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1. 发明授权

US08283683B2 Chip-bonding light emitting diode chip 有权
标题翻译：芯片贴片发光二极管芯片
公开(公告)号：US08283683B2
公开(公告)日：2012-10-09
申请号：US12629030
申请日：2009-12-01
申请人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
发明人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012
摘要： A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.
摘要翻译：发光二极管芯片包括永久性基板，其具有形成在永久基板上的保持空间; 绝缘层和顺序地形成在永久性基板和保持间隔物上的金属层; 具有共晶层和发光区域的管芯，并通过耦合到金属层的共晶层与保持空间内的金属层接合; 填充在所述保持空间和所述模具之间的填充结构; 以及形成在管芯上并与发光区域接触的电极。

2. 发明授权

US08592234B2 Method for manufacturing a LED 有权
标题翻译：制造LED的方法
公开(公告)号：US08592234B2
公开(公告)日：2013-11-26
申请号：US13594948
申请日：2012-08-27
申请人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
发明人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012
摘要： A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.
摘要翻译：发光二极管包括永久性基板，其具有形成在永磁基板的第一表面上的芯片保持空间; 绝缘层和金属层，其依次形成在永久性基板的第一表面和芯片保持空间上，其中金属层包括第一区域和第二区域彼此不接触; 芯片，其具有附接在所述芯片保持空间的底部上的第一表面，与所述金属层的所述第一区域接触; 填充在芯片保持空间和芯片之间的填充结构; 以及形成在所述芯片的第二表面上的第一电极。芯片包括发光区域，并且通过使用芯片接合技术来实现金属层的第一区域和发光区域之间的电连接。

3. 发明申请

US20120322180A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20120322180A1
公开(公告)日：2012-12-20
申请号：US13594948
申请日：2012-08-27
申请人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
发明人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012
摘要： A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.
摘要翻译：发光二极管包括永久性基板，其具有形成在永磁基板的第一表面上的芯片保持空间; 绝缘层和金属层，其依次形成在永久性基板的第一表面和芯片保持空间上，其中金属层包括第一区域和第二区域彼此不接触; 芯片，其具有附接在所述芯片保持空间的底部上的第一表面，与所述金属层的所述第一区域接触; 填充在芯片保持空间和芯片之间的填充结构; 以及形成在所述芯片的第二表面上的第一电极。芯片包括发光区域，并且通过使用芯片接合技术来实现金属层的第一区域和发光区域之间的电连接。

4. 发明申请

US20100072497A1 LIGHT EMITTING DIODE CHIP 有权
标题翻译：发光二极管芯片
公开(公告)号：US20100072497A1
公开(公告)日：2010-03-25
申请号：US12629030
申请日：2009-12-01
申请人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
发明人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012
摘要： A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.
摘要翻译：发光二极管芯片包括永久性基板，其具有形成在永久基板上的保持空间; 绝缘层和顺序地形成在永久性基板和保持间隔物上的金属层; 具有共晶层和发光区域的管芯，并通过耦合到金属层的共晶层与保持空间内的金属层接合; 填充在所述保持空间和所述模具之间的填充结构; 以及形成在管芯上并与发光区域接触的电极。

5. 发明申请

US20080105863A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080105863A1
公开(公告)日：2008-05-08
申请号：US11749139
申请日：2007-05-15
申请人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu
发明人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/04105 , H01L2224/24 , H01L2224/32225 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2924/15153
摘要： A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer further comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer but not contacted to the second area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.
摘要翻译：发光二极管包括永久性基板，其具有形成在永磁基板的第一表面上的芯片保持空间; 绝缘层和金属层，其顺序形成在所述永久基板的第一表面和所述芯片保持空间上，其中所述金属层还包括第一区域和不彼此接触的第二区域; 芯片，其具有附接在所述芯片保持空间的底部上的第一表面，与所述金属层的所述第一区域接触，但不与所述金属层的所述第二区域接触; 填充在芯片保持空间和芯片之间的填充结构; 以及形成在所述芯片的第二表面上的第一电极。芯片包括发光区域，并且通过使用芯片接合技术来实现金属层的第一区域和发光区域之间的电连接。

6. 发明申请

US20070290221A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20070290221A1
公开(公告)日：2007-12-20
申请号：US11748802
申请日：2007-05-15
申请人： Chang-Da Tsai , Ching-Shih Ma
发明人： Chang-Da Tsai , Ching-Shih Ma
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L33/0079 , H01L33/10
摘要： A light emitting diode includes a permanent substrate having a first portion and a second portion, and a chip attached on the first portion of the permanent substrate by a chip bonding technology. The chip includes at least one first electrode and a light emitting region. The manufacturing method comprises a step of mounting a single chip on the first portion of the permanent substrate by a chip bonding technology to overcome the fragility problem of an EPI-wafer.
摘要翻译：发光二极管包括具有第一部分和第二部分的永久性基板，以及通过芯片接合技术附接在永久基板的第一部分上的芯片。芯片包括至少一个第一电极和发光区域。制造方法包括通过芯片接合技术将单个芯片安装在永久基板的第一部分上以克服EPI晶片的脆性问题的步骤。

