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1. 发明授权

US09502659B2 Carbon nanotube field effect transistor 有权
标题翻译：碳纳米管场效应晶体管
公开(公告)号：US09502659B2
公开(公告)日：2016-11-22
申请号：US11893673
申请日：2007-08-16
申请人： Jean-Philippe Bourgoin , Marcelo Goffman , Vincent Derycke , Nicolas Chimot
发明人： Jean-Philippe Bourgoin , Marcelo Goffman , Vincent Derycke , Nicolas Chimot
IPC分类号： H01L51/00 , B82Y10/00 , H01L51/05
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0003 , H01L51/0525 , H01L51/0545 , H01L51/0558
摘要： A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.
摘要翻译：提供了一种基于纳米管的柔性场效应晶体管及其制造方法。根据本发明的场效应晶体管包括至少两个接触电极，分别是漏极和源极，连接到接触电极的导电区，所述区包括基本对准的多个单壁碳纳米管，栅电极用于控制在所述区域中循环的电流和其上沉积有接触和栅电极的柔性基板。导电区中的纳米管密度严格大于每微米10纳米管。

2. 发明申请

US20120092032A1 DEVICE FOR CHARACTERISING ELECTRIC OR ELECTRONIC COMPONENTS 审中-公开
标题翻译：用于表征电子或电子元件的装置
公开(公告)号：US20120092032A1
公开(公告)日：2012-04-19
申请号：US13142007
申请日：2009-12-22
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Laurianne Nougaret , Gilles Dambrine , Henri Happy
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Laurianne Nougaret , Gilles Dambrine , Henri Happy
IPC分类号： G01R27/08
CPC分类号： G01R27/28 , G01R35/005
摘要： The invention relates to an integrated device (PM) for characterising electric or electronic components (DUT), in particular nanometric ones, comprising a substantially insulating substrate (S) on which are provided four conducting pads (P1, P2, P3, P4), at least three resistive pads (R1, R3, R4) connecting said pads together, and a transmission line (CPW) including a signal conductor (Cc) and at least one ground conductor (CL1, CL2), wherein: said resistive pads are arranged so as to connect a first conducting pad to a second and a fourth conducting pad, and to connect said fourth conducting pad to a third conducting pad; the signal conductor of the transmission line is connected to the first conducting pad; and the ground conductor of the transmission line is connected to the third pad.
摘要翻译：本发明涉及一种用于表征电子或电子部件（DUT），特别是纳米电子元件（DUT）的集成器件（PM），其包括基本绝缘的衬底（S），四个导电焊盘（P1，P2，P3，P4）将所述焊盘连接在一起的至少三个电阻焊盘（R1，R3，R4）和包括信号导体（Cc）和至少一个接地导体（CL1，CL2）的传输线（CPW），其中：所述电阻焊盘被布置以将第一导电焊盘连接到第二和第四导电焊盘，并将所述第四导电焊盘连接到第三导电焊盘; 传输线的信号导体连接到第一导电焊盘; 并且传输线的接地导体连接到第三焊盘。

3. 发明授权

US07439562B2 Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it 失效
标题翻译：用于修饰纳米管或纳米线的至少一种电性质的纳米线和掺入其的晶体管的方法
公开(公告)号：US07439562B2
公开(公告)日：2008-10-21
申请号：US10552855
申请日：2003-04-22
申请人： Stéphane Auvray , Jean-Philippe Bourgoin , Vincent Derycke , Marcelo Goffman
发明人： Stéphane Auvray , Jean-Philippe Bourgoin , Vincent Derycke , Marcelo Goffman
IPC分类号： C01B31/02 , G01N27/12 , H01L51/40
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B2202/22 , G01N27/12 , G11C2213/17 , H01L51/002 , H01L51/0048 , H01L51/0541 , H01L51/0545 , Y10S977/746 , Y10S977/847 , Y10S977/938 , Y10S977/957
摘要： The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2 and R3 being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.
摘要翻译：本发明涉及一种用于修饰碳纳米管或纳米线的至少电子性质的方法，包括将所述纳米管或纳米线暴露于具有式（I）的酸，其中R 1，R 2 R 3和R 3在包含（H，F，Cl，Br，I）的基团中选自具有至少一个R 1，R 2， 2和R 3不同于H。纳米管或纳米线的至少一部分可以是场效应晶体管的沟道区。

4. 发明授权

US06924509B2 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer 失效
标题翻译：大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法
公开(公告)号：US06924509B2
公开(公告)日：2005-08-02
申请号：US10947706
申请日：2004-09-23
申请人： Vincent Derycke , Gérald Dujardin , Andrew Mayne , Patrick Soukiassian
发明人： Vincent Derycke , Gérald Dujardin , Andrew Mayne , Patrick Soukiassian
IPC分类号： C30B29/04 , C30B1/00 , C30B1/10 , C30B33/00 , H01L29/16 , H01L31/0312
CPC分类号： H01L29/1602 , C30B1/00 , C30B29/04 , C30B29/36 , C30B33/00 , H01L29/16 , Y10S117/902
摘要： Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer.According to the invention, a monocrystalline substrate (2) is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2×2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C≡C (4) of sp configuration, into a plane of dimers C—C (8) of sp3 configuration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.
摘要翻译：大尺寸的单原子和单晶层，金刚石型碳，以及制造该层的方法。根据本发明，根据重建c（2x2），由碳原子平面终止的SiC中形成单晶衬底（2），并且进行至少一个退火，能够将该原子面转变为平面的sp构型的二聚体C≡C（4）进入sp 3+配置的二聚体CC（8）的平面。应用于微电子，光学，光电子学，微机电和生物材料。

