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1. 发明授权

US08980005B2 Liner assembly for chemical vapor deposition chamber 有权
标题翻译：用于化学气相沉积室的衬套组件
公开(公告)号：US08980005B2
公开(公告)日：2015-03-17
申请号：US13193570
申请日：2011-07-28
申请人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
发明人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
IPC分类号： C23C16/458 , C23C16/44 , C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译：本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

2. 发明授权

US09499905B2 Methods and apparatus for the deposition of materials on a substrate 有权
标题翻译：用于在基材上沉积材料的方法和装置
公开(公告)号：US09499905B2
公开(公告)日：2016-11-22
申请号：US13547487
申请日：2012-07-12
申请人： Mehmet Tugrul Samir , Nyi Oo Myo
发明人： Mehmet Tugrul Samir , Nyi Oo Myo
IPC分类号： C23C16/455
CPC分类号： C23C16/45504 , C23C16/45563 , C23C16/45565 , C23C16/45568 , C23C16/4557 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558
摘要： Methods and apparatus for deposition of materials on substrates are provided herein. In some embodiments, an apparatus may include a process chamber having a substrate support; a heating system to provide heat energy to the substrate support; a gas inlet port disposed to a first side of the substrate support to provide at least one of a first process gas or a second process gas across a processing surface of the substrate; a first gas distribution conduit disposed above the substrate support and having one or more first outlets disposed along the length of the first gas distribution conduit to provide a third process gas to the processing surface of the substrate, wherein the one or more first outlets are substantially linearly arranged; and an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber.
摘要翻译：本文提供了在基板上沉积材料的方法和装置。在一些实施例中，装置可以包括具有基板支撑件的处理室; 用于向衬底支撑件提供热能的加热系统; 气体入口，设置在所述衬底支撑件的第一侧上，以提供穿过所述衬底的处理表面的第一工艺气体或第二工艺气体中的至少一种; 第一气体分配导管，设置在所述衬底支撑件上方，并且具有沿着所述第一气体分配导管的长度设置的一个或多个第一出口，以向所述衬底的所述处理表面提供第三工艺气体，其中所述一个或多个第一出口基本上线性排列; 以及设置在与气体入口相对的衬底支撑件的第二侧上以排出来自处理室的处理气体的排气歧管。

3. 发明申请

US20120240853A1 LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：化学气相沉积室内衬组件
公开(公告)号：US20120240853A1
公开(公告)日：2012-09-27
申请号：US13193570
申请日：2011-07-28
申请人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
发明人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译：本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

4. 发明申请

US20140199785A1 MULTIZONE CONTROL OF LAMPS IN A CONICAL LAMPHEAD USING PYROMETERS 有权
标题翻译：使用PYROMETERS在多功能灯中进行多光泽控制
公开(公告)号：US20140199785A1
公开(公告)日：2014-07-17
申请号：US13796169
申请日：2013-03-12
申请人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
发明人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
IPC分类号： H01L21/67 , H01L21/66
CPC分类号： C30B25/105 , C23C16/4583 , C23C16/481 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/16 , G01J5/0007 , G01J5/10 , G01J2005/106 , H01L21/0262 , H01L21/67115 , H01L21/67248 , H01L22/10 , H01L22/20
摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
摘要翻译：描述了一种用于处理半导体衬底的方法和设备。该装置是具有光学透明的上部圆顶和下部圆顶的处理室。在处理过程中真空保持在处理室中。通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。散热灯靠近下穹顶定位，热传感器设置在灯之间。灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

