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1. 发明授权

US08409353B2 Water cooled gas injector 失效
标题翻译：水冷气体注射器
公开(公告)号：US08409353B2
公开(公告)日：2013-04-02
申请号：US13277385
申请日：2011-10-20
申请人： Yoshitaka Yokota , Sundar Ramamurthy , Vedapuram Achutharaman , Cory Czarnik , Mehran Behdjat , Christopher Olsen
发明人： Yoshitaka Yokota , Sundar Ramamurthy , Vedapuram Achutharaman , Cory Czarnik , Mehran Behdjat , Christopher Olsen
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/31658 , H01L21/31662 , H01L21/67109
摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.
摘要翻译：一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。臭氧发生器能够产生至少70％的臭氧流。臭氧通过水冷却的注射器进入室内，其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行，座。

2. 发明申请

US20110217850A1 METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：氧化半导体器件的方法
公开(公告)号：US20110217850A1
公开(公告)日：2011-09-08
申请号：US13110613
申请日：2011-05-18
申请人： RAJESH MANI , NORMAN TAM , TIMOTHY W. WEIDMAN , YOSHITAKA YOKOTA
发明人： RAJESH MANI , NORMAN TAM , TIMOTHY W. WEIDMAN , YOSHITAKA YOKOTA
IPC分类号： H01L21/314
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02244 , H01L21/02252 , H01L21/28273 , H01L21/31683 , H01L21/32105
摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
摘要翻译：本文提供了在半导体衬底上制造氧化物层的方法。氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层，含有气体或含氮气体。

3. 发明授权

US07951728B2 Method of improving oxide growth rate of selective oxidation processes 有权
标题翻译：提高选择性氧化工艺氧化物生长速率的方法
公开(公告)号：US07951728B2
公开(公告)日：2011-05-31
申请号：US11860161
申请日：2007-09-24
申请人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/00
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译：公开并要求保护半导体器件中含硅材料的选择性氧化的方法。一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。衬底中的其它材料，例如金属和阻挡层，不被氧化。

4. 发明申请

US20100216317A1 Methods for Forming Conformal Oxide Layers on Semiconductor Devices 有权
标题翻译：在半导体器件上形成共形氧化层的方法
公开(公告)号：US20100216317A1
公开(公告)日：2010-08-26
申请号：US12691969
申请日：2010-01-22
申请人： Agus S. Tjandra , Christopher S. Olsen , Johanes F. Swenberg , Yoshitaka Yokota
发明人： Agus S. Tjandra , Christopher S. Olsen , Johanes F. Swenberg , Yoshitaka Yokota
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译：公开了在半导体衬底上形成氧化物层的方法和装置。在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电卡盘和冷却液和气体对流。

5. 发明申请

US20100120245A1 PLASMA AND THERMAL ANNEAL TREATMENT TO IMPROVE OXIDATION RESISTANCE OF METAL-CONTAINING FILMS 审中-公开
标题翻译：等离子体和热退火处理以提高含金属膜的耐氧化性
公开(公告)号：US20100120245A1
公开(公告)日：2010-05-13
申请号：US12267102
申请日：2008-11-07
申请人： Agus Sofian Tjandra , Yoshitaka Yokota , Christopher S. Olsen
发明人： Agus Sofian Tjandra , Yoshitaka Yokota , Christopher S. Olsen
IPC分类号： H01L21/321
CPC分类号： B32B38/0008 , B32B38/0036 , B32B2038/0092 , B32B2309/02 , B32B2309/04 , B32B2309/105 , B32B2319/00 , B32B2457/00 , C23C16/56 , H01L21/28061 , H01L21/28247 , H01L21/28562 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L27/10861 , H01L27/10888 , H01L29/4941 , H01L29/4966 , H01L29/66181
摘要： Method and apparatus are provided for treatment of a deposited material layer. In one embodiment, a method is provided for processing a substrate including depositing a metal-containing layer using an atomic layer deposition technique, exposing the metal-containing layer to a plasma treatment process at a temperature of less than about 200° C., and exposing the metal-containing layer to a thermal anneal process at a temperature of about 600° C. or greater. The plasma treatment process and/or the thermal anneal process may use a nitrating gas, which may form a passivating surface or layer with the metal-containing layer.
摘要翻译：提供了用于处理沉积材料层的方法和装置。在一个实施例中，提供了一种用于处理衬底的方法，包括使用原子层沉积技术沉积含金属层，在小于约200℃的温度下将含金属层暴露于等离子体处理工艺，以及在约600℃或更高的温度下将含金属层暴露于热退火工艺。等离子体处理工艺和/或热退火工艺可以使用硝化气体，其可与含金属层形成钝化表面或层。

