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1. 发明授权

US5565374A Method for fabricating a solid-state image sensing 失效
标题翻译：制造固态摄像的方法
公开(公告)号：US5565374A
公开(公告)日：1996-10-15
申请号：US464095
申请日：1995-06-05
申请人： Takashi Fukusho
发明人： Takashi Fukusho
IPC分类号： H01L27/148 , H01L31/0216 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/367 , H04N5/369 , H04N5/372 , H04N5/374 , H01L31/18 , H01L21/70 , H01L27/00
CPC分类号： H01L31/02164 , H01L27/14806 , H01L27/14825
摘要： A method for fabricating a solid-state image sensing device wherein a plurality of sensor regions are arranged in two-dimensions. A plurality of vertical transfer lines are associated with respective vertical rows of the plurality of sensor regions to transfer signal charges read from the sensor regions. A gate electrode is formed on an insulating layer over a signal charge transfer layer formed at the surface of the substrate. A buffer layer is formed containing hydrogen on an interlayer insulating layer over the gate electrode and the sensor regions. The light shielding layer is formed only over the buffer layer.
摘要翻译：一种用于制造固态图像感测装置的方法，其中多个传感器区域被二维排列。多个垂直传输线与多个传感器区域的相应垂直行相关联，以传送从传感器区域读取的信号电荷。在形成在基板表面的信号电荷转移层上的绝缘层上形成栅电极。在栅电极和传感器区域上的层间绝缘层上形成含有氢的缓冲层。遮光层仅形成在缓冲层上。

2. 发明授权

US5401679A Method of manufacturing charge transfer device 失效
标题翻译：制造电荷转移装置的方法
公开(公告)号：US5401679A
公开(公告)日：1995-03-28
申请号：US018389
申请日：1993-02-17
申请人： Takashi Fukusho
发明人： Takashi Fukusho
IPC分类号： H01L29/762 , H01L21/339 , H01L21/265 , H01L21/70 , H01L27/00
CPC分类号： H01L29/66954
摘要： To manufacture a charge transfer device, a first insulating film is deposited on a surface of a semiconductor substrate as a charge transfer region for transferring charge packets therein in one direction. Then, a plurality of first transfer electrodes are deposited on the first insulating film, the first transfer electrodes being spaced from each other, and a portion of each of the first transfer electrodes is removed to shape each of the first transfer electrodes into a staircase configuration. Thereafter, a first impurity is ion-implanted into the surface of the semiconductor substrate to create an impurity-diffused region therein which includes first and second different-potential subregions underneath each of the first transfer electrodes and a different-potential subregion underneath each of areas of the first insulating film between the first transfer electrodes. After the first impurity is ion-implanted, a mask is deposited on portions of the areas of the first insulating film and on side portions of the first transfer electrodes, and a second impurity is ion-implanted into the surface of the semiconductor substrate to divide the different-potential subregion underneath each of the areas into third and fourth different-potential subregions.
摘要翻译：为了制造电荷转移装置，第一绝缘膜沉积在半导体衬底的表面上，作为用于在一个方向上转印电荷包的电荷转移区域。然后，在第一绝缘膜上沉积多个第一转印电极，第一转印电极彼此间隔开，并且去除每个第一转印电极的一部分以使每个第一转印电极成为阶梯结构。此后，将第一杂质离子注入到半导体衬底的表面中以在其中产生杂质扩散区域，其中包括在每个第一转移电极下方的第一和第二不同电势子区域以及每个区域之下的不同电位子区域的第一传输电极之间的第一绝缘膜。在离子注入第一杂质之后，在第一绝缘膜的部分区域和第一转移电极的侧面上沉积掩模，并且将第二杂质离子注入到半导体衬底的表面中以分开每个区域之下的不同潜力分区域分为第三和第四个不同的潜在次区域。

