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    • 3. 发明申请
    • HEATING DEVICE, HEATING METHOD AND STORAGE MEDIUM
    • 加热装置,加热方法和储存介质
    • US20080182217A1
    • 2008-07-31
    • US12020898
    • 2008-01-28
    • Tetsuo FukuokaTakahiro KitanoKazuo Terada
    • Tetsuo FukuokaTakahiro KitanoKazuo Terada
    • F27D15/02F27D3/00
    • F27B17/0025H01L21/67109H01L21/67248
    • A heating device 1 includes a flat heating chamber 3 provided with a side opening. A substrate W is carried in a horizontal position through the side opening into the processing chamber 3, and is subjected to a heating process in the heating chamber 3. the heating chamber 3 is provided with heating plates 34 and 35 respectively provided with heating elements 34a and 35a, and a cooling mechanism 2 for cooling the heating plates 34 and 35. A controller 7 controls the cooling mechanism such that the heating plates 34 and 35 are cooled after the completion of the heating process for heating the substrate W and before a succeeding substrate W is carried into the heating chamber 3, and controls the heating elements 34a and 35a such that the heating plates 34 and 35 are heated at a processing temperature after the succeeding substrate has been carried into the heating chamber 3.
    • 加热装置1包括具有侧开口的平坦加热室3。 基板W通过侧开口在水平位置被运送到处理室3中,并且在加热室3中进行加热处理。 加热室3设置有分别设有加热元件31a和35a的加热板34和35,以及用于冷却加热板34和35的冷却机构2。 控制器7控制冷却机构,使得加热板34和35在完成用于加热基板W的加热过程之后并且在将下一个基板W运送到加热室3之前被冷却,并且控制加热元件34a 和35a,使得加热板34和35在后续基板被运送到加热室3之后的加工温度下被加热。
    • 4. 发明授权
    • Semiconductor memory and method of fabricating the same
    • 半导体存储器及其制造方法
    • US5760452A
    • 1998-06-02
    • US732832
    • 1996-10-15
    • Kazuo Terada
    • Kazuo Terada
    • H01L27/108H01L29/105H01L29/94H01L31/062H01L31/113
    • H01L27/10808H01L27/10805
    • Disclosed are an improved semiconductor memory cell suitable for high integration and a novel method of fabricating the same. The memory cell has a large capacitance and a small area. The memory cell also has a plurality of bit-lines buried in an isolation region in a semiconductor substrate. The bit-line has a very small width and thickness thereby reducing a parasitic capacity between the bit-line and the semiconductor substrate. The memory cell may further be provided with a noise shielding line. Further, disclosed is a novel memory cell array of a semiconductor memory. The buried bit-line is coupled with a bit-line connecting sub-arrays and both are separated by a insulation film. A plurality of pairs of the bit-lines are arranged in rows. A word-line is coupled with a sub-word line and both are separated by a insulation film. A plurality of pairs of the word-lines are arranged in columns. The memory cells are arranged at the intersections of the buried bit-lines and the word-lines. The memory cells are also alternatively arranged on the adjacent buried bit-lines so that the number of the memory cells arranged on one of the buried bit-lines are reduced.
    • 公开了一种适用于高集成度的改进的半导体存储器单元及其制造方法。 存储单元具有大的电容和小的面积。 存储单元还具有埋在半导体衬底中的隔离区域中的多个位线。 位线具有非常小的宽度和厚度,从而减小位线和半导体衬底之间的寄生电容。 存储单元还可以设置有噪声屏蔽线。 此外,公开了一种半导体存储器的新型存储单元阵列。 掩埋位线与位线连接子阵列耦合,并且两者都被绝缘膜隔开。 多对位线排列成行。 字线与子字线耦合,并且两者都被绝缘膜隔开。 多个字线对被排列成列。 存储单元布置在掩埋位线和字线的交点处。 存储单元也交替地布置在相邻的掩埋位线上,使得布置在一个掩埋位线上的存储单元的数量减少。
    • 5. 发明授权
    • Treatment object supporting device
    • 治疗对象支持装置
    • US5334257A
    • 1994-08-02
    • US66416
    • 1993-05-25
    • Hironobu NishiKazuo Terada
    • Hironobu NishiKazuo Terada
    • H01L21/22H01L21/673H01L21/677B05C13/02
    • H01L21/67781Y10S269/903Y10S414/137Y10S414/138
    • A plurality of ring trays supporting loaded treatment objects are arranged in parallel at predetermined spacing in the vertical axis direction and are supported by rods at a minimum of three locations separated from the rod couplings. Cutouts are provided in each ring tray that do not extend to the ring tray center open area. Supporting teeth are provided on the arms driven by drive devices and are inserted via the cutouts. The supporting teeth straddle the ring tray and are shifted relatively on both sides of the vertical direction, and can exchange the wafers between the ring tray and the supporting teeth. By this, problems occurring with regard to various types of heat treatment of the treatment objects, such as treatment object slippage, can be prevented. In addition, a plurality of treatment objects can be exchanged at one time, thereby allowing the exchanging time to be shortened.
