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1. 发明授权

US07982251B2 Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same 有权
标题翻译：用于检测/存储电磁束的装置，其制造方法及其用途以及结合其的成像器
公开(公告)号：US07982251B2
公开(公告)日：2011-07-19
申请号：US12282584
申请日：2007-03-13
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
IPC分类号： H01L31/10
CPC分类号： B82Y10/00 , H01L27/305 , H01L51/0036 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/428 , Y02E10/549 , Y02P70/521 , Y10S977/834 , Y10S977/938 , Y10S977/954
摘要： The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ∈, which satisfy ∈r>0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.
摘要翻译：本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极。所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ∈，其满足∈r> 0.2nm * 1，使得曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

2. 发明申请

US20070085155A1 Optically-configurable nanotube or nanowire semiconductor device 有权
标题翻译：光学可配置纳米管或纳米线半导体器件
公开(公告)号：US20070085155A1
公开(公告)日：2007-04-19
申请号：US11185153
申请日：2005-07-20
申请人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
发明人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
IPC分类号： H01L29/82
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/02 , G11C13/025 , G11C13/04 , H01L51/0048 , H01L51/0545 , H01L51/428 , Y02E10/549 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
摘要翻译：本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

3. 发明授权

US07323730B2 Optically-configurable nanotube or nanowire semiconductor device 有权
标题翻译：光学可配置纳米管或纳米线半导体器件
公开(公告)号：US07323730B2
公开(公告)日：2008-01-29
申请号：US11185153
申请日：2005-07-20
申请人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
发明人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
IPC分类号： H01L31/062
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/02 , G11C13/025 , G11C13/04 , H01L51/0048 , H01L51/0545 , H01L51/428 , Y02E10/549 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
摘要翻译：本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

4. 发明申请

US20090179240A1 DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME 有权
标题翻译：用于检测/存储电磁波的装置，制造它们的方法及其使用方法和包含它们的成像器
公开(公告)号：US20090179240A1
公开(公告)日：2009-07-16
申请号：US12282584
申请日：2007-03-13
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
IPC分类号： H01L31/112 , H01L21/28
CPC分类号： B82Y10/00 , H01L27/305 , H01L51/0036 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/428 , Y02E10/549 , Y02P70/521 , Y10S977/834 , Y10S977/938 , Y10S977/954
摘要： The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ε, which satisfy εr>0.2 nm* 1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.
摘要翻译：本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极。所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ε，其满足epsilon> 0.2nm * 1，使得在曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

5. 发明授权

US08451644B2 Non-volatile sampler 有权
标题翻译：非易失性采样器
公开(公告)号：US08451644B2
公开(公告)日：2013-05-28
申请号：US12825607
申请日：2010-06-29
申请人： Julien Borghetti , David A. Fattal , John Paul Strachan
发明人： Julien Borghetti , David A. Fattal , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/82
CPC分类号： H01L27/101 , G11C5/063 , G11C13/0007 , G11C27/02
摘要： A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied.
摘要翻译：一种非易失性采样器，包括用于接收待采样的输入信号的行线，与多条列线相交的行线，非易失性存储元件设置在行线和列线之间的交点处; 连接到列线的偏置电压源，偏置电压源，用于选择性地将偏置电压施加到至少一个非易失性存储元件，以使存储元件中的至少一个将输入信号的采样存储在施加偏置电压的情况。

6. 发明申请

US20120146184A1 TWO TERMINAL MEMCAPACITOR DEVICE 有权
标题翻译：两端终端设备
公开(公告)号：US20120146184A1
公开(公告)日：2012-06-14
申请号：US13383981
申请日：2009-08-28
申请人： Matthew Pickett , Julien Borghetti , Jianhua Yang
发明人： Matthew Pickett , Julien Borghetti , Jianhua Yang
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： G11C11/24 , H01G7/06 , H01L27/101 , H01L28/40 , H01L29/167 , H01L29/93
摘要： A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
摘要翻译：电容器装置包括插入在第一电极和第二电极之间的存储电容矩阵。电容矩阵包括具有第一衰减时间常数的深层掺杂剂和具有第二衰减时间常数的浅层掺杂剂。第二衰减时间常数明显短于第一衰减时间常数。存储器件器件的电容取决于施加在存储电容矩阵上的初始电压，并且存储器件器件的时间相关的电容变化取决于第一衰减时间常数。还提供了一种用于形成电容器件的方法。

