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1. 发明授权

US07897495B2 Formation of epitaxial layer containing silicon and carbon 有权
标题翻译：形成含有硅和碳的外延层
公开(公告)号：US07897495B2
公开(公告)日：2011-03-01
申请号：US11609608
申请日：2006-12-12
申请人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
发明人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
IPC分类号： H01L21/205
CPC分类号： H01L29/7834 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66628 , H01L29/7848
摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
摘要翻译：公开了形成含硅外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

2. 发明申请

US20080138955A1 FORMATION OF EPITAXIAL LAYER CONTAINING SILICON 审中-公开
标题翻译：形成含硅的外延层
公开(公告)号：US20080138955A1
公开(公告)日：2008-06-12
申请号：US11609590
申请日：2006-12-12
申请人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
发明人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/7834 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66628 , H01L29/7848
摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
摘要翻译：公开了形成含硅外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

3. 发明申请

US20080138964A1 Formation of Epitaxial Layer Containing Silicon and Carbon 有权
标题翻译：含硅和碳的外延层的形成
公开(公告)号：US20080138964A1
公开(公告)日：2008-06-12
申请号：US11609608
申请日：2006-12-12
申请人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
发明人： Zhiyuan Ye , Andrew M. Lam , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L29/7834 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66628 , H01L29/7848
摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
摘要翻译：公开了形成含硅外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

4. 发明授权

US09012328B2 Carbon addition for low resistivity in situ doped silicon epitaxy 有权
标题翻译：用于低电阻率原位掺杂硅外延的碳添加
公开(公告)号：US09012328B2
公开(公告)日：2015-04-21
申请号：US13193566
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/311 , H01L21/02 , H01L29/66 , H01L29/78 , H01L21/8238
CPC分类号： H01L29/36 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02664 , H01L21/823814 , H01L29/167 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer including phosphorus and carbon on a substrate, and then forming a second epitaxial layer including phosphorus and carbon on the first epitaxial layer. The second epitaxial layer has a lower phosphorus concentration than the first epitaxial layer, which allows for selective etching of the second epitaxial layer and undesired amorphous silicon or polysilicon deposited during the depositions. The substrate is then exposed to an etchant to remove the second epitaxial layer and undesired amorphous silicon or polysilicon. The carbon present in the first and second epitaxial layers reduces phosphorus diffusion, which allows for higher phosphorus doping concentrations. The increased phosphorus concentrations reduce the resistivity of the final device. The devices include epitaxial layers having a resistivity of less than about 0.381 milliohm-centimeters.
摘要翻译：本发明的实施例一般涉及形成外延层的方法和具有外延层的器件。所述方法通常包括在衬底上形成包括磷和碳的第一外延层，然后在第一外延层上形成包括磷和碳的第二外延层。第二外延层具有比第一外延层更低的磷浓度，其允许在沉积期间沉积的第二外延层和不期望的非晶硅或多晶硅的选择性蚀刻。然后将衬底暴露于蚀刻剂以除去第二外延层和不期望的非晶硅或多晶硅。存在于第一和第二外延层中的碳减少了磷扩散，这允许更高的磷掺杂浓度。增加的磷浓度降低了最终装置的电阻率。这些器件包括具有小于约0.381毫欧姆厘米的电阻率的外延层。

5. 发明授权

US08652945B2 Epitaxy of high tensile silicon alloy for tensile strain applications 有权
标题翻译：用于拉伸应变应用的高强度硅合金的外延
公开(公告)号：US08652945B2
公开(公告)日：2014-02-18
申请号：US13193576
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02532 , H01L21/0257 , H01L21/02576 , H01L21/0262 , H01L29/1054 , H01L29/78
摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.
摘要翻译：本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

6. 发明授权

US07682940B2 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US07682940B2
公开(公告)日：2010-03-23
申请号：US11227974
申请日：2005-09-14
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
摘要翻译：在第一方面，提供了在基板上形成外延膜的第一种方法。第一种方法包括（a）提供基底; （b）将所述衬底暴露于至少硅源，以在所述衬底的至少一部分上形成外延膜; 和（c）将衬底暴露于HCl和Cl2，以蚀刻外延膜和在步骤（b）中形成的任何其它膜。提供了许多其他方面。

