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1. 发明授权

US4618510A Pre-passivated sub-micrometer gate electrodes for MESFET devices 失效
标题翻译：用于MESFET器件的预钝化亚微米栅电极
公开(公告)号：US4618510A
公开(公告)日：1986-10-21
申请号：US634250
申请日：1984-09-05
申请人： Tun S. Tan
发明人： Tun S. Tan
IPC分类号： H01L29/812 , H01L21/285 , H01L21/338 , H01L29/80
CPC分类号： H01L29/66863 , H01L21/28587 , H01L21/28593 , Y10S438/95 , Y10S438/951
摘要： A method of fabricating sub-micrometer gates in a semiconductor device is disclosed in which a pre-passivation layer is formed over the gate region during fabrication. This pre-passivation layer protects the gate and underlying gate trough region from surface contamination during device fabrication. Sub-micrometer gate lengths are obtained by use of optical lithography, e.g., angle-shadow metal evaporation techniques and chemical lift-off methods.
摘要翻译：公开了一种在半导体器件中制造亚微米栅极的方法，其中在制造期间在栅极区域上形成预钝化层。该预钝化层在器件制造期间保护栅极和下面的栅极谷区免受表面污染。通过使用光学平版印刷法，例如角度阴影金属蒸发技术和化学剥离方法来获得亚微米栅极长度。

2. 发明授权

US07265849B2 Systems and methods for determining the spectral content of an optical signal 失效
标题翻译：用于确定光信号的光谱含量的系统和方法
公开(公告)号：US07265849B2
公开(公告)日：2007-09-04
申请号：US10670538
申请日：2003-09-25
申请人： Mohan Gurunathan , William Ian McAlexander , Tun S. Tan
发明人： Mohan Gurunathan , William Ian McAlexander , Tun S. Tan
IPC分类号： G01B9/02
CPC分类号： G01J9/04
摘要： In one embodiment, a method determines the spectral content of an optical signal. Specifically, the optical signal and an optical local oscillator (LO) signal are provided to inputs of an optical hybrid (e.g., an N×N optical coupler where N is greater than two). The phase-diverse components from the optical hybrid are photodetected allowing for mixing of the optical signal and the optical local oscillator. Bandpass filtering is performed to eliminate or reduce relative intensity noise (RIN). The filtered signals are mixed with an electrical LO signal. A quadrature representation of a phase-diverse heterodyne signal is generated from signals from the mixing. The negative image and the positive image from the quadrature representation are separated. The spectral content of the optical signal is determined from the images.
摘要翻译：在一个实施例中，一种方法确定光信号的频谱内容。具体地，将光信号和光本地振荡器（LO）信号提供给光混合（例如，N大于2的NxN光耦合器）的输入。来自光学混合物的相位不同的分量被光电检测，允许光学信号和光学本地振荡器的混合。执行带通滤波以消除或减少相对强度噪声（RIN）。经滤波的信号与电LO信号混合。相位分集外差信号的正交表示由混合信号产生。来自正交表示的负像和正像被分离。根据图像确定光信号的光谱内容。

3. 发明授权

US06521914B2 III-Nitride Light-emitting device with increased light generating capability 有权
标题翻译： III型氮化物具有增加的发光能力的发光装置
公开(公告)号：US06521914B2
公开(公告)日：2003-02-18
申请号：US10112175
申请日：2002-03-29
申请人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
发明人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
IPC分类号： H01L29267
CPC分类号： H01L33/62 , G09G2360/148 , H01L25/167 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05572 , H01L2224/14 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
摘要翻译：本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。可以使用底座来提供LED管芯和封装之间的电连接和热连接。底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。最后，器件可以包括高折射率（n> 1.8）的覆盖层。

4. 发明授权

US06323063B2 Forming LED having angled sides for increased side light extraction 有权
标题翻译：成型LED具有成角度的侧面，用于增加侧光提取
公开(公告)号：US06323063B2
公开(公告)日：2001-11-27
申请号：US09732459
申请日：2000-12-06
申请人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
发明人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
IPC分类号： H01L2100
CPC分类号： H01L33/20 , H01L33/02
摘要： The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
摘要翻译：本发明是一种用于设计半导体发光器件的方法，使得侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以改善光提取提高总光输出效率。选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。

