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1. 发明授权

US07425738B2 Metal thin film and method of manufacturing the same, dielectric capacitor and method of manufacturing the same, and semiconductor device 有权
标题翻译：金属薄膜及其制造方法，介质电容器及其制造方法以及半导体器件
公开(公告)号：US07425738B2
公开(公告)日：2008-09-16
申请号：US11105368
申请日：2005-04-14
申请人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
发明人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L21/32051 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.
摘要翻译：一种设置在基板上并具有面心立方晶体结构的金属的金属薄膜，其中所述金属薄膜优先取向于（111）面，和（100）面不平行于基板存在于薄膜的表面上。在这种金属薄膜中，具有面心立方晶体结构的金属包括选自Pt，Ir和Ru中的至少一种元素。

2. 发明申请

US20050230731A1 Metal thin film and method of manufacturing the same, dielectric capacitor and method of manufacturing the same, and semiconductor device 有权
标题翻译：金属薄膜及其制造方法，介质电容器及其制造方法以及半导体器件
公开(公告)号：US20050230731A1
公开(公告)日：2005-10-20
申请号：US11105368
申请日：2005-04-14
申请人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
发明人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
IPC分类号： H01L21/28 , H01B5/14 , H01B13/00 , H01L21/02 , H01L21/20 , H01L21/285 , H01L21/3205 , H01L21/82 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/92
CPC分类号： H01L28/65 , H01L21/32051 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.
摘要翻译：一种设置在基板上并具有面心立方晶体结构的金属的金属薄膜，其中所述金属薄膜优先取向于（111）面，和（100）面不平行于基板存在于薄膜的表面上。在这种金属薄膜中，具有面心立方晶体结构的金属包括选自Pt，Ir和Ru中的至少一种元素。

3. 发明授权

US06340533B1 Spin-valve magnetoresistance sensor and thin film magnetic head 有权
标题翻译：旋转阀磁阻传感器和薄膜磁头
公开(公告)号：US06340533B1
公开(公告)日：2002-01-22
申请号：US09443953
申请日：1999-11-19
申请人： Masaki Ueno , Hideyasu Nagai , Tatsuo Sawasaki , Fuminori Hikami
发明人： Masaki Ueno , Hideyasu Nagai , Tatsuo Sawasaki , Fuminori Hikami
IPC分类号： B32B1500
CPC分类号： B82Y25/00 , B32B15/04 , C22C45/04 , G11B5/3929 , G11B2005/3996 , H01F10/3268 , Y10T428/12465 , Y10T428/12576 , Y10T428/12937
摘要： A synthetic-type spin-valve MR sensor having a pinned magnetic layer with a multi-layer film structure. In one embodiment, on a substrate are formed by layering a free magnetic layer, a pinned magnetic layer including first and second ferromagnetic films, which are mutually coupled antiferromagnetically and which enclose a nonmagnetic coupling film. A nonmagnetic conductive layer is enclosed between these two magnetic layers. An antiferromagnetic layer neighbors the pinned magnetic layer. The first ferromagnetic film neighboring the antiferromagnetic layer is formed from a high-resistivity Co-base material. By making the products of the saturation magnetization and the film thickness of the first ferromagnetic layer and the second ferromagnetic layer substantially equal, the apparent magnetic moment of the pinned magnetic layer as a whole is zero, and the magnetostatic action on the free magnetic layer is eliminated or reduced. Shunting of the sense current to the first ferromagnetic film is suppressed, and a high rate of magnetoresistive change is obtained.
摘要翻译：一种具有多层膜结构的钉扎磁性层的合成型自旋阀MR传感器。在一个实施例中，在衬底上通过层叠自由磁性层，包括第一和第二铁磁膜的钉扎磁性层，其被反铁磁相互耦合并且包围非磁性耦合膜。在这两个磁性层之间封装有非磁性导电层。反铁磁层与被钉扎的磁性层相邻。与反铁磁层相邻的第一铁磁膜由高电阻率Co基材料形成。通过使第一铁磁层和第二铁磁层的饱和磁化强度和膜厚度的乘积基本相等，固定磁性层整体的表观磁矩为零，自由磁性层的静磁力为消除或减少抑制了对第一铁磁膜的感测电流的分流，并且获得了高的磁阻变化率。