7. 发明授权

US06716654B2 Light-emitting diode with enhanced brightness and method for fabricating the same 有权
标题翻译：具有增强亮度的发光二极管及其制造方法
公开(公告)号：US06716654B2
公开(公告)日：2004-04-06
申请号：US10095003
申请日：2002-03-12
申请人： Jung-Kuei Hsu , Hsueh-Chih Yu , Chia-Liang Hsu , Hung-Yuan Lu , Yen-Hu Chu , Chui-Chuan Chang , Kwang-Ru Wang , Chang-Da Tsai , San Bao Lin , Yung-Chiang Hwang , Ming-Der Lin
发明人： Jung-Kuei Hsu , Hsueh-Chih Yu , Chia-Liang Hsu , Hung-Yuan Lu , Yen-Hu Chu , Chui-Chuan Chang , Kwang-Ru Wang , Chang-Da Tsai , San Bao Lin , Yung-Chiang Hwang , Ming-Der Lin
IPC分类号： H01L2100
CPC分类号： H01L33/0079 , H01L21/42 , H01L33/14 , H01L33/382 , H01L33/387 , H01L33/405
摘要： The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.
摘要翻译：本发明公开了一种具有增强的亮度的发光二极管及其制造方法。发光二极管包括：外延LED结构，其具有在发光有源层内部具有多个间隔物的至少一个发光有源层; 至少一个导电接触，形成在底表面上，其中在发光有源层内部没有形成间隔物; 形成在间隔物中的透明材料层; 在所述透明材料层和永久性基板之间形成的粘附层; 形成在永久性基板的底面上的底部电极; 以及形成在外延LED结构的顶表面上的相对电极。

8. 发明授权

US5952885A Current-to-voltage converter with highpass filter function 失效
标题翻译：具有高通滤波器功能的电流 - 电压转换器
公开(公告)号：US5952885A
公开(公告)日：1999-09-14
申请号：US964728
申请日：1997-11-05
申请人： Chien-Ping Wu , Chang-Da Tsai , Jiann-Jong Chen
发明人： Chien-Ping Wu , Chang-Da Tsai , Jiann-Jong Chen
IPC分类号： H03F3/08 , H03H11/12 , H03F1/34
CPC分类号： H03H11/1217 , H03F3/087
摘要： A current-to-voltage converter with highpass filter function constructed according to the present invention contains two operational amplifiers OP1 and OP2, two resistors R.sub.1 and R.sub.2, and a capacitor C.sub.1. The noninverting (+) terminal of the operational amplifier OP1 is grounded. The inverting (-) terminal of the operational amplifier OP1 is used to receive the output of the current-type sensing device and connected to the output terminal of the operational amplifier OP2 via the resistor R.sub.2. The output terminal of the operational amplifier OP1 is connected to the noninverting terminal of the operational amplifier OP2. The output of the operational amplifier OP2 is fed back to the inverting terminal of the operational amplifier OP2 via the capacitor C.sub.1, and the inverting terminal of the operational amplifier OP2 is connected to one terminal of the resistor R.sub.1 of which another terminal is grounded.
摘要翻译：根据本发明构造的具有高通滤波器功能的电流 - 电压转换器包含两个运算放大器OP1和OP2，两个电阻器R1和R2以及电容器C1。运算放大器OP1的同相（+）端子接地。运算放大器OP1的反相（ - ）端子用于接收电流型感测装置的输出，并通过电阻R2连接到运算放大器OP2的输出端。运算放大器OP1的输出端连接到运算放大器OP2的同相端子。运算放大器OP2的输出经由电容器C1反馈到运算放大器OP2的反相端，运算放大器OP2的反相端连接到另一端子接地的电阻器R1的一端。