7. 发明申请

US20080182075A1 Phosphorus Containing Si Epitaxial Layers in N-Type Source/Drain Junctions 有权
标题翻译：含N型源极/漏极的Si外延层的磷
公开(公告)号：US20080182075A1
公开(公告)日：2008-07-31
申请号：US11957820
申请日：2007-12-17
申请人： Saurabh Chopra , Zhiyuan Ye , Yihwan Kim
发明人： Saurabh Chopra , Zhiyuan Ye , Yihwan Kim
IPC分类号： H01L21/8236 , H01L21/20 , C04B41/50 , B32B3/00
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/66628 , H01L29/7834 , Y10T428/24612
摘要： Methods for formation of epitaxial layers containing n-doped silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source. An epitaxial layer may have considerable tensile stress which may be created in a significant amount by a high concentration of n-dopant. A layer having n-dopant may also have substitutional carbon. Phosphorus as an n-dopant with a high concentration is provided. A substrate having an epitaxial layer with a high level of n-dopant is also disclosed.
摘要翻译：公开了形成含有n掺杂硅的外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施方案中，n掺杂外延层的形成包括将处理室中的衬底暴露于包括硅源，碳源和n-掺杂剂源的沉积气体。外延层可能具有相当大的拉伸应力，这可以通过高浓度的n-掺杂物以显着的量产生。具有n-掺杂剂的层也可以具有取代的碳。提供了作为高浓度的n掺杂剂的磷。还公开了具有高水平的n掺杂剂的外延层的衬底。

8. 发明授权

US09650726B2 Methods and apparatus for deposition processes 有权
公开(公告)号：US09650726B2
公开(公告)日：2017-05-16
申请号：US13028842
申请日：2011-02-16
申请人： Nyi O. Myo , Kevin Bautista , Zhiyuan Ye , Schubert S. Chu , Yihwan Kim
发明人： Nyi O. Myo , Kevin Bautista , Zhiyuan Ye , Schubert S. Chu , Yihwan Kim
IPC分类号： C30B21/02 , C30B25/12 , C23C16/458 , H01L21/687
CPC分类号： C30B25/12 , C23C16/4586 , H01L21/68735 , H01L21/68742
摘要： Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.

9. 发明申请

US20120193623A1 CARBON ADDITION FOR LOW RESISTIVITY IN SITU DOPED SILICON EPITAXY 有权
标题翻译：用于低电阻率的碳添加剂在原位硅胶外延中
公开(公告)号：US20120193623A1
公开(公告)日：2012-08-02
申请号：US13193566
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/36 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02664 , H01L21/823814 , H01L29/167 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer including phosphorus and carbon on a substrate, and then forming a second epitaxial layer including phosphorus and carbon on the first epitaxial layer. The second epitaxial layer has a lower phosphorus concentration than the first epitaxial layer, which allows for selective etching of the second epitaxial layer and undesired amorphous silicon or polysilicon deposited during the depositions. The substrate is then exposed to an etchant to remove the second epitaxial layer and undesired amorphous silicon or polysilicon. The carbon present in the first and second epitaxial layers reduces phosphorus diffusion, which allows for higher phosphorus doping concentrations. The increased phosphorus concentrations reduce the resistivity of the final device. The devices include epitaxial layers having a resistivity of less than about 0.381 milliohm-centimeters.
摘要翻译：本发明的实施例一般涉及形成外延层的方法和具有外延层的器件。所述方法通常包括在衬底上形成包括磷和碳的第一外延层，然后在第一外延层上形成包括磷和碳的第二外延层。第二外延层具有比第一外延层更低的磷浓度，其允许在沉积期间沉积的第二外延层和不期望的非晶硅或多晶硅的选择性蚀刻。然后将衬底暴露于蚀刻剂以除去第二外延层和不期望的非晶硅或多晶硅。存在于第一和第二外延层中的碳减少磷扩散，这允许更高的磷掺杂浓度。增加的磷浓度降低了最终装置的电阻率。这些器件包括具有小于约0.381毫欧姆厘米的电阻率的外延层。

10. 发明申请

US20110230036A1 USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION 有权
标题翻译：在硅胶膜形成过程中使用CL2和/或HCL
公开(公告)号：US20110230036A1
公开(公告)日：2011-09-22
申请号：US13149865
申请日：2011-05-31
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

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