7. 发明申请

US20110317469A1 NON-VOLATILE SAMPLER 有权
标题翻译：非挥发性取样器
公开(公告)号：US20110317469A1
公开(公告)日：2011-12-29
申请号：US12825607
申请日：2010-06-29
申请人： Julien Borghetti , David A. Fattal , John Paul Strachan
发明人： Julien Borghetti , David A. Fattal , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/82
CPC分类号： H01L27/101 , G11C5/063 , G11C13/0007 , G11C27/02
摘要： A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied.
摘要翻译：一种非易失性采样器，包括用于接收待采样的输入信号的行线，与多条列线相交的行线，非易失性存储元件设置在行线和列线之间的交点处; 连接到列线的偏置电压源，偏置电压源，用于选择性地将偏置电压施加到至少一个非易失性存储元件，以使存储元件中的至少一个将输入信号的采样存储在施加偏置电压的情况。

8. 发明申请

US20110303890A1 Electrically Actuated Device 有权
标题翻译：电动执行装置
公开(公告)号：US20110303890A1
公开(公告)日：2011-12-15
申请号：US13142504
申请日：2011-06-28
申请人： Matthew D. Pickett , Hans S. Cho , Julien Borghetti , Duncan Stewart
发明人： Matthew D. Pickett , Hans S. Cho , Julien Borghetti , Duncan Stewart
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/165
摘要： An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.
摘要翻译：电驱动装置包括第一电极和第二电极，其以非零角度与第一电极交叉，从而在它们之间形成接合部。在第一电极和接合处建立材料。材料的至少一部分是矩阵区域。电流传导通道在第一和第二电极之间基本垂直地延伸，并且限定在位于结处的材料的至少一部分中。电流传导通道在其中具有受控的掺杂剂分布。

9. 发明申请

US20110279135A1 MEMRISTOR ADJUSTMENT USING STORED CHARGE 审中-公开
标题翻译：使用存储充电器进行调整
公开(公告)号：US20110279135A1
公开(公告)日：2011-11-17
申请号：US12781441
申请日：2010-05-17
申请人： Julien Borghetti , Bilberto Medeiros Ribeiro , Dmitri Borisovich Strukov
发明人： Julien Borghetti , Bilberto Medeiros Ribeiro , Dmitri Borisovich Strukov
IPC分类号： G01R27/08
CPC分类号： G01R31/2637 , G11C13/0002 , G11C13/0007 , G11C13/0038 , G11C13/0064 , G11C13/0069 , G11C2013/0066
摘要： Methods and apparatus pertaining to memory resistors are provided. Electronic circuitry determines energy for changing a non-volatile resistance of a memristor from a present value to a target value. An electric charge corresponding to the energy is stored. An electric pulse is applied to the memristor using the stored charge. The newly adjusted resistance of the memristor is sensed and compared to the target value. Additional electric pulses can be applied in accordance with the comparison. Memristor adjustment by way of feedback control is thus contemplated by the present teachings.
摘要翻译：提供了与存储电阻有关的方法和装置。电子电路确定用于将忆阻器的非易失性电阻从当前值改变为目标值的能量。存储对应于能量的电荷。使用存储的电荷将电脉冲施加到忆阻器。忆阻器的新调节电阻被感测并与目标值进行比较。根据比较可以应用额外的电脉冲。因此通过反馈控制进行的忆阻器调节由本教导设想。

10. 发明授权

US09793275B2 Multilayer circuit 有权
公开(公告)号：US09793275B2
公开(公告)日：2017-10-17
申请号：US13259177
申请日：2009-08-14
申请人： Dmitri Borisovich Strukov , Julien Borghetti
发明人： Dmitri Borisovich Strukov , Julien Borghetti
IPC分类号： H01L23/48 , H01L29/792 , H01L23/52 , H01L21/44 , H01L27/105 , H01L27/06 , H01L27/10 , H01L27/112 , H01L27/24
CPC分类号： H01L27/105 , H01L27/0688 , H01L27/101 , H01L27/112 , H01L27/11286 , H01L27/24
摘要： A multilayer circuit (400) includes a base layer (205) which has a number of base vias (247, 415), a first overlying layer (215) formed on the base layer (205) and having a first routing section (210) and a second overlying layer (220) formed on the first overlying layer (215). The second overlying layer (220) has a second routing section (210) and is formed using the same set of masks. The first routing section (210) and the second routing section (210) form a unique electrical pathway (248) between a base via (247) and an element in an overlying layer. A method for forming a multilayer circuit is also provided.

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