9. 发明授权

US5952878A Second order differential highpass filter 失效
标题翻译：二阶差分高通滤波器
公开(公告)号：US5952878A
公开(公告)日：1999-09-14
申请号：US9786
申请日：1998-01-20
申请人： Chien-Ping Wu , Chang-Da Tsai , Shiao-Long Zhan
发明人： Chien-Ping Wu , Chang-Da Tsai , Shiao-Long Zhan
IPC分类号： H03H11/04 , H03H11/12 , H03K5/00 , H03B1/04
CPC分类号： H03H11/1217
摘要： A second-order differential highpass filter constructed according to the present invention includes a difference amplifier and a feedback processing circuit. The difference amplifier includes an operational amplifier OP.sub.1, and four resistors R.sub.3, R.sub.4, R.sub.5 and R.sub.6, wherein R.sub.4 /R.sub.3 =R.sub.6 /R.sub.5. An input voltage V.sub.1 is fed to the inverting terminal (-) of the operational amplifier OP.sub.1 via the resistor R.sub.5. Another input voltage V.sub.2 is fed to the noninverting terminal (+) of the operational amplifier OP.sub.1 via the resistor R.sub.3. The output of the operational amplifier OP.sub.1 is fed back to the inverting terminal (-) of the operational amplifier OP.sub.1 via the resistor R.sub.6. The feedback processing circuit includes an operational amplifier OP.sub.2, two resistors R.sub.1 and R.sub.2, and two serial capacitors C.sub.2 and C.sub.1. The output of the operational amplifier OP.sub.2 is fed back to the inverting terminal (-) of the operational amplifier OP.sub.2 via the two serial capacitors C.sub.1 and C.sub.2, and is connected to the noninverting terminal of the operational amplifier OP.sub.1 via the resistor R.sub.4, and the noninverting (+) terminal of the operational amplifier OP.sub.2 is grounded. The inverting terminal of the operational amplifier OP.sub.2 is connected to the output terminal of the operational amplifier OP.sub.1 via the resistor R.sub.1. The two serial capacitors C.sub.1 and C.sub.2 are connected therebetween to one terminal of the resistor R.sub.2 of which another terminal is grounded.
摘要翻译：根据本发明构造的二阶差分高通滤波器包括差分放大器和反馈处理电路。差分放大器包括运算放大器OP1和四个电阻器R3，R4，R5和R6，其中R4 / R3 = R6 / R5。输入电压V1通过电阻R5馈送到运算放大器OP1的反相端（ - ）。另一个输入电压V2通过电阻器R3馈送到运算放大器OP1的同相端（+）。运算放大器OP1的输出经由电阻R6反馈到运算放大器OP1的反相端（ - ）。反馈处理电路包括运算放大器OP2，两个电阻器R1和R2以及两个串联电容器C2和C1。运算放大器OP2的输出经由两个串联电容器C1和C2反馈到运算放大器OP2的反相端（ - ），并且经由电阻器R4连接到运算放大器OP1的同相端子，并且运算放大器OP2的同相（+）端子接地。运算放大器OP2的反相端经由电阻R1与运算放大器OP1的输出端相连。两个串联电容器C1和C2连接在另一个端子接地的电阻器R2的一个端子之间。

10. 发明授权

US5701100A Second-order highpass difference filter 失效
标题翻译：二阶高通差分滤波器
公开(公告)号：US5701100A
公开(公告)日：1997-12-23
申请号：US709867
申请日：1996-09-10
申请人： Chien-Ping Wu , Chang-Da Tsai
发明人： Chien-Ping Wu , Chang-Da Tsai
IPC分类号： H03H11/12 , H03K5/00 , H03B1/04
CPC分类号： H03H11/126
摘要： A second-order highpass difference filter constructed according to the present invention includes a difference amplifier and a feedback processing circuit. The difference amplifier includes an operational amplifier OP.sub.1, and four resistors R.sub.1, R.sub.2, R.sub.3 and R.sub.4. The feedback processing circuit is composed of two operational amplifiers OP.sub.2 and OP.sub.3, resistors R.sub.5 and R.sub.6, and two serial capacitors C.sub.1 and C.sub.2. The inverting and noninverting terminals of the operational amplifier OP.sub.3 are connected to the output of the difference amplifier and of the operational amplifier OP.sub.2, respectively. The output of the operational amplifier OP.sub.2 is also fed back to the inverting terminal of the operational amplifier OP.sub.2 via the resistor R.sub.5, and the noninverting terminal of the operational amplifier OP.sub.2 is grounded. The output terminal of the operational amplifier OP.sub.3 is connected to the inverting terminal of the operational amplifier OP.sub.2 via the two serial capacitors C.sub.1 and C.sub.2 and to the noninverting terminal of the operational amplifier OP.sub.1 via the resistor R.sub.4. The two serial capacitors C.sub.1 and C.sub.2 are connected therebetween to one terminal of the resistor R.sub.6 of which another terminal is grounded.
摘要翻译：根据本发明构造的二阶高通差分滤波器包括差分放大器和反馈处理电路。差分放大器包括运算放大器OP1和四个电阻器R1，R2，R3和R4。反馈处理电路由两个运算放大器OP2和OP3，电阻器R5和R6以及两个串联电容器C1和C2组成。运算放大器OP3的反相和非反相端分别连接到差分放大器和运算放大器OP2的输出端。运算放大器OP2的输出也通过电阻R5反馈到运算放大器OP2的反相端，运算放大器OP2的同相端接地。运算放大器OP3的输出端子通过两个串联电容器C1和C2连接到运算放大器OP2的反相端，经由电阻器R4连接到运算放大器OP1的同相端子。两个串联电容器C1和C2连接在两个串联电容器C1和C2之间的另一个端子接地的电阻器R6的一个端子。

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