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1. 发明授权

US07016008B2 Method of fabricating liquid crystal display device having sealant patterns, dummy patterns, and substrate protective patterns 失效
标题翻译：制造具有密封剂图案，虚拟图案和基板保护图案的液晶显示装置的方法
公开(公告)号：US07016008B2
公开(公告)日：2006-03-21
申请号：US10310847
申请日：2002-12-06
申请人： Tae Yong Jung , Sung Gu Kang , Jae Young Jeon
发明人： Tae Yong Jung , Sung Gu Kang , Jae Young Jeon
IPC分类号： G02F1/1339
CPC分类号： G02F1/133351 , G02F1/1339
摘要： A method of fabricating a liquid crystal display which prevents breakage of a substrate in a thin liquid crystal display panel. The method includes forming a plurality of sealant patterns defining a liquid layer on a first substrate, a plurality of dummy patterns between the sealant patterns, and a plurality of protective patterns on crossings between the dummy patterns; bonding a second substrate to the first substrate, forming a plurality of scribing lines on a surface of either the first or second substrate; and cutting the first and second substrates along the scribing lines.
摘要翻译：一种液晶显示器的制造方法，其防止薄型液晶显示面板中的基板断裂。该方法包括在第一基板上形成限定液体层的多个密封剂图案，密封剂图案之间的多个虚设图案和虚设图案之间的交叉处的多个保护图案; 将第二基板接合到第一基板，在第一或第二基板的表面上形成多个划线; 以及沿着划线切割第一和第二基板。

2. 发明授权

US07554630B2 Liquid crystal display device having common line parallel to and between gate line and pixel electrode with light shield projecting from common line parallel to data line and overlapping area between data line and pixel electrode 有权
标题翻译：具有平行于栅极线和像素电极的公共线的液晶显示装置，具有平行于数据线的公共线突出的光屏蔽以及数据线和像素电极之间的重叠区域
公开(公告)号：US07554630B2
公开(公告)日：2009-06-30
申请号：US11024807
申请日：2004-12-30
申请人： Keuk Sang Kwon , Dae Lim Park , Seong Soo Hwang , Sung Gu Kang , Jong Hwae Lee , Bung Goo Kim , Jong A Choi
发明人： Keuk Sang Kwon , Dae Lim Park , Seong Soo Hwang , Sung Gu Kang , Jong Hwae Lee , Bung Goo Kim , Jong A Choi
IPC分类号： G02F1/1333
CPC分类号： G02F1/136209 , G02F1/136213 , G02F2001/136218
摘要： An LCD device with improved an aperture ratio and decreased parasitic capacitance has a passivation layer of an inorganic material and which includes a gate line on a first substrate; a gate insulating layer on an entire surface of the first substrate including the gate line; a data line on the gate insulating layer in perpendicular to the gate line, to define a pixel region; a thin film transistor at a crossing portion of the gate and data lines; a passivation layer on the entire surface of the first substrate including the thin film transistor; a pixel electrode on the passivation layer, for being connected with a drain electrode of the thin film transistor; and a light-shielding metal for receiving a voltage, formed between the data line and the pixel electrode, to prevent a parasitic capacitance between the data line and the pixel electrode.
摘要翻译：具有提高开口率和降低的寄生电容的LCD器件具有无机材料的钝化层，并且在第一衬底上包括栅极线; 在包括栅极线的第一基板的整个表面上的栅极绝缘层; 栅极绝缘层上垂直于栅极线的数据线，以限定像素区域; 在栅极和数据线的交叉部分处的薄膜晶体管; 在包括薄膜晶体管的第一衬底的整个表面上的钝化层; 钝化层上的像素电极，用于与薄膜晶体管的漏电极连接; 以及用于接收形成在数据线和像素电极之间的电压的遮光金属，以防止数据线和像素电极之间的寄生电容。

3. 发明申请

US20080266214A1 SUB-PIXEL CURRENT MEASUREMENT FOR OLED DISPLAY 审中-公开
标题翻译：用于OLED显示器的子像素电流测量
公开(公告)号：US20080266214A1
公开(公告)日：2008-10-30
申请号：US12018455
申请日：2008-01-23
申请人： Walter Edward Naugler , Sung Gu Kang , Cheon Hong Kim
发明人： Walter Edward Naugler , Sung Gu Kang , Cheon Hong Kim
IPC分类号： G09G3/30
CPC分类号： G09G3/3225 , G09G3/3233 , G09G2320/0233 , G09G2320/029 , G09G2320/0295 , G09G2330/02
摘要： An active matrix drive system drives an emissive display device such as an organic light-emitting diode display and is configured to measure sub-pixel current in the emissive display device. One or more power column power lines of the emissive display device are turned off while sub-pixel current is measured. As a result, the sub-pixel current is relative large compared to the background current of the emissive display device, which facilitates accurate measurement of the sub-pixel current.
摘要翻译：有源矩阵驱动系统驱动诸如有机发光二极管显示器的发射显示装置，并且被配置为测量发射显示装置中的子像素电流。在发射子像素电流被测量时，发射显示装置的一个或多个电源列电源线被截止。结果，与发射显示装置的背景电流相比，子像素电流相对较大，这有助于子像素电流的精确测量。