5. 发明授权

US07466929B2 Method and system for superheterodyne detection of an optical input signal 失效
标题翻译：光输入信号的超外差检测方法和系统
公开(公告)号：US07466929B2
公开(公告)日：2008-12-16
申请号：US10800073
申请日：2004-03-11
申请人： Douglas M. Baney , Tun S. Tan , Bogdan Szafraniec
发明人： Douglas M. Baney , Tun S. Tan , Bogdan Szafraniec
IPC分类号： H04B10/06
CPC分类号： H04B10/64 , H04B10/60
摘要： A system and method for superheterodyne detection in accordance with the invention. The system comprises a first conversion unit for performing a first heterodyne operation on an optical input signal to generate an electrical IF signal. A second conversion unit is electrically or optically coupled to the first conversion unit. The second conversion unit performs a second heterodyne operation to generate an electrical output signal suitable for signal processing.
摘要翻译：根据本发明的用于超外差检测的系统和方法。该系统包括用于对光输入信号执行第一外差操作以产生电IF信号的第一转换单元。第二转换单元电或光耦合到第一转换单元。第二转换单元执行第二外差操作以产生适于信号处理的电输出信号。

6. 发明授权

US07280770B2 Polarization diverse optical receiver using a polarization-dependent beam splitter 失效
标题翻译：使用偏振相关光束分离器的偏振多种光接收机
公开(公告)号：US07280770B2
公开(公告)日：2007-10-09
申请号：US10848229
申请日：2004-05-18
申请人： Tun S. Tan , Doug Baney , William Ian McAlexander , Richard P. Tella
发明人： Tun S. Tan , Doug Baney , William Ian McAlexander , Richard P. Tella
IPC分类号： H04B10/00
CPC分类号： H04B10/61 , H04B10/614 , H04B10/64
摘要： A receiver and method for using the same to process optical signals is disclosed. The receiver includes an optical coupler and a polarization dependent beam splitter. The optical coupler combines an input signal and a local oscillator signal into a first combined signal. The optical coupler includes a polarization filter that operates on the local oscillator to provide a linearly polarized signal having a predetermined LO polarization direction.
摘要翻译：公开了一种用于使用它来处理光信号的接收机和方法。接收机包括光耦合器和偏振相关光束分离器。光耦合器将输入信号和本地振荡器信号组合成第一组合信号。光耦合器包括对本地振荡器进行操作以提供具有预定的LO极化方向的线偏振信号的偏振滤波器。

7. 发明授权

US07268371B2 Light extraction from a semiconductor light emitting device via chip shaping 有权
标题翻译：通过芯片成形从半导体发光器件进行光提取
公开(公告)号：US07268371B2
公开(公告)日：2007-09-11
申请号：US11230722
申请日：2005-09-19
申请人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
发明人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
IPC分类号： H01L29/22 , H01L29/227
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
摘要翻译：公开了一种用于设计半导体发光器件的方法，其中侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以提高光提取效率，提高总光输出效率。选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。

8. 发明授权

US06486499B1 III-nitride light-emitting device with increased light generating capability 有权
标题翻译：具有增加的发光能力的III族氮化物发光器件
公开(公告)号：US06486499B1
公开(公告)日：2002-11-26
申请号：US09469657
申请日：1999-12-22
申请人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
发明人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
IPC分类号： H01L2715
CPC分类号： H01L33/62 , G09G2360/148 , H01L25/167 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05572 , H01L2224/14 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
摘要翻译：本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。可以使用底座来提供LED管芯和封装之间的电连接和热连接。底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。最后，器件可以包括高折射率（n> 1.8）的覆盖层。

9. 发明授权

US06844571B2 III-nitride light-emitting device with increased light generating capability 有权
标题翻译：具有增加的发光能力的III族氮化物发光器件
公开(公告)号：US06844571B2
公开(公告)日：2005-01-18
申请号：US10071507
申请日：2002-02-07
申请人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
发明人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
IPC分类号： H01L27/15 , H01L33/02 , H01L33/38 , H01L33/40 , H01L33/62 , H01L33/64 , H01L31/12 , H01L33/00
CPC分类号： H01L33/62 , G09G2360/148 , H01L25/167 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05572 , H01L2224/14 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
摘要翻译：本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。可以使用底座来提供LED管芯和封装之间的电连接和热连接。底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。最后，器件可以包括高折射率（n> 1.8）的覆盖层。

10. 发明授权

US06570190B2 LED having angled sides for increased side light extraction 有权
标题翻译： LED具有成角度的侧面，用于增加侧光提取
公开(公告)号：US06570190B2
公开(公告)日：2003-05-27
申请号：US09732326
申请日：2000-12-06
申请人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
发明人： Michael R Krames , Fred A Kish, Jr. , Tun S Tan
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/02
摘要： The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.
摘要翻译：本发明是一种用于设计半导体发光器件的方法，使得侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以改善光提取提高总光输出效率。选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。

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