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1. 发明申请

US20060024979A1 Fabrication method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060024979A1
公开(公告)日：2006-02-02
申请号：US11169604
申请日：2005-06-29
申请人： Kiyotaka Tabuchi
发明人： Kiyotaka Tabuchi
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/515 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02362 , H01L21/31612 , H01L21/31633
摘要： A fabrication method of a semiconductor device is disclosed by which damage to another film or exfoliation of a film is prevented and an insulating film having a dielectric constant of 2.5 or less can be formed while a film strength is maintained without deteriorating a wiring line characteristic. According to an embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas having a ring structure of Si—O bonds, such that it maintains the ring structure of the Si—O bonds. According to another embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas which contains silane-containing gas and oxygen gas or film-forming gas which contains Si—O bond-containing gas, such that it has a ring structure of the Si—O bonds.
摘要翻译：公开了半导体器件的制造方法，其中可以防止对另一个膜的损伤或膜的剥离，并且可以在保持膜强度而不劣化布线特性的同时形成介电常数为2.5以下的绝缘膜。根据一个实施方案，通过等离子体工艺在衬底上形成绝缘膜，其使用具有Si-O键环结构的成膜气体，以保持Si-O键的环结构。根据另一个实施例，通过等离子体工艺在基板上形成绝缘膜，该等离子体处理使用含有含硅烷的气体和氧气的成膜气体或含有含Si-O键的气体的成膜气体，使得它具有Si-O键的环结构。

2. 发明授权

US09159760B2 Solid-state imaging device with layered microlenses and method for manufacturing same 有权
标题翻译：具有分层微透镜的固态成像装置及其制造方法
公开(公告)号：US09159760B2
公开(公告)日：2015-10-13
申请号：US13613261
申请日：2012-09-13
申请人： Yoichi Ootsuka , Tomoyuki Yamashita , Kiyotaka Tabuchi , Yoshinori Toumiya , Akiko Ogino
发明人： Yoichi Ootsuka , Tomoyuki Yamashita , Kiyotaka Tabuchi , Yoshinori Toumiya , Akiko Ogino
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/14627 , H01L27/14612 , H01L27/14621 , H01L27/14685 , H04N5/335
摘要： A solid-state imaging device with microlenses having a first lens layer and a second lens layer, the second lens layer being formed at least at a periphery of each microlens with either a portion of the second lens layer present at a central portion of each of the microlenses being thinner than a portion of the second lens layer present at the periphery of the microlens or no portion of the second lens layer being present at the central portion of each of the first microlenses. Between first pixel portions there is an interpixel gap, and the solid-state imaging device includes light blocking layers in alignment with the gaps.
摘要翻译：一种具有微透镜的固态成像装置，具有第一透镜层和第二透镜层，所述第二透镜层至少在每个微透镜的周边形成，其中所述第二透镜层的一部分存在于每个微透镜的中心部分所述微透镜比存在于所述微透镜周边的所述第二透镜层的部分薄，或者所述第二透镜层的部分不存在于所述第一微透镜的每一个的中心部分。在第一像素部分之间存在像素间隙，并且固态成像装置包括与间隙对准的遮光层。

3. 发明授权

US09087761B2 Solid-state imaging device including an on-chip lens with two inorganic films thereon 有权
标题翻译：固态成像装置，包括其上具有两个无机膜的片上透镜
公开(公告)号：US09087761B2
公开(公告)日：2015-07-21
申请号：US13248491
申请日：2011-09-29
申请人： Yoichi Otsuka , Akiko Ogino , Kiyotaka Tabuchi , Takamasa Tanikuni
发明人： Yoichi Otsuka , Akiko Ogino , Kiyotaka Tabuchi , Takamasa Tanikuni
IPC分类号： H01L31/0232 , H01L27/146 , H01L27/148 , H04N9/04
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14818 , H01L27/14843 , H04N9/045
摘要： A solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film.
摘要翻译：一种固体摄像器件，包括：形成在半导体衬底上的多个像素，包括光电转换单元; 像素上的滤色器; 在滤色器上由对应于每个像素的有机膜制成的片上微透镜; 形成在片上微透镜的表面上并且具有比片上微透镜更高的折射率的第一无机膜; 以及形成在第一无机膜的表面上并且具有比片上微透镜和第一无机膜更低的折射率的第二无机膜，其中至少第二无机膜包括在第一无机膜的界面处的非透镜区域相邻的第二无机膜。

