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1. 发明申请

US20120074514A1 ETCH-RESISTANT COATING ON SENSOR WAFERS FOR IN-SITU MEASUREMENT 审中-公开
标题翻译：用于现场测量的传感器波纹耐蚀涂层
公开(公告)号：US20120074514A1
公开(公告)日：2012-03-29
申请号：US12892841
申请日：2010-09-28
申请人： ANDREW NGUYEN , FARHAT QULI , MEI SUN , VASUDEV VENKATESAN
发明人： ANDREW NGUYEN , FARHAT QULI , MEI SUN , VASUDEV VENKATESAN
IPC分类号： H01L31/058 , H01L21/50
摘要： A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.
摘要翻译：传感器晶片可以被配置用于在蚀刻工艺期间进行参数的原位测量。传感器晶片可以包括基板，盖子和位于基板和盖子之间的一个或多个部件。在盖和/或基底的一个或多个表面上形成耐蚀刻涂层。涂层被配置为抵抗蚀刻工艺，其蚀刻覆盖物和/或衬底比与保护涂层相同或更厚的标准薄膜材料更长的时间。

2. 发明授权

US5371382A Amorphous silicon rectifying contact on diamond and method for making same 失效
标题翻译：金刚石上的非晶硅整流接触及其制作方法
公开(公告)号：US5371382A
公开(公告)日：1994-12-06
申请号：US874637
申请日：1992-04-27
申请人： Vasudev Venkatesan , Dale G. Thompson , Kalyankumar Das
发明人： Vasudev Venkatesan , Dale G. Thompson , Kalyankumar Das
IPC分类号： H01L21/203 , H01L21/04 , H01L21/28 , H01L29/16 , H01L29/47 , H01L29/861 , H01L45/00 , H01L29/161 , H01L29/20 , H01L29/48
CPC分类号： H01L29/1602 , H01L21/0435 , H01L29/47
摘要： A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a doped polycrystalline diamond layer or a natural IIb single crystal diamond. The amorphous silicon layer may be formed by sputter deposition from doped silicon targets. A subsequent heating of the thus formed rectifying contact lowers the forward resistance of the contact by activating additional dopant atoms within the amorphous silicon layer.
摘要翻译：在高温下使用的整流接触件包括半导体金刚石层和其上的掺杂非晶硅层。非晶硅层可以掺杂有p型或n型掺杂剂。半导体金刚石可以是掺杂多晶金刚石层或天然IIb单晶金刚石。可以通过从掺杂的硅靶的溅射沉积形成非晶硅层。由此形成的整流接触的随后的加热通过激活非晶硅层内的附加掺杂剂原子来降低接触的正向电阻。

3. 发明授权

US5654562A Latch resistant insulated gate semiconductor device 失效
标题翻译：防闩绝缘栅半导体器件
公开(公告)号：US5654562A
公开(公告)日：1997-08-05
申请号：US398265
申请日：1995-03-03
申请人： William L. Fragale , Paul J. Groenig , Vasudev Venkatesan
发明人： William L. Fragale , Paul J. Groenig , Vasudev Venkatesan
IPC分类号： H01L29/78 , H01L27/04 , H01L29/06 , H01L29/739 , H01L29/749
CPC分类号： H01L29/0696 , H01L29/7395
摘要： An insulated gate semiconductor device (10) is fabricated by providing at least one ballast resistor (40) having a sheet resistance of at least one square. The ballast resistor (40) is formed in the emitter region (17) between two adjacent portions of the base region (26) at the top surface of the semiconductor body in which the device (10) is fabricated. The ballast resistor (40) improves the latch resistance of the device (10) in overload conditions.
摘要翻译：通过提供至少一个具有至少一平方的薄层电阻的镇流电阻器（40）来制造绝缘栅半导体器件（10）。镇流电阻器（40）在制造器件（10）的半导体主体的顶表面处在基极区域（26）的两个相邻部分之间的发射极区域（17）中形成。镇流电阻器（40）在过载条件下提高了器件（10）的锁定电阻。

4. 发明授权

US10720350B2 Etch-resistant coating on sensor wafers for in-situ measurement 有权
公开(公告)号：US10720350B2
公开(公告)日：2020-07-21
申请号：US12892841
申请日：2010-09-28
申请人： Andrew Nguyen , Farhat Quli , Mei Sun , Vasudev Venkatesan
发明人： Andrew Nguyen , Farhat Quli , Mei Sun , Vasudev Venkatesan
IPC分类号： H01L23/28 , H01L21/67 , H01J37/32 , G01J5/04
摘要： A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.

