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1. 发明授权

US07175494B1 Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device 失效
标题翻译：在适合于电子发射器件的较低温度下形成碳纳米管
公开(公告)号：US07175494B1
公开(公告)日：2007-02-13
申请号：US10600226
申请日：2003-06-19
申请人： Sung Gu Kang , Woo Kyung Bae , Jung Jae Kim
发明人： Sung Gu Kang , Woo Kyung Bae , Jung Jae Kim
IPC分类号： H01J9/04
CPC分类号： H01J9/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01J2201/30469
摘要： An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300° C. to 500° C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.
摘要翻译：另一方面，电子发射器件包含图案化成位于电子发射元件之间的多个横向分开的部分的垂直发射极，另一方面，衬底。包含碳纳米管的电子发射元件在与下面的基底的热应力相容的300℃至500℃的温度范围内生长。电子发射元件在颗粒化的催化剂层上生长，其在如此低的温度范围内提供用于生长电子发射元件的大的表面积。为了确保碳纳米管的生长均匀性，将颗粒状基材浸入预生长等离子体气体中以增强用于碳扩散的颗粒状基材的表面扩散性能。

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