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1. 发明授权

US06939403B2 Spatially-arranged chemical processing station 有权
标题翻译：空间化学处理站
公开(公告)号：US06939403B2
公开(公告)日：2005-09-06
申请号：US10299069
申请日：2002-11-19
申请人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
发明人： Igor Ivanov , Chiu Ting , Jonathan Weiguo Zhang , Arthur Kolics
IPC分类号： H01L21/00 , H01L21/677 , B05C11/02
CPC分类号： H01L21/67173 , H01L21/67017 , H01L21/67178 , H01L21/67769
摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have random access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.
摘要翻译：本发明公开了一种站，例如用于具有柔性配置的IC制造。它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，用于在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。车站占用服务室的空间和洁净室的空间。连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

2. 发明申请

US20050160974A1 Microelectronic fabrication system components and method for processing a wafer using such components 有权
标题翻译：微电子制造系统部件和使用这些部件处理晶片的方法
公开(公告)号：US20050160974A1
公开(公告)日：2005-07-28
申请号：US11034363
申请日：2005-01-10
申请人： Igor Ivanov , Weiguo Zhang
发明人： Igor Ivanov , Weiguo Zhang
IPC分类号： C23C18/16 , H01L21/00 , H01L21/288 , H01L21/768 , C23C14/00
CPC分类号： H01L21/76843 , C23C18/1619 , H01L21/288 , H01L21/6715 , H01L21/76802 , H01L21/76831 , H01L21/76834 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76874
摘要： A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.
摘要翻译：提供了一种处理室，其包括门，所述门被配置为使障碍物与门的开口和处理室的开口对齐，使得两个开口被密封或提供到腔室的空气通道。提供了一种方法，包括用门闩将密封一个开口的腔室，并将地形暴露于第一组工艺步骤，打开门闩，使得空气通道被提供到处理室，并将该地形暴露于第二组处理步骤，而不允许室内的液体流过空气通道。包括具有杠杆的夹爪和联接到杠杆的支撑构件的衬底保持器也在本文中考虑。本文还提供了一种具有布置在衬底保持器上方的储存器的处理室。

3. 发明授权

US06913651B2 Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
公开(公告)号：US06913651B2
公开(公告)日：2005-07-05
申请号：US10103015
申请日：2002-03-22
申请人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
发明人： Igor Ivanov , Jonathan Weiguo Zhang , Artur Kolics
IPC分类号： C23C18/16 , H01L21/288 , B05C5/00 , B05C11/00
CPC分类号： C23C18/1676 , C23C18/1628 , C23C18/163 , C23C18/1632 , C23C18/168 , C23C18/1682 , H01L21/288
摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

4. 发明申请

US20050181134A1 Methods and systems for processing a microelectronic topography 有权
公开(公告)号：US20050181134A1
公开(公告)日：2005-08-18
申请号：US11102143
申请日：2005-04-08
申请人： Igor Ivanov , Weiguo Zhang
发明人： Igor Ivanov , Weiguo Zhang
IPC分类号： H01L21/00 , H01L21/687 , B05D3/04
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

5. 发明申请

US20050181135A1 Methods and systems for processing a microelectronic topography 有权
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US20050181135A1
公开(公告)日：2005-08-18
申请号：US11108589
申请日：2005-04-18
申请人： Igor Ivanov , Weiguo Zhang
发明人： Igor Ivanov , Weiguo Zhang
IPC分类号： H01L21/00 , H01L21/687 , B05D3/04
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

6. 发明申请

US20050016201A1 Multi-staged heating system for fabricating microelectronic devices 审中-公开
标题翻译：用于制造微电子器件的多级加热系统
公开(公告)号：US20050016201A1
公开(公告)日：2005-01-27
申请号：US10624397
申请日：2003-07-22
申请人： Igor Ivanov , Weiguo Zhang
发明人： Igor Ivanov , Weiguo Zhang
IPC分类号： C23C18/16 , H01L21/00 , F25D13/04 , F25D17/02
CPC分类号： H01L21/67248 , C23C18/1619 , C23C18/1676 , H01L21/67023 , H01L21/6715
摘要： A system is provided which is adapted to transport a fluid from a plurality of serially coupled tanks to a chamber configured to process microelectronic wafers. The system further includes a plurality of temperature controllers positioned such that the chamber and the tanks are characterized into at least three zones based upon the adaptations of the controllers to maintain the fluid within each zone within a distinct temperature range. A method is also provided which includes storing a fluid within a preliminary temperature range, transporting the fluid to an intermediate tank and controlling the fluid temperature within the intermediate tank to be within a transitional temperature range distinct from the preliminary temperature range. The method further includes delivering the fluid to a process chamber and controlling the fluid temperature within the process chamber to be within a process temperature range distinct from the preliminary and transitional temperature ranges.
摘要翻译：提供了一种系统，其适于将流体从多个串联耦合的罐输送到被配置为处理微电子晶片的室。该系统还包括多个温度控制器，其定位成使得基于控制器的适应性使得室和罐的特征在于至少三个区域，以将每个区域内的流体保持在不同的温度范围内。还提供了一种方法，其包括将流体存储在初步温度范围内，将流体输送到中间罐并将中间罐内的流体温度控制在与初步温度范围不同的过渡温度范围内。该方法还包括将流体输送到处理室并将处理室内的流体温度控制在与预备温度和过渡温度范围不同的过程温度范围内。

