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    • 3. 发明申请
    • LED lamp
    • 点灯
    • US20140175983A1
    • 2014-06-26
    • US14195865
    • 2014-03-04
    • Wei-Che Hsieh
    • Wei-Che Hsieh
    • H05B33/08
    • H05B33/0809H05B33/0827Y02B20/341
    • A lamp is provided with a full-wave rectifier for convert AC to DC; a SPD electrically connected to the full-wave rectifier for protecting the lamp from voltage spikes; series connected LEDs electrically connected to the SPD; a microprocessor electrically connected to the SPD; series connected MOSFET start circuits electrically to the microprocessor, the MOSFET start circuits configured to switch electronic signals; and resistors each electrically interconnected the LED and the MOSFET start circuit. In response to a normal DC supplied from the SPD, the microprocessor creates a PWM signal to activate the MOSFET start circuits which in turn initiate operations of the LEDs via the resistors respectively. In response to an abnormal DC having voltage spikes supplied from the SPD, the microprocessor deactivates the MOSFET start circuits which in turn direct the DC through the resistors rather than supply the DC to the LEDs via the resistors respectively.
    • 一个灯具有一个用于转换AC到DC的全波整流器; SPD电连接到全波整流器,用于保护灯不受电压尖峰影响; 串联连接的LED电连接到SPD; 电连接到SPD的微处理器; 串联MOSFET启动电路与微处理器电连接,MOSFET启动电路配置为切换电子信号; 以及电阻器,每个电连接LED和MOSFET启动电路。 响应于从SPD提供的正常DC,微处理器创建PWM信号以激活MOSFET启动电路,而这又启动了经由电阻器的LED的操作。 响应于具有从SPD提供的电压尖峰的异常DC,微处理器去激活MOSFET起始电路,其继而通过电阻器引导DC,而不是分别经由电阻器将DC提供给LED。
    • 6. 发明授权
    • Method for manufacturing through-silicon via
    • 硅通孔制造方法
    • US08367553B2
    • 2013-02-05
    • US12962055
    • 2010-12-07
    • Wei-Che TsaoWen-Chin Lin
    • Wei-Che TsaoWen-Chin Lin
    • H01L21/306
    • H01L21/76898H01L21/7684
    • A method for manufacturing TSVs comprises following steps: A stack structure having a substrate, an ILD layer and a dielectric stop layer is provided, in which an opening penetrating through the ILD layer and the dialectic stop layer and further extending into the substrate is formed. After an insulator layer and a metal barrier are formed on the stack structure, a top metal layer is formed on the stack structure to fulfill the opening. A first planarization process stopping on the metal barrier is conducted, wherein the first planarization process has a polishing rate for removing the metal barrier less than that for removing the top metal layer. A second planarization process stopping on the dielectric stop layer is conducted, wherein the second planarization process has a polishing rate for removing the insulator layer greater than that for removing the dielectric stop layer. The dielectric stop layer is than removed.
    • 制造TSV的方法包括以下步骤:提供具有基板,ILD层和电介质停止层的堆叠结构,其中形成穿透ILD层和辩证阻止层并进一步延伸到基板中的开口。 在堆叠结构上形成绝缘体层和金属屏障之后,在堆叠结构上形成顶部金属层以实现开口。 进行停止在金属屏障上的第一平面化处理,其中第一平面化工艺具有除去金属屏障的抛光速率小于除去顶部金属层的抛光速率。 进行停止在电介质停止层上的第二平坦化工艺,其中第二平坦化工艺具有用于除去绝缘体层的抛光速率大于去除电介质停止层的抛光速率。 电介质停止层除去。
    • 8. 发明申请
    • INTEGRATED CIRCUIT TRANSFORMER
    • 集成电路变压器
    • US20130009741A1
    • 2013-01-10
    • US13474677
    • 2012-05-17
    • Cheng-Chou HUNGCheng-Jyi CHANGTung-Hsing LEEWei-Che HUANG
    • Cheng-Chou HUNGCheng-Jyi CHANGTung-Hsing LEEWei-Che HUANG
    • H01F27/28
    • H01F19/04H01F27/2804H01L23/5227H01L2924/0002H01L2924/00
    • The invention provides an integrated circuit transformer disposed on a substrate. The integrated circuit transformer includes a first coiled metal pattern disposed on the substrate, comprising an inner loop segment and an outer loop segment. A second coiled metal pattern is disposed on the substrate, laterally between the inner loop segment and the outer loop segment. A dielectric layer is disposed on the first coiled metal pattern and the second coiled metal pattern. A first via is formed through the dielectric layer, electrically connecting to one of the first and second coiled metal patterns. A first redistribution pattern is disposed on the dielectric layer, electrically connecting to and extending along the first via, wherein the first redistribution pattern covers at least a portion of the first coiled metal pattern and at least a portion of the second coiled metal pattern.
    • 本发明提供一种设置在基板上的集成电路变压器。 集成电路变压器包括设置在基板上的第一卷绕金属图案,包括内环段和外环段。 第二卷绕金属图案设置在衬底上,横向在内环段和外环段之间。 电介质层设置在第一卷绕金属图案和第二卷绕金属图案上。 通过介电层形成第一通孔,电连接到第一和第二卷绕金属图案之一。 第一再分配图案设置在电介质层上,电连接并沿着第一通孔延伸,其中第一再分配图案覆盖第一卷绕金属图案的至少一部分和第二卷绕金属图案的至少一部分。