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1. 发明授权

US07960256B2 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US07960256B2
公开(公告)日：2011-06-14
申请号：US12779022
申请日：2010-05-12
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

2. 发明申请

US20100221902A1 USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION 有权
标题翻译：在硅胶膜形成过程中使用CL2和/或HCL
公开(公告)号：US20100221902A1
公开(公告)日：2010-09-02
申请号：US12779022
申请日：2010-05-12
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

3. 发明申请

US20110230036A1 USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION 有权
标题翻译：在硅胶膜形成过程中使用CL2和/或HCL
公开(公告)号：US20110230036A1
公开(公告)日：2011-09-22
申请号：US13149865
申请日：2011-05-31
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

4. 发明授权

US07682940B2 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US07682940B2
公开(公告)日：2010-03-23
申请号：US11227974
申请日：2005-09-14
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
摘要翻译：在第一方面，提供了在基板上形成外延膜的第一种方法。第一种方法包括（a）提供基底; （b）将所述衬底暴露于至少硅源，以在所述衬底的至少一部分上形成外延膜; 和（c）将衬底暴露于HCl和Cl2，以蚀刻外延膜和在步骤（b）中形成的任何其它膜。提供了许多其他方面。

5. 发明授权

US08586456B2 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US08586456B2
公开(公告)日：2013-11-19
申请号：US13149865
申请日：2011-05-31
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： C23C16/24 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

6. 发明授权

US07732305B2 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US07732305B2
公开(公告)日：2010-06-08
申请号：US11494903
申请日：2006-07-28
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas C. Dalida , Jinsong Tang , Xiao Chen , Arkadii V. Samoilov
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

7. 发明申请

US20060260538A1 Use of Cl2 and/or HCl during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用Cl2和/或HCl
公开(公告)号：US20060260538A1
公开(公告)日：2006-11-23
申请号：US11494903
申请日：2006-07-28
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
摘要翻译：在第一方面中，提供了在基板上形成外延膜的方法。该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。提供了许多其他方面。

8. 发明申请

US20060115933A1 Use of CL2 and/or HCL during silicon epitaxial film formation 有权
标题翻译：在硅外延膜形成期间使用CL2和/或HCL
公开(公告)号：US20060115933A1
公开(公告)日：2006-06-01
申请号：US11227974
申请日：2005-09-14
申请人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
发明人： Zhiyuan Ye , Yihwan Kim , Xiaowei Li , Ali Zojaji , Nicholas Dalida , Jinsong Tang , Xiao Chen , Arkadii Samoilov
IPC分类号： H01L21/332 , H01L21/336
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.
摘要翻译：在第一方面，提供了在基板上形成外延膜的第一种方法。第一种方法包括（a）提供基底; （b）将所述衬底暴露于至少硅源，以在所述衬底的至少一部分上形成外延膜; 和（c）将衬底暴露于HCl和Cl2，以蚀刻外延膜和在步骤（b）中形成的任何其它膜。提供了许多其他方面。

9. 发明申请

US20120278570A1 METHODS FOR SYNCHRONIZING STORAGE SYSTEM DATA 有权
标题翻译：用于同步存储系统数据的方法
公开(公告)号：US20120278570A1
公开(公告)日：2012-11-01
申请号：US13429958
申请日：2012-03-26
申请人： Wai Lam , Ronald S. Niles , Xiaowei Li
发明人： Wai Lam , Ronald S. Niles , Xiaowei Li
IPC分类号： G06F12/16
CPC分类号： G06F3/0619 , G06F3/065 , G06F3/0683 , G06F11/1451 , G06F11/1464 , G06F11/2082 , G06F21/78 , G06F21/80 , G06F2221/2103
摘要： In accordance with one example, a method for comparing data units is disclosed comprising generating a first digest representing a first data unit stored in a first memory. A first encoded value is generated based, at least in part, on the first digest and a predetermined value. A second digest representing a second data unit stored in a second memory different from the first memory, is generated. A second encoded value is derived based, at least in part, on the second digest and the predetermined value. It is determined whether the first data unit and the second data unit are the same based, at least in part, on the first digest, the first predetermined value, the first encoded value, and the second digest, by first processor. If the second data unit is not the same as the first data unit, the first data unit is stored in the second memory.
摘要翻译：根据一个示例，公开了一种用于比较数据单元的方法，包括生成表示存储在第一存储器中的第一数据单元的第一摘要。至少部分地基于第一摘要和预定值生成第一编码值。生成表示存储在与第一存储器不同的第二存储器中的第二数据单元的第二摘要。至少部分地基于第二摘要和预定值导出第二编码值。通过第一处理器，至少部分地基于第一摘要，第一预定值，第一编码值和第二摘要来确定第一数据单元和第二数据单元是否相同。如果第二数据单元与第一数据单元不相同，则第一数据单元被存储在第二存储器中。