4. 发明授权

US08268713B2 Method of manufacturing nonvolatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US08268713B2
公开(公告)日：2012-09-18
申请号：US12869904
申请日：2010-08-27
申请人： Hajime Yamagishi , Mitsuharu Shoji , Kiyotaka Tabuchi
发明人： Hajime Yamagishi , Mitsuharu Shoji , Kiyotaka Tabuchi
IPC分类号： H01L21/44
CPC分类号： H01L27/228 , H01L27/2436 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A method of manufacturing a nonvolatile memory device having a laminated structure in which a first magnetic material layer, a tunnel insulator film, and a second magnetic material layer are sequentially laminated, in which information is stored when an electric resistance value changes depending on a magnetization reversal state is disclosed. The method includes the steps of: sequentially forming the first magnetic material layer, the tunnel insulator film, and the second magnetic material layer; forming a mask layer on the second magnetic material layer; oxidizing a part uncovered by the mask layer of the second magnetic material layer; and reducing the oxidized part of the second magnetic material layer.
摘要翻译：一种制造具有层叠结构的非易失性存储装置的方法，其中依次层叠有第一磁性材料层，隧道绝缘体膜和第二磁性材料层，当电阻值根据磁化强度而变化时，存储信息公开了反转状态。该方法包括以下步骤：顺序地形成第一磁性材料层，隧道绝缘膜和第二磁性材料层; 在第二磁性材料层上形成掩模层; 氧化由第二磁性材料层的掩模层未覆盖的部分; 并且还原第二磁性材料层的氧化部分。

5. 发明申请

US20120086093A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，制造固态成像装置的方法和电子装置
公开(公告)号：US20120086093A1
公开(公告)日：2012-04-12
申请号：US13248491
申请日：2011-09-29
申请人： Yoichi Otsuka , Akiko Ogino , Kiyotaka Tabuchi , Takamasa Tanikuni
发明人： Yoichi Otsuka , Akiko Ogino , Kiyotaka Tabuchi , Takamasa Tanikuni
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14818 , H01L27/14843 , H04N9/045
摘要： A solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film.
摘要翻译：一种固体摄像器件，包括：形成在半导体衬底上的多个像素，包括光电转换单元; 像素上的滤色器; 在滤色器上由对应于每个像素的有机膜制成的片上微透镜; 形成在片上微透镜的表面上并且具有比片上微透镜更高的折射率的第一无机膜; 以及形成在第一无机膜的表面上并且具有比片上微透镜和第一无机膜更低的折射率的第二无机膜，其中至少第二无机膜包括在第一无机膜的界面处的非透镜区域相邻的第二无机膜。

6. 发明申请

US20110024857A1 SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME 失效
标题翻译：固态摄像元件及其制造方法及使用其的电子设备
公开(公告)号：US20110024857A1
公开(公告)日：2011-02-03
申请号：US12788503
申请日：2010-05-27
申请人： Yoshinori Toumiya , Kiyotaka Tabuchi , Yasuyuki Shiga , Iwao Sugiura , Naoyuki Miyashita , Masanori Iwasaki , Katsunori Kokubun , Tomohiro Yamazaki
发明人： Yoshinori Toumiya , Kiyotaka Tabuchi , Yasuyuki Shiga , Iwao Sugiura , Naoyuki Miyashita , Masanori Iwasaki , Katsunori Kokubun , Tomohiro Yamazaki
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L21/02263 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L31/02327
摘要： Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.
摘要翻译：本文公开了一种固态摄像元件，包括：半导体衬底; 形成在半导体衬底上并且其中布置有多个具有光电转换部分的像素的像素部分; 形成在所述半导体基板上以覆盖所述光电转换部的绝缘层; 形成在所述绝缘层中并且在所述光电转换部分上方的孔部; 形成为覆盖所述孔部的底面和侧面的氮化硅层; 以及形成在氮化硅层上的掩埋层，其中形成氮化硅层以便容纳通过利用原子层沉积法形成的氮化硅。