5. 发明授权

US08772055B1 Multizone control of lamps in a conical lamphead using pyrometers 有权
标题翻译：使用高温计对锥形灯头中的灯进行多区域控制
公开(公告)号：US08772055B1
公开(公告)日：2014-07-08
申请号：US13796169
申请日：2013-03-12
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： H01L21/00 , B05C11/00 , H05B6/66
CPC分类号： C30B25/105 , C23C16/4583 , C23C16/481 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/16 , G01J5/0007 , G01J5/10 , G01J2005/106 , H01L21/0262 , H01L21/67115 , H01L21/67248 , H01L22/10 , H01L22/20
摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
摘要翻译：描述了一种用于处理半导体衬底的方法和设备。该装置是具有光学透明的上部圆顶和下部圆顶的处理室。在处理过程中真空保持在处理室中。通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。散热灯靠近下穹顶定位，热传感器设置在灯之间。灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

6. 发明授权

US09870919B2 Process chamber having separate process gas and purge gas regions 有权
公开(公告)号：US09870919B2
公开(公告)日：2018-01-16
申请号：US13864849
申请日：2013-04-17
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

7. 发明申请

US20130288460A1 PROCESS CHAMBER HAVING SEPARATE PROCESS GAS AND PURGE GAS REGIONS 有权
标题翻译：具有独立工艺气体和纯净气体区域的过程室
公开(公告)号：US20130288460A1
公开(公告)日：2013-10-31
申请号：US13864849
申请日：2013-04-17
申请人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
发明人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
IPC分类号： H01L21/02
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.
摘要翻译：本发明的实施例一般涉及在其中处理衬底的腔室和方法。这些室通常包括单独的工艺气体和吹扫气体区域。处理气体区域和吹扫气体区域各自具有相应的气体入口和气体出口。所述方法通常包括将衬底定位在腔室内的衬底支撑件上。衬底支架的平面限定了工艺气体区域和吹扫气体区域之间的边界。吹扫气体通过至少一个吹扫气体入口被引入净化气体区域中，并且使用至少一个净化气体出口从净化气体区域中除去。工艺气体通过至少一个工艺气体入口引入工艺气体区域，并通过至少一个工艺气体出口从工艺气体区域中移出。工艺气体被热分解以在衬底上沉积材料。

8. 发明申请

US20130284097A1 GAS DISTRIBUTION MODULE FOR INSERTION IN LATERAL FLOW CHAMBERS 审中-公开
标题翻译：气体分配模块，用于在侧向流动阀中插入
公开(公告)号：US20130284097A1
公开(公告)日：2013-10-31
申请号：US13785454
申请日：2013-03-05
申请人： Joseph M. Ranish , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Mehmet Tugrul Samir
IPC分类号： B05B3/00
CPC分类号： B05B3/00 , C23C16/45578 , C23C16/45589 , C23C16/481 , C23C16/52 , H01L21/67115
摘要： Embodiments of the invention generally relate to apparatus for and methods of depositing material on a substrate. The apparatus generally include a process chamber having a process gas region therein. Process gas is introduced into the process gas region through a process gas inlet. The chamber also includes lamps positioned outside the chamber to thermally decompose the process gas onto the substrate surface. The process chamber also includes at least one movable gas diffuser adapted to provide process gas to the surface of the substrate to effect a uniform deposition of material on the substrate surface. The methods generally include flowing a process gas parallel to a surface of a substrate, and thermally decomposing the process gas on the substrate. Additional process gas is provided through a movable gas diffuser to the surface of the substrate in a predetermined distribution to effect a uniform deposition on the substrate surface.
摘要翻译：本发明的实施例一般涉及用于在衬底上沉积材料的装置和方法。该装置通常包括其中具有工艺气体区域的处理室。工艺气体通过工艺气体入口引入工艺气体区域。该室还包括位于室外的灯，以将工艺气体热分解到衬底表面上。处理室还包括至少一个可移动的气体扩散器，其适用于向衬底的表面提供工艺气体，以使材料均匀地沉积在衬底表面上。所述方法通常包括使工艺气体平行于衬底的表面流动，并且热分解衬底上的工艺气体。通过可移动气体扩散器以预定的分布将额外的工艺气体提供到衬底的表面，以在衬底表面上实现均匀的沉积。

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