专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09059250B2 Lateral-dimension-reducing metallic hard mask etch 有权
标题翻译：侧向尺寸减小金属硬掩模蚀刻
公开(公告)号：US09059250B2
公开(公告)日：2015-06-16
申请号：US13398875
申请日：2012-02-17
申请人： Samuel S. Choi , Wai-kin Li
发明人： Samuel S. Choi , Wai-kin Li
IPC分类号： H01L21/28 , H01L21/768 , H01L21/033 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/76816 , H01L21/0338 , H01L21/31144 , H01L21/32136 , H01L21/32139
摘要： A combination of gases including at least a fluorocarbon gas, oxygen, and an inert sputter gas is employed to etch at least one opening into an organic photoresist. The amount of oxygen is controlled to a level that limits conversion of a metallic nitride material in an underlying hard mask layer to a metal oxide, and causes organic polymers generated from the organic photoresist to cover peripheral regions of each opening formed in the organic photoresist. The hard mask layer is etched with a taper by the oxygen-limited fluorine-based etch chemistry provided by the combination of gases. The taper angle can be controlled such that a shrink ratio of the lateral dimension by the etch can exceed 2.0.
摘要翻译：使用包括至少一种碳氟化合物气体，氧气和惰性溅射气体的气体的组合来将至少一个开口蚀刻到有机光致抗蚀剂中。将氧的量控制在将下面的硬掩模层中的金属氮化物材料转化为金属氧化物的水平，并且使由有机光致抗蚀剂产生的有机聚合物覆盖在有机光致抗蚀剂中形成的每个开口的周边区域。通过由气体组合提供的受氧限定的氟基蚀刻化学技术，通过锥形蚀刻硬掩模层。可以控制锥角使得通过蚀刻的横向尺寸的收缩率可以超过2.0。

2. 发明授权

US09046788B2 Method for monitoring focus on an integrated wafer 有权
标题翻译：用于监控集成晶圆的方法
公开(公告)号：US09046788B2
公开(公告)日：2015-06-02
申请号：US12122929
申请日：2008-05-19
申请人： Allen H. Gabor , Wai-Kin Li
发明人： Allen H. Gabor , Wai-Kin Li
IPC分类号： G03B27/52 , G03B27/68 , G03F7/20
CPC分类号： G03F7/70333 , G03F7/70508 , G03F7/70641
摘要： A method and apparatus are provided for improving the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention is particularly useful for step-and-scan system and the CD of two features in each exposure field are measured in fields exposed at varying focus to form at least two Bossung curves. Exposure focus instructions are calculated based on the intersection point of the curves and the wafer is then scanned and imaged based on the calculated exposure focus instructions. In another aspect of the invention, when multiple wafers are being processed operational variances may cause a drift in the focus. The focus drift can be easily corrected by measuring the critical dimension of each of the features and comparing the difference to determine if any focus offset is needed to return the focus to the original calculated focus value.
摘要翻译：提供了一种用于在半导体制造工艺的光刻成像过程期间改善诸如晶片之类的衬底的聚焦的方法和装置。本发明对于步进扫描系统特别有用，并且每个曝光场中的两个特征的CD在以不同焦点曝光的场中测量以形成至少两个Bossung曲线。基于曲线的交点，然后基于计算出的曝光聚焦指令对晶片进行扫描和成像，计算曝光对焦指令。在本发明的另一方面，当正在处理多个晶片时，操作方差可能导致焦点漂移。可以通过测量每个特征的临界尺寸并比较差异来确定是否需要任何聚焦偏移以将焦点返回到原始计算的聚焦值，从而容易地校正聚焦漂移。

