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1. 发明授权

US08067250B2 Ferroelectric memory device and method of manufacturing the same 有权
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US08067250B2
公开(公告)日：2011-11-29
申请号：US12069799
申请日：2008-02-13
申请人： Hiroaki Tamura , Teruo Tagawa
发明人： Hiroaki Tamura , Teruo Tagawa
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： G11C11/22 , H01L27/11502 , H01L27/11507
摘要： A method of manufacturing a ferroelectric memory device includes: forming a hydrogen barrier film which covers a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, wherein a thickness of an area of the hydrogen barrier film provided on the upper electrode is made greater than a thickness of an area of the hydrogen barrier film provided on a sidewall of the ferroelectric capacitor by forming the area of the hydrogen barrier film provided on the upper electrode in a plurality of layers.
摘要翻译：一种制造铁电存储器件的方法包括：形成覆盖包括下电极，铁电体膜和上电极的铁电电容器的氢阻挡膜，其中设置在上电极上的氢阻挡膜的面积的厚度通过在多层中形成设置在上电极上的氢阻挡膜的面积，使其大于设置在强电介质电容器的侧壁上的氢阻挡膜的面积的厚度。

2. 发明申请

US20080213924A1 Ferroelectric memory device and method of manufacturing the same 有权
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US20080213924A1
公开(公告)日：2008-09-04
申请号：US12069799
申请日：2008-02-13
申请人： Hiroaki Tamura , Teruo Tagawa
发明人： Hiroaki Tamura , Teruo Tagawa
IPC分类号： H01L21/02
CPC分类号： G11C11/22 , H01L27/11502 , H01L27/11507
摘要： A method of manufacturing a ferroelectric memory device includes: forming a hydrogen barrier film which covers a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, wherein a thickness of an area of the hydrogen barrier film provided on the upper electrode is made greater than a thickness of an area of the hydrogen barrier film provided on a sidewall of the ferroelectric capacitor by forming the area of the hydrogen barrier film provided on the upper electrode in a plurality of layers.
摘要翻译：一种制造铁电存储器件的方法包括：形成覆盖包括下电极，铁电体膜和上电极的铁电电容器的氢阻挡膜，其中设置在上电极上的氢阻挡膜的面积的厚度通过在多层中形成设置在上电极上的氢阻挡膜的面积，使其大于设置在强电介质电容器的侧壁上的氢阻挡膜的面积的厚度。

3. 发明申请

US20050230731A1 Metal thin film and method of manufacturing the same, dielectric capacitor and method of manufacturing the same, and semiconductor device 有权
标题翻译：金属薄膜及其制造方法，介质电容器及其制造方法以及半导体器件
公开(公告)号：US20050230731A1
公开(公告)日：2005-10-20
申请号：US11105368
申请日：2005-04-14
申请人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
发明人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
IPC分类号： H01L21/28 , H01B5/14 , H01B13/00 , H01L21/02 , H01L21/20 , H01L21/285 , H01L21/3205 , H01L21/82 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92
CPC分类号： H01L28/65 , H01L21/32051 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.
摘要翻译：一种设置在基板上并具有面心立方晶体结构的金属的金属薄膜，其中所述金属薄膜优先取向于（111）面，和（100）面不平行于基板存在于薄膜的表面上。在这种金属薄膜中，具有面心立方晶体结构的金属包括选自Pt，Ir和Ru中的至少一种元素。

4. 发明申请

US20050218443A1 Ferroelectric memory element and its manufacturing method 审中-公开
标题翻译：铁电存储元件及其制造方法
公开(公告)号：US20050218443A1
公开(公告)日：2005-10-06
申请号：US11089432
申请日：2005-03-24
申请人： Hiroaki Tamura , Teruo Tagawa
发明人： Hiroaki Tamura , Teruo Tagawa
IPC分类号： H01L27/105 , G11C11/22 , H01L21/02 , H01L21/316 , H01L21/8239 , H01L21/8246 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/76
CPC分类号： H01L27/1159 , H01L27/11502 , H01L27/11585 , H01L28/57
摘要： A ferroelectric capacitor is covered with a hydrogen barrier film, and an inner wall of a contact hole provided above an upper electrode of the ferroelectric capacitor is also covered with a hydrogen barrier film, thereby preventing hydrogen from infiltrating in the ferroelectric capacitor through a contact hole.
摘要翻译：铁电电容器被氢阻挡膜覆盖，并且设置在铁电电容器的上电极上方的接触孔的内壁也被氢阻挡膜覆盖，从而防止氢通过接触孔渗入铁电电容器。

