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1. 发明授权

US08217313B2 Heating apparatus and heating method 有权
标题翻译：加热装置及加热方式
公开(公告)号：US08217313B2
公开(公告)日：2012-07-10
申请号：US12022489
申请日：2008-01-30
申请人： Tetsuo Fukuoka , Takahiro Kitano , Kazuo Terada
发明人： Tetsuo Fukuoka , Takahiro Kitano , Kazuo Terada
IPC分类号： F27B5/14 , C23C16/00
CPC分类号： F27B17/0025 , G03F7/168 , H01L21/67109
摘要： A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.
摘要翻译：所公开的加热装置包括加热室，该加热室被配置为用与基板相对的加热板加热放置在加热室中的基板; 气流形成部分，其沿着所述加热室中的所述基板的顶表面产生气流; 以及分别位于加热室的内侧壁和与内侧壁相对的第一基板边缘之间以及位于加热室的另一内侧壁和与另一内侧壁相对的第二基板边缘之间的一对第一板构件。

2. 发明授权

US08080765B2 Apparatus and method for heating substrate and coating and developing system 有权
标题翻译：用于加热基材和涂层和显影系统的装置和方法
公开(公告)号：US08080765B2
公开(公告)日：2011-12-20
申请号：US12880784
申请日：2010-09-13
申请人： Shinichi Hayashi , Tetsuo Fukuoka , Tetsuya Oda , Hiroaki Inadomi
发明人： Shinichi Hayashi , Tetsuo Fukuoka , Tetsuya Oda , Hiroaki Inadomi
IPC分类号： F27B5/14 , C23C16/00
CPC分类号： F27B5/04 , F27B17/0025 , F27D3/0084 , H01L21/67109
摘要： A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.
摘要翻译：基板加热装置包括布置在热板上方的顶板，使得在热板和顶板之间形成垂直空间。顶板具有用作真空绝热层的真空内部室，其抑制从面对热板的顶板的第一表面到与第一表面相对的顶板的第二表面的热传递。当加热基板时，产生流过热板和顶板之间的空气的气流。

3. 发明授权

US07977609B2 Temperature measuring device using oscillating frequency signals 有权
标题翻译：使用振荡频率信号的温度测量装置
公开(公告)号：US07977609B2
公开(公告)日：2011-07-12
申请号：US11642827
申请日：2006-12-21
申请人： Nobuyuki Sata , Takahiro Kitano , Tetsuo Fukuoka , Toshiyuki Matsumoto , Tomohide Minami
发明人： Nobuyuki Sata , Takahiro Kitano , Tetsuo Fukuoka , Toshiyuki Matsumoto , Tomohide Minami
IPC分类号： H05B1/02
CPC分类号： H05B1/0233 , H01L21/67248
摘要： This invention provides a wafer-type temperature sensor capable of eliminating the need for an A/D converter, adapting itself to automation and improving the heat resistance to measure temperature distribution of the upper surface of a wafer, a temperature measuring device using the sensor, a thermal processor having a temperature measurement function and a temperature measurement method. The wafer-type temperature sensor comprises a wafer and a plurality of temperature sensors arranged in regions which are formed by segmenting the upper surface of the wafer into a plurality of regions. Each of the temperature sensors includes an oscillation circuit for oscillating a frequency signal corresponding to the temperature of its own region within a frequency band that is different for every region in response to input of power supply voltage.
摘要翻译：本发明提供一种晶片式温度传感器，其能够消除对A / D转换器的需要，适应自动化和提高耐热性，以测量晶片上表面的温度分布，使用该传感器的温度测量装置，具有温度测量功能和温度测量方法的热处理器。晶片型温度传感器包括晶片和多个温度传感器，其布置在通过将晶片的上表面分割成多个区域而形成的区域中。每个温度传感器包括振荡电路，用于响应于电源电压的输入，在与每个区域不同的频带内振荡对应于其自身区域的温度的频率信号。

4. 发明授权

US07797855B2 Heating apparatus, and coating and developing apparatus 有权
标题翻译：加热装置和涂装显影装置
公开(公告)号：US07797855B2
公开(公告)日：2010-09-21
申请号：US11505810
申请日：2006-08-18
申请人： Tetsuo Fukuoka , Masami Akimoto , Takahiro Kitano , Yoshio Kimura , Shinichi Hayashi , Hikaru Ito
发明人： Tetsuo Fukuoka , Masami Akimoto , Takahiro Kitano , Yoshio Kimura , Shinichi Hayashi , Hikaru Ito
IPC分类号： F26B21/06
CPC分类号： C30B33/02 , C30B35/00 , H01L21/67098 , H01L21/67748
摘要： A heating apparatus 2 comprises a housing 20; a flat heating chamber 4 which is provided in the housing 2 and adapted to heat a wafer W used as a substrate, with one side of the heating chamber 4 opening for carrying in and carrying out the wafer; and a heating plates 44, 45 provided in the heating chamber 4 such that the wafer W can be heated from both above and below. A cooling plate 3 is provided in the housing 20 located in the vicinity of the opening of the heating chamber 4, for cooling the wafer W after being heated by the heating plates 44, 45. Additionally, a carrying means is provided in the housing 20 for carrying the wafer W between an upper position of the cooling plate 3 and the interior of the heating chamber 4 such that a heat treatment for the wafer W can be performed with the wafer W being held in the heating chamber 4.
摘要翻译：加热装置2包括壳体20; 平面加热室4，其设置在壳体2中并且适于加热用作基板的晶片W，加热室4的一侧开口用于承载和执行晶片; 以及设置在加热室4中的加热板44,45，使得晶片W能够从上下两者加热。冷却板3设置在位于加热室4的开口附近的壳体20中，用于在被加热板44,45加热之后冷却晶片W.此外，在壳体20中设置有承载装置用于在冷却板3的上部位置和加热室4的内部之间承载晶片W，使得可以在将晶片W保持在加热室4中的情况下进行晶片W的热处理。

