专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08906446B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
标题翻译：在半导体衬底上无电沉积材料的装置和方法
公开(公告)号：US08906446B2
公开(公告)日：2014-12-09
申请号：US13408039
申请日：2012-02-29
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
摘要翻译：提供一种装置，其具有能够被密封并且能够承受增加的压力和高温的可关闭室。该室具有用于供应各种处理液体的多个入口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。该装置还包括解决方案加热器和用于控制室内的温度和压力的控制系统。通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

2. 发明授权

US08586133B2 Method for strengthening adhesion between dielectric layers formed adjacent to metal layers 有权
标题翻译：用于加强与金属层相邻形成的介电层之间的附着力的方法
公开(公告)号：US08586133B2
公开(公告)日：2013-11-19
申请号：US13540036
申请日：2012-07-02
申请人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
IPC分类号： C23C20/02 , C23C20/04 , H01L21/28 , H01L21/288
CPC分类号： H01L21/64 , C23C8/02 , C23C18/1605 , C23C18/1632 , C23C18/1683 , C23C18/1803 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , H01L21/288 , H01L21/321 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76874 , Y10T428/1241 , Y10T428/12493 , Y10T428/12549 , Y10T428/23 , Y10T428/24628
摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
摘要翻译：提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。在一些情况下，可以基于分析来调整流体的组成。

3. 发明授权

US08128987B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
标题翻译：在半导体衬底上无电沉积材料的装置和方法
公开(公告)号：US08128987B2
公开(公告)日：2012-03-06
申请号：US11138531
申请日：2005-05-26
申请人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： A method for electroless deposition from a deposition solution in a working chamber, where the process can include heating the deposition solution to its boiling point and subsequently reducing the temperature of the deposition solution to a working temperature range that is between approximately 1% and approximately 25% below the boiling point of said solution under a predetermined pressure; and the process also can include heating the deposition solution while filling an enclosed area of the chamber such that the deposition solution reaches its boiling point immediately after the enclosed area is filled.
摘要翻译：一种用于从工作室中的沉积溶液进行无电沉积的方法，其中该方法可以包括将沉积溶液加热至其沸点，随后将沉积溶液的温度降低至大约1％至大约25之间的工作温度范围低于所述溶液在预定压力下的沸点％; 并且该方法还可以包括在填充室的封闭区域期间加热沉积溶液，使得沉积溶液在填充封闭区域之后立即达到其沸点。

4. 发明申请

US20110271905A1 Methods and System for Processing a Microelectronic Topography 审中-公开
标题翻译：微电子地形处理方法与系统
公开(公告)号：US20110271905A1
公开(公告)日：2011-11-10
申请号：US13185638
申请日：2011-07-19
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： B05C11/00
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

5. 发明申请

US20110014489A1 Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers 审中-公开
标题翻译：加强与金属层相邻的介电层之间的粘附强化方法
公开(公告)号：US20110014489A1
公开(公告)日：2011-01-20
申请号：US12889688
申请日：2010-09-24
申请人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
发明人： Igor C. Ivanov , Weiguo Zhang , Artur Kolics
IPC分类号： B32B15/00 , B32B3/02 , B05D5/12 , B05D3/06 , B05C11/00
CPC分类号： H01L21/64 , C23C8/02 , C23C18/1605 , C23C18/1632 , C23C18/1683 , C23C18/1803 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , H01L21/288 , H01L21/321 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76874 , Y10T428/1241 , Y10T428/12493 , Y10T428/12549 , Y10T428/23 , Y10T428/24628
摘要： A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
摘要翻译：提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。在一些情况下，可以基于分析来调整流体的组成。

6. 发明授权

US07393414B2 Methods and systems for processing a microelectronic topography 有权
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US07393414B2
公开(公告)日：2008-07-01
申请号：US11102143
申请日：2005-04-08
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： B05B1/28 , B05B15/12 , B05C11/02 , C25C14/00
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