5. 发明授权

US07323730B2 Optically-configurable nanotube or nanowire semiconductor device 有权
标题翻译：光学可配置纳米管或纳米线半导体器件
公开(公告)号：US07323730B2
公开(公告)日：2008-01-29
申请号：US11185153
申请日：2005-07-20
申请人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
发明人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
IPC分类号： H01L31/062
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/02 , G11C13/025 , G11C13/04 , H01L51/0048 , H01L51/0545 , H01L51/428 , Y02E10/549 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
摘要翻译：本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

6. 发明授权

US07982251B2 Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same 有权
标题翻译：用于检测/存储电磁束的装置，其制造方法及其用途以及结合其的成像器
公开(公告)号：US07982251B2
公开(公告)日：2011-07-19
申请号：US12282584
申请日：2007-03-13
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
IPC分类号： H01L31/10
CPC分类号： B82Y10/00 , H01L27/305 , H01L51/0036 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/428 , Y02E10/549 , Y02P70/521 , Y10S977/834 , Y10S977/938 , Y10S977/954
摘要： The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ∈, which satisfy ∈r>0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.
摘要翻译：本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极。所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ∈，其满足∈r> 0.2nm * 1，使得曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

7. 发明申请

US20070085155A1 Optically-configurable nanotube or nanowire semiconductor device 有权
标题翻译：光学可配置纳米管或纳米线半导体器件
公开(公告)号：US20070085155A1
公开(公告)日：2007-04-19
申请号：US11185153
申请日：2005-07-20
申请人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
发明人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
IPC分类号： H01L29/82
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/02 , G11C13/025 , G11C13/04 , H01L51/0048 , H01L51/0545 , H01L51/428 , Y02E10/549 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
摘要翻译：本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

8. 发明授权

US07008886B2 Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process 失效
标题翻译：用于处理半导体材料的表面，特别是使用氢的方法和使用该方法获得的表面的方法
公开(公告)号：US07008886B2
公开(公告)日：2006-03-07
申请号：US10473279
申请日：2002-04-17
申请人： Vincent Derycke , Patrick Soukiassan
发明人： Vincent Derycke , Patrick Soukiassan
IPC分类号： H01L21/00
CPC分类号： C30B29/06 , C30B33/00 , H01L21/0445 , H01L21/045 , H01L21/048 , H01L21/28562 , H01L29/1608 , Y10S438/931 , Y10S438/974
摘要： A process treats a surface of a semiconductor material in order to put the surface into a predetermined electrical state. The semiconductor material is preferably monocrystalline. The process includes (a) preparing the surface of the semiconductor material such that the surface has a controlled organization at an atomic scale such that the surface is capable of combining with a chosen material, and (b) combining the surface thus prepared with a material chosen from among hydrogen, molecules containing hydrogen, metals, organic molecules and inorganic molecules, wherein the preparing and the combining the surface with the material cooperate to obtain the predetermined electrical state of the surface.
摘要翻译：一种工艺处理半导体材料的表面以使表面进入预定的电气状态。半导体材料优选为单晶。该方法包括（a）制备半导体材料的表面，使得表面具有原子尺度的受控组织，使得表面能够与所选择的材料组合，和（b）将由此制备的表面与材料组合选自氢，分子含氢，金属，有机分子和无机分子，其中制备和组合表面与材料协调以获得表面的预定电状态。

9. 发明授权

US06843850B2 Catalyst-free growth of single-wall carbon nanotubes 有权
标题翻译：单壁碳纳米管的无催化剂生长
公开(公告)号：US06843850B2
公开(公告)日：2005-01-18
申请号：US10226733
申请日：2002-08-23
申请人： Phaedon Avouris , Vincent Derycke , Richard Martel , Marko Radosavljevic
发明人： Phaedon Avouris , Vincent Derycke , Richard Martel , Marko Radosavljevic
IPC分类号： C30B1/02 , C30B25/02
CPC分类号： C30B1/02 , B82Y30/00 , C30B29/66 , Y10S977/75 , Y10S977/843
摘要： A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.
摘要翻译：用于生长单壁纳米管的方法包括提供包括硅面和碳面的碳化硅半导体晶片，并且在至少约1300摄氏度的温度下在真空中退火碳化硅半导体晶片，引起形成单壁硅表面上的碳纳米管。

10. 发明申请

US20090179240A1 DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME 有权
标题翻译：用于检测/存储电磁波的装置，制造它们的方法及其使用方法和包含它们的成像器
公开(公告)号：US20090179240A1
公开(公告)日：2009-07-16
申请号：US12282584
申请日：2007-03-13
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
IPC分类号： H01L31/112 , H01L21/28
CPC分类号： B82Y10/00 , H01L27/305 , H01L51/0036 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/428 , Y02E10/549 , Y02P70/521 , Y10S977/834 , Y10S977/938 , Y10S977/954
摘要： The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ε, which satisfy εr>0.2 nm* 1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.
摘要翻译：本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极。所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ε，其满足epsilon> 0.2nm * 1，使得在曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

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