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    • 9. 发明授权
    • Spin-valve magnetoresistance sensor and thin film magnetic head
    • 旋转阀磁阻传感器和薄膜磁头
    • US06340533B1
    • 2002-01-22
    • US09443953
    • 1999-11-19
    • Masaki UenoHideyasu NagaiTatsuo SawasakiFuminori Hikami
    • Masaki UenoHideyasu NagaiTatsuo SawasakiFuminori Hikami
    • B32B1500
    • B82Y25/00B32B15/04C22C45/04G11B5/3929G11B2005/3996H01F10/3268Y10T428/12465Y10T428/12576Y10T428/12937
    • A synthetic-type spin-valve MR sensor having a pinned magnetic layer with a multi-layer film structure. In one embodiment, on a substrate are formed by layering a free magnetic layer, a pinned magnetic layer including first and second ferromagnetic films, which are mutually coupled antiferromagnetically and which enclose a nonmagnetic coupling film. A nonmagnetic conductive layer is enclosed between these two magnetic layers. An antiferromagnetic layer neighbors the pinned magnetic layer. The first ferromagnetic film neighboring the antiferromagnetic layer is formed from a high-resistivity Co-base material. By making the products of the saturation magnetization and the film thickness of the first ferromagnetic layer and the second ferromagnetic layer substantially equal, the apparent magnetic moment of the pinned magnetic layer as a whole is zero, and the magnetostatic action on the free magnetic layer is eliminated or reduced. Shunting of the sense current to the first ferromagnetic film is suppressed, and a high rate of magnetoresistive change is obtained.
    • 一种具有多层膜结构的钉扎磁性层的合成型自旋阀MR传感器。 在一个实施例中,在衬底上通过层叠自由磁性层,包括第一和第二铁磁膜的钉扎磁性层,其被反铁磁相互耦合并且包围非磁性耦合膜。 在这两个磁性层之间封装有非磁性导电层。 反铁磁层与被钉扎的磁性层相邻。 与反铁磁层相邻的第一铁磁膜由高电阻率Co基材料形成。 通过使第一铁磁层和第二铁磁层的饱和磁化强度和膜厚度的乘积基本相等,固定磁性层整体的表观磁矩为零,自由磁性层的静磁力为 消除或减少 抑制了对第一铁磁膜的感测电流的分流,并且获得了高的磁阻变化率。