5. 发明授权

US06383885B1 Bipolar transistor with improved reverse breakdown characteristics 有权
标题翻译：具有改善反向击穿特性的双极晶体管
公开(公告)号：US06383885B1
公开(公告)日：2002-05-07
申请号：US09427824
申请日：1999-10-27
申请人： Vasudev Venkatesan , Patrice Parris
发明人： Vasudev Venkatesan , Patrice Parris
IPC分类号： H01L218238
CPC分类号： H01L21/8249 , H01L29/1004 , H01L29/7322
摘要： A bipolar transistor (10) in an IC includes a semiconductor wafer defining a collector area (14) with a first conductivity type, a base area (20) with a second conductivity type formed in the collector area (14), and an emitter formed in the base area. A field oxide is positioned on the surface of the semiconductor wafer surrounding the emitter (30) and substantially covering the base area (20) and an implant of the second conductivity type is positioned in the base area (20) between and spaced from the emitter (30) and the outer periphery of the base area (20). The implant further has a heavier concentration of the second conductivity type than the base area to compensate for loss of the second conductivity type under the field oxide and to separate the transistor current path from the breakdown path, which improves the collector to emitter breakdown voltage (BVCEO) while still maintaining a high beta.
摘要翻译： IC中的双极晶体管（10）包括限定具有第一导电类型的集电极区域（14）的半导体晶片，形成在集电区域（14）中的具有第二导电类型的基极区域（20）和形成的发射极在基地区。场氧化物位于围绕发射器（30）的半导体晶片的表面上并且基本上覆盖基极区域（20），并且第二导电类型的注入位于基极区域（20）之间并且与发射极间隔开（30）和基部区域（20）的外周。植入物还具有比基底区域更重的第二导电类型的浓度，以补偿场氧化物下的第二导电类型的损失并且将晶体管电流路径与击穿路径分离，这提高了集电极到发射极击穿电压（ BVCEO），同时仍然保持高的beta。

6. 发明授权

US5254862A Diamond field-effect transistor with a particular boron distribution profile 失效
标题翻译：具有特定硼分布特性的金刚石场效应晶体管
公开(公告)号：US5254862A
公开(公告)日：1993-10-19
申请号：US744598
申请日：1991-08-14
申请人： Das Kalyankjumar , David L. Dreifus , Alison J. Tessmer , Vasudev Venkatesan
发明人： Das Kalyankjumar , David L. Dreifus , Alison J. Tessmer , Vasudev Venkatesan
IPC分类号： H01L21/28 , H01L29/16 , H01L29/45 , H01L29/78 , H01L31/0132 , H01L29/167 , H01L29/207 , H01L29/76
CPC分类号： H01L29/1602 , H01L29/45
摘要： An insulated gate field-effect transistor including an active diamond layer having a desired boron doping concentration profile. The boron doping concentration profile generally decreases with increasing depth into the diamond layer so that the active channel has a doping sufficient for field-effect transistor operation. An insulated gate electrode is formed on the highly doped surface and provides a low gate leakage current and passivates the surface of the diamond layer.
摘要翻译：一种绝缘栅场效应晶体管，其包括具有期望的硼掺杂浓度分布的有源金刚石层。硼掺杂浓度分布通常随着进入金刚石层的深度增加而减小，使得有源沟道具有足以用于场效应晶体管操作的掺杂。绝缘栅电极形成在高度掺杂的表面上，并提供低栅极泄漏电流并钝化金刚石层的表面。