4. 发明申请

US20060138506A1 Semiconductor memory device and method for manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20060138506A1
公开(公告)日：2006-06-29
申请号：US11311841
申请日：2005-12-19
申请人： Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
发明人： Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
IPC分类号： H01L21/00 , H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.
摘要翻译：半导体存储器件包括其上形成有半导体元件的衬底，在衬底上形成的层间电介质层，形成在层间电介质层中的插塞，形成在包括插塞上方的区域的区域中的粘合层，以及铁电电容器形成在粘合层的上方，具有下部电极，铁电体层和上部电极，其中在粘合层的侧壁的一部分中形成有氧化层。

5. 发明授权

US06930340B2 Memory cell array including ferroelectric capacitors, method for making the same, and ferroelectric memory device 失效
标题翻译：包括铁电电容器的存储单元阵列，其制造方法和铁电存储器件
公开(公告)号：US06930340B2
公开(公告)日：2005-08-16
申请号：US10376609
申请日：2003-03-03
申请人： Kazumasa Hasegawa , Eiji Natori , Masao Nakayama , Tatsuo Sawasaki , Hiroaki Tamura
发明人： Kazumasa Hasegawa , Eiji Natori , Masao Nakayama , Tatsuo Sawasaki , Hiroaki Tamura
IPC分类号： H01L21/8246 , H01L27/115 , H01L29/94 , H01L31/062
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159
摘要： A memory cell array is provided that includes ferroelectric capacitors with enhanced characteristics, a method of making the same, and a ferroelectric memory device including the memory cell.In a memory cell array, memory cells including ferroelectric capacitors are arrayed in a matrix. Each ferroelectric capacitor includes a lower electrode, an upper electrode, and a ferroelectric section disposed between the lower electrode and the upper electrode. The ferroelectric section is disposed in an intersection between the lower electrode and the upper electrode. An intermediate electrode is disposed between the ferroelectric section 14 and the upper electrode.
摘要翻译：提供一种存储单元阵列，其包括具有增强特性的铁电电容器，其制造方法和包括存储单元的铁电存储器件。在存储单元阵列中，包括铁电电容器的存储单元被排列成矩阵。每个铁电电容器包括下电极，上电极和设置在下电极和上电极之间的铁电部分。铁电部分设置在下电极和上电极之间的交叉点。中间电极设置在铁电部分14和上电极之间。

6. 发明授权

US07244979B2 Semiconductor memory device and method for manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07244979B2
公开(公告)日：2007-07-17
申请号：US11311841
申请日：2005-12-19
申请人： Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
发明人： Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.
摘要翻译：半导体存储器件包括其上形成有半导体元件的衬底，在衬底上形成的层间电介质层，形成在层间电介质层中的插塞，形成在包括插塞上方的区域的区域中的粘合层，以及铁电电容器形成在粘合层的上方，具有下部电极，铁电体层和上部电极，其中在粘合层的侧壁的一部分中形成有氧化层。

7. 发明授权

US06787371B2 Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same 有权
标题翻译：形成铁电体膜的方法，铁电存储器，其制造方法，半导体器件及其制造方法
公开(公告)号：US06787371B2
公开(公告)日：2004-09-07
申请号：US10397315
申请日：2003-03-27
申请人： Tatsuo Sawasaki
发明人： Tatsuo Sawasaki
IPC分类号： H01L2100
CPC分类号： C23C14/5813 , H01L21/02197 , H01L21/02282 , H01L21/02354 , H01L21/02356 , H01L21/31604 , H01L21/31691 , H01L21/76838 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： In a method of forming a ferroelectric film according to the present invention, pulsed laser light or pulsed lamp light is applied to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the film. Crystallization of the oxide is performed by applying pulsed laser light or pulsed lamp light to the film including the microcrystalline nuclei to form the ferroelectric film.
摘要翻译：在根据本发明的形成铁电体膜的方法中，将脉冲激光或脉冲灯光施加到形成在衬底上的非晶氧化物膜，以在膜中形成氧化物的微晶核。通过对包含微晶核的膜施加脉冲激光或脉冲灯光来进行氧化物的结晶，形成铁电体膜。