3. 发明授权

US5238863A Process for fabricating gate insulating structure of a charge coupled device 失效
标题翻译：制造电荷耦合器件栅极绝缘结构的工艺
公开(公告)号：US5238863A
公开(公告)日：1993-08-24
申请号：US880403
申请日：1992-05-08
申请人： Takashi Fukusho , Yoshinori Toshmiya
发明人： Takashi Fukusho , Yoshinori Toshmiya
IPC分类号： H01L21/316 , H01L21/318 , H01L21/339 , H01L27/146 , H01L29/423 , H01L29/78
CPC分类号： H01L29/66954 , H01L29/42396 , Y10S148/114
摘要： A fabrication process includes at least a step of low pressure CVD for depositing an upper silicon oxide layer on a silicon nitride layer which is formed through a lower silicon oxide layer on a silicon substrate, a next step of forming a gate electrode on the second oxide layer, and a further step of selectively removing the second oxide layer and instead forming a similar silicon oxide layer anew. This process can meet the demand for device miniaturization, improve the C-V characteristic of a MOS capacitor and provide uniform insulating layers.
摘要翻译：一种制造工艺包括至少一个低压CVD步骤，用于在硅衬底上通过下部氧化硅层形成的氮化硅层上沉积上部氧化硅层，在第二氧化物上形成栅电极的下一步骤层，以及再次选择性地除去第二氧化物层并替代地形成类似的氧化硅层的步骤。该过程可以满足器件小型化的需求，提高MOS电容器的C-V特性，并提供均匀的绝缘层。

4. 发明授权

US06614479B1 Solid-state image pickup device in-layer lens with antireflection film with intermediate index of refraction 有权
$Solid-state image pickup device in-layer lens with antireflection film with intermediate index of refraction$
标题翻译：具有中等折射率的抗反射膜的固态图像拾取装置层内透镜
公开(公告)号：US06614479B1
公开(公告)日：2003-09-02
申请号：US09161669
申请日：1998-09-29
申请人： Takashi Fukusho , Atsushi Asai
发明人： Takashi Fukusho , Atsushi Asai
IPC分类号： H04N314
CPC分类号： H01L27/14627 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L31/02162 , H01L31/02325 , H01L31/02327
摘要： In a solid-state image pickup device including a light receiving sensor portion in a surface layer portion of a substrate, an in-layer lens disposed above the light receiving sensor portion, a color filter disposed on the in-layer lens, and an interlayer film disposed below the in-layer lens, an antireflection film is formed between the in-layer lens and the color filter, the antireflection film being formed of material having a refractive index which is an intermediate value between the refractive index of the in-layer lens and the refractive index of the color filter. Further, another antireflection film is formed between the in-layer lens and the interlayer film, the other antireflection film being formed of material having a refractive index which is an intermediate value between the refractive index of the in-layer lens and the refractive index of the interlayer film.
摘要翻译：在包括基板的表面层部分中的光接收传感器部分的固态图像拾取装置中，设置在光接收传感器部分上方的层内透镜，设置在层内透镜上的滤色器和中间层设置在层内透镜下方的膜，在层间透镜和滤色器之间形成防反射膜，抗反射膜由折射率为介于层间透镜的折射率之间的中间值的材料形成透镜和滤色器的折射率。此外，在层间透镜和层间膜之间形成另一防反射膜，另一防反射膜由折射率为层内透镜的折射率与折射率之间的中间值的材料形成中间膜。