5. 发明授权

US06744020B2 Heat processing apparatus 失效
标题翻译：热处理设备
公开(公告)号：US06744020B2
公开(公告)日：2004-06-01
申请号：US10028789
申请日：2001-12-28
申请人： Eiichi Shirakawa , Tetsuo Fukuoka , Tsuyoshi Nogami
发明人： Eiichi Shirakawa , Tetsuo Fukuoka , Tsuyoshi Nogami
IPC分类号： H05B102
CPC分类号： F28D15/02 , F27D2019/0037 , F28D15/06 , H01L21/67103 , H01L21/67109 , H01L21/67248
摘要： A heat processing apparatus comprises a hot plate for putting the substrate on or near its surface, a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface, a member surrounding a space between the hot plate and the ceiling, a gas flow generator supplying gas to the a region from a circumference of the hot plate to a center of the ceiling, and a temperature control mechanism for controlling a regional temperature of the first region in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate, thus heating a substrate to a uniform temperature all over its surface.
摘要翻译：热处理装置包括用于将基板放置在其表面上或其表面附近的热板，具有第一和第二同心区域的顶板，分别具有与热板表面相对的第一和第二热管，围绕位于热板表面之间的空间的构件，热板和天花板，气体发生器，其从所述热板的圆周到所述顶板的中心向所述区域供应气体;以及温度控制机构，用于以这样的方式控制所述第一区域的区域温度：从衬底的中心散热比从衬底的圆周更大，从而将衬底加热至整个表面均匀的温度。

6. 发明授权

US08304020B2 Adhesion promoting process, adhesion promoting device, coating and developing system and storage medium 有权
标题翻译：粘合促进过程，粘附促进装置，涂层和显影系统和储存介质
公开(公告)号：US08304020B2
公开(公告)日：2012-11-06
申请号：US12364729
申请日：2009-02-03
申请人： Tetsuo Fukuoka , Takahiro Kitano
发明人： Tetsuo Fukuoka , Takahiro Kitano
IPC分类号： C23C16/00 , B05D5/10 , B05D3/00
CPC分类号： G03B27/52 , C09J5/02
摘要： There are provided an adhesion promoting process using a comparatively small amount of an adhesion promoting gas for processing a workpiece, an adhesion promoting device for carrying out the adhesion promoting process, a coating and developing system including the adhesion promoting device, and a storage medium storing a program specifying a set of instructions for carrying out the adhesion promoting process.The adhesion promoting process includes the steps of: placing a workpiece on a support table disposed in a processing space defined by a processing vessel; adjusting the temperature of the workpiece placed on the support table to a first temperature at which an adhesion promoting gas does not condense on the workpiece in dew drops; supplying the adhesion promoting gas to the temperature-controlled workpiece to make a surface of the workpiece hydrophobic through the interaction of molecules contained in the adhesion promoting gas and the surface of the workpiece; and adjusting the temperature of the workpiece to a second temperature higher than the first temperature to supply thermal energy to excessive molecules remaining on the surface of the workpiece and evacuating the processing space to remove the excessive molecules from the surface of the workpiece.
摘要翻译：提供了使用相对少量用于加工工件的粘附促进气体的粘合促进方法，用于进行粘合促进过程的粘合促进装置，包括粘附促进装置的涂覆和显影系统以及存储指定用于执行粘附促进过程的一组指令的程序。粘合促进方法包括以下步骤：将工件放置在设置在由处理容器限定的处理空间中的支撑台上; 将放置在支撑台上的工件的温度调节到粘附促进气体在露滴中不会在工件上冷凝的第一温度; 将粘合促进气体供应到温度控制的工件，以通过包含在粘附促进气体中的分子与工件的表面的相互作用使工件的表面疏水化; 并且将工件的温度调节到高于第一温度的第二温度，以将热能提供给留在工件表面上的过量分子，并抽空处理空间以从工件的表面去除过量的分子。