7. 发明申请

US20090303359A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE 失效
标题翻译：固态成像装置及其制造方法及电子装置
公开(公告)号：US20090303359A1
公开(公告)日：2009-12-10
申请号：US12434340
申请日：2009-05-01
申请人： Yoichi OTSUKA , Yoshiyuki ENOMOTO , Kazunori NAGAHATA , Tadayuki KIMURA , Toshihiko HAYASHI , Kenichi AOYAGI , Kiyotaka TABUCHI , Iwao SUGIURA , Kensaku MAEDA
发明人： Yoichi OTSUKA , Yoshiyuki ENOMOTO , Kazunori NAGAHATA , Tadayuki KIMURA , Toshihiko HAYASHI , Kenichi AOYAGI , Kiyotaka TABUCHI , Iwao SUGIURA , Kensaku MAEDA
IPC分类号： H04N5/335 , H01L21/306
CPC分类号： H01L27/14625 , G02B5/201 , G02B5/223 , H01L27/14621 , H01L27/14685
摘要： A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).
摘要翻译：固态成像装置具有：配置有各自具有光电转换元件的多个像素的成像区域和滤色器。滤色器包括：第一颜色（2G）的滤色镜部件，通过自对准形成的并且由第一颜色（2G）的滤光片部件包围的第二颜色（2R）的滤色镜部件，以及第三颜色（2B）通过自对准形成，并且每个由第一颜色（2G）的滤光器部件包围。

8. 发明授权

US07579286B2 Method of fabricating a semiconductor device using plasma to form an insulating film 失效
标题翻译：使用等离子体制造半导体器件以形成绝缘膜的方法
公开(公告)号：US07579286B2
公开(公告)日：2009-08-25
申请号：US11169604
申请日：2005-06-29
申请人： Kiyotaka Tabuchi
发明人： Kiyotaka Tabuchi
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/515 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02362 , H01L21/31612 , H01L21/31633
摘要： A fabrication method of a semiconductor device is disclosed by which damage to another film or exfoliation of a film is prevented and an insulating film having a dielectric constant of 2.5 or less can be formed while a film strength is maintained without deteriorating a wiring line characteristic. According to an embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas having a ring structure of Si—O bonds, such that it maintains the ring structure of the Si—O bonds. According to another embodiment, an insulating film is formed on a substrate by a plasma process, which uses film-forming gas which contains silane-containing gas and oxygen gas or film-forming gas which contains Si—O bond-containing gas, such that it has a ring structure of the Si—O bonds.
摘要翻译：公开了半导体器件的制造方法，其中可以防止对另一个膜的损伤或膜的剥离，并且可以在保持膜强度而不劣化布线特性的同时形成介电常数为2.5以下的绝缘膜。根据一个实施方案，通过等离子体工艺在衬底上形成绝缘膜，其使用具有Si-O键环结构的成膜气体，以保持Si-O键的环结构。根据另一个实施例，通过等离子体工艺在基板上形成绝缘膜，该等离子体处理使用含有含硅烷的气体和氧气的成膜气体或含有含Si-O键的气体的成膜气体，使得它具有Si-O键的环结构。

9. 发明申请

US20090189235A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20090189235A1
公开(公告)日：2009-07-30
申请号：US12339941
申请日：2008-12-19
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L31/10 , H01L31/18 , H01L31/0232
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译：具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。在光接收部的受光面侧形成有空穴积聚层。形成有外围电路的外围电路部分设置在光接收部分的一侧。绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离接收部分电影有负固定费用。

10. 发明申请

US20070048995A1 METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICES 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20070048995A1
公开(公告)日：2007-03-01
申请号：US11465502
申请日：2006-08-18
申请人： Koji Kawanami , Kiyotaka Tabuchi
发明人： Koji Kawanami , Kiyotaka Tabuchi
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/02074 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A method for production of semiconductor devices which includes the steps of forming, on an interlayer insulating film formed on a substrate, a copper-containing conductive layer in such a way that its surface is exposed, performing heat treatment with a reducing gas composed mainly of hydrogen on the surface of the conductive layer, performing plasma treatment with a reducing gas on the surface of the conductive layer, thereby permitting the surface of the conductive layer to be reduced and the hydrogen adsorbed by the heat treatment to be released, and forming an oxidation resistance film that covers the surface of the conductive layer such that the surface of the conductive layer is not exposed to an oxygen-containing atmospheric gas after the plasma treatment.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在基板上形成的层间绝缘膜上形成含铜导电层，使其表面露出，用主要由在导电层的表面上形成氢气，在导电层的表面进行还原性气体的等离子体处理，由此可以使导电层的表面降低，通过热处理吸附的氢被释放，形成覆盖导电层的表面的氧化电阻膜，使得导电层的表面在等离子体处理后不暴露于含氧气氛气体。

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