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    • 5. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY
    • 有机发光二极管显示
    • US20130193456A1
    • 2013-08-01
    • US13609806
    • 2012-09-11
    • Sung-Soo LeeOk-Keun SongYoung-Mo KooSe-Il Kim
    • Sung-Soo LeeOk-Keun SongYoung-Mo KooSe-Il Kim
    • H01L33/50
    • H01L27/3213H01L27/322H01L27/3258
    • An organic light emitting diode display includes a substrate, a white pixel and a color pixel, each including an emission area, a non-emission area, a thin film transistor on the substrate, and an organic light emitting element on the substrate and electrically connected to the thin film transistor and configured to emit light at the emission area, a color filter layer between the organic light emitting element of the color pixel and the substrate at the emission area of the color pixel, and an overcoat layer having an overcoat opening corresponding to the emission area of the white pixel, and covering the color filter layer between the organic light emitting element of the color pixel and the color filter layer.
    • 有机发光二极管显示器包括基板,白色像素和彩色像素,每个基板包括发光区域,非发光区域,基板上的薄膜晶体管和基板上的有机发光元件,并且电连接 并且被配置为在所述发光区域发光,所述彩色像素的有机发光元件与所述彩色像素的发射区域处的所述衬底之间的滤色器层,以及具有对应于所述彩色像素的外涂层开口的外涂层 到白色像素的发射区域,并且覆盖彩色像素的有机发光元件和滤色器层之间的滤色器层。
    • 6. 发明授权
    • Page-buffer and non-volatile semiconductor memory including page buffer
    • 页缓冲器和非易失性半导体存储器,包括页缓冲器
    • US08493785B2
    • 2013-07-23
    • US13465246
    • 2012-05-07
    • Sung-Soo LeeYoung-Ho LimHyun-Chul ChoDong-Hyuk Chae
    • Sung-Soo LeeYoung-Ho LimHyun-Chul ChoDong-Hyuk Chae
    • G11C11/34
    • G11C16/0483G11C16/26
    • A non-volatile memory device includes a memory cell array which includes a plurality of non-volatile memory cells, a plurality of word lines, and a plurality of bit lines. The memory device further includes an internal data output line for outputting data read from the bit lines of the memory array, and a page buffer operatively connected between a bit line of the memory cell array and the internal data output line. The page buffer includes a sense node which is selectively connected to the bit line, a latch circuit having a latch node which is selectively connected to the sense node, a latch input path which sets a logic voltage of the latch node in the programming mode and the read mode, and a latch output path which is separate from the latch input path.
    • 非易失性存储器件包括存储单元阵列,其包括多个非易失性存储器单元,多个字线和多个位线。 存储器件还包括用于输出从存储器阵列的位线读取的数据的内部数据输出线以及可操作地连接在存储单元阵列的位线和内部数据输出线之间的页缓冲器。 页面缓冲器包括选择性地连接到位线的感测节点,具有选择性地连接到感测节点的锁存节点的锁存电路,将锁存节点的逻辑电压设置为编程模式的锁存器输入路径,以及 读取模式和与锁存器输入路径分离的锁存器输出路径。
    • 9. 发明授权
    • Apparatus and method for performing attenuation function in cable broadcast receiver
    • 在有线广播接收机中执行衰减功能的装置和方法
    • US08238857B2
    • 2012-08-07
    • US12645808
    • 2009-12-23
    • Sang-Yeon MoonGeun-Sik YunDong-Uk SeoSung-Soo LeeHyun-Jun Kim
    • Sang-Yeon MoonGeun-Sik YunDong-Uk SeoSung-Soo LeeHyun-Jun Kim
    • H04B17/02
    • H03G3/3052
    • An apparatus and a method for performing an attenuation function on a signal using an attenuator in a cable broadcast receiver having a Low Noise Amplifier (LNA) that does not perform an attenuation function on a signal are provided. In the method, an input Radio Frequency (RF) signal is tuned, The RF signal is converted into an Intermediate Frequency (IF) signal. An intensity of the converted IF signal is compared to a threshold, and an RF Automatic Gain Control (AGC) value is generated based on a result of the comparison. When the generated RF AGC value is smaller than an RF AGC threshold, the attenuator is turned on to attenuate the input RF signal by a predefined amount. Therefore, a high SNR, such as in an analog-digital composite signal, may be obtained without using an LNA that performs an attenuation function on a signal.
    • 提供一种用于在具有不对信号执行衰减功能的低噪声放大器(LNA)的有线广播接收机中使用衰减器对信号执行衰减功能的装置和方法。 在该方法中,调谐输入射频(RF)信号,将RF信号转换成中频(IF)信号。 将转换的IF信号的强度与阈值进行比较,并且基于比较的结果生成RF自动增益控制(AGC)值。 当所生成的RF AGC值小于RF AGC阈值时,衰减器导通,以将输入RF信号衰减预定量。 因此,可以在不使用对信号执行衰减功能的LNA的情况下获得诸如模拟数字复合信号中的高SNR。