7. 发明申请

US20070159643A1 Automated analysis tasks of complex computer system 有权
标题翻译：复杂计算机系统的自动分析任务
公开(公告)号：US20070159643A1
公开(公告)日：2007-07-12
申请号：US11327042
申请日：2006-01-06
申请人： John Bennetto , Jon Avner , Kevin Chase , Nicole Allen , Paul Bowden , Weiguo Zhang
发明人： John Bennetto , Jon Avner , Kevin Chase , Nicole Allen , Paul Bowden , Weiguo Zhang
IPC分类号： G06F15/00
CPC分类号： G06F11/3476
摘要： Automated multiple step tasks are executed on a computing device to analyze a computer system. A step engine performs a complex task such as troubleshooting, performance analysis, or disaster recovery as defined by an input file. The step engine parses the input file into individual steps and dispatches actions of the steps to another device for execution. The device returns a file with the results of the action. The step engine progresses through the list of steps and generates a log file representative of the actions taken and data collected during performance of the task.
摘要翻译：在计算设备上执行自动多步骤任务以分析计算机系统。步骤引擎执行复杂任务，例如由输入文件定义的故障排除，性能分析或灾难恢复。步骤引擎将输入文件解析成单独的步骤，并将步骤的操作分派到另一个设备执行。设备将返回一个带有该操作结果的文件。步骤引擎通过步骤列表进行演示，并生成代表在执行任务期间采集的操作和数据的日志文件。

8. 发明授权

US06939403B2 Spatially-arranged chemical processing station 有权
标题翻译：空间化学处理站
公开(公告)号：US06939403B2
公开(公告)日：2005-09-06
申请号：US10299069
申请日：2002-11-19
申请人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
发明人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
IPC分类号： H01L21/00 , H01L21/677 , B05C11/02
CPC分类号： H01L21/67173 , H01L21/67017 , H01L21/67178 , H01L21/67769
摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have random access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.
摘要翻译：本发明公开了一种站，例如用于具有柔性配置的IC制造。它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，用于在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。车站占用服务室的空间和洁净室的空间。连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

9. 发明申请

US20050160974A1 Microelectronic fabrication system components and method for processing a wafer using such components 有权
标题翻译：微电子制造系统部件和使用这些部件处理晶片的方法
公开(公告)号：US20050160974A1
公开(公告)日：2005-07-28
申请号：US11034363
申请日：2005-01-10
申请人： Igor Ivanov , Weiguo Zhang
发明人： Igor Ivanov , Weiguo Zhang
IPC分类号： C23C18/16 , H01L21/00 , H01L21/288 , H01L21/768 , C23C14/00
CPC分类号： H01L21/76843 , C23C18/1619 , H01L21/288 , H01L21/6715 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76874
摘要： A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.
摘要翻译：提供了一种处理室，其包括门，所述门被配置为使障碍物与门的开口和处理室的开口对齐，使得两个开口被密封或提供到腔室的空气通道。提供了一种方法，包括用门闩将密封一个开口的腔室，并将地形暴露于第一组工艺步骤，打开门闩，使得空气通道被提供到处理室，并将该地形暴露于第二组处理步骤，而不允许室内的液体流过空气通道。包括具有杠杆的夹爪和联接到杠杆的支撑构件的衬底保持器也在本文中考虑。本文还提供了一种具有布置在衬底保持器上方的储存器的处理室。

10. 发明申请

US20050040824A1 Measurement and correction of gradient-induced cross-term magnetic fields in an EPI sequence 失效
标题翻译： EPI序列中梯度诱导的交叉磁场的测量和校正
公开(公告)号：US20050040824A1
公开(公告)日：2005-02-24
申请号：US10960669
申请日：2004-10-08
申请人： Weiguo Zhang
发明人： Weiguo Zhang
IPC分类号： G01R33/54 , A61B5/055 , G01R33/48 , G01R33/561 , G01R33/565 , G01V3/00
CPC分类号： G01R33/56554 , G01R33/56518 , G01R33/56563
摘要： A method is disclosed for determining a gradient-induced cross-term magnetic field in a magnetic resonance imaging (MRI) system comprising: positioning an object in a static magnetic field; applying a radio frequency (RF) saturation pulse that spatially saturates nuclei of a slice of the object and applying an echo planar imaging (EPI) sequence to form an image of a slice of the object; generating a cross-field correction factor by analyzing the spatial distribution of the saturation line in the image.
摘要翻译：公开了一种用于确定磁共振成像（MRI）系统中的梯度诱导的交叉磁场的方法，包括：将物体定位在静态磁场中; 施加射频（RF）饱和脉冲，空间上饱和物体切片的核并施加回波平面成像（EPI）序列以形成物体的切片的图像; 通过分析图像中的饱和线的空间分布来产生交叉场校正因子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式