8. 发明授权

US06535363B1 Magnetic resistance effect type thin-film magnetic head and method for manufacturing the same 失效
标题翻译：磁阻效应型薄膜磁头及其制造方法
公开(公告)号：US06535363B1
公开(公告)日：2003-03-18
申请号：US09482784
申请日：2000-01-13
申请人： Masataka Hosomi , Tatsuo Sawasaki , Kouichi Matsuhashi
发明人： Masataka Hosomi , Tatsuo Sawasaki , Kouichi Matsuhashi
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3967
摘要： A thin-film magnetic head in which has a spin-valve element and a pair of electrode layers that are electrically connected to both ends of the element in the direction of width. A tantalum film is laminated as a protective layer on the uppermost part of the abovementioned element. A pair of electrode layers are caused to overlap on both end portions of the element. The tantalum oxide present in the areas on which the electrode layers overlap is removed prior to the formation of the electrode layers so that the electrical resistance between the electrode layers and the element is reduced.
摘要翻译：一种薄膜磁头，其中具有自旋阀元件和一对沿宽度方向电连接到元件两端的电极层。在上述元件的最上部层叠有钽膜作为保护层。使一对电极层在元件的两端部重叠。存在于电极层重叠的区域中的氧化钽在形成电极层之前被去除，使得电极层和元件之间的电阻降低。

9. 发明申请

US20100110148A1 PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME, LIQUID-EJECTING HEAD AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID-EJECTING APPARATUS 有权
标题翻译：压电元件及其制造方法，液体喷射头及其制造方法和液体喷射装置
公开(公告)号：US20100110148A1
公开(公告)日：2010-05-06
申请号：US12611823
申请日：2009-11-03
申请人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
发明人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
IPC分类号： B41J2/045 , H01L41/16 , H04R17/00
CPC分类号： B41J2/161 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , B41J2202/03 , H01L41/0973 , H01L41/1876 , H01L41/318 , Y10T29/42
摘要： A piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti). The piezoelectric film has a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) and has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(−) of −1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(−) denotes a negative coercive electric field intensity.
摘要翻译：压电元件包括含铅（Pb），锆（Zr）和钛（Ti）的压电膜。该压电膜具有满足Zr /（Ti + Zr）> Ti /（Ti + Zr）的关系的组成，并且具有Pm / 2Pr为1.95以上的极化电场磁滞回线，Vc（ - -1.75V以上，其中Pm表示饱和极化，Pr表示剩余极化，Vc（ - ）表示负矫顽电场强度。

10. 发明授权

US07547629B2 Ferroelectric capacitor and its manufacturing method and ferroelectric memory device 有权
标题翻译：铁电电容器及其制造方法和铁电存储器件
公开(公告)号：US07547629B2
公开(公告)日：2009-06-16
申请号：US11459742
申请日：2006-07-25
申请人： Hiroaki Tamura , Hiroyuki Mitsui , Tatsuo Sawasaki
发明人： Hiroaki Tamura , Hiroyuki Mitsui , Tatsuo Sawasaki
IPC分类号： H01L21/44 , H01L29/004
CPC分类号： H01L28/75 , H01L28/65
摘要： A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.
摘要翻译：制造铁电电容器的方法包括以下步骤：（a）形成第一晶体阻挡层; （b）通过氮化第一晶体阻挡层形成由氮化物构成的第二晶体阻挡层; （c）在第二晶体阻挡层上形成第一电极; （d）在所述第一电极上形成铁电体膜; 和（e）在所述强电介质膜上形成第二电极。

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