6. 发明申请

US20090163042A1 THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
标题翻译：具有改善气体流量分布的热反应器
公开(公告)号：US20090163042A1
公开(公告)日：2009-06-25
申请号：US12339671
申请日：2008-12-19
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： H01L21/263 , A61L2/04
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

7. 发明授权

US09431237B2 Post treatment methods for oxide layers on semiconductor devices 有权
标题翻译：半导体器件上氧化物层的后处理方法
公开(公告)号：US09431237B2
公开(公告)日：2016-08-30
申请号：US12762467
申请日：2010-04-19
申请人： Kai Ma , Christopher S. Olsen , Yoshitaka Yokota
发明人： Kai Ma , Christopher S. Olsen , Yoshitaka Yokota
IPC分类号： H01L21/02 , H01L21/28 , H01L21/3105 , H01L21/316
CPC分类号： H01L21/02164 , H01L21/02252 , H01L21/0234 , H01L21/28247 , H01L21/3105 , H01L21/31654
摘要： Methods and apparatus for post treating an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, the oxide layer is formed by thermal oxidation or plasma oxidation and treated with a plasma comprising helium. The helium-containing plasma may also include hydrogen, neon, argon and combinations thereof. In one or more embodiments, a SiO2 oxide layer is formed on a silicon substrate and treated with a plasma to improve the interface between the silicon substrate and the SiO2 oxide layer.
摘要翻译：公开了用于后处理半导体衬底上的氧化物层的方法和装置。在一个或多个实施方案中，通过热氧化或等离子体氧化形成氧化物层，并用包含氦的等离子体处理。含氦的等离子体还可以包括氢，氖，氩及其组合。在一个或多个实施例中，在硅衬底上形成SiO 2氧化物层并用等离子体处理以改善硅衬底和SiO 2氧化物层之间的界面。

8. 发明授权

US08546271B2 Method of improving oxide growth rate of selective oxidation processes 有权
公开(公告)号：US08546271B2
公开(公告)日：2013-10-01
申请号：US13117931
申请日：2011-05-27
申请人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/02
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

9. 发明授权

US08497193B2 Method of thermally treating silicon with oxygen 失效
标题翻译：用氧热处理硅的方法
公开(公告)号：US08497193B2
公开(公告)日：2013-07-30
申请号：US13165502
申请日：2011-06-21
申请人： Yoshitaka Yokota , Sundar Ramamurthy , Vedapuram Achutharaman , Cory Czarnik , Mehran Behdjat , Christopher Olsen
发明人： Yoshitaka Yokota , Sundar Ramamurthy , Vedapuram Achutharaman , Cory Czarnik , Mehran Behdjat , Christopher Olsen
IPC分类号： H01L21/36 , H01L21/00
CPC分类号： H01L21/67115 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/31658 , H01L21/31662 , H01L21/67109
摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.
摘要翻译：一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。臭氧发生器能够产生至少70％的臭氧流。臭氧通过水冷却的注射器进入室内，其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行，座。

10. 发明授权

US08207044B2 Methods for oxidation of a semiconductor device 有权
标题翻译：氧化半导体器件的方法
公开(公告)号：US08207044B2
公开(公告)日：2012-06-26
申请号：US13110613
申请日：2011-05-18
申请人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
发明人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
IPC分类号： H01L21/331
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02244 , H01L21/02252 , H01L21/28273 , H01L21/31683 , H01L21/32105
摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
摘要翻译：本文提供了在半导体衬底上制造氧化物层的方法。氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层，含有气体或含氮气体。

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