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1. 发明授权

US07456116B2 Gap-fill depositions in the formation of silicon containing dielectric materials 失效
标题翻译：在形成含硅介电材料时的间隙填充沉积
公开(公告)号：US07456116B2
公开(公告)日：2008-11-25
申请号：US11018381
申请日：2004-12-20
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45512 , C23C16/401 , C23C16/45523 , C23C16/52
摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
摘要翻译：一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS，和TOMCATS。该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

2. 发明授权

US07204888B2 Lift pin assembly for substrate processing 有权
标题翻译：提升销组件进行基板加工
公开(公告)号：US07204888B2
公开(公告)日：2007-04-17
申请号：US10428967
申请日：2003-05-01
申请人： Toan Q. Tran , Daniel S. Herkalo , Yen-Kun V. Wang , Jin Ho Lee , Dong Hyung Lee , Jang Seok Oh , Won B. Bang
发明人： Toan Q. Tran , Daniel S. Herkalo , Yen-Kun V. Wang , Jin Ho Lee , Dong Hyung Lee , Jang Seok Oh , Won B. Bang
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68742
摘要： Embodiments of the present invention provide an apparatus for constraining and supporting the lift pins to prevent or minimize lateral movement of the lift pins that causes substrate hand-off problems and associated degradation in substrate processing characteristics and results. In one embodiment, a lift pin assembly for manipulating a substrate above a support surface of a substrate support comprises a plurality of lift pins movable between an up position and a down position. The lift pins include top ends and bottom ends. The top ends are configured to be lifted above the support surface of the substrate support to contact a bottom surface of the substrate in the up position. The top ends are configured to be positioned at or below the support surface of the substrate support in the down position. A lift pin connecting member is attached to the plurality of lift pins at attachment locations at or near the bottom ends of the lift pins to maintain fixed relative distances between the lift pins at the attachment locations and to move with the lift pins between the up position and the down position.
摘要翻译：本发明的实施例提供了一种用于约束和支撑提升销的装置，以防止或最小化提升销的横向移动，这导致基板切换问题以及相关的基板处理特性和结果的退化。在一个实施例中，用于在衬底支撑件的支撑表面上方操作衬底的提升销组件包括可在上升位置和下降位置之间移动的多个提升销。提升销包括顶端和底端。顶端构造成被提升在基板支撑件的支撑表面上方以在上方位置接触基板的底表面。顶端构造成位于下方位置处的基板支撑件的支撑表面上或下方。提升销连接构件在提升销的底端处或附近的附接位置处附接到多个提升销，以在附接位置处保持提升销之间的固定的相对距离，并且随着提升销在上部位置之间移动和下降位置。

3. 发明申请

US20080115726A1 GAP-FILL DEPOSITIONS INTRODUCING HYDROXYL-CONTAINING PRECURSORS IN THE FORMATION OF SILICON CONTAINING DIELECTRIC MATERIALS 审中-公开
标题翻译： GAP-FILL沉积物介绍含羟基的前驱体在形成含硅介质材料
公开(公告)号：US20080115726A1
公开(公告)日：2008-05-22
申请号：US11941793
申请日：2007-11-16
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
IPC分类号： B05C11/00
CPC分类号： H01L21/76837 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/76224
摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
摘要翻译：一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

4. 发明授权

US07335609B2 Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials 有权
标题翻译：在含硅介电材料的形成中引入含羟基的前体的间隙填充沉积
公开(公告)号：US07335609B2
公开(公告)日：2008-02-26
申请号：US11213612
申请日：2005-08-26
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
IPC分类号： H01L21/31 , H01L21/76
CPC分类号： H01L21/76837 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/76224
摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
摘要翻译：一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

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