5. 发明授权

US5393997A CCD having transfer electrodes of 3 layers 失效
标题翻译： CCD具有3层的传输电极
公开(公告)号：US5393997A
公开(公告)日：1995-02-28
申请号：US264257
申请日：1994-06-22
申请人： Takashi Fukusho , Isao Hirota , Motoyuki Koike
发明人： Takashi Fukusho , Isao Hirota , Motoyuki Koike
IPC分类号： H01L27/14 , H01L29/423 , H01L29/78 , H01L31/00
CPC分类号： H01L29/42396
摘要： A solid state imager device comprises a plurality of pixels arranged in rows and columns, each of the pixels consisting of a light sensing element and a vertical transfer portion adjacent to the light sensing element, the vertical transfer portion having three gate portions such as a first, a second and a third gate portions insulated each other, the third gate portion located in the center of the three gate portions, a plurality of rows of base portions disposed in the horizontal direction and connecting the respective gate portions, a vertical wiring device disposed over the gate portions through an insulating layer, the vertical wiring device including, a first wiring film connecting the first gate portions, a second wiring film connecting the second gate portions, a third wiring film connecting the third gate portions which is connected to the odd row of the base portions, a fourth wiring film connecting the third gate portions which is connected to the even rows of the base portions, a read out pulse device for supplying a read out voltage pulse to the third and fourth wiring films, and a transfer pulse device for supplying a transfer voltage pulse to the three gate portions so as to transfer signal charges in the vertical direction.
摘要翻译：固态成像装置包括排列成行和列的多个像素，每个像素由光感测元件和与光感测元件相邻的垂直传送部分组成，垂直传送部分具有三个门部分，例如第一，第二栅极部分和第三栅极部分彼此绝缘，位于三个栅极部分的中心的第三栅极部分，沿水平方向设置并连接各个栅极部分的多排基底部分，垂直布线装置设置通过绝缘层在栅极部分之上，垂直布线装置包括：连接第一栅极部分的第一布线膜，连接第二栅极部分的第二布线膜，连接第三栅极部分的第三布线膜，其连接到奇数连接基座部分的偶数行的第四布线膜 ns，用于向第三和第四布线膜提供读出电压脉冲的读出脉冲装置，以及用于向三个栅极部分提供转印电压脉冲以在垂直方向上传送信号电荷的转印脉冲装置。

6. 发明授权

US07259791B2 Method of making solid-state image pickup device in-layer lens with antireflection film with intermediate index of refraction 有权
$Method of making solid-state image pickup device in-layer lens with antireflection film with intermediate index of refraction$
标题翻译：制造具有中等折射率的防反射膜的固态摄像装置层内透镜的方法
公开(公告)号：US07259791B2
公开(公告)日：2007-08-21
申请号：US10619883
申请日：2003-07-15
申请人： Takashi Fukusho , Atsushi Asai
发明人： Takashi Fukusho , Atsushi Asai
IPC分类号： H04N5/225
CPC分类号： H01L27/14627 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L31/02162 , H01L31/02325 , H01L31/02327
摘要： In a solid-state image pickup device including a light receiving sensor portion in a surface layer portion of a substrate, an in-layer lens disposed above the light receiving sensor portion, a color filter disposed on the in-layer lens, and an interlayer film disposed below the in-layer lens, an antireflection film is formed between the in-layer lens and the color filter, the antireflection film being formed of material having a refractive index which is an intermediate value between the refractive index of the in-layer lens and the refractive index of the color filter. Further, another antireflection film is formed between the in-layer lens and the interlayer film, the other antireflection film being formed of material having a refractive index which is an intermediate value between the refractive index of the in-layer lens and the refractive index of the interlayer film.
摘要翻译：在包括基板的表面层部分中的光接收传感器部分的固态图像拾取装置中，设置在光接收传感器部分上方的层内透镜，设置在层内透镜上的滤色器和中间层设置在层内透镜下方的膜，在层间透镜和滤色器之间形成防反射膜，抗反射膜由折射率为介于层间透镜的折射率之间的中间值的材料形成透镜和滤色器的折射率。此外，在层间透镜和层间膜之间形成另一防反射膜，另一防反射膜由折射率为层内透镜的折射率与折射率之间的中间值的材料形成中间膜。