7. 发明授权

US07972652B2 Electroless plating system 有权
标题翻译：无电镀系统
公开(公告)号：US07972652B2
公开(公告)日：2011-07-05
申请号：US11549644
申请日：2006-10-14
申请人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
发明人： Igor Ivanov , Robert D. Tas , Shashank Ravindra Kulkarni , Ron Rulkens
IPC分类号： B05D5/12 , B28B19/00 , B29B15/10 , C23C18/00 , C23C20/00 , C23C24/00 , C23C26/00 , C23C28/00 , H01C17/06 , H05K3/00
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译：无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。

8. 发明申请

US20090175856A1 Anti-Proliferative Combination Therapy Using Certain Platinum-Based Chemotherapeutic Agents and EGFR Inhibitors or Pyrimidine Analogues 失效
标题翻译：使用某些基于铂的化学治疗剂和EGFR抑制剂或嘧啶类似物的抗增殖联合治疗
公开(公告)号：US20090175856A1
公开(公告)日：2009-07-09
申请号：US12084740
申请日：2006-11-13
申请人： Katja Wosikowski-Buters , Christoph Schaab , Marino Schuhmacher , Franz Obermayr , Igor Ivanov
发明人： Katja Wosikowski-Buters , Christoph Schaab , Marino Schuhmacher , Franz Obermayr , Igor Ivanov
IPC分类号： A61K39/395 , A61K31/517 , A61K31/7064 , A61K31/505 , A61P35/00
CPC分类号： A61K31/555 , A61K31/505 , A61K33/24 , A61K45/06 , A61K2300/00
摘要： The present invention describes a method or uses of prevention and/or treatment of a cancer or a tumor, and in particular to a combination therapy, methods, compositions and pharmaceutical packages comprising an inhibitor of receptors of the EGFR family or a chemotherapeutically active pyrimidine analogue and certain platinum-based chemotherapeutic agents.
摘要翻译：本发明描述了预防和/或治疗癌症或肿瘤的方法或用途，特别是涉及包含EGFR家族受体抑制剂或化学治疗活性嘧啶类似物的组合疗法，方法，组合物和药物包装和某些铂类化疗剂。

9. 发明申请

US20070284746A1 NANO-ELECTRODE-ARRAY FOR INTEGRATED CIRCUIT INTERCONNECTS 审中-公开
标题翻译：用于集成电路互连的纳米电极阵列
公开(公告)号：US20070284746A1
公开(公告)日：2007-12-13
申请号：US11742328
申请日：2007-04-30
申请人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
发明人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
IPC分类号： H01L21/82
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译：提供一种集成电路，其包括具有在电介质层中设置的沟槽和通孔的集成电路。纳米电极阵列位于沟槽和通孔中的电介质层的上方，导体在纳米电极阵列的上方。导体和纳米电极阵列与电介质层的表面共面。

10. 发明申请

US20060193492A1 Proprietary watermark system for secure digital media and content distribution 失效
标题翻译：专有水印系统，用于安全数字媒体和内容分发
公开(公告)号：US20060193492A1
公开(公告)日：2006-08-31
申请号：US11415120
申请日：2006-05-02
申请人： Vsevolod Kuzmich , Igor Ivanov
发明人： Vsevolod Kuzmich , Igor Ivanov
IPC分类号： G06K9/00
CPC分类号： G06T1/0021 , G06T2201/0051 , G06T2201/0052
摘要： A method of generating a protected digital media content, is provided. According to an embodiment of the present invention, the method includes generating a protected digital media content, comprising: generating a first control signal for use in an authorization signature of digital media content, generating a second control signal for use in a certification of the content owner's right, and generating information about the digital media content; and adding the first control signal, the second control signal, and the information to the digital media content to provide a protected content.
摘要翻译：提供了一种产生受保护的数字媒体内容的方法。根据本发明的实施例，该方法包括生成受保护的数字媒体内容，包括：产生用于数字媒体内容的授权签名的第一控制信号，产生用于内容认证的第二控制信号所有者权利，并生成有关数字媒体内容的信息; 以及将第一控制信号，第二控制信号和信息添加到数字媒体内容以提供受保护的内容。

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