4. 发明授权

US07110069B2 Liquid crystal display with two surface display function 有权
公开(公告)号：US07110069B2
公开(公告)日：2006-09-19
申请号：US11081672
申请日：2005-03-17
申请人： Sung Gu Kang , Seung Jun Moon
发明人： Sung Gu Kang , Seung Jun Moon
IPC分类号： G02F1/1333
CPC分类号： G02F1/1362 , G02F1/133514 , G02F2001/133342
摘要： A liquid crystal display having two display surfaces includes a first substrate supporting a first thin film transistor array and a first color filter array, and a second substrate supporting a second color filter array facing the first thin film transistor array and a second thin film transistor facing the first color filter array, and a layer of liquid crystal material provided between the first and second substrates.

5. 发明授权

US06885413B2 Liquid crystal display with two surface display function 失效
公开(公告)号：US06885413B2
公开(公告)日：2005-04-26
申请号：US10314252
申请日：2002-12-09
申请人： Sung Gu Kang , Seung Jun Moon
发明人： Sung Gu Kang , Seung Jun Moon
IPC分类号： G02F1/133 , G02F1/1335 , G02F1/1362
CPC分类号： G02F1/1362 , G02F1/133514 , G02F2001/133342
摘要： A liquid crystal display having two display surfaces includes a first substrate supporting a first thin film transistor array and a first color filter array, and a second substrate supporting a second color filter array facing the first thin film transistor array and a second thin film transistor facing the first color filter array, and a layer of liquid crystal material provided between the first and second substrates.

6. 发明授权

US06455357B2 Thin film transistor and method of fabricating the same 失效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06455357B2
公开(公告)日：2002-09-24
申请号：US09810232
申请日：2001-03-19
申请人： Sung Gu Kang , Young Jun Jeon
发明人： Sung Gu Kang , Young Jun Jeon
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/78618 , Y10S438/978
摘要： A thin film transistor is provided that includes a substrate, a gate electrode formed on the substrate, and a gate insulating layer formed all over the substrate including the gate electrode. A first semiconductor layer is formed on the gate insulating layer, and a second semiconductor layer is formed on the first semiconductor layer. Source and drain electrodes are separately etched together to expose a prescribed portion surface of the second semiconductor layer over the gate electrode. The source and drain electrodes adjacent to the prescribed portion of the second semiconductor layer are non-linearly inclined at their edges. A method of fabricating a thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode and the substrate, forming a first semiconductor layer on the gate insulating layer and forming a second semiconductor layer on the first semiconductor layer. First and second conductive materials are deposited on the second semiconductor layer. A single etching process is performed on the first and second conductive materials using the same etching gas to expose a prescribed part of the second semiconductor layer over the gate electrode to make the etched first and second conductive materials have a tier structure at edges of the prescribed part.
摘要翻译：提供一种薄膜晶体管，其包括基板，形成在基板上的栅极电极和形成在包括栅极电极的基板整个上的栅极绝缘层。在栅绝缘层上形成第一半导体层，在第一半导体层上形成第二半导体层。源极和漏极分别被蚀刻在一起以在栅电极上露出第二半导体层的规定部分表面。与第二半导体层的规定部分相邻的源极和漏极在其边缘处非线性倾斜。制造薄膜晶体管的方法包括在基板上形成栅电极; 在所述栅极电极和所述基板上形成栅极绝缘层，在所述栅极绝缘层上形成第一半导体层，并在所述第一半导体层上形成第二半导体层。第一和第二导电材料沉积在第二半导体层上。使用相同的蚀刻气体对第一和第二导电材料进行单蚀刻处理，以在栅电极上露出第二半导体层的规定部分，以使蚀刻的第一和第二导电材料在规定的边缘处具有层结构部分。