7. 发明授权

US06569703B1 Method of manufacturing solid-state image sensing device 失效
标题翻译：制造固态摄像装置的方法
公开(公告)号：US06569703B1
公开(公告)日：2003-05-27
申请号：US09116120
申请日：1998-07-16
申请人： Takashi Fukusho
发明人： Takashi Fukusho
IPC分类号： H01L2100
CPC分类号： H01L27/14685 , H01L27/148
摘要： A method of manufacturing a solid-state image sensing device in which a light-sensitive sensor part for photoelectric transfer is formed on the surface of a substrate and a light shielding film for preventing light from being incident on the substrate except the light-sensitive sensor part is formed is provided. First, a transfer electrode is formed on the substrate via an insulating film and after an interlayer insulating film for covering the transfer electrode is further formed, a planarized film for covering the interlayer insulating film is formed. Next, only the location of the planarized film to be a light shielding area for forming a light shielding film is selectively etched, a concave portion is formed and a groove deep enough to reach the vicinity of the surface of the substrate is formed by etching the planarized film over the periphery of the light-sensitive sensor part and near the side of the transfer electrode. Afterward, the material of a light shielding film is embedded in the concave portion and inside the groove and a light shielding film is formed. The provision of the solid-state image sensing device and the manufacturing method in which the efficiency of condensing beams to the light-sensitive sensor part is enhanced and the sensitivity is enhanced is thus desired.
摘要翻译：一种制造固态摄像装置的方法，其中在基板的表面上形成用于光电转移的感光传感器部分和用于防止光入射到基板之外的光敏传感器的光屏蔽膜提供了一部分形成。首先，通过绝缘膜在基板上形成转印电极，在形成用于覆盖转印电极的层间绝缘膜之后，形成用于覆盖层间绝缘膜的平坦化膜。接下来，仅选择性地蚀刻作为用于形成遮光膜的遮光区域的平坦化膜的位置，形成凹部，通过蚀刻形成深度足以到达基板表面附近的槽在感光传感器部分的周边上并且靠近转印电极侧的平坦化膜。之后，将遮光膜的材料嵌入到凹部和槽内，形成遮光膜。因此期望提供固态图像感测装置和其中使光束到光敏传感器部分的聚光效率提高并且提高灵敏度的制造方法。

8. 发明授权

US5523609A Solid-state image sensing device having a vertical transfer line and a charge transfer region with buffer layer containing hydrogen between light shielding layer and insulating layer 失效
标题翻译：具有垂直传输线的固态图像感测装置和在遮光层和绝缘层之间具有包含氢的缓冲层的电荷转移区域
公开(公告)号：US5523609A
公开(公告)日：1996-06-04
申请号：US362920
申请日：1994-12-23
申请人： Takashi Fukusho
发明人： Takashi Fukusho
IPC分类号： H01L27/148 , H01L31/0216 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/367 , H04N5/369 , H04N5/372 , H04N5/374 , H01L31/0232
CPC分类号： H01L31/02164 , H01L27/14806 , H01L27/14825
摘要： A solid-state image sensing device, such as a charge-coupled image sensor, has a plurality of sensor regions arranged in two-dimensions with vertical transfer lines associated with respective vertical rows of the sensor regions for transfer of signal charges read from the sensor regions. Each vertical transfer line comprises a charge transfer region for transferring the signal charges read from the sensor regions. A gate electrode is formed on an insulating layer over the signal charge transfer regions, a light shielding layer is formed on an interlayer insulating layer over the gate electrode, and a buffer film containing hydrogen underlies the light shielding layer. The buffer layer, such as a buffer layer containing hydrogen, prevents damage attributable to film forming processes and the diffusion of impurities from the light shielding layer, and supplies hydrogen into the interface between the substrate and an oxide film to improve the condition of the interface. Thus, dark current can be reduced.
摘要翻译：诸如电荷耦合图像传感器的固态图像感测装置具有多个传感器区域，二维布置有与传感器区域的相应垂直行相关联的垂直传输线，用于传送从传感器读取的信号电荷地区。每个垂直传输线包括用于传送从传感器区域读取的信号电荷的电荷转移区域。在信号电荷转移区域上的绝缘层上形成栅电极，在栅电极上的层间绝缘层上形成遮光层，在该遮光层的下面形成含有氢的缓冲膜。缓冲层，例如含有氢的缓冲层，可以防止由于成膜过程引起的损伤和杂质从遮光层的扩散，并将氢气供应到基板和氧化膜之间的界面，以改善界面的状态。因此，可以减小暗电流。

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