    • 支撑负载的处理对象的多个环形托盘在垂直轴线方向上以预定的间隔平行布置,并且在与杆联接件分开的至少三个位置处被杆支撑。 每个环形托盘上都设有不延伸到环形托盘中心开放区域的切口。 支撑齿设置在由驱动装置驱动的臂上,并经由切口插入。 支撑齿跨越环形托盘并相对于垂直方向的两侧相对移动,并且可以在环形托盘和支撑齿之间交换晶片。 由此,可以防止对处理对象的各种热处理(例如处理对象滑动)产生的问题。 此外,可以一次交换多个处理对象,从而可以缩短交换时间。
    • 7. 发明授权
    • Process for producing ferrite powder for ferrite magnets
    • 铁氧体磁铁用铁氧体粉末的制造方法
    • US5053156A
    • 1991-10-01
    • US618937
    • 1990-11-28
    • Kunio OkumoriKazuo Terada
    • Kunio OkumoriKazuo Terada
    • C01G49/00C04B35/26H01F1/34
    • C04B35/2683
    • A process for producing ferrite powder for high performance ferrite magnets is claimed, which comprises: milling magnetite or mill scale into a powder comprising particles of specified particle size; oxidizing the milled product to obtain a powder containing 98.0% or higher Fe.sub.2 O.sub.3 ; further adding thereto iron oxide originated from iron chloride or iron sulfide together with an oxide or a carbonate of Sr or Ba; and calcining the resulting powder mixture.The present invention provides a low-cost process for producing ferrite powder for ferrite magnets having high pellet strength as well as high magnetic properties, from which a high performance Sr-ferrite magnet as well as Ba-ferrite magnet suitable for use in automobile motors can be readily produced by simply molding the powder under a magnetic field and sintering.
    • 一种用于生产用于高性能铁氧体磁体的铁氧体粉末的方法,其特征在于,它包括:将磁铁矿或磨料粉碎成包含特定粒度的颗粒的粉末; 氧化研磨产物得到含有98.0%或更高的Fe 2 O 3的粉末; 进一步添加源自氯化铁或硫化铁的氧化铁与Sr或Ba的氧化物或碳酸盐; 并煅烧所得的粉末混合物。 本发明提供了一种用于制造铁氧体磁铁铁氧​​体粉末的低成本方法,其具有高的颗粒强度以及高的磁性能,其中适用于汽车电动机的高性能Sr-铁氧体磁体以及Ba-铁氧体磁体可由该方法 通过在磁场下简单地成型粉末并烧结容易地制造。
    • 8. 发明授权
    • Substrate treatment apparatus
    • 基板处理装置
    • US08006636B2
    • 2011-08-30
    • US12177243
    • 2008-07-22
    • Kazuo TeradaKazuo SakamotoTakeshi Uehara
    • Kazuo TeradaKazuo SakamotoTakeshi Uehara
    • B05C11/02B05B15/04
    • H01L21/6715H01L21/67178H01L21/68785
    • A substrate treatment apparatus of the present invention includes: a holding means for rotatably holding a substrate to be treated; a coating solution supply nozzle for supplying a coating solution onto the front surface of the substrate to be treated held on the holding means; a treatment container with an upper surface open for housing them; an exhaust means for exhausting an atmosphere in the treatment container from the bottom; a multiblade centrifugal fan provided on the inner periphery of the treatment container for flowing airflow on a front surface side of the substrate to the exhaust means; and a controller for controlling the number of rotations of the multiblade centrifugal fan corresponding to the number of rotations of the substrate, wherein the number of rotations of the multiblade centrifugal fan is controlled so that turbulent airflow flowing in a circumferential direction on the front surface of the substrate generated due to the rotation of the substrate is corrected to laminar airflow flowing in a radial direction.
    • 本发明的基板处理装置包括:用于可旋转地保持待处理基板的保持装置; 涂布溶液供给喷嘴,用于将涂布溶液供给到保持在保持装置上的被处理基板的前表面上; 处理容器,其上表面打开以容纳它们; 用于从底部排出处理容器中的气氛的排气装置; 设置在处理容器的内周上的多叶离心风扇,用于将衬底的前表面侧的气流流向排气装置; 以及控制器,用于控制与所述基板的旋转数相对应的所述多叶离心风扇的转数,其中所述多叶离心风扇的转数受到控制,使得在圆周方向上流动的湍流气流在 由于基板的旋转而产生的基板被校正成沿径向流动的层流。