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    • 1. 发明申请
    • FLAT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 平面显示装置及其制造方法
    • US20120313905A1
    • 2012-12-13
    • US13330328
    • 2011-12-19
    • Sung-Gu KANGSung Il Park
    • Sung-Gu KANGSung Il Park
    • G09G5/00H01J9/00
    • G02F1/1345H01L27/124H01L27/3276
    • The present invention relates to a flat display device and method of fabricating the same which can make narrow bezel design easy and minimize resistance variation between adjacent link lines for improving of a picture quality. The flat display device includes a display region having a plurality of pixels, a driving integrated circuit for forwarding driving signals for driving the plurality of pixels, and a plurality of link lines for transmitting the driving signals to the display region, wherein each of the plurality of link lines includes a first metal line, a second metal line formed on a layer different from the first metal line, and a contact portion for connecting the first and second metal lines to each other.
    • 平板显示装置及其制造方法技术领域本发明涉及一种平板显示装置及其制造方法,其可以使窄边框设计容易,并使相邻链接线之间的电阻变化最小化,从而提高图像质量。 平面显示装置包括具有多个像素的显示区域,用于转发用于驱动多个像素的驱动信号的驱动集成电路和用于将驱动信号传输到显示区域的多个链接线,其中,多个 的连接线包括形成在不同于第一金属线的层上的第一金属线,第二金属线和用于将第一和第二金属线彼此连接的接触部。
    • 5. 发明授权
    • Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device
    • 在适合于电子发射器件的较低温度下形成碳纳米管
    • US07175494B1
    • 2007-02-13
    • US10600226
    • 2003-06-19
    • Sung Gu KangWoo Kyung BaeJung Jae Kim
    • Sung Gu KangWoo Kyung BaeJung Jae Kim
    • H01J9/04
    • H01J9/025B82Y10/00B82Y30/00B82Y40/00C01B32/162H01J2201/30469
    • An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300° C. to 500° C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.
    • 另一方面,电子发射器件包含图案化成位于电子发射元件之间的多个横向分开的部分的垂直发射极,另一方面,衬底。 包含碳纳米管的电子发射元件在与下面的基底的热应力相容的300℃至500℃的温度范围内生长。 电子发射元件在颗粒化的催化剂层上生长,其在如此低的温度范围内提供用于生长电子发射元件的大的表面积。 为了确保碳纳米管的生长均匀性,将颗粒状基材浸入预生长等离子体气体中以增强用于碳扩散的颗粒状基材的表面扩散性能。
    • 7. 发明授权
    • Method for forming carbon nanotubes with intermediate purification steps
    • 用中间纯化步骤形成碳纳米管的方法
    • US06841003B2
    • 2005-01-11
    • US10302206
    • 2002-11-22
    • Sung Gu KangCraig Bae
    • Sung Gu KangCraig Bae
    • C30B25/10C30B25/14
    • C30B25/105B82Y30/00C30B29/605Y10S977/843Y10S977/844Y10S977/845
    • Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.
    • 使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。 在纳米管已经生长之后,对新形成的纳米管结构进行纯化步骤。 纯化从生长的纳米管的壁上除去石墨和其他碳颗粒,并控制纳米管层的厚度。 在相同基板温度下用等离子体进行纯化。 为了进行纯化,使用作为等离子体化学沉积用原料气体的添加剂而添加的含氢气体作为等离子体源气体。 由于用于纯化等离子体的源气体作为添加剂添加到用于化学等离子体沉积的源气体中,所以生长的碳纳米管通过与在等离子体处理室中维持的连续等离子体反应来纯化。 这样就不需要清除和排空等离子体处理室,并且可以用净化等离子体源气体稳定压力。 因此,可以在不关闭等离子体处理室中的等离子体的情况下进行生长和净化。
    • 8. 发明授权
    • Method for forming carbon nanotubes with post-treatment step
    • 后处理步骤形成碳纳米管的方法
    • US06841002B2
    • 2005-01-11
    • US10302126
    • 2002-11-22
    • Sung Gu KangCraig Bae
    • Sung Gu KangCraig Bae
    • C30B25/00C30B29/60C30B29/66C30B33/12C03B15/24
    • C30B25/00B82Y30/00C30B29/605C30B33/12Y10S977/843Y10S977/844Y10S977/845
    • Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.
    • 使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。 在纳米管已经生长之后,对新形成的纳米管结构进行后处理步骤。 后处理从生长的纳米管的壁上除去石墨和其他碳颗粒,并控制纳米管层的厚度。 在相同基板温度下用等离子体进行后处理。 对于后处理,使用含氢气体作为等离子体源气体。 在从纳米管生长步骤到后处理步骤的过渡期间,等离子体处理室中的压力用上述净化气体稳定,而不关闭室中的等离子体。 这样就不需要清洗和排空等离子体处理室。