7. 发明授权

US06255668B1 Thin film transistor with inclined eletrode side surfaces 有权
标题翻译：具有倾斜电极侧表面的薄膜晶体管
公开(公告)号：US06255668B1
公开(公告)日：2001-07-03
申请号：US09317952
申请日：1999-05-25
申请人： Sung Gu Kang , Young Jun Jeon
发明人： Sung Gu Kang , Young Jun Jeon
IPC分类号： H01L2900
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/78618 , Y10S438/978
摘要： A thin film transistor is provided that includes a substrate, a gate electrode formed on the substrate, and a gate insulating layer formed all over the substrate including the gate electrode. A first semiconductor layer is formed on the gate insulating layer, and a second semiconductor layer is formed on the first semiconductor layer. Source and drain electrodes are separately etched together to expose a prescribed portion surface of the second semiconductor layer over the gate electrode. The source and drain electrodes adjacent to the prescribed portion of the second semiconductor layer are non-linearly inclined at their edges. A method of fabricating a thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode and the substrate, forming a first semiconductor layer on the gate insulating layer and forming a second semiconductor layer on the first semiconductor layer. First and second conductive materials are deposited on the second semiconductor layer. A single etching process is performed on the first and second conductive materials using the same etching gas to expose a prescribed part of the second semiconductor layer over the gate electrode to make the etched first and second conductive materials have a tier structure at edges of the prescribed part.
摘要翻译：提供一种薄膜晶体管，其包括基板，形成在基板上的栅极电极和形成在包括栅极电极的基板整个上的栅极绝缘层。在栅绝缘层上形成第一半导体层，在第一半导体层上形成第二半导体层。源极和漏极分别被蚀刻在一起以在栅电极上露出第二半导体层的规定部分表面。与第二半导体层的规定部分相邻的源极和漏极在其边缘处非线性倾斜。制造薄膜晶体管的方法包括在基板上形成栅电极; 在所述栅极电极和所述基板上形成栅极绝缘层，在所述栅极绝缘层上形成第一半导体层，并在所述第一半导体层上形成第二半导体层。第一和第二导电材料沉积在第二半导体层上。使用相同的蚀刻气体对第一和第二导电材料进行单蚀刻处理，以在栅电极上露出第二半导体层的规定部分，以使蚀刻的第一和第二导电材料在规定的边缘处具有层结构部分。

8. 发明授权

US07175494B1 Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device 失效
标题翻译：在适合于电子发射器件的较低温度下形成碳纳米管
公开(公告)号：US07175494B1
公开(公告)日：2007-02-13
申请号：US10600226
申请日：2003-06-19
申请人： Sung Gu Kang , Woo Kyung Bae , Jung Jae Kim
发明人： Sung Gu Kang , Woo Kyung Bae , Jung Jae Kim
IPC分类号： H01J9/04
CPC分类号： H01J9/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01J2201/30469
摘要： An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300° C. to 500° C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.
摘要翻译：另一方面，电子发射器件包含图案化成位于电子发射元件之间的多个横向分开的部分的垂直发射极，另一方面，衬底。包含碳纳米管的电子发射元件在与下面的基底的热应力相容的300℃至500℃的温度范围内生长。电子发射元件在颗粒化的催化剂层上生长，其在如此低的温度范围内提供用于生长电子发射元件的大的表面积。为了确保碳纳米管的生长均匀性，将颗粒状基材浸入预生长等离子体气体中以增强用于碳扩散的颗粒状基材的表面扩散性能。

9. 发明授权

US06841003B2 Method for forming carbon nanotubes with intermediate purification steps 失效
标题翻译：用中间纯化步骤形成碳纳米管的方法
公开(公告)号：US06841003B2
公开(公告)日：2005-01-11
申请号：US10302206
申请日：2002-11-22
申请人： Sung Gu Kang , Craig Bae
发明人： Sung Gu Kang , Craig Bae
IPC分类号： C30B25/10 , C30B25/14
CPC分类号： C30B25/105 , B82Y30/00 , C30B29/605 , Y10S977/843 , Y10S977/844 , Y10S977/845
摘要： Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.
摘要翻译：使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。在纳米管已经生长之后，对新形成的纳米管结构进行纯化步骤。纯化从生长的纳米管的壁上除去石墨和其他碳颗粒，并控制纳米管层的厚度。在相同基板温度下用等离子体进行纯化。为了进行纯化，使用作为等离子体化学沉积用原料气体的添加剂而添加的含氢气体作为等离子体源气体。由于用于纯化等离子体的源气体作为添加剂添加到用于化学等离子体沉积的源气体中，所以生长的碳纳米管通过与在等离子体处理室中维持的连续等离子体反应来纯化。这样就不需要清除和排空等离子体处理室，并且可以用净化等离子体源气体稳定压力。因此，可以在不关闭等离子体处理室中的等离子体的情况下进行生长和净化。

10. 发明授权

US06841002B2 Method for forming carbon nanotubes with post-treatment step 失效
标题翻译：后处理步骤形成碳纳米管的方法
公开(公告)号：US06841002B2
公开(公告)日：2005-01-11
申请号：US10302126
申请日：2002-11-22
申请人： Sung Gu Kang , Craig Bae
发明人： Sung Gu Kang , Craig Bae
IPC分类号： C30B25/00 , C30B29/60 , C30B29/66 , C30B33/12 , C03B15/24
CPC分类号： C30B25/00 , B82Y30/00 , C30B29/605 , C30B33/12 , Y10S977/843 , Y10S977/844 , Y10S977/845
摘要： Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.
摘要翻译：使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。在纳米管已经生长之后，对新形成的纳米管结构进行后处理步骤。后处理从生长的纳米管的壁上除去石墨和其他碳颗粒，并控制纳米管层的厚度。在相同基板温度下用等离子体进行后处理。对于后处理，使用含氢气体作为等离子体源气体。在从纳米管生长步骤到后处理步骤的过渡期间，等离子体处理室中的压力用上述净化气体稳定，而不关闭室中的等离子体。这样就不需要清洗和排空等离子体处理室。

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