5. 发明授权

US08076706B2 Ferroelectric memory device and method of manufacturing the same 有权
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US08076706B2
公开(公告)日：2011-12-13
申请号：US12069825
申请日：2008-02-13
申请人： Hiroaki Tamura , Teruo Tagawa
发明人： Hiroaki Tamura , Teruo Tagawa
IPC分类号： H01L21/8242
CPC分类号： G11C11/22 , H01L27/11502 , H01L27/11507
摘要： A ferroelectric memory device includes: a substrate; a first insulating film formed above the substrate, the first insulating film including a plug; a ferroelectric capacitor formed above the first insulating film; the ferroelectric capacitor including a lower electrode formed above the plug, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film; a hydrogen barrier film formed on the ferroelectric capacitor, a first thickness of the hydrogen barrier film formed on the upper electrode being greater than a second thickness of the hydrogen barrier film formed on a side surface of the ferroelectric capacitor; and the hydrogen barrier film including a first hydrogen barrier film and the second hydrogen barrier film, the first hydrogen barrier film formed on an upper surface of the upper electrode and a side surface of the upper electrode, the second hydrogen barrier film formed above the ferroelectric capacitor.
摘要翻译：铁电存储器件包括：衬底; 形成在所述基板上的第一绝缘膜，所述第一绝缘膜包括插头; 形成在所述第一绝缘膜上方的铁电电容器; 所述强电介质电容器包括形成在所述插塞上方的下电极，形成在所述下电极上的铁电体膜，形成在所述强电介质膜上的上电极; 形成在强电介质电容器上的氢阻挡膜，形成在上电极上的氢阻挡膜的第一厚度大于形成在强电介质电容器的侧面上的氢阻挡膜的第二厚度; 并且所述氢阻挡膜包括第一氢阻挡膜和所述第二氢阻挡膜，所述第一氢阻挡膜形成在所述上电极的上表面和所述上电极的侧表面上，所述第二氢阻挡膜形成在所述铁电体电容器。

6. 发明授权

US07425738B2 Metal thin film and method of manufacturing the same, dielectric capacitor and method of manufacturing the same, and semiconductor device 有权
标题翻译：金属薄膜及其制造方法，介质电容器及其制造方法以及半导体器件
公开(公告)号：US07425738B2
公开(公告)日：2008-09-16
申请号：US11105368
申请日：2005-04-14
申请人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
发明人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L21/32051 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.
摘要翻译：一种设置在基板上并具有面心立方晶体结构的金属的金属薄膜，其中所述金属薄膜优先取向于（111）面，和（100）面不平行于基板存在于薄膜的表面上。在这种金属薄膜中，具有面心立方晶体结构的金属包括选自Pt，Ir和Ru中的至少一种元素。

7. 发明申请

US20080144352A1 Ferroelectric memory device and method of manufacturing the same 有权
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US20080144352A1
公开(公告)日：2008-06-19
申请号：US12069825
申请日：2008-02-13
申请人： Hiroaki Tamura , Teruo Tagawa
发明人： Hiroaki Tamura , Teruo Tagawa
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , H01L27/11502 , H01L27/11507
摘要： A ferroelectric memory device includes: a substrate; a first insulating film formed above the substrate, the first insulating film including a plug; a ferroelectric capacitor formed above the first insulating film; the ferroelectric capacitor including a lower electrode formed above the plug, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film; a hydrogen barrier film formed on the ferroelectric capacitor, a first thickness of the hydrogen barrier film formed on the upper electrode being greater than a second thickness of the hydrogen barrier film formed on a side surface of the ferroelectric capacitor; and the hydrogen barrier film including a first hydrogen barrier film and the second hydrogen barrier film, the first hydrogen barrier film formed on an upper surface of the upper electrode and a side surface of the upper electrode, the second hydrogen barrier film formed above the ferroelectric capacitor.
摘要翻译：铁电存储器件包括：衬底; 形成在所述基板上的第一绝缘膜，所述第一绝缘膜包括插头; 形成在所述第一绝缘膜上方的铁电电容器; 所述强电介质电容器包括形成在所述插塞上方的下电极，形成在所述下电极上的铁电体膜，形成在所述强电介质膜上的上电极; 形成在强电介质电容器上的氢阻挡膜，形成在上电极上的氢阻挡膜的第一厚度大于形成在强电介质电容器的侧面上的氢阻挡膜的第二厚度; 并且所述氢阻挡膜包括第一氢阻挡膜和所述第二氢阻挡膜，所述第一氢阻挡膜形成在所述上电极的上表面和所述上电极的侧表面上，所述第二氢阻挡膜形成在所述铁电体电容器。

8. 发明申请

US20050230727A1 Ferroelectric memory device and method of manufacturing the same 审中-公开
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US20050230727A1
公开(公告)日：2005-10-20
申请号：US11088236
申请日：2005-03-23
申请人： Hiroaki Tamura , Teruo Tagawa
发明人： Hiroaki Tamura , Teruo Tagawa
IPC分类号： H01L21/768 , G11C11/22 , H01L21/82 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/76
CPC分类号： G11C11/22 , H01L27/11502 , H01L27/11507
摘要： A ferroelectric memory device includes: a substrate; a ferroelectric capacitor which is formed on the substrate and includes a lower electrode, a ferroelectric film, and an upper electrode; a hydrogen barrier film provided to cover the ferroelectric capacitor; and an interlayer dielectric provided on the hydrogen barrier film. A thickness of an area of the hydrogen barrier film provided on the upper electrode is greater than a thickness of an area of the hydrogen barrier film provided on a sidewall of the ferroelectric capacitor.
摘要翻译：铁电存储器件包括：衬底; 形成在基板上并且包括下电极，铁电体膜和上电极的铁电电容器; 设置用于覆盖铁电电容器的氢阻挡膜; 以及设置在氢阻挡膜上的层间电介质。设置在上电极上的氢阻挡膜的面积的厚度大于设置在铁电体电容器的侧壁上的氢阻挡膜的面积的厚度。

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