10. 发明授权

US07754650B2 Trifunctional catalyst for sulphur transfer, denitrogenation and combustion promoting and a method for preparing the same 有权
标题翻译：用于硫转移，脱氮和燃烧促进的三官能催化剂及其制备方法
公开(公告)号：US07754650B2
公开(公告)日：2010-07-13
申请号：US10985147
申请日：2004-11-10
申请人： Zhenyi Liu , Xiaowei Li , Hua Chen , Youcheng Liu
发明人： Zhenyi Liu , Xiaowei Li , Hua Chen , Youcheng Liu
IPC分类号： B01J23/10 , B01J23/58 , B01J23/22
CPC分类号： B01J20/3234 , B01D53/8637 , B01D53/865 , B01D2255/206 , B01D2255/20723 , B01D2255/20738 , B01J20/06 , B01J20/3236 , B01J23/005 , B01J23/22 , B01J23/78 , B01J23/8472 , B01J35/002 , B01J37/0045 , C10G11/02 , C10G11/04 , Y10S502/524
摘要： The present invention relates to a trifunctional catalyst used in catalytic cracking device in petroleum refining industry and a method for preparing the same. The trifunctional catalyst of the invention comprises absorbent, cerium dioxide and vanadium pentoxide acting as oxidative catalyst and cerium oxyfluoride acting as structural promoter. The oxidative catalyst and structural promoter are dispersed over the absorbent. The absorbent is spinel-based composite oxides having a general formula of MgAl2-xFexO4.yMgO, where the x is 0.01-0.5 and y is 0.2-1.2. In the trifunctional catalyst, the raw material for forming the chemical compound containing rare-earth cerium is hamartite powder. The method for preparing the trifunctional catalyst of the invention is shown as follows: the components relating to the preparation of the finished product are dissolved or dispersed into liquid materials; then the trifunctional catalyst is obtained after the mixing, drying and calcining of such liquid materials. The trifunctional catalyst of the invention is used for highly efficient absorption and desorption of sulfoxides contained in the catalytic cracking flue gas regenerated in the process of petroleum refining, the combustion promoting of carbon monoxide and the reduction of nitrogen oxides. Furthermore, the method for preparing such trifunctional catalyst is featured for its lower cost.
摘要翻译：本发明涉及用于石油炼制工业的催化裂化装置的三官能催化剂及其制备方法。本发明的三官能催化剂包括作为氧化催化剂的吸收剂，二氧化铈和五氧化二钒和作为结构促进剂的氟氧化铈。氧化催化剂和结构促进剂分散在吸收剂上。吸收剂是具有通式MgAl2-xFexO4yMgO的尖晶石复合氧化物，其中x为0.01-0.5，y为0.2-1.2。在三官能催化剂中，用于形成含有稀土铈的化合物的原料是不分散的粉末。制备本发明的三官能催化剂的方法如下：与成品的制备相关的组分溶解或分散在液体材料中; 然后在这种液体材料的混合，干燥和煅烧之后获得三官能催化剂。本发明的三官能催化剂用于石油精炼过程中再生的催化裂化烟道气中所含的亚砜的高效吸收和解吸，一氧化碳的燃烧促进和氮氧化物的还原。此外，制备这种三官能催化剂的方法的特征在于其较低的成本。

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