7. 发明授权

US08025925B2 Heating apparatus, coating and development apparatus, and heating method 有权
标题翻译：加热装置，涂装开发装置和加热方法
公开(公告)号：US08025925B2
公开(公告)日：2011-09-27
申请号：US11378319
申请日：2006-03-20
申请人： Tetsuo Fukuoka , Takahiro Kitano , Nobuaki Matsuoka
发明人： Tetsuo Fukuoka , Takahiro Kitano , Nobuaki Matsuoka
IPC分类号： B05D3/02 , H05B3/68 , C23C16/00
CPC分类号： F27B5/04 , F27D3/0084 , H01L21/67109
摘要： A heating apparatus is configured to include a hot plate at which a substrate is placed, a top plate opposed to the substrate, a gas discharging part provided on one end side of the hot plate for discharging gas between the hot plate and the top plate, an exhaust part provided to be opposed to the gas discharging part with the hot plate interposed therebetween, and a heating part independently heating a first region and a second region of the substrate. A heating process is performed with good within-wafer uniformity by forming an unidirectional flow to heat the first region and the second region at different temperatures.
摘要翻译：加热装置构成为包括放置基板的加热板，与基板相对的顶板，设置在热板的一端侧的气体排出部，用于在加热板和顶板之间排出气体，排气部，设置成与所述气体排出部相对设置，其间插入有所述热板;加热部，独立地加热所述基板的第一区域和第二区域。通过形成单向流以在不同温度下加热第一区域和第二区域，进行具有良好的晶片内均匀性的加热过程。

8. 发明申请

US20080185370A1 HEATING APPARATUS AND HEATING METHOD 有权
标题翻译：加热装置和加热方法
公开(公告)号：US20080185370A1
公开(公告)日：2008-08-07
申请号：US12022489
申请日：2008-01-30
申请人： Tetsuo Fukuoka , Takahiro Kitano , Kazuo Terada
发明人： Tetsuo Fukuoka , Takahiro Kitano , Kazuo Terada
IPC分类号： G03F7/40 , F27D23/00
CPC分类号： F27B17/0025 , G03F7/168 , H01L21/67109
摘要： A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.
摘要翻译：所公开的加热装置包括加热室，该加热室被配置为用与基板相对的加热板加热放置在加热室中的基板; 气流形成部分，其沿着所述加热室中的所述基板的顶表面产生气流; 以及分别位于加热室的内侧壁和与内侧壁相对的第一基板边缘之间以及位于加热室的另一内侧壁和与另一内侧壁相对的第二基板边缘之间的一对第一板构件。

9. 发明申请

US20080011737A1 Hot plate and process for producing the same 审中-公开
标题翻译：热板及其制造方法
公开(公告)号：US20080011737A1
公开(公告)日：2008-01-17
申请号：US11757641
申请日：2007-06-04
申请人： Tetsuo Fukuoka , Takahiro Kitano
发明人： Tetsuo Fukuoka , Takahiro Kitano
IPC分类号： H05B3/68
CPC分类号： H05B3/143 , H01L21/67103 , Y10T29/49083
摘要： A hot plate for heating a substrate placed on the hot plate. The hot plate comprises a silicon base having pin insertion holes through which support pins for supporting a substrate from below and elevating the substrate above the hot plate pass; a heater composed of a resistor made of a metal film deposited on the back surface of the silicon base; and a temperature sensor, composed of a resistor made of a metal film deposited on the back or front surface of the silicon base. The front surface of the silicon base has gap-making protrusions for making a gap between the hot plate and a substrate placed on the gap-making protrusions.
摘要翻译：用于加热放置在热板上的基板的热板。热板包括具有销插入孔的硅基座，用于从下方支撑基板的支撑销通过所述支撑销并将基板提升到热板通道上方; 由沉积在硅基底的背面上的由金属膜构成的电阻器构成的加热器; 以及由沉积在硅基材的背面或前表面上的由金属膜构成的电阻器构成的温度传感器。硅基座的前表面具有用于在加热板和设置在间隙形成突起之间的基板之间形成间隙的间隙形成突起。

10. 发明授权

US08933376B2 Heating device, coating and developing system, heating method and storage medium 有权
标题翻译：加热装置，涂层和显影系统，加热方法和储存介质
公开(公告)号：US08933376B2
公开(公告)日：2015-01-13
申请号：US12015191
申请日：2008-01-16
申请人： Tetsuo Fukuoka , Takahiro Kitano , Kazuo Terada
发明人： Tetsuo Fukuoka , Takahiro Kitano , Kazuo Terada
IPC分类号： A21B1/00 , F27B17/00 , H01L21/67
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . Temperature distribution creating means (heating lamps 2) creates a preheating temperature distribution in the substrate supported on a cooling plate 4 at a waiting position before the substrate is carried into the heating chamber 3 so as to level out the initial temperature distribution.
摘要翻译：加热装置具有加热室3.当基板被携带到加热室3中时，在基板（晶片W）的表面中产生初始温度分布。。。温度分布生成装置（加热灯2）在将基板搬入加热室3之前的待机位置，在支撑在冷却板4上的基板中产生预热温度分布，以平衡初始温度分布。

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