偿数据并将其存储到补偿数据存储电路中; 并实现温度补偿电路的温度补偿功能。
    • 6. 发明申请
    • Temperature compensation type oscillator
    • 温度补偿型振荡器
    • US20050040904A1
    • 2005-02-24
    • US10501774
    • 2003-01-20
    • Yasuhiro Sakurai
    • Yasuhiro Sakurai
    • H03B5/32H03B5/04H03L1/02H03L7/18H03L7/183H03L1/00
    • H03L7/183H03L1/026H03L1/027H03L7/18
    • A temperature compensated oscillator includes an oscillation circuit (20), a temperature detection circuit (18), and a temperature compensation circuit (30) for keeping the frequency of the output signal of the oscillation circuit (20) substantially constant based on the temperature detection signal from the temperature detection circuit, in which a selection circuit (40) is provided which selects to enable or disable a temperature compensation function of the temperature compensation circuit (30). Accordingly, in a state in which a quartz crystal, an IC chip, and so on are mounted in a package, the temperature compensation function of the temperature compensation circuit (30) is disabled, the oscillation circuit (20) is operated to accurately adjust the temperature characteristics of the quartz crystal itself, and thereafter operation of creating compensation data and storing it into a memory can be subsequently performed.
    • 温度补偿振荡器包括振荡电路(20),温度检测电路(18)和温度补偿电路(30),用于基于温度检测保持振荡电路(20)的输出信号的频率基本上恒定 来自温度检测电路的信号,其中提供选择电路(40),其选择启用或禁用温度补偿电路(30)的温度补偿功能。 因此,在将石英晶体,IC芯片等安装在封装中的状态下,温度补偿电路(30)的温度补偿功能被禁止,振荡电路(20)被操作以精确地调整 可以随后执行石英晶体本身的温度特性,此后可以进行产生补偿数据并将其存储到存储器中的操作。
    • 7. 发明授权
    • Temperature compensated oscillator using a control voltage generation circuit
    • 使用控制电压发生电路的温度补偿振荡器
    • US06731181B2
    • 2004-05-04
    • US10149419
    • 2002-06-21
    • Hiroyuki FukayamaYasuhiro Sakurai
    • Hiroyuki FukayamaYasuhiro Sakurai
    • H03L100
    • H03B5/04H03B5/32H03B5/368H03L1/026H03L1/028
    • The temperature of an oscillation circuit (47) is detected by a temperature detection circuit (13), a cubic term voltage generation circuit of a control voltage generation circuit (23) generates a cubic term voltage as a control voltage based on an output voltage of the temperature detection circuit (13), and a frequency adjustment circuit (45) changes an oscillation frequency of the oscillation circuit (47) by the control voltage. The cubic term voltage generation circuit includes a first MOS transistor (37) having a source connected to a first power line (25), a second MOS transistor (35) having a source connected to a second power line (26), and digital control voltage division circuits (31, 33) for generating a first and a second gate voltage, respectively based on the output voltage of the temperature detection circuit (13), in which the first and second gate voltages are applied to gates of the first and second MOS transistors (37, 35) respectively, and a connection point (44) where respective drains are commonly connected shall be an output terminal of the control voltage.
    • 振荡电路(47)的温度由温度检测电路(13)检测,控制电压产生电路(23)的立方项电压产生电路产生三次项电压作为基于输出电压 温度检测电路(13)和频率调整电路(45)通过控制电压来改变振荡电路(47)的振荡频率。 三次项电压产生电路包括具有连接到第一电力线(25)的源极的第一MOS晶体管(37),具有连接到第二电力线(26)的源极的第二MOS晶体管(35),以及数字控制 分压电路(31,33),分别基于温度检测电路(13)的输出电压产生第一和第二栅极电压,其中第一和第二栅极电压施加到第一和第二栅极的栅极 MOS晶体管(37,35)和各自的漏极共同连接的连接点(44)为控制电压的输出端子。
    • 9. 发明授权
    • Core member, core assembly, charging port and induction-type charging apparatus
    • 核心部件,核心部件,充电口和感应式充电装置
    • US06424116B1
    • 2002-07-23
    • US09729265
    • 2000-12-05
    • Yasukazu OkuyamaShinichiro ItoYasuhiro Sakurai
    • Yasukazu OkuyamaShinichiro ItoYasuhiro Sakurai
    • H01M1048
    • H01F3/08H01F38/14
    • The present invention provides a core member and a core assembly that realize a compact and lightweight charging port and a compact and lightweight induction-type charging apparatus. A first side end of a bottom plate portion includes inclined side ends receding from the first side end toward a point between a first side end and a second side end and halfway between a third side end and a fourth side end. A middle leg portion extends from a top surface of the bottom plate portion offset toward side ends opposite the first side ends, relative to a center of the bottom plate portion. Two outer leg portions extend from the top surface of the bottom plate portion along side ends other than the first and second side ends, and have top surfaces which are higher than a top surface of the middle leg portion.
    • 本发明提供了一种实现紧凑且轻便的充电口的芯构件和芯组件,以及紧凑且轻便的感应式充电装置。 底板部分的第一侧端部包括从第一侧端部朝向第一侧端部与第二侧端部之间的点离开的倾斜侧端部,并且在第三侧端部与第四侧端部之间的中间。 中部腿部相对于底板部分的中心,从底板部分的顶表面向相对于第一侧端的侧端延伸。 两个外腿部从第一和第二侧端以外的侧端部从底板部的顶面延伸出来,具有高于中部腿部的顶面的顶面。
    • 10. 发明授权
    • Temperature sensor and method of adjusting the same
    • 温度传感器及其调整方法
    • US5993060A
    • 1999-11-30
    • US6932
    • 1998-01-14
    • Yasuhiro Sakurai
    • Yasuhiro Sakurai
    • G01K7/01G01K15/00
    • G01K15/00G01K7/01
    • In a temperature sensor, between a first power supply and a second power supply, there are disposed a resistor group consisting of a plurality of resistors connected in series and a MOS transistor in the form of a temperature transducer, the resistor group being connected in series with the MOS transistor having a drain connected to the resistor group and having a source and a bulk which are connected to the first power supply. The temperature sensor further comprises a switch group consisting of switches for opening and closing the connections between the connection points of the adjacent resistors of the resistor group and the second power supply, an external terminal connected to the drain of the MOS transistor, a temperature-compensated constant voltage generating circuit for generating a gate voltage as an output voltage to the MOS transistor, and a non-volatile memory which stores therein data for adjusting the output voltage from the temperature-compensated constant voltage generating circuit and the state of opening and closing of the switches of the switch group. With the voltage at the second power supply as the reference, the drain voltage at the MOS transistor is output as temperature information to the external terminal.
    • 在温度传感器中,在第一电源和第二电源之间设置由串联连接的多个电阻器和温度传感器形式的MOS晶体管组成的电阻器组,电阻器组串联连接 其中MOS晶体管具有连接到电阻器组的漏极,并且具有连接到第一电源的源极和体积。 温度传感器还包括开关组,该开关组用于打开和闭合电阻器组的相邻电阻器和第二电源的连接点之间的连接,连接到MOS晶体管的漏极的外部端子, 用于产生作为MOS晶体管的输出电压的栅极电压的补偿型恒压产生电路,以及存储用于调节来自温度补偿恒定电压发生电路的输出电压的数据和开闭状态的非易失性存储器 的开关组的开关。 以第二电源电压作为参考,将MOS晶体管的漏极电压作为温度信息输出到外部端子。