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1. 发明授权

US08323471B2 Automatic deposition profile targeting 有权
标题翻译：自动沉积轮廓目标
公开(公告)号：US08323471B2
公开(公告)日：2012-12-04
申请号：US12034744
申请日：2008-02-21
申请人： Thomas Ortleb , Markus Nopper , Dirk Wollstein
发明人： Thomas Ortleb , Markus Nopper , Dirk Wollstein
IPC分类号： C25D21/12 , C25D5/00 , C25D5/02 , C25C14/00
CPC分类号： C25D21/12 , C25D5/22 , H01L21/2885 , H01L21/7684 , H01L21/76877 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.
摘要翻译：一种用于用位置相关的可控电镀工具电化学沉积铜的自动沉积轮廓瞄准的方法，包括以下步骤：在图案化的产品晶片上沉积铜，测量沉积的铜的实际厚度分布并产生相应的测量数据，馈送测量数据到先进的过程控制（APC）模型，并计算位置相关可控电镀工具中电镀参数的各个校正。

2. 发明授权

US07393414B2 Methods and systems for processing a microelectronic topography 有权
标题翻译：用于处理微电子拓扑的方法和系统
公开(公告)号：US07393414B2
公开(公告)日：2008-07-01
申请号：US11102143
申请日：2005-04-08
申请人： Igor C. Ivanov , Weiguo Zhang
发明人： Igor C. Ivanov , Weiguo Zhang
IPC分类号： B05B1/28 , B05B15/12 , B05C11/02 , C25C14/00
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/6708 , Y02P80/30
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。在一些实施例中，流体可以填充封闭区域。另外或替代地，围绕地形可以形成第二封闭区域。因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

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