3. 发明申请

US20130214391A1 Lateral-Dimension-Reducing Metallic Hard Mask Etch 有权
标题翻译：侧向尺寸减少金属硬掩模蚀刻
公开(公告)号：US20130214391A1
公开(公告)日：2013-08-22
申请号：US13398875
申请日：2012-02-17
申请人： Samuel S. Choi , Wai-kin Li
发明人： Samuel S. Choi , Wai-kin Li
IPC分类号： H01L29/02 , H01L21/28
CPC分类号： H01L21/76816 , H01L21/0338 , H01L21/31144 , H01L21/32136 , H01L21/32139
摘要： A combination of gases including at least a fluorocarbon gas, oxygen, and an inert sputter gas is employed to etch at least one opening into an organic photoresist. The amount of oxygen is controlled to a level that limits conversion of a metallic nitride material in an underlying hard mask layer to a metal oxide, and causes organic polymers generated from the organic photoresist to cover peripheral regions of each opening formed in the organic photoresist. The hard mask layer is etched with a taper by the oxygen-limited fluorine-based etch chemistry provided by the combination of gases. The taper angle can be controlled such that a shrink ratio of the lateral dimension by the etch can exceed 2.0.
摘要翻译：使用包括至少一种碳氟化合物气体，氧气和惰性溅射气体的气体的组合来将至少一个开口蚀刻到有机光致抗蚀剂中。将氧的量控制在将下面的硬掩模层中的金属氮化物材料转化为金属氧化物的水平，并且使由有机光致抗蚀剂产生的有机聚合物覆盖在有机光致抗蚀剂中形成的每个开口的周边区域。通过由气体组合提供的受氧限定的氟基蚀刻化学技术，通过锥形蚀刻硬掩模层。可以控制锥角使得通过蚀刻的横向尺寸的收缩率可以超过2.0。

4. 发明授权

US08513769B2 Electrical fuses and resistors having sublithographic dimensions 有权
标题翻译：具有亚光刻尺寸的电气保险丝和电阻器
公开(公告)号：US08513769B2
公开(公告)日：2013-08-20
申请号：US12765275
申请日：2010-04-22
申请人： Charles T. Black , Matthew E. Colburn , Timothy J. Dalton , Daniel C. Edelstein , Wai-Kin Li , Anthony K. Stamper , Haining S. Yang
发明人： Charles T. Black , Matthew E. Colburn , Timothy J. Dalton , Daniel C. Edelstein , Wai-Kin Li , Anthony K. Stamper , Haining S. Yang
IPC分类号： H01L23/5256 , H01L23/5329 , H01L21/7682
CPC分类号： H01L23/5256 , H01L21/0337 , H01L21/31144 , H01L21/32139 , H01L21/76816 , H01L23/5226 , H01L23/5228 , H01L27/101 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Electrical fuses and resistors having a sublithographic lateral or vertical dimension are provided. A conductive structure comprising a conductor or a semiconductor is formed on a semiconductor substrate. At least one insulator layer is formed on the conductive structure. A recessed area is formed in the at least one insulator layer. Self-assembling block copolymers are applied into the recessed area and annealed to form a fist set of polymer blocks and a second set of polymer blocks. The first set of polymer blocks are etched selective to the second set and the at least one insulator layer. Features having sublithographic dimensions are formed in the at least one insulator layer and/or the conductive structure. Various semiconductor structures having sublithographic dimensions are formed including electrical fuses and resistors.
摘要翻译：提供具有亚光刻横向或垂直尺寸的电熔丝和电阻器。包括导体或半导体的导电结构形成在半导体衬底上。在导电结构上形成至少一个绝缘体层。在所述至少一个绝缘体层中形成凹陷区域。将自组装嵌段共聚物施加到凹陷区域中并退火以形成第一组聚合物嵌段和第二组聚合物嵌段。第一组聚合物嵌段被选择性蚀刻到第二组和至少一个绝缘体层。具有亚光刻尺寸的特征形成在至少一个绝缘体层和/或导电结构中。形成具有亚光刻尺寸的各种半导体结构，其包括电熔丝和电阻器。

5. 发明授权

US08398868B2 Directed self-assembly of block copolymers using segmented prepatterns 有权
标题翻译：使用分段预制图的嵌段共聚物的定向自组装
公开(公告)号：US08398868B2
公开(公告)日：2013-03-19
申请号：US12468391
申请日：2009-05-19
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders
IPC分类号： B44C1/22 , H01L21/302 , H01L21/312
CPC分类号： B81C1/00031 , B81C1/00404 , B81C2201/0149 , H01L21/0337 , H01L21/31144
摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.
摘要翻译：例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。例如，开口的横截面可以由重叠的圆形区域给出。侧壁在各个点处相邻，在那里它们限定突起。将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。在开口中形成离散的，分离的畴，其被去除以形成孔，其可以转移到下面的基底中。这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