7. 发明授权

US5362975A Diamond-based chemical sensors 失效
标题翻译：基于钻石的化学传感器
公开(公告)号：US5362975A
公开(公告)日：1994-11-08
申请号：US89170
申请日：1993-07-08
申请人： Jesko von Windheim , Vasudev Venkatesan
发明人： Jesko von Windheim , Vasudev Venkatesan
IPC分类号： G01N27/12 , G01N27/00 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/872 , H01L29/66
CPC分类号： H01L29/1602 , G01N27/129 , H01L29/45 , H01L29/872
摘要： A chemical sensor includes a diode or a transistor fabricated in diamond. A diamond-based diode chemical sensor includes a first diamond layer of first conductivity type and a second diamond or non-diamond layer of second conductivity type. A relatively highly doped region is formed in the first diamond layer, adjacent an electrical contact to reduce the frequency dependance of the sensor's capacitance/voltage characteristic. A diamond-based transistor sensor includes a controlling electrode such as a gate which is configured to allow a chemical external to the transistor to alter the characteristics of the transistor. Relatively highly doped regions are formed adjacent the transistor's controlling electrodes, such as the source and drain. A heater is thermally coupled to the sensor for heating the sensor to a predetermined operating temperature. A temperature monitor is also coupled to the sensor for monitoring the sensor temperature.
摘要翻译：化学传感器包括二极管或以金刚石制造的晶体管。金刚石二极管化学传感器包括第一导电类型的第一金刚石层和第二导电类型的第二金刚石或非金刚石层。在第一金刚石层中形成相对高掺杂的区域，与电触点相邻，以降低传感器电容/电压特性的频率依赖性。基于金刚石的晶体管传感器包括诸如栅极的控制电极，其被配置为允许晶体管外部的化学物质改变晶体管的特性。在晶体管的控制电极（例如源极和漏极）附近形成相对高掺杂的区域。加热器热耦合到传感器，用于将传感器加热到预定的工作温度。温度监测器还耦合到传感器用于监测传感器温度。

8. 发明授权

US5285084A Diamond schottky diodes and gas sensors fabricated therefrom 失效
标题翻译：金刚石肖特基二极管和由此制造的气体传感器
公开(公告)号：US5285084A
公开(公告)日：1994-02-08
申请号：US939446
申请日：1992-09-02
申请人： Jesko von Windheim , Vasudev Venkatesan
发明人： Jesko von Windheim , Vasudev Venkatesan
IPC分类号： G01N27/00 , H01L29/16 , H01L29/45 , H01L29/872 , H01L29/66
CPC分类号： H01L29/872 , G01N27/129 , H01L29/1602 , H01L29/45
摘要： Schottky diodes and gas sensors include a diamond layer having a Schottky contact thereon and an ohmic contact thereon, wherein the diamond layer includes a highly doped region adjacent the ohmic contact to provide a low resistance ohmic contact. Dramatically reduced frequency dependence of the capacitance/voltage characteristic of Schottky diodes and gas sensors formed thereby, compared to Schottky diodes and gas sensors which do not include the highly doped region adjacent the ohmic contact, is provided. The highly doped region is preferably boron doped at a concentration of at least 10.sup.20 atoms per cubic centimeter to form an ohmic contact with a contact resistance of less than 10.sup.-3 .OMEGA.-cm.sup.2. The ohmic contact is preferably a back contact on the face of the diamond layer opposite the Schottky contact.
摘要翻译：肖特基二极管和气体传感器包括其上具有肖特基接触和其上的欧姆接触的金刚石层，其中金刚石层包括邻近欧姆接触的高掺杂区域以提供低电阻欧姆接触。提供了与肖特基二极管和气体传感器相比较的肖特基二极管和由此形成的气体传感器的电容/电压特性显着降低的频率依赖性，其不包括与欧姆接触相邻的高掺杂区域。高掺杂区域优选以至少1020个原子/立方厘米的浓度掺杂硼以形成具有小于10-3（Ω·cm-cm）的接触电阻的欧姆接触。欧姆接触优选为与肖特基接触相对的金刚石层的表面上的背接触。

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