6. 发明授权

US08395228B2 Integration process to improve focus leveling within a lot process variation 有权
标题翻译：整合过程可以在很多过程变化中提高焦点调平
公开(公告)号：US08395228B2
公开(公告)日：2013-03-12
申请号：US12941375
申请日：2010-11-08
申请人： Wai-Kin Li , Wu-Song Huang , Dario Leonardo Goldfarb , Martin Glodde , Edward Engbrecht , Yiheng Xu
发明人： Wai-Kin Li , Wu-Song Huang , Dario Leonardo Goldfarb , Martin Glodde , Edward Engbrecht , Yiheng Xu
IPC分类号： H01L21/02
CPC分类号： H01L21/0332 , G03F7/091 , G03F7/094 , G03F9/7026
摘要： A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.
摘要翻译：描述了改善半导体晶片的聚焦调平响应的方法。该方法包括在半导体衬底上组合有机和无机或金属近红外（NIR）硬掩模; 在组合的有机NIR吸收和无机或金属NIR吸收硬掩模上形成抗反射涂层（ARC）层; 以及在所述ARC层上形成光致抗蚀剂层。还描述了半导体结构，其包括基板，位于结构上方的抗蚀剂层; 以及位于衬底上方的吸收层。吸收层包括无机或金属NIR吸收硬掩模层。

7. 发明申请

US20120301828A1 NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM COMPRISING NEAR-INFRARED ABSORPTIVE LAYER 有权
标题翻译：近红外吸收层形成组合物和包含近红外吸收层的多层膜
公开(公告)号：US20120301828A1
公开(公告)日：2012-11-29
申请号：US13118013
申请日：2011-05-27
申请人： Seiichiro TACHIBANA , Kazumi NODA , Masaki OHASHI , Takeshi KINSHO , Wu-Song HUANG , Dario L. GOLDFARB , Wai-Kin LI , Martin GLODDE
发明人： Seiichiro TACHIBANA , Kazumi NODA , Masaki OHASHI , Takeshi KINSHO , Wu-Song HUANG , Dario L. GOLDFARB , Wai-Kin LI , Martin GLODDE
IPC分类号： G03F7/004 , F21V9/04
CPC分类号： G03F7/038 , G03F7/0046 , G03F7/091
摘要： A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R1, R7, R9, and R14 are H, methyl, fluorine or trifluoromethyl, R2 to R6 are H, F, trifluoromethyl, —C(CF3)2OR16, alkyl or alkoxy, at least one of R2 to R6 being F or a fluorinated group, R16, R8 and R13 are H or a monovalent organic group, L1 is a single bond or —C(═O)O—, m is 0 or 1, L2 is a di- or trivalent hydrocarbon group, n is 1 or 2, R10 to R12 are H, hydroxyl, halogen or a monovalent organic group, and R15 is a fluorinated C2-C15 hydrocarbon group.
摘要翻译：包含含有选自式（1）至（4）的重复单元，含芳族环的聚合物，近红外吸收染料和溶剂的聚合物的组合物用于形成近红外吸收膜。 R1，R7，R9和R14是H，甲基，氟或三氟甲基，R2至R6是H，F，三氟甲基，-C（CF3）2OR16，烷基或烷氧基，R2至R6中的至少一个为F或氟化基团R 16，R 8和R 13为H或一价有机基团，L 1为单键或-C（= O）O-，m为0或1，L 2为二价或三价烃基，n为1或 2，R 10〜R 12为H，羟基，卤素或一价有机基团，R 15为氟代C 2 -C 15烃基。

8. 发明授权

US08268542B2 Method for reducing side lobe printing using a barrier layer 有权
标题翻译：使用阻挡层减少旁瓣印刷的方法
公开(公告)号：US08268542B2
公开(公告)日：2012-09-18
申请号：US11949190
申请日：2007-12-03
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/26
CPC分类号： G03F7/095
摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

9. 发明授权

US08227307B2 Method for removing threshold voltage adjusting layer with external acid diffusion process 有权
标题翻译：用外部酸性扩散法去除阈值电压调节层的方法
公开(公告)号：US08227307B2
公开(公告)日：2012-07-24
申请号：US12490353
申请日：2009-06-24
申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
IPC分类号： H01L21/8238 , H01L21/31
CPC分类号： H01L21/31122 , H01L21/823842 , H01L21/823857
摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
摘要翻译：本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

10. 发明授权

US08227180B2 Photolithography focus improvement by reduction of autofocus radiation transmission into substrate 有权
标题翻译：通过将自动聚焦辐射透射减少到基底中来进行光刻聚焦改进
公开(公告)号：US08227180B2
公开(公告)日：2012-07-24
申请号：US13158901
申请日：2011-06-13
申请人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/00 , G03F7/028 , G03F7/11 , G03F7/20 , G03F7/40
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式